rectifier diode for max 1.5A
Abstract: 433B IRFF430 JANTX2N6802 JANTXV2N6802 9433B
Text: Provisional Data Sheet No. PD-9.433B HEXFET JANTX2N6802 POWER MOSFET JANTXV2N6802 [REF:MIL-PRF-19500/557] [GENERIC:IRFF430] N-CHANNEL Ω HEXFET 500 Volt, 1.5Ω Product Summary HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low onstate resistance combined with high transconductance.
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JANTX2N6802
JANTXV2N6802
MIL-PRF-19500/557]
IRFF430]
rectifier diode for max 1.5A
433B
IRFF430
JANTX2N6802
JANTXV2N6802
9433B
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mosfet 4n60
Abstract: 4n60a 4N60R IXTP4N60 IXTM4N60 4n60
Text: I X Y S CORP 1ÖE D • 4bêb22b OOOObll 5 U □IXYS 1XTP4N60, IXTM4N60 4 AM PS, 600 V, 2.1S2/2.4Q MAXIMUM RATINGS _ I IXTP4N60 IXTM4N60 600 600 ±20 ±30 4 16 75 0.6 -6 5 to +150 300 (1.6mm from case for 10 sec. Sym. Parameter Drain-Source Voltage (1) Drain-Gate Voltage (RGS=1.Q MQ) (1)
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IXTP4N60,
IXTM4N60
IXTP4N60
IXTM4N60
specifi420
O-204
O-220
O-247
mosfet 4n60
4n60a
4N60R
4n60
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2sk1058 equivalent
Abstract: MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297
Text: JfHITACHI POWER TRANSISTORS 1 Contents Page 1. discrete and module devices New Degree of Freedom Hitachi's Power Transistors cover all field applications ranging from low to high frequ encies, also su itab le for fullautomated assembly processes such as surface-mount devices eg. UPAK, MPAK,
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O220F
SP-10
SP-12
SP-12TA
1560D
2sk1058 equivalent
MBM300BS6
Hitachi MOSFET
2SK1270
transistor 2sk 12
2sk1645
2SK975 equivalent
equivalent transistor 2sk
2SK1058 MOSFET APPLICATION NOTES
2SC297
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35N25
Abstract: ixtm35n30 35N30 800v mosfet megamos 46 08 09 6 IXTH35N25
Text: I X Y S CORP ID E D I 4t.fl b25L. ÜDDOBbO QDOGBtiO b 4t.flt.S5t b | DIXYS MegaMOS'“ FETs IXTH35N30, 25 IXTM35N30, 25 MAXIMUM RATINGS Parameter Sym. Drain-Source Voltage 1 Vdss Vdgr Drain-Gate Voltage (Rq s = 1-OMft) (1) Gate-Source Voltage Continuous
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IXTH35N25
IXTH35N30
IXTM35N25
IXTM35N30
35N25
35N30
800v mosfet
megamos 46 08 09 6
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IXGH30N50A
Abstract: IXGH20N50A IXGP10N50A IXGH20N50 IXGH25N80A ixgh40n60 IXGP10N60A Amp. mosfet 1000 watt IXGH25N90A IXGM30N60
Text: IXYS' MOSIGBT combines the best characteristics ofPower MOSFET and bipolar devices on a single mono lithic chip.The MOS gated input allows the MOSIGBT to be voltage driven like a MOSFET The complexity and cost of the drive circuitiy is greatly reduced. Since the MOSIGBT uses
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4bflb55b
IXGH30N50A
IXGH20N50A
IXGP10N50A
IXGH20N50
IXGH25N80A
ixgh40n60
IXGP10N60A
Amp. mosfet 1000 watt
IXGH25N90A
IXGM30N60
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42N15
Abstract: 079A 42N20
Text: I X Y S CORP 10E D I D00D3b4 3 I /_ V -3 Ÿ -/S - □IXYS MegaMOS FETs IXTH42N20, 15 IXTM42N20, 15 MAXIMUM RATINGS Parameter Sym. Drain-Source Voltage 1 Vd Drain-Gate Voltage (Rq s = 1.0MÎ1) (1) Vqqr Gate-Source Voltage Continuous
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D00D3b4
IXTH42N20,
