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    Untitled

    Abstract: No abstract text available
    Text: ISOSMART IGBT Module VIE200-12S4 lc = 200 A VCES = 1200 V Intelligent Power Module IPM with integrated galvanic isolation interface High Sh ort Circuit S O A C ap ab ility 4 Driver 5 Jt Protection e 9 10 Preliminary data Isolatori Symbol Test Conditions


    OCR Scan     		PDF VIE200-12S4 4bflb22b Mbflb22b

    10N03

    Abstract: 06N03 VU050-12N03 04n03 14n03 VU050-16N03 VU050-08N03 IT5 rectifier 16N03 12n03
    Text: MbE D • 4 h ñ b 25 b 0 0 G 1 25 5 3 H I X Y I X Y S CORP 'T-Z.SiQ^ g m -< n TYYS k_J Data Sheet No. 911004A - November 1991 Three-Phase Diode Rectifier Bridge VU050 FEATURES:_ • Isolated Direct Copper Bond Base Plate


    OCR Scan     		PDF E72873M) 11004A VU050 VU050-04N03 VU050-06N03 VU050-08N03 VU050-10N03 VU050-12N03 VU050-14N03 VU050-16N03 10N03 06N03 04n03 14n03 VU050-16N03 IT5 rectifier 16N03 12n03

    MCC72-12I01

    Abstract: v06v 06io1 diode c72
    Text: 4bE D • 4bôb22b 000116Ö 3 H I X Y I X Y S CORP BIXYS "T “25-Z3 Version 1 400 600 800 1200 1400 1600 MCC72-06ÌO1 MCC72-08ÎO1 MCC72-12Ì01 MCC72-14Ì01 MCC72-16Ì01 Test conditions ImMâi Ifmhs Tvj=T vjm Tc=85°C; 180°sin Itsmi Ifsm (di/dtJc Version 8


    OCR Scan     		PDF MCC72 MCD72 D72-04io8 D72-06io8 D72-08io8 MCD72-12iofi D72-14io8 D72-16io8 MCC72-06 MCC72-08 MCC72-12I01 v06v 06io1 diode c72

    Untitled

    Abstract: No abstract text available
    Text: □IXYS IGBT Modules Half-Bridge and Chopper Configurations VII High Short Circuit SOA Capability VII 50-12S3 VID50-12S3 VDI50-12S3 •4 4 ! f 1 * : I Maximum Ratings Symbol Test Conditions V CES T0 = 25°C to 150°C 1200 V V CGR T,J = 25°C to 150°C; RrP


    OCR Scan     		PDF 50-12S3 VID50-12S3 VDI50-12S3 VID50 VDI50 VII50-12S3 000274b

    Untitled

    Abstract: No abstract text available
    Text: Standard Power MOSFET IRFP264 VDSS = 250 V ID cont = 38 A p DS(on) = 0.075 Q N-Channel Enhancement Mode Symbol Test Conditions v DSS Tj = 25°Cto150°C 250 V VDGR T.J = 25°C to 150°C; Rrt! = 1 M£2 Go 250 V Maximum Ratings vy g s Continuous * ±20 V ^G SM


    OCR Scan     		PDF IRFP264 Cto150Â O-247 Mbflb22b DDD3fl27

    ma 8630

    Abstract: MCC56-14i01 MCC56-14i01 B MCC56-16IO1 MCC56-06IO1 MCD56-04IO8 MCC56-08IO8 B
    Text: 4bE D • 4bflb22fc. 00011fl4 b B I X Y 'T Z S - i y I X Y S CORP n ix Y S Thyristor Modules Thyristor/Diode Modules Vrm VotM V VM V ra V 500 700 900 1300 1500 1700 400 600 800 1200 1400 1600 Type Version 1 Version 8 Version 6 MCC56-06IO1 MCC56-08IO1 MCC56-12I01


    OCR Scan     		PDF 4bflb22fc. 00011fl4 MCC56 MCD56 MCC56-06IO1 MCC56-08IO1 MCC56-12I01 MCC56-14 MCC56-16io1 MCC56-06 ma 8630 MCC56-14i01 MCC56-14i01 B MCD56-04IO8 MCC56-08IO8 B

    VAJI

    Abstract: TI42A
    Text: 4bûb22b Ü001Ö03 T21 IX Y lOIXYS IGBT with Diode IXSN30N100AU1 CES High Short Circuit SOA Capability CE sat = 34 A = 1000 V =4V 2 & 4 "T i Symbol Test Conditions V«s T j = 25°C to 150°C 1000 V T j = 25°C to 150°C; RGE = 1 M£2 1000 V Maximum Ratings


