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    MOSFET D2010 Search Results

    MOSFET D2010 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET D2010 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GNS430

    Abstract: D5014UK D1028UK d5017 D2089 D2207UK D1029UK d2253 d5030 D5003UK
    Text: Images of Garmin's GNS530 and GNS430 courtesy of Garmin Ltd. Copyright 1998-2006: Garmin Ltd. or its subsidiaries. All rights reserved. Technical Excellence Quality and Experience in RF Technology Worldwide RF Sales Representatives Semelab RF MOSFETs are manufactured using a unique silicon


    Original     		PDF GNS530 GNS430 750mW break400 1-200MHz 1-500MHz 1-400MHz D5014UK D1028UK d5017 D2089 D2207UK D1029UK d2253 d5030 D5003UK

    Diode 400V 5A

    Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
    Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM


    Original     		PDF 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN

    d2012 mosfet

    Abstract: D2010 P H D2010 d2009 D2017 "MOSFET Modules" T D2012 D2025 MOSFET d2010
    Text: SENSITRON SEMICONDUCTOR 1998 • SHORT FORM CATALOG - Revision HERMETIC MOSFET MODULES N - C h a n n e l M O S F E T C H A R A C T E R IS T IC S Continuous Drain Current lc @ Tc-25°C Pulsed Drain Current Tc=25°c 1 ms Volts Amps Amps 60 2 0 11’ 200 0.028


    OCR Scan     		PDF Tc-25 D2001 D2002 D2003 MOD2007 MOD2008 D2009 D2010 MOD2011 D2012 d2012 mosfet D2010 P H D2017 "MOSFET Modules" T D2012 D2025 MOSFET d2010

    Analog Devices model 233J

    Abstract: alfa uv API 45 AD0042C AC1007 analog devices TSDC1610 AD504 fetal monitor device circuit diagrams AD533J Helitrim AD 233J
    Text: ANALOG DEVICES PRODUCT GUIDE Copyright 1975 by Analog Devices, Inc. FOREWORD This book is a guide to the broadest range of electronic compo­ nents and devices needed by designers of instrumentation and control systems which accept, analyze, process, convert, trans­


    OCR Scan     		PDF AD504J/K/L/M/S AD505 AD506J/K/L/S AD507J/K/S AD2001 AD2002 AD2003 AD2004 AD2006 AD2008 Analog Devices model 233J alfa uv API 45 AD0042C AC1007 analog devices TSDC1610 AD504 fetal monitor device circuit diagrams AD533J Helitrim AD 233J