IXTM42N20,
IXTH42N15
IXTM42N15
IXTH42N20
IXTM42N20
O-204
O-247
50-200V,
42N15
079A
42N20
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17N55
Abstract: MOSFET 17N60 17N60 IXTM17N55 IXTH17N60
Text: IDE I X Y S CORP D I 4t>ôt>22t, 0 0 00 3M b I r - 5 ? - / r MegaMOS'“ FETs n ix Y S IXTH17N60, 55 IXTM17N60, 55 MAXIMUM RATINGS Sym. IXTH17N55 IXTM17N55 IXTH17N60 IXTM17N60 Unit Drain-Source Voltage 1 Vdss 550 600 Vdc Drain-Gate Voltage (Rg s = 1-OMfl) (1)
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IXTH17N55
IXTM17N55
IXTH17N60
IXTM17N60
O-204
O-247
IXTH17N60,
IXTM17N60,
17N55
MOSFET 17N60
17N60
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19n50
Abstract: megamos 48 a 1712 mosfet lhi 778 megamos N-channel MOSFET 800v to-247 IXTM19N50 LHi 978 megamos 13 H100
Text: I X Y S CORP 10E ° 4Liflt.2ab 000035b M 1 I - 3 7 '/ S MegaMOS FETs D IX Y S IXTH19N50, 45 IXTM19N50, 45 M AXIM UM RATINGS Parameter Sym. IXTH19N45 IXTM19N45 IXTH19N50 IXTM19N50 Unit Drain-Source Voltage 1 Vd s s 450 500 Vdc Vdgr 450 500 Vdc Drain-Gate Voltage (Rq s - 1-OMft) (1)
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IXTH19N45
IXTH19N50
IXTM19N45
IXTM19N50
000035b
19n50
megamos 48
a 1712 mosfet
lhi 778
megamos
N-channel MOSFET 800v to-247
LHi 978
megamos 13
H100
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21N60
Abstract: a 1712 mosfet s300h 21N55 247 AA
Text: I X Y S C0RP IDE ° 1 MbflbSatj 00D0342 □ IX Y S I IXTH21N60, 55 IXTM21N60, 55 Parameter Sym. IXTH21N55 IXTM21N55 IXTH21N60 IXTM21N60 Unit Drain-Source Voltage 1 Vdss 550 600 Vdc Drain-Gate Voltage (Rqs = 1.0Mfl) (1) Vdgr 550 600 Vdc Gate-Source Voltage Continuous
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00D0342
IXTH21N60,
IXTM21N60,
IXTH21N55
IXTM21N55
IXTH21N60
IXTM21N60
O-204
O-247
21N60
a 1712 mosfet
s300h
21N55
247 AA
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IXTH26N50
Abstract: IXTH26N45 ixtm26n50 TL 1074 CT
Text: I X Y S IDE CORP 1 ° Mbflb52b 000D350 3 I -' □ IX Y S MegaNIOS FETs IXTH26N50, 45 IXTM26N50, 45 MAXIMUM RATINGS Parameter Sym. IXTH26N45 IXTM26N45 IXTH26N50 IXTM26N50 Unit Drain-Source Voltage 1 Vdss 450 500 Vdc V dgr 450
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IXTH26N45
IXTH26N50
IXTM26N45
IXTM26N50
Mbflb22b
IXTH26N50,
00ESN0TINCLUOE
TL 1074 CT
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a 1712 mosfet
Abstract: ixth67n10 ID 48 Megamos K 1120 megamos 46 08 09 6
Text: IDE D I X Y S CORP DIXYS MegaMOS FETs IXTH67N10, 08 IXTM67N10, 08 MAXIMUM RATINGS Sym. IXTH67N08 IXTM67N08 IXTH67N10 IXTM67N10 Unit Drain-Source Voltage 1 V d SS 80 100 Vdc Drain-Gate Voltage (RGs = 1.0MQ) (1) VDGR 80 100 Vdc Parameter Gate-Source Voltage Continuous
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IXTH67N08
IXTH67N10
IXTM67N08
IXTM67N10
IXTH67N10,
a 1712 mosfet
ID 48 Megamos
K 1120
megamos 46 08 09 6
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3n80a
Abstract: IXTM3N90
Text: I X Y S CORP lflE D • 4bflb52b OOOQbOô 5 IXTP3N80, IXTP3N90, IXTM3N80, IXTM3N90 □IXYS \I ”T ” MAXIMUM RATINGS Parameter Sym. Drain-Source Voltage 1 Drain-Gate Voltage (RGS=1.0 MS3) (1) Gate-Source Voltage Continuous Voss Vdgr Vgs Vgsm Id Idm Po
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4bflb52b
IXTP3N80,
IXTP3N90,
IXTM3N80,
IXTM3N90
IXTP3N80
IXTM3N80
IXTP3N90
IXTM3N90
ELECTRIC420
3n80a
