210T2S
Abstract: No abstract text available
Text: GU PhotoMOS AQS210TS, 210T2S TESTING GU PhotoMOS (AQS210TS, 210T2S) 3-channel (MOSFET & 2 optocoupler) or (2 MOSFET & optocoupler) SOP 16-pin type. 2 MOSFET Relay and 1 optocoupler type 10.37 .408 4.4 .173 2.1 .083 1 MOSFET Relay and 2 optocouplers type
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AQS210TS,
210T2S)
16-pin
083inch
AQS210TS)
AQS210T2S)
210T2S
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AN002
Abstract: "curve tracer" ZERO VOLTAGE SWITCH
Text: SYNC POWER CORP. Technical Review of N-Channel MOSFET Measurement 576 Curve Tracer Testing Report April 2005 Ver.1 MOSFET Products AN002 1 Measuring N-Channel MOSFET Characteristics Table of Contents Page 1. General Information. 3
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AN002
AN002
"curve tracer"
ZERO VOLTAGE SWITCH
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power BJT PNP
Abstract: BJT pnp 45V vertical mosfet
Text: SYNC POWER CORP. Technical Review of P-Channel MOSFET Measurement 576 Curve Tracer Testing Report April 2005 Ver.1 MOSFET Products AN001 1 Measuring P-Channel MOSFET Characteristics Table of Contents Page 1. General Information. 3
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AN001
power BJT PNP
BJT pnp 45V
vertical mosfet
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rf power mosfet
Abstract: mosfet class ab rf IXZ215N12L "RF MOSFET" 300W 200W vhf 300w mosfet
Text: IXZ215N12L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOS TM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C, Broadcast & Communications Applications PRELIMINARY Symbol Test Conditions Maximum Ratings
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IXZ215N12L
175MHz
rf power mosfet
mosfet class ab rf
IXZ215N12L
"RF MOSFET" 300W
200W vhf
300w mosfet
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Untitled
Abstract: No abstract text available
Text: EM6M1 Transistors 2.5V Drive Nch+Pch MOSFET EM6M1 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm EMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in EMT6 package. 2) High-speed switching. 3) Low voltage drive (2.5V drive).
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EM6M1
Abstract: MOSFET IGSS 100A
Text: EM6M1 Transistors 2.5V Drive Nch+Pch MOSFET EM6M1 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm EMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in EMT6 package. 2) High-speed switching. 3) Low voltage drive (2.5V drive).
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IXZ316N60
Abstract: mosfet 50V
Text: IXZ316N60 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V
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IXZ316N60
IXZ316N60
dsIXZ316N60
mosfet 50V
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IXZ308N120
Abstract: ixzh ixzh08n120
Text: IXZH08N120 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200
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IXZH08N120
IXZ308N120
dsIXZH08N120
ixzh
ixzh08n120
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ixzr08n120a
Abstract: No abstract text available
Text: IXZR08N120 & IXZR08N120A/B Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications VDSS = 1200 V ID25 = 8.0 A Symbol Test Conditions RDS on
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IXZR08N120
IXZR08N120A/B
dsIXZR08N120A/B
ixzr08n120a
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IXZ318N50
Abstract: No abstract text available
Text: IXZ318N50 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V
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IXZ318N50
IXZ318N50
dsIXZ318N50
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"RF MOSFETs"
Abstract: 1 RF s 640 a 931 "RF MOSFET" transistor tl 187 IXZ308N120 ixzr08n120a IXYS RF IXZR08N120 5-486 731 MOSFET
Text: IXZR08N120 & IXZR08N120A/B Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
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IXZR08N120
IXZR08N120A/B
IXZ308N120
dsIXZR08N120
"RF MOSFETs"
1 RF s 640 a 931
"RF MOSFET"
transistor tl 187
ixzr08n120a
IXYS RF
IXZR08N120
5-486
731 MOSFET
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ixzr18n50
Abstract: No abstract text available
Text: IXZR18N50 & IXZR18N50A/B Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications VDSS = 500 V ID25 = 19 A Symbol Test Conditions RDS on
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IXZR18N50
IXZR18N50A/B
dsIXZR18N50
ixzr18n50
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Relay Matsua 12 volt
Abstract: No abstract text available
Text: AQS210TS, 210T2S TESTING GU General Use Type SOP Series Multi-function (1a,2a MOSFET & optocoupler) 16 Pin Type 2 MOSFET Relay and 1 optocoupler type 10.37 .408 4.4 .173 2.1 .083 1 MOSFET Relay and 2 optocouplers type 10.37 .408 4.4 .173 2.1 .083 mm inch
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AQS210TS,
210T2S
16-Pin
083inch
AQS210TS)
AQS210T2S)
AQS210TS
Relay Matsua 12 volt
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AQS210T2S
Abstract: AQS210T2SX AQS210T2SZ AQS210TS AQS210TSX AQS210TSZ
Text: AQS210TS, 210T2S TESTING GU General Use Type SOP Series Multi-function (1a,2a MOSFET & optocoupler) 16 Pin Type 2 MOSFET Relay and 1 optocoupler type 10.37 .408 4.4 .173 2.1 .083 1 MOSFET Relay and 2 optocouplers type 10.37 .408 4.4 .173 2.1 .083 mm inch
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AQS210TS,
210T2S
16-Pin
AQS210TS
AQS210TS)
AQS210T2S)
AQS210T2S
AQS210T2S
AQS210T2SX
AQS210T2SZ
AQS210TS
AQS210TSX
AQS210TSZ
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IXZ318N50
Abstract: No abstract text available
Text: IXZ318N50 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications VDSS = 500 V ID25 = 19 A Symbol Test Conditions RDS on ≤ 0.34 Ω VDSS
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IXZ318N50
dsIXZ318N50
IXZ318N50
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Untitled
Abstract: No abstract text available
Text: Si4837DY Vishay Siliconix P-Channel 30-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) - 30 rDS(on) (W) D TrenchFETr Power MOSFET D LITTLE FOOT Plust Schottky D 100% Rg Tested ID (A) 0.020 @ VGS = - 10 V 8.3 0.030 @ VGS = - 4.5 V
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Si4837DY
Si4837DY-T1
S-31726--Rev.
