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    IXTM5N100 Price and Stock

    IXYS Corporation IXTM5N100

    MOSFET N-CH 1000V 5A TO204AA
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    IXYS Corporation IXTM5N100A

    MOSFET N-CH 1000V 5A TO204AA
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    IXTM5N100 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IXTM5N100 IXYS 500V IGBT with diode Original PDF
    IXTM5N100 IXYS High Voltage Power MOSFETs Scan PDF
    IXTM5N100 IXYS High Voltage Power MOSFETs Scan PDF
    IXTM5N100 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IXTM5N100 Unknown FET Data Book Scan PDF
    IXTM5N100 Sharp 1000 V, 5 A, sourse-drain diode Scan PDF
    IXTM5N100A IXYS 500V IGBT with diode Original PDF
    IXTM5N100A IXYS High Voltage Power MOSFETs Scan PDF
    IXTM5N100A IXYS High Voltage Power MOSFETs Scan PDF
    IXTM5N100A Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IXTM5N100A Unknown FET Data Book Scan PDF

    IXTM5N100 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MJ1005

    Abstract: MD5000A 2N3052 MJ12010 IXTP2N100A MD7000 MJ10011 MJ11017 IXTP4N90A MJ12007
    Text: STI Type: IXTM3N100A Notes: Breakdown Voltage: 1000 Continuous Current: 3 RDS on Ohm: 7.0 Trans Conductance Mhos: 1.5 Trans Conductance A: Gate Threshold min: Gate Threshold max: Resistance Switching ton: Resistance Switching toff: Resistance Switching ID:


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    PDF IXTM3N100A O-204AA/TO-3 IXTM3N70A IXTM3N70 O-204AA/TO-3: MJ13081 MJ13091 MJ1005 MD5000A 2N3052 MJ12010 IXTP2N100A MD7000 MJ10011 MJ11017 IXTP4N90A MJ12007

    5N95A

    Abstract: N-channel MOSFET to-247 50a P-CHANNEL 25A TO-247 POWER MOSFET ixth5n95
    Text: I X Y S □ I X Y CORP 1 ÖE D • 4t.0bE2b D00Gb03 b ■ IX T H 5 N 9 5 , IX T H 5 N 1 0 0 , IX T M 5 N 9 5 , IX T M 5 N 1 0 0 5 A M P S , 9 5 0-1000 V, 2.0Q /2.4Q S MAXIMUM RATINGS Parameter Sym. IXTH5N95 IXTMSN9S IXTH5N100 IXTM5N100 Drain-Source Voltage 1


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    PDF D00Gb03 IXTH5N95, IXTH5N100, IXTM5N95, IXTM5N100 IXTH5N95 IXTH5N100 O-204 O-220 5N95A N-channel MOSFET to-247 50a P-CHANNEL 25A TO-247 POWER MOSFET

    C289

    Abstract: IXTM5N100A
    Text: Standard Power MOSFET ix t h / ix t m s n io o IXTH/IXTM 5 N100A VD S S ^ D25 1000 V 1000 V 5A 5A D D S o n 2.4 £1 2.0 Q N-Channel Enhancement Mode Symbol Maximum Ratings Test Conditions V v oss T j = 25°C to 150“C 1000 V VDGR T j = 25°C to 150°C; RGS = 1 M il


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    PDF N100A O-247 O-204 O-247 C2-88 IXTH5N100 1XTM5N100 C2-89 C289 IXTM5N100A

    Irfp250 irfp460

    Abstract: IXTA3N120 36P10 IRFP450 bridge n503 irfp460 complementary IXTH30N25 IXTH48N15 IXTH12N100Q 16p20
    Text: OD Discrete Power MOSFETs G U Standard N-channel types V DSS min. V p W o n t DS on) TO-247 C“ "^C = 25°C 25°C A a As TO-204 (M) 150 (K) (R) TO-268 SOT-227B (N) ^ -W 60 0.024 IXTH60N10 67 0.025 IXTH67N10 75 75 0.020 0.020 IXTH75N10 48 TO-220 TO-252 (Y)


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    PDF O-204 O-264 ISOPLUS247 O-220 O-252 O-247 O-268 ISOPLUS220 O-263 OT-227B Irfp250 irfp460 IXTA3N120 36P10 IRFP450 bridge n503 irfp460 complementary IXTH30N25 IXTH48N15 IXTH12N100Q 16p20

    5n100

    Abstract: 5N100A
    Text: □IXYS Standard Power MOSFET IXTH/IXTM 5 N100 IXTH/IXTM 5 N100A vDSS ^D25 1000 V 1000 V 5A 5A DDS on 2.4 2.0 ft ft N-Channel Enhancement Mode Symbol Test Conditions V DSS Tj = 25 °C to 150°C 1000 V v DGR Tj = 25°C to 150°C; RGS = 1 MQ 1000 V VGS V GSM


