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    IRF3415 equivalent

    Abstract: pn 222A IRFI3415 IRF3415 IRFI840G
    Text: International IOR Rectifier pd-9.1624 IRFI3415 PRELIMINARY HEXFET Power MOSFET • • • • • Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS D Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated V Ds s = 1 5 0 V


    OCR Scan     		PDF IRFI3415 O-220 IRF3415 equivalent pn 222A IRFI3415 IRF3415 IRFI840G

    IRF3415 equivalent

    Abstract: IRFI3415 IRF1
    Text: P D - 9.1624 International IG R Rectifier IRFI3415 PRELIMINARY H E XFE T Pow er M O S F E T • Advanced Process Technology • Isolated Package • High Voltage Isolation = 2.5KVRMS • Sink to Lead Creepage Dist. = 4.8mm • Fully Avalanche Rated VDss = 150V


    OCR Scan     		PDF IRFI3415 IRF3415 equivalent IRFI3415 IRF1