    OCR Scan     		PDF IXSN30N100AU1 OT-227 30jiH it140 D-68619 VAJI TI42A

    Untitled

    Abstract: No abstract text available
    Text: □IXYS IGBT Module Half-Bridge Configuration VII100-12G4 ^C DC = 100 A V CES = 1200 V V CE (sat) = 2.6 V High Short Circuit SOA Capability Symbol Test C onditions V CES Tj = 25°C to 150°C v CGR Tj = 25°C to 150°C; RGE = 1 MQ V GES v GEM Continuous Transient


    OCR Scan     		PDF VII100-12G4 Mbflb22b VII100-1264 GD027Ã

    DIN 46249 TERMINALS

    Abstract: ixgn50n100 1XGQ150N6QY3 IXGQ50N100Y4
    Text: I X Y S CORP IS E D 4ti8b25fcj O O O O S S O T ]\/[OSBLOC MODULES The MOSBLOC family of isolated modules are designed for high power industrial and commercial applica­ tions requiring improved ruggedness and efficiency. They are available with either IXYS* advanced MOSIGBTs


    OCR Scan     		PDF 4ti8b25fcj DIN 46249 TERMINALS ixgn50n100 1XGQ150N6QY3 IXGQ50N100Y4

    24N50S

    Abstract: smd JH IXFH24N50S D2528
    Text: HiPerFET Power MOSFET IXFH24N50S VDSS D25 RDS on Surface Mountable N-Channel Enhancement-Mode Avalanche Rated, High dv/dt, Low trr t rr =s500 V = 24 A = 0.23 Cl < 250 ns Preliminary data Symbol Maximum Ratings . te s t Conditions v DSS Tj = 25 Cto l7 5 bC


    OCR Scan     		PDF IXFH24N50S 175bC O-247 24N50S 24N50 D94010DE, Mbflb22b smd JH D2528

    Untitled

    Abstract: No abstract text available
    Text: • MbflbS2b GGGlbbS 307 M I X Y niXYS MCC56 ITav=2 x 60 A MCD56 VRRM=400-1800 v Thyristor Modules Thyristor/Diode Modules 500 700 900 1300 1500 1700 1900 i 1 > > > Vw V mm V 400 600 800 1200 1400 1600 1800* Type Version 1 B MCC56-06ÌO1 MCC56-08ÌO1 MCC56-12io1


    OCR Scan     		PDF MCC56 MCD56 MCC56-06à MCC56-08à MCC56-12io1 MCC56-14io1 MCC56-16k MCC56-18io1 MCC66-06io8

    Untitled

    Abstract: No abstract text available
    Text: 4bflb55b 00Glb73 Mfl3 H I X Y n ix Y S Thyristor Modules Thyristor/Diode Modules V mn V mm V Vmm Vow V 500 700 900 1300 1500 1700 1900 400 600 800 1200 1400 1600 1800* MCC95 MCD95 iTAV= 2 x 116 A VRRM= 400-1800 v Type Version 1 B MCC95-06ÌO1 MCC95~08io1 MCC95-12I01


    OCR Scan     		PDF 4bflb55b 00Glb73 MCC95 MCD95 MCC95-06Ã MCC95 08io1 MCC95-12I01 MCC95-14401 MCC95-16Ã

    Untitled

    Abstract: No abstract text available
    Text: DIXYS MDD 172 IFRMS = 2 x 300 A High Power Diode Modules FAVM = 2x190 A v RRM = 800 -1800 V v RSM V RRM V V 3 Type 1 î J J i 1 900 1300 1500 1700 1900 Symbol ^FAVM ^FSM MDD MDD MDD MDD MDD 800 1200 1400 1600 1800 Maximum Ratings Test Conditions 300 190 A


    OCR Scan     		PDF 2x190 172-08N1 172-12N1 172-14N1 172-16N1 172-18N1

    Untitled

    Abstract: No abstract text available
    Text: Li IXYS Half Controlled VHF36 Single Phase Rectifier Bridges with freewheeling Diode Type DSti V 8 1 3 2 op o p V 800 1200 1400 1600 Test Conditions •dAV» ^FRHS> ^TRM S Tk = 85‘ C, module module per leg ^FSU> ^TSH Tvj dl/dt „ (dv/dt)w 45-C; > GC