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4N95
Abstract: 4n100 mosfet IXTP4N100 ixtm4N100 ixtm4n95
Text: I X Y S CÔRP □ I X Y läE D • 4bôba2b OQOGbOH Ö IXTP4N95, IXTP4N100, IXTM4N95, IXTM4N100 S 4 AMPS, 950-1000 V, 3.3Q/4.0Q MAXIMUM RATINGS Sym. Parameter Drain-Source Voltage 1 Drain-Gate Voltage (RQS=1.0 MQ) (1) Gate-Source Voltage Continuous Gate-Source Voltage Transient
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IXTP4N95,
IXTP4N100,
IXTM4N95,
IXTM4N100
IXTP4N95
IXTM4N95
IXTP4N100
EL420
O-204
4N95
4n100 mosfet
ixtm4n95
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15N60
Abstract: IXTM15N60
Text: I X Y S IDE CORP D I 4bflb22b D00034Ö /S' □IX Y S MegaMOS'" FETs IXTH15N60, 55 IXTM15N60, 55 M A X IM U M R ATIN G S Sym. IXTH15N55 IXTM15N55 IXTH15N60 IXTM15N60 U nit Drain-Source Voltage 1 Vdss 550 600 Vdc Drain-Gate Voltage (R q s = 1.0MÜ) (1) Vd g r
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4bflb22b
D00034Ö
IXTH15N60,
IXTM15N60,
IXTH15N55
IXTM15N55
IXTH15N60
IXTM15N60
50-600V,
O-247
15N60
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6n60a
Abstract: IXTM6N60 6n60 600 volt n channel power mosfet
Text: I X Y S CO RP löE D • 4L,abS2b O Q O D b l O 3 ■ IXTP6N60, IXTM6N60 □ IX Y S 6 AMPS, 600 V, 1.2S/1.5Q MAXIMUM RATINGS Parameter IXTP6N60 IXTM6N60 Sym. Drain-Source Voltage 1 Drain-Gale Voltage (RGS=1.0 MQ) (1) Gate-Source Voltage Continuous Gate-Source Voltage Transient
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IXTP6N60
IXTM6N60
IXTP6N60,
Drain-Sour420
O-204
O-220
O-247
6n60a
6n60
600 volt n channel power mosfet
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75n08
Abstract: megamos 46 08 09 6 TL 1074 CT Mosfet K 135 To3 p 75n08 k 1120 P-Channel MOSFET 800v f g megamos
Text: I X Y S IDE CORP D I 4böbS?b D OOG a b b T □IXYS I 't f - l Ç MegaMOS FETs IXTH75N10, 08 IXTM75N10, 08 MAXIMUM RATINGS Sym. IXTH75N08 IXTM75N08 IXTH75N10 IXTM75N10 Unit Drain-Source Voltage 1 Vd s s 80 100 Vdc Drain-Gate Voltage (Rq s = 1-OMfl) (1)
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IXTH75N08
IXTH75N10
IXTM75N08
IXTM75N10
IXTH75N10,
IXTM75N10,
0-100V,
O-247
75n08
megamos 46 08 09 6
TL 1074 CT
Mosfet K 135 To3
p 75n08
k 1120
P-Channel MOSFET 800v
f g megamos
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ID 48 Megamos
Abstract: 35N25 IXTM35N25 ixtm35n30
Text: I X Y S CORP IDE D I 4t . fl b25 L. ÜDDOBbO QDOGBtiO b | 4t.flt.S5t DIXYS MegaMOS'“ FETs IXTH35N30, 25 IXTM35N30, 25 MAXIMUM RATINGS Parameter Sym. Drain-Source Voltage 1 Vdss Vdgr Drain-Gate Voltage (Rq s = 1-OMft) (1) Gate-Source Voltage Continuous
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IXTH35N25
IXTM35N25
IXTH35N30
IXTM35N30
O-204
O-247
IXTH350
ID 48 Megamos
35N25
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40N25
Abstract: IXTH40N25 f g megamos SM 226 6V megamos 46 08 09 6 megamos IXTH40N30 1712 mosfet LD 5161
Text: I X Y S CORP ID E I D 4 L f l b 5 ab DD0 0 3 SÖ fl | □IXYS ' IXTH40N30, 25 IXTM40N30, 25 MAXIMUM RATINGS Parameter Sym. IXTH40N25 IXTM40N25 IXTH40N30 IXTM40N30 Unit Drain-Source Voltage 1 Voss 250 300 Mac Drain-Gate Voltage (Rqs = 1-OMii) (1) Vq 250 300
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IXTH40N25
IXTH40N30
IXTM40N25
IXTM40N30
40N25
f g megamos
SM 226 6V
megamos 46 08 09 6
megamos
1712 mosfet
LD 5161
