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    IXTH26N45 Search Results

    IXTH26N45 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IXTH26N45 IXYS MegaMOS Power MOSFETs Scan PDF

    IXTH26N45 Datasheets Context Search

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    IXTH26N45

    Abstract: No abstract text available
    Text: IXTH26N45 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)450 V(BR)GSS (V)20 I(D) Max. (A)26 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)300 Minimum Operating Temp (øC)


    Original     		PDF IXTH26N45

    IXTH26N50

    Abstract: IXTH26N45 ixtm26n50 TL 1074 CT
    Text: I X Y S IDE CORP 1 ° Mbflb52b 000D350 3 I -' □ IX Y S MegaNIOS FETs IXTH26N50, 45 IXTM26N50, 45 MAXIMUM RATINGS Parameter Sym. IXTH26N45 IXTM26N45 IXTH26N50 IXTM26N50 Unit Drain-Source Voltage 1 Vdss 450 500 Vdc V dgr 450


    OCR Scan     		PDF IXTH26N45 IXTH26N50 IXTM26N45 IXTM26N50 Mbflb22b IXTH26N50, 00ESN0TINCLUOE TL 1074 CT

    megamos

    Abstract: f g megamos megamos 48 ID 48 Megamos megamos 13 IXTH40N25 IXTH12N95 IXTH12N100 IXTH26N50 IXTH11N95
    Text: I X Y S CORP The MegaMOS family of large scale monolithic Power MOSFETs provides significantly higher power handling capability than industry standard MOSFETs. With HDMOS technology, IXYS has increased its chip sizes without a major cost penalty to the user. Unlike the popular size 3 ,4


    OCR Scan     		PDF O-204 O-247 megamos f g megamos megamos 48 ID 48 Megamos megamos 13 IXTH40N25 IXTH12N95 IXTH12N100 IXTH26N50 IXTH11N95