9n90c
Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W
|
Original
|
PDF
|
2N7000
2N7000A
2N7000K
70Max
45Max
55Max
80Max
9n90c
9n50c
IGBT 20N50
kmb*050n60p
7N65C
5n50c
smd diode S4 58a
2N60C
2N60 MOSFET SMPS
str TV SMPS
|
rf power mosfet
Abstract: mosfet class ab rf IXZ215N12L "RF MOSFET" 300W 200W vhf 300w mosfet
Text: IXZ215N12L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOS TM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C, Broadcast & Communications Applications PRELIMINARY Symbol Test Conditions Maximum Ratings
|
Original
|
PDF
|
IXZ215N12L
175MHz
rf power mosfet
mosfet class ab rf
IXZ215N12L
"RF MOSFET" 300W
200W vhf
300w mosfet
|
Untitled
Abstract: No abstract text available
Text: US6M2 Transistors 2.5V Drive Nch+Pch MOSFET US6M2 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm 0.2Max. TUMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) High-speed switching, low On-resistance.
|
Original
|
PDF
|
|
20V P-Channel Power MOSFET
Abstract: US6M2
Text: US6M2 Transistors 2.5V Drive Nch+Pch MOSFET US6M2 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm 0.2Max. TUMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) High-speed switching, low On-resistance.
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: 1.5V Drive Nch+Pch MOSFET US6M11 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm 0.2Max. TUMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) Low on-resistance. 3) Low voltage drive (1.5V drive).
|
Original
|
PDF
|
US6M11
R0039A
|
Untitled
Abstract: No abstract text available
Text: 1.5V Drive Nch+Pch MOSFET US6M11 zDimensions Unit : mm zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET 0.2Max. TUMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) Low on-resistance. 3) Low voltage drive (1.5V drive).
|
Original
|
PDF
|
US6M11
R0039A
|
Untitled
Abstract: No abstract text available
Text: EM6M1 Transistors 2.5V Drive Nch+Pch MOSFET EM6M1 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm EMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in EMT6 package. 2) High-speed switching. 3) Low voltage drive (2.5V drive).
|
Original
|
PDF
|
|
smd diode 46A
Abstract: equivalent smd mosfet IRF7205 IC MOSFET QG KRF7205 ld smd transistor smd mosfet
Text: MOSFET IC SMD Type HEXFET Power MOSFET KRF7205 IRF7205 Features Adavanced Process Technology Ultra Low On-Resistance P-Channel MOSFET Surface Mount Dynamic dv/dt Rating Fast Switching Absolute Maximum Ratings Ta = 25 Symbol Rating Continuous Drain Current, VGS @ 10V @ TA = 25
|
Original
|
PDF
|
KRF7205
IRF7205)
smd diode 46A
equivalent smd mosfet
IRF7205
IC MOSFET QG
ld smd transistor
smd mosfet
|
QS6M4
Abstract: No abstract text available
Text: QS6M4 QS6M4 Transistors 2.5V Drive Nch+Pch MOSFET QS6M4 zDimensions Unit : mm zStructure Silicon P-channel MOSFET Silicon N-channel MOSFET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) The QS6M4 combines Pch MOSFET with a Nch MOSFET in a single TSMT6 package.
|
Original
|
PDF
|
|
EM6M1
Abstract: MOSFET IGSS 100A
Text: EM6M1 Transistors 2.5V Drive Nch+Pch MOSFET EM6M1 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm EMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in EMT6 package. 2) High-speed switching. 3) Low voltage drive (2.5V drive).
|
Original
|
PDF
|
|
6V unipolar STEPPER MOTOR
Abstract: Brushless DC Motors motor driver full bridge mosfet "DC Motors" 8906 MICROSTEP 7029 Brushless 3 Phase Motor Driver BACK-EMF motor full bridge driver "Brushless DC Motors"
Text: AMS-173-7 Product Selection Guide MOTOR DRIVERS Output Ratings* Part Number† INTEGRATED CIRCUITS FOR BRUSHLESS DC MOTORS 3-Phase Power MOSFET Controller — 28 V 3933 3-Phase Power MOSFET Controller — 50 V 3932 3-Phase Power MOSFET Controller — 50 V
|
Original
|
PDF
|
AMS-173-7
6V unipolar STEPPER MOTOR
Brushless DC Motors
motor driver full bridge mosfet
"DC Motors"
8906
MICROSTEP
7029
Brushless 3 Phase Motor Driver BACK-EMF
motor full bridge driver
"Brushless DC Motors"
|
steppermotor
Abstract: stepper-motor Brushless DC Motors "Brushless DC Motors" use motor driver BIPOLAR MICROSTEPPING DRIVER motor mosfet unipolar stepper motor Temperature Sensors PWM output 3-phase microstepping
Text: AMS-173-7 Product Selection Guide MOTOR DRIVERS Output Ratings* Part Number† INTEGRATED CIRCUITS FOR BRUSHLESS DC MOTORS 3-Phase Power MOSFET Controller — 28 V 3933 3-Phase Power MOSFET Controller — 40 V 3935 3-Phase Power MOSFET Controller — 50 V