18-Aug-03
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Si4837DY
Abstract: Si4837DY-T1
Text: Si4837DY Vishay Siliconix P-Channel 30-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) - 30 rDS(on) (W) D TrenchFETr Power MOSFET D LITTLE FOOTr Plus Schottky D 100% Rg Tested ID (A) 0.020 @ VGS = - 10 V 8.3 0.030 @ VGS = - 4.5 V
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Si4837DY
Si4837DY-T1
18-Jul-08
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AQS210T2S
Abstract: AQS210T2SX AQS210T2SZ AQS210TS AQS210TSX AQS210TSZ
Text: AQS210TS, 210T2S TESTING GU General Use Type SOP Series Multi-function (1a,2a MOSFET & optocoupler) 16 Pin Type 2 MOSFET Relay and 1 optocoupler type 10.37 .408 4.4 .173 2.1 .083 1 MOSFET Relay and 2 optocouplers type 10.37 .408 4.4 .173 2.1 .083 mm inch
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AQS210TS,
210T2S
16-Pin
AQS210TS)
AQS210T2S)
AQS210T2S
AQS210T2S
AQS210T2SX
AQS210T2SZ
AQS210TS
AQS210TSX
AQS210TSZ
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10BQ040
Abstract: EIA-541 IRF7807V MS-012AA
Text: PD-94018A IRF7807V • • • • HEXFET Power MOSFET N Channel Application Specific MOSFET Ideal for Mobile DC-DC Converters Low Conduction Losses Low Switching Losses 100% RG Tested Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented
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PD-94018A
IRF7807V
IRF7807V
EIA-481
EIA-541.
10BQ040
EIA-541
MS-012AA
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AQS210T2S
Abstract: AQS210T2SX AQS210T2SZ AQS210TS AQS210TSX AQS210TSZ
Text: AQS210TS, 210T2S TESTING GU General Use Type SOP Series Multi-function (1a,2a MOSFET & optocoupler) 16 Pin Type 2 MOSFET Relay and 1 optocoupler type 10.37 .408 4.4 .173 2.1 .083 1 MOSFET Relay and 2 optocouplers type 10.37 .408 4.4 .173 2.1 .083 mm inch
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AQS210TS,
210T2S
16-Pin
083inch
AQS210TS)
AQS210T2S)
AQS210T2S
AQS210T2S
AQS210T2SX
AQS210T2SZ
AQS210TS
AQS210TSX
AQS210TSZ
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Si4837DY
Abstract: Si4837DY-T1
Text: Si4837DY Vishay Siliconix P-Channel 30-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) - 30 rDS(on) (W) D TrenchFETr Power MOSFET D LITTLE FOOTr Plus Schottky D 100% Rg Tested ID (A) 0.020 @ VGS = - 10 V 8.3 0.030 @ VGS = - 4.5 V
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Si4837DY
Si4837DY-T1
S-31726--Rev.
18-Aug-03
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IXZ211N50
Abstract: IXZ2211N50 DSAE0059430
Text: IXZ2211N50 Z-MOS RF Power MOSFET Dual N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications Symbol Test Conditions Maximum Ratings Per Device VDSS TJ = 25°C to 150°C
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IXZ2211N50
IXZ211N50
dsIXZ2211N50
IXZ2211N50
DSAE0059430
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FDD8N50NZ
Abstract: FDD8N50 FDD8N50NZTM
Text: FDD8N50NZ N-Channel UniFETTM II MOSFET 500 V, 6.5 A, 850 m Features Description UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and
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FDD8N50NZ
FDD8N50NZ
FDD8N50
FDD8N50NZTM
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p channel depletion mosfet
Abstract: n CHANNEL DEPLETION ENHANCEMENT MOSFET 4G14 4SR44 HMA20 PX28 SK17 p channel enhancement MOSFET specifications of MOSFET
Text: \? O S Ci MOSFET Analyser 7 f Model: HMA20 ^ /•# is. The HMA20 is an advanced Microcontrolled instrument that will quickly and easily analyse almost any enhancement mode MOSFET. With a press of the button, the Analyser will: • Verify the MOSFET under test is working.
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OCR Scan
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HMA20
HMA20
HMA20.
80x56x25mm
p channel depletion mosfet
n CHANNEL DEPLETION ENHANCEMENT MOSFET
4G14
4SR44
PX28
SK17
p channel enhancement MOSFET
specifications of MOSFET
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