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    MOSFET IRF3415 Search Results

    MOSFET IRF3415 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET IRF3415 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AN-994

    Abstract: IRF3415 IRF3415S IRF530S st ld 33 22A17
    Text: Previous Datasheet Index Next Data Sheet PD- 9.1509A IRF3415S PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Surface Mount l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l D l VDSS = 150V


    Original     		PDF IRF3415S AN-994 IRF3415 IRF3415S IRF530S st ld 33 22A17

    IRF3415S

    Abstract: AN-994 IRF3415 IRF3415L
    Text: PD - 91509C IRF3415S/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF3415S Low-profile through-hole (IRF3415L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 150V RDS(on) = 0.042Ω G ID = 43A


    Original     		PDF 91509C IRF3415S/L IRF3415S) IRF3415L) IRF3415S AN-994 IRF3415 IRF3415L

    AM 22A

    Abstract: 1477B IRF3415
    Text: Previous Datasheet Index Next Data Sheet PD 9.1477B IRF3415 PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 150V RDS on = 0.042Ω G Description


    Original     		PDF 1477B IRF3415 O-220 AM 22A 1477B IRF3415

    AN-994

    Abstract: IRF3415 IRF3415L IRF3415S
    Text: PD - 91509C IRF3415S/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF3415S Low-profile through-hole (IRF3415L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 150V RDS(on) = 0.042Ω G ID = 43A


    Original     		PDF 91509C IRF3415S/L IRF3415S) IRF3415L) AN-994 IRF3415 IRF3415L IRF3415S

    IRF34

    Abstract: IRF3415 mosfet irf3415
    Text: FOR REVIEW ONLY IRF3415 HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 150V RDS on = 0.042Ω G Description ID = 43A S Fifth Generation HEXFETs from International Rectifier


    Original     		PDF IRF3415 O-220 O-220AB IRF34 IRF3415 mosfet irf3415

    IRF3415

    Abstract: K 9008
    Text: PD - 91477E IRF3415 HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 150V RDS on = 0.042Ω G Description ID = 43A S Fifth Generation HEXFETs from International Rectifier


    Original     		PDF 91477E IRF3415 O-220 poIRF3415 O-220AB IRF3415 K 9008

    Untitled

    Abstract: No abstract text available
    Text: PD - 91477E IRF3415 HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 150V RDS on = 0.042Ω G Description ID = 43A S Fifth Generation HEXFETs from International Rectifier


    Original     		PDF 91477E IRF3415 O-220 O-220AB

    Untitled

    Abstract: No abstract text available
    Text: PD - 91477E IRF3415 HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 150V RDS on = 0.042Ω G Description ID = 43A S Fifth Generation HEXFETs from International Rectifier


    Original     		PDF 91477E IRF3415 O-220 O-220AB

    IRF3415

    Abstract: IRF3415 circuit IRF3415 equivalent 1810ms
    Text: PD - 91477D IRF3415 HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 150V RDS on = 0.042Ω G Description ID = 43A S Fifth Generation HEXFETs from International Rectifier


    Original     		PDF 91477D IRF3415 O-220 IRF3415 IRF3415 circuit IRF3415 equivalent 1810ms

    Untitled

    Abstract: No abstract text available
    Text: PD - 94963 IRF3415PbF l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 150V RDS on = 0.042Ω G Description ID = 43A S Fifth Generation HEXFETs from International Rectifier


    Original     		PDF IRF3415PbF O-220 O-220AB. O-220AB

    Untitled

    Abstract: No abstract text available
    Text: PD - 94963 IRF3415PbF HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 150V RDS on = 0.042" G Description ID = 43A S Fifth Generation HEXFETs from International Rectifier


    Original     		PDF IRF3415PbF O-220 O-220AB

    f1010

    Abstract: IRF3415PBF
    Text: PD - 94963 IRF3415PbF l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 150V RDS on = 0.042Ω G Description ID = 43A S Fifth Generation HEXFETs from International Rectifier


    Original     		PDF IRF3415PbF O-220 O-220AB f1010 IRF3415PBF

    Untitled

    Abstract: No abstract text available
    Text: PD - 94963 IRF3415PbF l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 150V RDS on = 0.042Ω G Description ID = 43A S Fifth Generation HEXFETs from International Rectifier


    Original     		PDF IRF3415PbF O-220 O-220AB. O-220AB

    IRG41BC20W

    Abstract: IRG41BC20UD Drive circuit for IGBT using IR2130 IR2184 application notes IR2110 driver CIRCUIT FOR INVERTERS DC MOTOR SPEED CONTROL USING IGBT IRG41BC30W IR2181 application notes IR2103 bldc driver 1KW dc motor
    Text: TABLE OF CONTENTS Selection Guides Fast Diode Die Data Sheets FRED Die Data Sheets HEXFET Power MOSFET Die Data Sheets HEXFRED® Rectifier Die Data Sheets IC Data Sheets IGBT Die Data Sheets IGBT Modules for Motor Drive & UPS IGBT Modules for Motor Drives in Industrial Electric Vehicles