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    PDF N100A O-247 O-204 O-204 O-247 4bflb52b 5n100 5N100A

    IXTH5N100A

    Abstract: gs 1117 ax
    Text: inixY S Standard Power MOSFET IXTH/IXTM 5N100 IXTH/IXTM 5N100A VDSS ^D25 1000 V 1000 V 5A 5A p DS on 2.4 Q 2.0 Q, N-Channel Enhancement Mode Maximum Ratings Symbol Test Conditions VDSS ^ =25°C to150°C 1000 V VoO R ^ = 2 5 °C to 1 5 0 °C ;R GS= 1 MQ 1000


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    PDF 5N100 5N100A to150 O-247 O-204 O-204 O-247 IXTH5N100 IXTM5N100 IXTH5N100A gs 1117 ax

    5N95A

    Abstract: 5N95 5N100 IXTH5N100 IXTH5N95 IXTM5N100 IXTM5N95
    Text: I X Y S □ I X Y CORP 1ÖE D • 4t.0bE2b D00Gb03 IX T H 5 N 9 5 , IX T H 5 N 1 0 0 , S b ■ IX T M 5 N 9 5 , IX T M 5 N 1 0 0 5 A M P S , 9 5 0 -1 0 0 0 V, 2.0 Q /2.4Q MAXIM UM RATINGS Parameter Sym. Drain-Source Voltage 1 V dss V dgr IXTH5N95 IXTMSN9S


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    PDF D00Gb03 IXTH5N95, IXTH5N100, IXTM5N95, IXTM5N100 IXTH5N95 IXTH5N100 O-247 00A/fjs 5N95A 5N95 5N100 IXTM5N95

    IRF250

    Abstract: IXTH13P20 IXTP2N95 IXTP2N100A IXTP2N95A IXTP4N100 IXTP4N100A IXTP4N90 IXTP4N90A IXTP4N95
    Text: I X Y S CORP 1ÔE D • 4böb52b QQODSbl S ■ f JIGH VOLTAGE POWER MOSFETs The IXYS family of high voltage Nand P-channel Power MOSFETs is designed to provide superior per­ formance and ruggedness in high voltage switching applications. In addition, they are directly com­


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    PDF 00V/12A IRF250 IXTH13P20 IXTP2N95 IXTP2N100A IXTP2N95A IXTP4N100 IXTP4N100A IXTP4N90 IXTP4N90A IXTP4N95

    IXTH13P20

    Abstract: 2n7100 IXTP2P50 MOSFET IRF460 irf460 to-247 IXTM10P50 IXTM11P50 IXTP4N100A 2n7103 irf460
    Text: I X Y S CORP 1ÔE D • 4böb52b QQODSbl S ■ f JIGH VOLTAGE POWER MOSFETs The IXYS family of high voltage Nand P-channel Power MOSFETs is designed to provide superior per­ formance and ruggedness in high voltage switching applications. In addition, they are directly com­


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    PDF

    IXTM6N90A

    Abstract: No abstract text available
    Text: 4686226 03E 00145 I X Y S CORP I X Y S CORP □3 D D Ë T | 4bflbS2b DDODIMS 2 N-Channel MOSFETs Drain Current Id @ 25 °C C ase On R esistance Part Drain-Source Voltage Number V BR DSS l[>(Cont) lO(Pulsed) RDS(on) (Volts) (Amps) (Amps) (O hm s) 1000 1000


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    PDF IXTM5N100A IXTM5N100 IXTM4N100A IXTM4N100 IXTM2N100A IXTM2N100 IXTM5N95A IXTM5N95 IXTM4N95A IXTM4N95 IXTM6N90A

    1800 IXYS

    Abstract: IXTM4N70A IXTM4N80 IXTM4N90 IXTM5N100 to-204
    Text: - m s it * f M t Vd s or € t JV £ Ta=25°C Vg s Ig s s Id s s Vg s th) F D s (on) Vd s = * /CH * /CH g fs lo (o n ) Ciss Coss C rss (*typ) (*typ) (*typ) (V) (W) (A) (nA) Vg s (V) < UA) Vd s (V) Id (mA) (max) (max) (max) (V) (V) (pF) (pF) (pF) 5^ m m %


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    PDF M4N50 T0-204 1XTM4N50A O-204 1XTM4N70 IXTM4N70A IXTM10N90A 1800 IXYS IXTM4N80 IXTM4N90 IXTM5N100 to-204