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    MOSFET 452 Search Results

    MOSFET 452 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 452 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AN569

    Abstract: MTW20N50E
    Text: MTW20N50E Preferred Device Power MOSFET 20 Amps, 500 Volts N–Channel TO–247 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is


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    PDF MTW20N50E r14525 MTW20N50E/D AN569 MTW20N50E

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    Abstract: No abstract text available
    Text: MTW20N50E Preferred Device Power MOSFET 20 Amps, 500 Volts N−Channel TO−247 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is


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    PDF MTW20N50E O-247 r14525 MTW20N50E/D

    TL 188 TRANSISTOR PIN DIAGRAM

    Abstract: AN569 MTY20N50E
    Text: MTY20N50E Preferred Device Power MOSFET 20 Amps, 500 Volts N–Channel TO–264 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is


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    PDF MTY20N50E r14525 MTY20N50E/D TL 188 TRANSISTOR PIN DIAGRAM AN569 MTY20N50E

    Untitled

    Abstract: No abstract text available
    Text: MTY20N50E Preferred Device Power MOSFET 20 Amps, 500 Volts N−Channel TO−264 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is


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    PDF MTY20N50E MTY20N50E/D

    RSD130P10

    Abstract: rsd220n06 RDR005N25 RP1E090 RSD130P R6015 RCD040N25 rcd080n25 RSD050N10 R5207AND
    Text: 2010 ѻકⳂᔩ Discrete Semiconductors MOSFET MOSFET ᦤկ㛑໳ᑨ⫼Ѣᑓ⊯乚ඳⱘPower MOSFETˈҢ⫼Ѣ֓ᨎ䆒໛ⱘǃ 䞛⫼њ㊒ᆚᎹᑣⱘ䍙Ԣᇐ䗮⬉䰏䚼ӊˈࠄ⫼Ѣᓔ݇⬉⑤ⱘǃ催ᬜ⥛ 㗤催य़䚼ӊˈϔᑨ‫ܼׅ‬DŽ 01 MOSFET Contents


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    PDF RUM002N02 RZM002P02 RUE002N02 RZE002P02 RUM002N05 RUE002N05 RZF013P01 RZL025P01 RZR020P01 RW1A013ZP RSD130P10 rsd220n06 RDR005N25 RP1E090 RSD130P R6015 RCD040N25 rcd080n25 RSD050N10 R5207AND

    eft 317 transistor

    Abstract: NUD3160 636 MOSFET TRANSISTOR MDC3105 SGD525 datasheet relay 346 766 IEC61000-4-4 MDC3105D NUD3105 Distributors and Sales Partners
    Text: 5 V Relay Driver Socket 12 V Relay Driver Socket Bipolar Relay Driver Socket - NUD3105 MOSFET Relay Driver Socket - NUD3112 Water Valve Relay Vibrator Motor Microprocessor Microprocessor 24 V Relay Driver Socket MOSFET Relay Driver Socket - NUD3124 Window


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    PDF NUD3105 NUD3112 NUD3124 IEC61000-4-4 SGD525-0 SGD525/D eft 317 transistor NUD3160 636 MOSFET TRANSISTOR MDC3105 SGD525 datasheet relay 346 766 MDC3105D NUD3105 Distributors and Sales Partners

    diode marking 226

    Abstract: TS16949 ZXMN2F30FH ZXMN2F30FHTA
    Text: ZXMN2F30FH 20V SOT23 N-channel enhancement mode MOSFET Summary V BR DSS RDS(on) (Ω) ID (A) 20 0.045 @ VGS= 4.5V 4.9 0.065 @ VGS= 2.5V 4.1 Description This new generation Trench MOSFET from Zetex features low onresistance achievable with low (2.5V) gate drive.


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    PDF ZXMN2F30FH ZXMN2F30FHTA D-81541 diode marking 226 TS16949 ZXMN2F30FH ZXMN2F30FHTA

    D8154

    Abstract: ZXMN2F30FH
    Text: ZXMN2F30FH 20V SOT23 N-channel enhancement mode MOSFET Summary V BR DSS RDS(on) (Ω) ID (A) 20 0.045 @ VGS= 4.5V 4.9 0.065 @ VGS= 2.5V 4.1 Description This new generation Trench MOSFET from Zetex features low onresistance achievable with low (2.5V) gate drive.


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    PDF ZXMN2F30FH ZXMN2F30FHTA ZXMN2F30FH 522-ZXMN2F30FHTA ZXMN2F30FHTA D8154

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    Abstract: No abstract text available
    Text: Product specification ZXMN2F30FH 20V SOT23 N-channel enhancement mode MOSFET Summary V BR DSS RDS(on) (Ω) ID (A) 20 0.045 @ VGS= 4.5V 4.9 0.065 @ VGS= 2.5V 4.1 Description This new generation Trench MOSFET from TY features low onresistance achievable with low (2.5V) gate drive.