    Original     		PDF O-220 IR2130 230VAC IR2133 460VAC IR2233 IR2137/IR2171 IRG41BC20W IRG41BC20UD Drive circuit for IGBT using IR2130 IR2184 application notes IR2110 driver CIRCUIT FOR INVERTERS DC MOTOR SPEED CONTROL USING IGBT IRG41BC30W IR2181 application notes IR2103 bldc driver 1KW dc motor

    AN-994

    Abstract: IRF3415
    Text: IRF3415S/L Electrical Characteristics @ TJ = 25°C unless otherwise specified Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage gfs


    Original     		PDF IRF3415S/L AN-994 IRF3415

    BC548 TRANSISTOR REPLACEMENT

    Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
    Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction


    Original     		PDF BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587

    b-bios

    Abstract: No abstract text available
    Text: PD 9.1477C International ICR Rectifier IRF3415 PRELIMINARY HEXFET^ Power MOSFET • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS= 150V R DS on = Description Id = 0.042Í2


    OCR Scan     		PDF 1477C IRF3415 O-220 b-bios

    RF1010

    Abstract: diode body marking A 4
    Text: P D - 9.1477 International XâR Rectifier IRF3415 PRELIMINARY HEXFET Power MOSFET • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated V DSs R DS on Description Id = 150V


    OCR Scan     		PDF IRF3415 O-220 RF1010 diode body marking A 4

    Untitled

    Abstract: No abstract text available
    Text: PD-91509C International IGR Rectifier IRF3415S/L HEXFET Power MOSFET • • • • • • A dvanced Process Technology Surface M ount IRF3415S Low-profile through-hole (IRF3415L) 1 7 5 °C O perating Tem perature Fast Switching Fully Avalanche Rated


    OCR Scan     		PDF PD-91509C IRF3415S/L IRF3415S) IRF3415L)

    MARKING J9B

    Abstract: No abstract text available
    Text: PD- 9.1509B International I R Rectifier IRF3415S PRELIMINARY HEXFET Power MOSFET • Advanced Process Technology • Surface Mount • Dynamic dv/dt Rating • • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated Description V d s s = 15 0 V


    OCR Scan     		PDF 1509B IRF3415S MARKING J9B

    Untitled

    Abstract: No abstract text available
    Text: PD-91477D International IÖR Rectifier IRF3415 HEXFET Power MOSFET • • • • • Advanced Process Technology Dynam ic dv/dt Rating 1 7 5 °C O perating Tem perature Fast Switching Fully A valanche Rated V dss = 150 V R ü S o n = 0 . 0 4 2 Î 2


    OCR Scan     		PDF PD-91477D IRF3415 O-220

    ixfh26n60q

    Abstract: 2SK2333 2SK2761 IRF1405 BUZ345 BSS89 irfp250n P9NB60 irfp260n 2sk2671
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi N-MOSFET copTMpoBKa no HanpflweHMro UDS Kofl: SI4466DY SI4966DY SI9925DY SI9942DY 2SK1388 IRF7319 IRF7413 IRF7455 IRL2203N IRL3103 IRL3713 IRL3803 IRL3803S IRLL2703 SI4404DY SI4412ADY


    OCR Scan     		PDF SI4466DY SI4966DY SI9925DY SI9942DY 2SK1388 T0220AB IRF7319 IRF7413 IRF7455 IRL2203N ixfh26n60q 2SK2333 2SK2761 IRF1405 BUZ345 BSS89 irfp250n P9NB60 irfp260n 2sk2671

    sot23 BS170

    Abstract: 2SK2671 P3NB60 IXFN27N80 IRFL014N STP22NE10L irf6348 IRF7305 rfp40n IXTN21N100
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi N-MOSFET (copTMpoBKa no TOKy lD) Kofl: BS107 BSS123 BS170 BSS138 BS108 BSN304 BSS89 IRFD310 IRFD420 IRFD210 IRFD320 2N7002 IRFD220 IRFL210 IRFD110 IRLD110 IRFD120


    OCR Scan     		PDF BS107 BSS123 BS170 BSS138 BS108 BSN304 BSS89 IRFD310 IRFD420 IRFD210 sot23 BS170 2SK2671 P3NB60 IXFN27N80 IRFL014N STP22NE10L irf6348 IRF7305 rfp40n IXTN21N100

    IRF3415 equivalent

    Abstract: pn 222A IRFI3415 IRF3415 IRFI840G
    Text: International IOR Rectifier pd-9.1624 IRFI3415 PRELIMINARY HEXFET Power MOSFET • • • • • Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS D Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated V Ds s = 1 5 0 V


    OCR Scan     		PDF IRFI3415 O-220 IRF3415 equivalent pn 222A IRFI3415 IRF3415 IRFI840G