Untitled
Abstract: No abstract text available
Text: Datasheet R8C/38T-A Group RENESAS MCU 1. R01DS0081EJ0100 Rev.1.00 Dec 09, 2011 Overview 1.1 Features The R8C/38T-A Group of single-chip microcontrollers MCUs incorporates the R8C CPU core, which provides sophisticated instructions for a high level of efficiency. With 1 Mbyte of address space, the CPU core is capable of
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R5F21368snfp
Abstract: 06B2D 0025DH 00285H
Text: Datasheet R8C/36T-A Group RENESAS MCU 1. R01DS0055EJ0100 Rev.1.00 Dec 09, 2011 Overview 1.1 Features The R8C/36T-A Group of single-chip microcontrollers MCUs incorporates the R8C CPU core, which provides sophisticated instructions for a high level of efficiency. With 1 Mbyte of address space, the CPU core is capable of
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R01DS0055EJ0100
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R5F21368snfp
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06B2D
Abstract: 0029E 000E8H 002C1H 0028b 0027AH 0025DH 00285H 06B13
Text: Preliminary Datasheet Specifications in this document are tentative and subject to change. R8C/38T-A Group RENESAS MCU 1. R01DS0081EJ0001 Rev.0.01 Feb 23, 2011 Overview 1.1 Features The R8C/38T-A Group single-chip microcontrollers MCUs incorporate the R8C CPU core, which provides
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R8C/38T-A
R01DS0081EJ0001
R8C/38TA
06B2D
0029E
000E8H
002C1H
0028b
0027AH
0025DH
00285H
06B13
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06B2D
Abstract: p9530 0023AH 0025DH 00285H
Text: Datasheet R8C/38T-A Group RENESAS MCU 1. R01DS0081EJ0100 Rev.1.00 Dec 09, 2011 Overview 1.1 Features The R8C/38T-A Group of single-chip microcontrollers MCUs incorporates the R8C CPU core, which provides sophisticated instructions for a high level of efficiency. With 1 Mbyte of address space, the CPU core is capable of
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R8C/38T-A
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06B2D
p9530
0023AH
0025DH
00285H
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R5F21368snfp
Abstract: R5F21368 r5f2136csnfp 0025DH 00285H
Text: Preliminary Datasheet Specifications in this document are tentative and subject to change. R8C/36T-A Group RENESAS MCU 1. R01DS0055EJ0001 Rev.0.01 Jan 28, 2011 Overview 1.1 Features The R8C/36T-A Group single-chip microcontrollers MCUs incorporate the R8C CPU core, which provides
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R8C/36T-A
R01DS0055EJ0001
R8C/36TA
R5F21368snfp
R5F21368
r5f2136csnfp
0025DH
00285H
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Untitled
Abstract: No abstract text available
Text: Datasheet R8C/36T-A Group RENESAS MCU 1. R01DS0055EJ0100 Rev.1.00 Dec 09, 2011 Overview 1.1 Features The R8C/36T-A Group of single-chip microcontrollers MCUs incorporates the R8C CPU core, which provides sophisticated instructions for a high level of efficiency. With 1 Mbyte of address space, the CPU core is capable of
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Philips FA 145
Abstract: TCS230
Text: User’s Manual 16 R8C/36T-A Group User’s Manual: Hardware RENESAS MCU R8C Family / R8C/3xT-A Series All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by
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R01UH0240EJ0100
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TCS230
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BLOCK DIAGRAM OF TOUCH sensor
Abstract: r5f2136cs 002FE R5F21368snfp R5F21368s R01US0007EJ 0025DH 00285H TCS230
Text: User’s Manual 16 R8C/36T-A Group User’s Manual: Hardware RENESAS MCU R8C Family / R8C/3xT-A Series Preliminary All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by
