300 Amp mosfet
Abstract: mosfet 400 amp MOSFET FOR 100khz SWITCHING APPLICATIONS 50 Amp Mosfet dual jfet vhf jfet 133 jfet transistor mosfet amp DUAL JFET Pch low voltage mosfet switch 3 amp
Text: FIELD EFFECT TRANSISTORS FET NTE Type No. Polarity and Material Description and Application 132 JFET N-CH 133 JFET N-CH 221 Dual Gate MOSFET N-CH 222 Dual Gate MOSFET N-CH 312 JFET N-CH JFET P-CH 326 451 452 JFET N-CH JFET N-CH 454 Dual Gate MOSFET N-CH
|
OCR Scan
|
400MHz
T0106
200MHz
18Typ
250pA
tiMaias11!
300 Amp mosfet
mosfet 400 amp
MOSFET FOR 100khz SWITCHING APPLICATIONS
50 Amp Mosfet
dual jfet vhf
jfet 133
jfet transistor
mosfet amp
DUAL JFET Pch
low voltage mosfet switch 3 amp
|
PDF
|
AN569
Abstract: MTW20N50E
Text: MTW20N50E Preferred Device Power MOSFET 20 Amps, 500 Volts N–Channel TO–247 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is
|
Original
|
MTW20N50E
r14525
MTW20N50E/D
AN569
MTW20N50E
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MTW20N50E Preferred Device Power MOSFET 20 Amps, 500 Volts N−Channel TO−247 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is
|
Original
|
MTW20N50E
O-247
r14525
MTW20N50E/D
|
PDF
|
TL 188 TRANSISTOR PIN DIAGRAM
Abstract: AN569 MTY20N50E
Text: MTY20N50E Preferred Device Power MOSFET 20 Amps, 500 Volts N–Channel TO–264 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is
|
Original
|
MTY20N50E
r14525
MTY20N50E/D
TL 188 TRANSISTOR PIN DIAGRAM
AN569
MTY20N50E
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MTY20N50E Preferred Device Power MOSFET 20 Amps, 500 Volts N−Channel TO−264 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is
|
Original
|
MTY20N50E
MTY20N50E/D
|
PDF
|
Untitled
Abstract: No abstract text available
Text: International [^Rectifier PD - 9.1099B IR F 7 1 0 7 PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching N-CHANNEL MOSFET
|
OCR Scan
|
1099B
55MS2
002b511
IRF7107
002b5
|
PDF
|
RSD130P10
Abstract: rsd220n06 RDR005N25 RP1E090 RSD130P R6015 RCD040N25 rcd080n25 RSD050N10 R5207AND
Text: 2010 ѻકⳂᔩ Discrete Semiconductors MOSFET MOSFET ᦤկ㛑ᑨ⫼Ѣᑓ⊯乚ඳⱘPower MOSFETˈҢ⫼Ѣ֓ᨎ䆒ⱘǃ 䞛⫼њ㊒ᆚᎹᑣⱘ䍙Ԣᇐ䗮⬉䰏䚼ӊˈࠄ⫼Ѣᓔ݇⬉⑤ⱘǃ催ᬜ⥛ 㗤催य़䚼ӊˈϔᑨܼׅDŽ 01 MOSFET Contents
|
Original
|
RUM002N02
RZM002P02
RUE002N02
RZE002P02
RUM002N05
RUE002N05
RZF013P01
RZL025P01
RZR020P01
RW1A013ZP
RSD130P10
rsd220n06
RDR005N25
RP1E090
RSD130P
R6015
RCD040N25
rcd080n25
RSD050N10
R5207AND
|
PDF
|
eft 317 transistor
Abstract: NUD3160 636 MOSFET TRANSISTOR MDC3105 SGD525 datasheet relay 346 766 IEC61000-4-4 MDC3105D NUD3105 Distributors and Sales Partners
Text: 5 V Relay Driver Socket 12 V Relay Driver Socket Bipolar Relay Driver Socket - NUD3105 MOSFET Relay Driver Socket - NUD3112 Water Valve Relay Vibrator Motor Microprocessor Microprocessor 24 V Relay Driver Socket MOSFET Relay Driver Socket - NUD3124 Window
|
Original
|
NUD3105
NUD3112
NUD3124
IEC61000-4-4
SGD525-0
SGD525/D
eft 317 transistor
NUD3160
636 MOSFET TRANSISTOR
MDC3105
SGD525
datasheet relay 346 766