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    PDF ZXMN2F30FH ZXMN2F30FHme

    Untitled

    Abstract: No abstract text available
    Text:  PI2121  Series 8 Volt, 24 Amp Full-Function Active ORing Solution Description Features The  PI2121 is a complete full-function Active ORing solution with a high-speed ORing MOSFET controller and a very low on-state resistance MOSFET designed for use in redundant


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    PDF PI2121 PI2121, PI2121

    electromechanical relay

    Abstract: EIGHT MOSFET ARRAY MOSFET designer manual series connection of mosfet G3VM-X st 393 8-pin relay 6v 8 pin G3VM-401A optical mosfet Photo MOS Relay
    Text: Technical Information – MOSFET Relays Introduction New models and a wider range provide an array of solutions, meeting the needs of today’s high performance applications. Our new range of MOSFET relays, Type G3VM, set the benchmark in Solid State Relays SSRs . Products are manufactured using


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    PDF G3VM-402J electromechanical relay EIGHT MOSFET ARRAY MOSFET designer manual series connection of mosfet G3VM-X st 393 8-pin relay 6v 8 pin G3VM-401A optical mosfet Photo MOS Relay

    IRFD9220

    Abstract: No abstract text available
    Text: IRFD9220 Data Sheet July 1999 0.6A, 200V, 1.500 Ohm, P-Channel Power MOSFET File Number 2286.3 Features • 0.6A, 200V This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


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    PDF IRFD9220 IRFD9220

    PI2121

    Abstract: PI2121-00-LGIZ
    Text: PI2121 TM Cool-ORing Series 8 Volt, 24 Amp Full-Function Active ORing Solution Description Features TM The Cool-ORing PI2121 is a complete full-function Active ORing solution with a high-speed ORing MOSFET controller and a very low on-state resistance MOSFET designed for use in redundant


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    PDF PI2121 PI2121 PI2121-00-LGIZ

    Si7625DN

    Abstract: S10-0638-Rev si7625
    Text: New Product Si7625DN Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.007 at VGS = - 10 V - 35d 0.011 at VGS = - 4.5 V - 35d - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


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    PDF Si7625DN 2002/95/EC Si7625DN-T1-GE3 18-Jul-08 S10-0638-Rev si7625

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7625DN Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.007 at VGS = - 10 V - 35d 0.011 at VGS = - 4.5 V - 35d - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


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    PDF Si7625DN 2002/95/EC Si7625DN-T1-GE3 18-Jul-08

    DMG1012

    Abstract: ZVN4206GV ZXMS6004FFTA zxmhc3f381n8 DMP2066 DMN2075 DMN2041 ZVN4306G dmp2035 ZXMHC3A01N8
    Text: DIO 1931 MOSFET brochure Final Artwork extra amends 13/1/10 11:51 Page 1 MOSFETs www.diodes.com DIO 1931 MOSFET brochure (Final Artwork extra amends) 13/1/10 11:51 Page 2 DIODES INCORPORATED’S PRODUCTS ARE DESIGNED FOR HIGH PERFORMANCE, ACROSS A WIDE RANGE OF EXISTING AND EMERGING APPLICATIONS


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    PDF A1103-04, DMG1012 ZVN4206GV ZXMS6004FFTA zxmhc3f381n8 DMP2066 DMN2075 DMN2041 ZVN4306G dmp2035 ZXMHC3A01N8

    5N60

    Abstract: MTN5N60FP
    Text: CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTN5N60FP Spec. No. : C408FP-A Issued Date : 2009.04.20 Revised Date : Page No. : 1/9 BVDSS : 650V @Tj=150℃ RDS ON : 2.5Ω ID : 4.5A Description The MTN5N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best


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    PDF MTN5N60FP C408FP-A MTN5N60FP O-220FP UL94V-0 5N60

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7625DN Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.007 at VGS = - 10 V - 35d 0.011 at VGS = - 4.5 V - 35d - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


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    PDF Si7625DN 2002/95/EC Si7625DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7625DN Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.007 at VGS = - 10 V - 35d 0.011 at VGS = - 4.5 V - 35d - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


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    PDF Si7625DN 2002/95/EC Si7625DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    300 Amp mosfet

    Abstract: mosfet 400 amp MOSFET FOR 100khz SWITCHING APPLICATIONS 50 Amp Mosfet dual jfet vhf jfet 133 jfet transistor mosfet amp DUAL JFET Pch low voltage mosfet switch 3 amp
    Text: FIELD EFFECT TRANSISTORS FET NTE Type No. Polarity and Material Description and Application 132 JFET N-CH 133 JFET N-CH 221 Dual Gate MOSFET N-CH 222 Dual Gate MOSFET N-CH 312 JFET N-CH JFET P-CH 326 451 452 JFET N-CH JFET N-CH 454 Dual Gate MOSFET N-CH


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    PDF 400MHz T0106 200MHz 18Typ 250pA tiMaias11! 300 Amp mosfet mosfet 400 amp MOSFET FOR 100khz SWITCHING APPLICATIONS 50 Amp Mosfet dual jfet vhf jfet 133 jfet transistor mosfet amp DUAL JFET Pch low voltage mosfet switch 3 amp

    Untitled

    Abstract: No abstract text available
    Text: International [^Rectifier PD - 9.1099B IR F 7 1 0 7 PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching N-CHANNEL MOSFET


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    PDF 1099B 55MS2 002b511 IRF7107 002b5

    Untitled

    Abstract: No abstract text available
    Text: PD-9.1647 International IQR Rectifier IRF7523D1 PRELIMINARY FETKY MOSFET and Schottky Diode Co-packaged HEXFET Power MOSFET and Schottky Diode N-Channel HEXFET Low VF Schottky Rectifier Generation V Technology Micro8 Footprint a o r- ID K ur * - - 3 g an


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    PDF IRF7523D1 Rf7523d1 0D2B023

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.1240C International ie R Rectifier IRF7304 HEXFET Power MOSFET • • • • • • • Generation V Technology Ultra Low On-Resistance Dual P-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching V qss = -20 V


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    PDF 1240C IRF7304 California90245, 002flflb3

    Untitled

    Abstract: No abstract text available
    Text: P D - 9 .1 2 6 4 C International IG R Rectifier IRF7606 HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile <1.1 mm Available in Tape & Reel Fast Switching Vqss = -30V ^ D S (o n) = 0.09Q


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    PDF IRF7606