|
Original
|
PDF
|
AMS-173-7
steppermotor
stepper-motor
Brushless DC Motors
"Brushless DC Motors"
use motor driver
BIPOLAR MICROSTEPPING DRIVER
motor mosfet
unipolar stepper motor
Temperature Sensors PWM output
3-phase microstepping
|
IXZ316N60
Abstract: mosfet 50V
Text: IXZ316N60 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V
|
Original
|
PDF
|
IXZ316N60
IXZ316N60
dsIXZ316N60
mosfet 50V
|
Untitled
Abstract: No abstract text available
Text: SiC 650V N-CHANNEL 4 MOSFET - S SML25SCM650N2A • SiC MOSFET MOSFET In A Hermetic SMD1 Package • Silver Sintered die attached for improved thermal performance • Designed for High Temperature Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated
|
Original
|
PDF
|
SML25SCM650N2A
O276AB)
SML10529
|
|
|
IXZ318N50
Abstract: No abstract text available
Text: IXZ318N50 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V
|
Original
|
PDF
|
IXZ318N50
IXZ318N50
dsIXZ318N50
|
IC MOSFET QG
Abstract: mosfet with schottky body diode mosfet Vds 30 Vgs 25 1A smd mosfet 10V Schottky Diode 78 DIODE SMD MOSFET QG
Text: IC IC SMD Type N-Channel 30-V D-S , Reduced Qg Fast Switching MOSFET with Schottky Diode KI4300DY Features TrenchFET Power MOSFET LITTLE FOOT PlusTM Integrated Schottky PWM Optimized Absolute Maximum Ratings Ta = 25 Parameter Symbol 10 secs Steady State Drain-Source Voltage (MOSFET)
|
Original
|
PDF
|
KI4300DY
IC MOSFET QG
mosfet with schottky body diode
mosfet Vds 30 Vgs 25
1A smd mosfet
10V Schottky Diode
78 DIODE SMD
MOSFET QG
|
"RF MOSFETs"
Abstract: 1 RF s 640 a 931 "RF MOSFET" transistor tl 187 IXZ308N120 ixzr08n120a IXYS RF IXZR08N120 5-486 731 MOSFET
Text: IXZR08N120 & IXZR08N120A/B Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
|
Original
|
PDF
|
IXZR08N120
IXZR08N120A/B
IXZ308N120
dsIXZR08N120
"RF MOSFETs"
1 RF s 640 a 931
"RF MOSFET"
transistor tl 187
ixzr08n120a
IXYS RF
IXZR08N120
5-486
731 MOSFET
|
Untitled
Abstract: No abstract text available
Text: SiC 650V N-CHANNEL 4 MOSFET - S SML25SCM650N2A • SiC MOSFET MOSFET In A Hermetic SMD1 Package • Silver Sintered die attached for improved thermal performance • Designed for High Temperature Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated
|
Original
|
PDF
|
SML25SCM650N2A
SMD05
O-276AA)
SML10529
|
Untitled
Abstract: No abstract text available
Text: 1.2V Drive Nch+Pch MOSFET EM6M2 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm EMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in EMT6 package. 2) High-speed switching. 3) Low voltage drive (1.2V drive). 4) Built-in G-S Protection Diode.
|
Original
|
PDF
|
R0039A
|
"SOT-227 B" dimensions
Abstract: 75N60 sot-227
Text: Advanced Technical Information CoolMOS Power MOSFET IXKN 75N60C VDSS ID25 RDS on 600 V 75 A Ω 35 mΩ N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET miniBLOC, SOT-227 B E72873 MOSFET Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings S
|
Original
|
PDF
|
75N60C
OT-227
E72873
"SOT-227 B" dimensions
75N60
sot-227
|
Untitled
Abstract: No abstract text available
Text: Advanced Technical Information CoolMOS Power MOSFET IXKN 40N60C VDSS ID25 RDS on 600 V 40 A Ω 70 mΩ N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET miniBLOC, SOT-227 B E72873 MOSFET Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings S
|
Original
|
PDF
|
40N60C
OT-227
E72873
|
Untitled
Abstract: No abstract text available
Text: 1.2V Drive Nch+Pch MOSFET EM6M2 Structure Silicon N-channel MOSFET / Silicon P-channel MOSFET Dimensions Unit : mm EMT6 Features 1) Nch MOSFET and Pch MOSFET are put in EMT6 package. 2) High-speed switching. 3) Low voltage drive (1.2V drive). 4) Built-in G-S Protection Diode.
|
Original
|
PDF
|
R0039A
|
SOT-227 Package
Abstract: E72873 SOT-227 heatsink
Text: Advanced Technical Information CoolMOS Power MOSFET IXKN 45N80C VDSS ID25 RDS on 800 V 44 A Ω 74 mΩ N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET miniBLOC, SOT-227 B E72873 MOSFET Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings S
|
Original
|
PDF
|
45N80C
OT-227
E72873
SOT-227 Package
E72873
SOT-227 heatsink
|
IXZ211N50
Abstract: IXZ2211N50 DSAE0059430
Text: IXZ2211N50 Z-MOS RF Power MOSFET Dual N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications Symbol Test Conditions Maximum Ratings Per Device VDSS TJ = 25°C to 150°C
|
Original
|
PDF
|
IXZ2211N50
IXZ211N50
dsIXZ2211N50
IXZ2211N50
DSAE0059430
|