    OCR Scan     		PDF VHF36 36-12io5 36-16io5 00031Q7

    IXGH20N60U1

    Abstract: IXGH17N100AU1 SOT227B package IXSH20N60U1 *GH20N60AU1 1XYS UltraFast 5-40 kHz E1S4 TI231 IGBT 20A 600V ABB
    Text: Mb E D • MböbEEb 0000^20 7 H I X Y 'PS !-! S I X Y S CORP □IXYS PRELIMINARY TECHNICAL INFORMATION* Data Book NO.91750A October 1991 "U1" Series IGBTs IGBTs with Interna! Fast Recovery Rectifier Features High Voltage IGBT and Anti-Parallel in One Package


    OCR Scan     		PDF 1750A 30KHz T-39-15 IXGH10N60U1 IXGH10N60AU1 IXGH20N60U1 IXGH17N100AU1 SOT227B package IXSH20N60U1 *GH20N60AU1 1XYS UltraFast 5-40 kHz E1S4 TI231 IGBT 20A 600V ABB

    IXSE502PC

    Abstract: Hearing Aid ARM processor based Circuit Diagram IXSE502 DOWN COUNTER using 8051 flow chart for automatic control of three phase motor using 8051 ic circuit diagram of digital hearing aid incremental shaft encoder 8086 microcomputer quadrature shaft decoder D-6840
    Text: 4bE D • MböbEEb □□Gill? E BIIXY I X Y S CORP T ‘5 * ^ 3 ' O S □IXYS PRELIMINARY INFORMATION D atasheet No. 915502A October 1991 SHAFT ENCODER PERIPHERAL INTERFACE IXSE502 / IXSE503 Features Direct 2 channel Quadrature Inputs with Schmitt Trigger Circuitry


    OCR Scan     		PDF 15502A IXSE502 IXSE503 IXSE502PC IXSE502PI IXSE503PC IXSE503PI 24ct/1 POB1180 Hearing Aid ARM processor based Circuit Diagram DOWN COUNTER using 8051 flow chart for automatic control of three phase motor using 8051 ic circuit diagram of digital hearing aid incremental shaft encoder 8086 microcomputer quadrature shaft decoder D-6840

    Untitled

    Abstract: No abstract text available
    Text: □IXYS VUE 50 Three Phase Rectifier Bridge dAV with Fast Recovery Epitaxial Diodes FRED rr 4/5 6 8 10 VRRM V Type 1200 1200 VUE 50-12N01 Test Conditions Kav Tk = 85°C, module Jpdt L-W- l-w- 200 210 A A VR= 0 t = 1 0 m s (50 Hz), sine t = 8.3 ms (60 Hz), sine


    OCR Scan     		PDF 50-12N01 00031S4

    Untitled

    Abstract: No abstract text available
    Text: 4bfibE2b OOO lbbl 7bl *IXY QIXYS MCC44 lTAV=2 x 49 A MCD44 vRRM= 400-1800 V Thyristor Modules Thyristor/Diode Modules > > > 500 700 900 1300 1500 1700 1900 400 600 800 1200 1400 1800 1800* Ii V r*m Vo«, V Type Version 1 B MCC44-06ÌO1 MCC44-08ÌO1 MCC44-12io1


    OCR Scan     		PDF MCC44 MCD44 MCC44-06Ã MCC44-08Ã MCC44-12io1 14lo1 MCC44-18io1

    Untitled

    Abstract: No abstract text available
    Text: 4bfifc.22b 0001Ô43 SQÖ IIX Y □IXYS ^C65 VCES IGBT Modules VII75-12S1 VCE sat = 75 A = 1200 V = 3.7 V — Î1 — U High Short Circuit SOA Capability r a W l L“ =1-— 8 o o 9 1=J1A Symbol Test Conditions VCES Tj = 25‘C to 150’C 1200 V Vco« Tj - 25'C to 150'C; RG6 = 1 Mi)


    OCR Scan     		PDF VII75-12S1 125-C Mbflb22b

    40n60 transistor

    Abstract: 30N60 40n60 30N60A 40n60 igbt 17N10 wiom DC transistor JE 1090 20N60A igbt equivalent to 40n60
    Text: MbE D • Mb S b S E b OO O O S T M T «IXY I X V S CORP T □IX Y S I V I S Data Book NO.91560A October 1991 "S" Series MOSIGBTs High Short Circuit SOA Insulated Gate Bipolar Transistor Features • • • Guaranteed Short Circuit Capability SCSOA Optimized for 60Hz to 30kHz Switching


    OCR Scan     		PDF 1560A 30kHz IXSH20N60 IXSM20N60 Tj-125 40n60 transistor 30N60 40n60 30N60A 40n60 igbt 17N10 wiom DC transistor JE 1090 20N60A igbt equivalent to 40n60