MDC3105D
NUD3105
Distributors and Sales Partners
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD-9.1647 International IQR Rectifier IRF7523D1 PRELIMINARY FETKY MOSFET and Schottky Diode Co-packaged HEXFET Power MOSFET and Schottky Diode N-Channel HEXFET Low VF Schottky Rectifier Generation V Technology Micro8 Footprint a o r- ID K ur * - - 3 g an
|
OCR Scan
|
IRF7523D1
Rf7523d1
0D2B023
|
PDF
|
diode marking 226
Abstract: TS16949 ZXMN2F30FH ZXMN2F30FHTA
Text: ZXMN2F30FH 20V SOT23 N-channel enhancement mode MOSFET Summary V BR DSS RDS(on) (Ω) ID (A) 20 0.045 @ VGS= 4.5V 4.9 0.065 @ VGS= 2.5V 4.1 Description This new generation Trench MOSFET from Zetex features low onresistance achievable with low (2.5V) gate drive.
|
Original
|
ZXMN2F30FH
ZXMN2F30FHTA
D-81541
diode marking 226
TS16949
ZXMN2F30FH
ZXMN2F30FHTA
|
PDF
|
D8154
Abstract: ZXMN2F30FH
Text: ZXMN2F30FH 20V SOT23 N-channel enhancement mode MOSFET Summary V BR DSS RDS(on) (Ω) ID (A) 20 0.045 @ VGS= 4.5V 4.9 0.065 @ VGS= 2.5V 4.1 Description This new generation Trench MOSFET from Zetex features low onresistance achievable with low (2.5V) gate drive.
|
Original
|
ZXMN2F30FH
ZXMN2F30FHTA
ZXMN2F30FH
522-ZXMN2F30FHTA
ZXMN2F30FHTA
D8154
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Product specification ZXMN2F30FH 20V SOT23 N-channel enhancement mode MOSFET Summary V BR DSS RDS(on) (Ω) ID (A) 20 0.045 @ VGS= 4.5V 4.9 0.065 @ VGS= 2.5V 4.1 Description This new generation Trench MOSFET from TY features low onresistance achievable with low (2.5V) gate drive.
|
Original
|
ZXMN2F30FH
ZXMN2F30FHme
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD - 9.1240C International ie R Rectifier IRF7304 HEXFET Power MOSFET • • • • • • • Generation V Technology Ultra Low On-Resistance Dual P-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching V qss = -20 V
|
OCR Scan
|
1240C
IRF7304
California90245,
002flflb3
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PI2121 Series 8 Volt, 24 Amp Full-Function Active ORing Solution Description Features The PI2121 is a complete full-function Active ORing solution with a high-speed ORing MOSFET controller and a very low on-state resistance MOSFET designed for use in redundant
|
Original
|
PI2121
PI2121,
PI2121
|
PDF
|
|
|
IRFD9220
Abstract: No abstract text available
Text: IRFD9220 Data Sheet July 1999 0.6A, 200V, 1.500 Ohm, P-Channel Power MOSFET File Number 2286.3 Features • 0.6A, 200V This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
|
Original
|
IRFD9220
IRFD9220
|
PDF
|
PI2121
Abstract: PI2121-00-LGIZ
Text: PI2121 TM Cool-ORing Series 8 Volt, 24 Amp Full-Function Active ORing Solution Description Features TM The Cool-ORing PI2121 is a complete full-function Active ORing solution with a high-speed ORing MOSFET controller and a very low on-state resistance MOSFET designed for use in redundant
|
Original
|
PI2121
PI2121
PI2121-00-LGIZ
|
PDF
|
Untitled
Abstract: No abstract text available
