FDD8N50NZTM
Abstract: No abstract text available
Text: FDD8N50NZ N-Channel UniFETTM II MOSFET 500 V, 6.5 A, 850 mΩ Features Description • RDS on = 770 mΩ (Typ.) @ VGS = 10 V, ID = 3.25 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest
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FDD8N50NZ
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FDD8N50
Abstract: No abstract text available
Text: UniFET-II FDD8N50NZ N-Channel MOSFET 500V, 6.5A, 0.85Ω Features Description • RDS on = 0.77Ω ( Typ.) @ VGS = 10V, ID = 3.25A • Low Gate Charge ( Typ. 14nC) This N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS
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FDD8N50NZ
FDD8N50NZ
FDD8N50
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FDD8N50
Abstract: FDD8N50NZ
Text: UniFET-II FDD8N50NZ N-Channel MOSFET 500V, 6.5A, 0.85Ω Features Description • RDS on = 0.77Ω ( Typ.) @ VGS = 10V, ID = 3.25A This N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS
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FDD8N50NZ
FDD8N50
FDD8N50NZ
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FDD8N50NZ
Abstract: FDD8N50 FDD8N50NZTM
Text: FDD8N50NZ N-Channel UniFETTM II MOSFET 500 V, 6.5 A, 850 m Features Description UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and
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FDD8N50NZ
FDD8N50NZ
FDD8N50
FDD8N50NZTM
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