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ZO 109 wa
Abstract: ixtm2N100 PN channel MOSFET 10A ixtm2N95
Text: 1ÖE I X Y S CORP D • 4böb22b QOOGLOS T ■ IXTP2N95, IXTP2N100, IXTM2N95, IXTM2N100 □ IX Y S 2 AM PS, 950-1000 V, 6.0Q/7.0Q T V £ °l-ll MAXIMUM RATINGS Parameter Sym. Drain-Source Voltage 1 Drain-Gate Voltage (RGS=1.0 MQ) (1) Gate-Source Voltage Continuous
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IXTP2N95,
IXTP2N100,
IXTM2N95,
IXTM2N100
IXTP2N95
IXTM2N95
IXTP2N100
CHA420
O-204
ZO 109 wa
PN channel MOSFET 10A
ixtm2N95
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15N50A
Abstract: IXTM15N45 15n50 IXTM15N50
Text: I X Y S CORF? □IXYS 1ÖE D • 4bäb22b QOOQblE 7 ■ IXTH15N45A, IXTH15N50A, ÏXTM15N45A, IXTM15N50A 15 AMPS, 450-500 V, 0.4Q MAXIMUM RATINGS Parameter Drain-Source Voltage 1 Drain-Gate Voltage (RGS=1.0 MQ) (1) Gate-Source Voltage Continuous Gate-Source Voltage Transient
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IXTH15N45A
IXTH15N50A
IXTM15N45A,
IXTM15N50A
IXTM15N45A
IXTH15N50A
O-204
O-220
15N50A
IXTM15N45
15n50
IXTM15N50
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IXTH12N50
Abstract: No abstract text available
Text: I X Y S CORP 1 ÔE D • 4bôb22b GOGGblB <=1 IXTH12N45, IXTH12N50, IXTM12N45, IXTM12N50 12 AMPS, 450-500 V, 0.4Q/0.5Q MAXIMUM RATINGS Parameter Sym. Drain-Source Voltage 1 Drain-Gate Voltage (RQS=1.0 MQ) (1) Gate-Source Voltage Continuous Gate-Source Voltage Transient
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IXTH12N45,
IXTH12N50,
IXTM12N45,
IXTM12N50
IXTH12N45
IXTM12N45
IXTH12N50
IXTM12N50
O-204
O-220
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IXTH10N60
Abstract: IXTM10N60
Text: CORP IflE D • 4bab22b □ IX Y S OOOObO'ï 7 ■ IXTH10N60, IXTM10N60 MAXIMUM RATINGS 10 AMPS, 600 V, 0.55Q/0.7S2 'T-201 -IS , Sym. Parameter Drain-Source Voltage 1 Drain-Qate Voltage (RGS=1.0 MQ) (1) IXTH10N60 IXTM10N60 Unit 600 600 ±20 ±30 Vd0 Vdc
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4bab22b
IXTH10N60,
IXTM10N60
55Q/0
IXTH10N60
CHARACTE420
O-204
O-220
O-247
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2SK1778
Abstract: 2SJ236 2sj177 pf0030 hitachi 2SJ299 2SK1919 2SJ175 2SJ176 2SJ182 2SJ237
Text: 12 HITACHI DIII-HF Series High Speed Devices To improve switching losses for certain critical switching applications, Hitachi has introduced HF-Series with better built-in diode breakdown capability then the existing DIII-H series using life-time control technology.
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high-sp03
2SK1665
2SJ215
2SJ217
2SK1303
2SK1304
2SK1298
2SK1666
2SJ216
2SJ218
2SK1778
2SJ236
2sj177
pf0030 hitachi
2SJ299
2SK1919
2SJ175
2SJ176
2SJ182
2SJ237
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5N95A
Abstract: N-channel MOSFET to-247 50a P-CHANNEL 25A TO-247 POWER MOSFET ixth5n95
Text: I X Y S □ I X Y CORP 1 ÖE D • 4t.0bE2b D00Gb03 b ■ IX T H 5 N 9 5 , IX T H 5 N 1 0 0 , IX T M 5 N 9 5 , IX T M 5 N 1 0 0 5 A M P S , 9 5 0-1000 V, 2.0Q /2.4Q S MAXIMUM RATINGS Parameter Sym. IXTH5N95 IXTMSN9S IXTH5N100 IXTM5N100 Drain-Source Voltage 1
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D00Gb03
IXTH5N95,
IXTH5N100,
IXTM5N95,
IXTM5N100
IXTH5N95
IXTH5N100
O-204
O-220
5N95A
N-channel MOSFET to-247 50a
P-CHANNEL 25A TO-247 POWER MOSFET
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