Text: P D - 9 .1 2 6 4 C International IG R Rectifier IRF7606 HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile <1.1 mm Available in Tape & Reel Fast Switching Vqss = -30V ^ D S (o n) = 0.09Q
|
OCR Scan
|
IRF7606
|
PDF
|
Si7625DN
Abstract: S10-0638-Rev si7625
Text: New Product Si7625DN Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.007 at VGS = - 10 V - 35d 0.011 at VGS = - 4.5 V - 35d - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
|
Original
|
Si7625DN
2002/95/EC
Si7625DN-T1-GE3
18-Jul-08
S10-0638-Rev
si7625
|
PDF
|
mtn4n60
Abstract: 4N60 application note mosfet 4n60 power supply mosfet 4n60 MT*4n60 4N60 MTN4N60FP C408F TO-220F DSA006750
Text: CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTN4N60FP Spec. No. : C408FP Issued Date : 2008.09.02 Revised Date :2009.04.20 Page No. : 1/9 BVDSS : 650V @Tj=150℃ RDS ON : 2.2Ω ID : 4A Description The MTN4N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best
|
Original
|
MTN4N60FP
C408FP
MTN4N60FP
O-220FP
UL94V-0
mtn4n60
4N60 application note
mosfet 4n60 power supply
mosfet 4n60
MT*4n60
4N60
C408F
TO-220F
DSA006750
|
PDF
|
Untitled
Abstract: No abstract text available
Text: New Product Si7625DN Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.007 at VGS = - 10 V - 35d 0.011 at VGS = - 4.5 V - 35d - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
|
Original
|
Si7625DN
2002/95/EC
Si7625DN-T1-GE3
18-Jul-08
|
PDF
|
DMG1012
Abstract: ZVN4206GV ZXMS6004FFTA zxmhc3f381n8 DMP2066 DMN2075 DMN2041 ZVN4306G dmp2035 ZXMHC3A01N8
Text: DIO 1931 MOSFET brochure Final Artwork extra amends 13/1/10 11:51 Page 1 MOSFETs www.diodes.com DIO 1931 MOSFET brochure (Final Artwork extra amends) 13/1/10 11:51 Page 2 DIODES INCORPORATED’S PRODUCTS ARE DESIGNED FOR HIGH PERFORMANCE, ACROSS A WIDE RANGE OF EXISTING AND EMERGING APPLICATIONS
|
Original
|
A1103-04,
DMG1012
ZVN4206GV
ZXMS6004FFTA
zxmhc3f381n8
DMP2066
DMN2075
DMN2041
ZVN4306G
dmp2035
ZXMHC3A01N8
|
PDF
|
5N60
Abstract: MTN5N60FP
Text: CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTN5N60FP Spec. No. : C408FP-A Issued Date : 2009.04.20 Revised Date : Page No. : 1/9 BVDSS : 650V @Tj=150℃ RDS ON : 2.5Ω ID : 4.5A Description The MTN5N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best
|
Original
|
MTN5N60FP
C408FP-A
MTN5N60FP
O-220FP
UL94V-0
5N60
|
PDF
|
Untitled
Abstract: No abstract text available
Text: New Product Si7625DN Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.007 at VGS = - 10 V - 35d 0.011 at VGS = - 4.5 V - 35d - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
|
Original
|
Si7625DN
2002/95/EC
Si7625DN-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: New Product Si7625DN Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.007 at VGS = - 10 V - 35d 0.011 at VGS = - 4.5 V - 35d - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
|
Original
|
Si7625DN
2002/95/EC
Si7625DN-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