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R8C/36T-A
R01UH0240EJ0010
BLOCK DIAGRAM OF TOUCH sensor
r5f2136cs
002FE
R5F21368snfp
R5F21368s
R01US0007EJ
0025DH
00285H
TCS230
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R5F2156CGJFP
Abstract: 0025DH 00285H 001F6H R5F21568HKFP
Text: Preliminary Datasheet Specifications in this document are tentative and subject to change. R8C/56E Group, R8C/56F Group, R8C/56G Group, R8C/56H Group RENESAS MCU 1. R01DS0042EJ0010 Rev.0.10 Mar 15, 2011 Overview 1.1 Features The R8C/56E Group, R8C/56F Group, R8C/56G Group, R8C/56H Group single-chip microcontrollers MCUs
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0025DH
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001F6H
R5F21568HKFP
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R5F2156CGJFP
Abstract: ISO-11898-1 0025DH 00285H 001F6H
Text: Datasheet R8C/56E Group, R8C/56F Group, R8C/56G Group, R8C/56H Group RENESAS MCU 1. R01DS0042EJ0200 Rev.2.00 Sep 05, 2012 Overview 1.1 Features The R8C/56E Group, R8C/56F Group, R8C/56G Group, R8C/56H Group of single-chip microcontrollers MCUs incorporate the R8C CPU core, which provides sophisticated instructions for a high level of efficiency. With 1
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R8C/56F
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R01DS0042EJ0200
R5F2156CGJFP
ISO-11898-1
0025DH
00285H
001F6H
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Untitled
Abstract: No abstract text available
Text: I l b^E D • APX bb53S31 002b544 1T1 A N AMER PHILIPS/DISCRETE BYD11 SERIES CONTROLLED AVALANCHE RECTIFIER DIODES Glass passivated rectifier diodes in hermetically sealed axial-leaded SOD-91 ID* envelope, intended for general purpose rectifier applications.
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bb53S31
002b544
BYD11
OD-91
BYD11D
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BY709
Abstract: by707 BY708
Text: bTE D • bbS3131 002b5El bT4 ■ APX A BY707 BY708 BY709 _ SILICON E.H.T. SO FT -R EC O V ER Y RECTIFIER DIODES* E .H .T . rectifier diodes in glass envelopes intended for use in high-voltage applications such as the highvoltage supply of television receivers and monitors. The devices feature non-snap-off characteristics.
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bbS3131
002b5El
BY707
ABY708
BY709
BY707
BY708
BY709
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BFQ10
Abstract: No abstract text available
Text: PHILIPS INTERNATIONAL MIE J> WB 711002b 002b51S S Ö P H I N BFQ10 to 16 T -2 7 -2 7 — DUAL N-CHANNEL FETS Dual symmetrical n-channel silicon planar epitaxial junction field-effect transistors in a TO-71 metal envelope, with electrically insulated gates and a common substrate connected to the envelope; intended
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711002b
002b51S
BFQ10
002b22ü
Q02b221
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M2883
Abstract: ALPS 102 BYV34
Text: SSE D N AMER PHILI PS/ DI SCR ET E • bbSBTBl 002B573 3 ■ BYV34 S E R IE S 7 = 0 3 - / ^ ULTRA FAST REC O VER Y DOUBLE RECTIFIER DIO DES Glass-passivated, high-efficiency double rectifier diodes in plastic envelopes, featuring low forward voltage drop, ultra fast reverse recovery times and soft-recovery characteristic.- They are intended for
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002B573
BYV34
bbS3131
T-03-19
M2881
M2882
M2883
ALPS 102
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BYD14
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE bb53T31 002bS52 27fl • APX BYD14 SERIES b^E D L M AINTENANC E TYPE CONTROLLED AVALANCHE RECTIFIER DIODES Glass passivated rectifier diodes in hermetically sealed axial-leaded ID * envelopes and intended fo r general purpose rectifier applications.
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bb53T31
002bS52
BYD14
BYD14D
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Untitled
Abstract: No abstract text available
Text: IDT70V07S/L HIGH-SPEED 3.3V 32K x 8 DUAL-PORT STATIC RAM Integrated Device Technology, Inc. FEATURES: • True Dual-Ported memory cells which allow simulta neous access of the same memory location • High-speed access — Commercial: 25/35/55ns max. • Low-power operation
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IDT70V07S/L
25/35/55ns
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450mW
IDT70V07L
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80-pin
PN80-1)
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BYD34D
Abstract: BYD34J BYD34G BYD34M MCB984 BYD34K c1020 DTL philips
Text: N AMER P H IL IPS/DISCRETE b'lE D • Philips Semiconductors bbSa^l Avalanche fast soft-recovery x. . rectifier diodes DESCRIPTION Glass passivated rectifier diodes in hermetically sealed axial-leaded ID implosion diode glass envelopes. They are intended for television and
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bbS3T31
BYD34
BYD34D
BYD34J
BYD34G
BYD34M
MCB984
BYD34K
c1020
DTL philips
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Untitled
Abstract: No abstract text available
Text: Advance Data Sheet January 1997 microelectronics group Lucent Technologies Bell Labs Innovations LC020 Single-Output Series Power Module: 18 Vdc to 36 Vdc Inputs; 20 W Features • Low profile: 9.9 mm 0.390 in. with standoffs, 9.53 mm (0.375 in.) with standoffs recessed
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LC020
DS96-002EPS
005002b
002b5fib
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Untitled
Abstract: No abstract text available
Text: bitemational ^Rectifier PD - 9.1098B IR F 7106 PRELIMINARY HEXFET Power MOSFET • • • • • • • Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching
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1098B
S5M52
IRF7106
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Untitled
Abstract: No abstract text available
Text: International [^Rectifier PD - 9.1243B IRF7309 PRELIMINARY HEXFET Power MOSFET • Generation V Technology • Ultra Low On-Resistance • Dual N and P Channel Mosfet • Surface Mount • Available in Tape & Reel • Dynamic dv/dt Rating • Fast Switching
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1243B
IRF7309
4fl55M
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96-Seg
Abstract: No abstract text available
Text: KS57C2408 4-BIT CMOS Microcontroller ELECTRONICS Product Specification OVERVIEW The KS57C2408 single-chip CMOS microcontroller is designed for very high performance using Samsung's newest 4-bit product development approach, SAM4 Samsung Arrangeable Microcontrollers . Its main features
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KS57C2408
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80-pin
002b535
71b4142
D0SbS37
96-Seg
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Untitled
Abstract: No abstract text available
Text: t.'lE D • bbSB^l QQ2 bS 4Q SSb H A P X A B Y 722 B Y 723 B Y 724 SILICON VERY FAST EHT SOFT-RECOVERY RECTIFIER DIODES* E H T rectifier diodes in glass envelopes intended for use in high-voltage applications e.g. the high-voltage supply of television receivers and monitors, at frequencies in excess o f 30 kHz. The devices feature non
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BY722
BY723
BY724
7Z24327
02b543
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE b'lE ]> • APX bbS3ci31 DD2bS3Q bD7 bYHD JL BY716 SILICON VERY FAST EHT SOFT-RECOVERY RECTIFIER DIODES EHT rectifier diodes in glass envelopes intended for use in general purpose high-speed high-voltage applications. The devices feature non-snap-off characteristics. Because of the small envelope, the diodes
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BY716
BY715
002b532
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GP001 EPIC
Abstract: No abstract text available
Text: 37E D Ol 4302271 002bSfl7 b IHAS .Radiation-Hardened High-Reliability ICs HARRIS SEfllCOND SECTOR GP517/1RZ Advance Information I3 > High-Reliability, Radiation-Hardened C M O S/SO S interrupt Controller A e ro s p a c e C lass S S c re e n in g Features:
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002bSfl7
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il-Std-1750A
RCA-GP517/1RZ,
GP001 EPIC
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