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    MJ11012 Price and Stock

    Flip Electronics MJ11012G

    TRANS NPN DARL 60V 30A TO204
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    DigiKey MJ11012G Tray 200 200
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    Solid State Inc MJ11012

    TRANS NPN DARL 60V 30A TO3
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    onsemi MJ11012G

    TRANS NPN DARL 60V 30A TO204
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    DigiKey MJ11012G Tray 1
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    Avnet Americas MJ11012G Tray 0 Weeks, 2 Days 164
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    MJ11012G Bulk 14 Weeks, 1 Days 1
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    MJ11012G Tray 11 Weeks 300
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    Mouser Electronics MJ11012G
    • 1 $8.45
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    Quest Components MJ11012G 19
    • 1 $11.85
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    Rochester Electronics MJ11012G 1,341 1
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    TME MJ11012G 1
    • 1 $6.71
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    Flip Electronics MJ11012G 200
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    Rochester Electronics LLC MJ11012G

    POWER BIPOLAR TRANSISTOR, 30A, 6
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    DigiKey MJ11012G Bulk 60
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    onsemi MGSF2N02ELT1G

    MOSFET NFET SOT23 20V 2.8A 85mOhm
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    Mouser Electronics MGSF2N02ELT1G 35,357
    • 1 $0.45
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    Find more MJ11012 price and stock on Findchips.com

    MJ11012 Datasheets (17)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MJ11012 Central Semiconductor Leaded Power Transistor Darlington Original PDF
    MJ11012 Motorola 30 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.120 VOLTS 200 WATTS Original PDF
    MJ11012 On Semiconductor High-Current Complementary Silicon Transistors Original PDF
    MJ11012 Wing Shing Computer Components NPN SILICON DARLINGTON TRANSISTOR(SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS) Original PDF
    MJ11012 Advanced Semiconductor RANSISTOR,BJT,DARLINGTON,NPN,500V V(BR)CEO,50A I(C),TO-204AE Scan PDF
    MJ11012 Mospec POWER TRANSISTORS(30A,60-120V,200W) Scan PDF
    MJ11012 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    MJ11012 Motorola European Master Selection Guide 1986 Scan PDF
    MJ11012 Motorola 30 Amp Darlington Power Transistors Complementary Silicon 60-120 Volts 200 Watts Scan PDF
    MJ11012 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    MJ11012 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    MJ11012 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    MJ11012 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    MJ11012 On Semiconductor Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Bipolar Power, NPN, 30A, 60V, Pkg Style TO204 Scan PDF
    MJ11012 STMicroelectronics Shortform Data Book 1988 Short Form PDF
    MJ11012-D On Semiconductor High-Current Complementary Silicon Transistors Original PDF
    MJ11012G On Semiconductor Bipolar Power T03 NPN 30A 60V Original PDF

    MJ11012 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MJ11015G

    Abstract: MJ11016G mj110156 MJ11016 MJ11015 MJ11012 MJ11012G T172 MJ1101x
    Text: MJ11015 PNP ; MJ11012, MJ11016 (NPN) MJ11016 is a Preferred Device High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain − hFE = 1000 (Min) @ IC − 20 Adc


    Original     		PDF MJ11015 MJ11012, MJ11016 MJ11016 MJ11012 MJ11015/6 MJ11015, MJ11015G MJ11016G mj110156 MJ11015 MJ11012 MJ11012G T172 MJ1101x

    Mj11015

    Abstract: No abstract text available
    Text: MJ11015 PNP ; MJ11012, MJ11016 (NPN) MJ11016 is a Preferred Device High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain − hFE = 1000 (Min) @ IC − 20 Adc


    Original     		PDF MJ11015 MJ11012, MJ11016 MJ11016 MJ11012 MJ11015/6 MJ11012/D Mj11015

    MJ11016

    Abstract: MJ11011 MJ11015 MJ11014 MJ11012 MJ11013 P003N MALAYSIA MJ11015
    Text: MJ11011/13/15 MJ11012/14/16 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS n MJ11013, MJ11014, MJ11015 AND MJ11016 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJ11012, MJ11014 and MJ11016 are silicon epitaxial-base NPN transistors in monolithic


    Original     		PDF MJ11011/13/15 MJ11012/14/16 MJ11013, MJ11014, MJ11015 MJ11016 MJ11012, MJ11014 MJ11016 MJ11011, MJ11011 MJ11012 MJ11013 P003N MALAYSIA MJ11015

    Vcb-60V

    Abstract: MJ11012
    Text: NPN MJ11012 SILICON DARLINGTON TRANSISTOR SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS TO-3 ABSOLUTE MAXIMUM RATINGS Ta=25°C C Characteristic Collector-Base Voltage Collector-Emitter Voltage Collector Current (DC) Collector Dissipation (Tc=25°C)


    Original     		PDF MJ11012 Vcb-60V MJ11012

    MJ11015G

    Abstract: MJ11016G MJ11015 MJ11016 MJ11012 MJ11012G npn darlington transistor pnp 3015
    Text: MJ11015 PNP ; MJ11012, MJ11016 (NPN) MJ11016 is a Preferred Device High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain − hFE = 1000 (Min) @ IC − 20 Adc


    Original     		PDF MJ11015 MJ11012, MJ11016 MJ11016 MJ11012 MJ11015/6 MJ11012/D MJ11015G MJ11016G MJ11015 MJ11012 MJ11012G npn darlington transistor pnp 3015

    Untitled

    Abstract: No abstract text available
    Text: MJ11012 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)30 Absolute Max. Power Diss. (W)200 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0m» @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.200


    Original     		PDF MJ11012

    mj11015

    Abstract: pnp resistor mj11012 transistor MJ11016
    Text: ON Semiconductort PNP High−Current Complementary Silicon Transistors MJ11015 . . . for use as output devices in complementary general purpose amplifier applications. MJ11016 * NPN MJ11012 • High DC Current Gain — hFE = 1000 Min @ IC − 20 Adc • Monolithic Construction with Built−in Base Emitter Shunt Resistor


    Original     		PDF MJ11015 MJ11012 MJ11016 pnp resistor transistor MJ11016

    MJ11015G

    Abstract: MJ11016G MJ11015 mj110156 MJ11012 MJ11012G MJ11016
    Text: MJ11015 PNP ; MJ11012, MJ11016 (NPN) MJ11016 is a Preferred Device High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain − hFE = 1000 (Min) @ IC − 20 Adc


    Original     		PDF MJ11015 MJ11012, MJ11016 MJ11016 MJ11012 MJ11015/6 O-204AA MJ11015G MJ11016G MJ11015 mj110156 MJ11012 MJ11012G

    MJ11015

    Abstract: MJ11012 MJ11016 mj11016 mexico
    Text: ON Semiconductort PNP High-Current Complementary Silicon Transistors MJ11015 . . . for use as output devices in complementary general purpose amplifier applications. MJ11016 * NPN MJ11012 • High DC Current Gain — • • hFE = 1000 Min @ IC – 20 Adc


    Original     		PDF MJ11015 MJ11016 MJ11012 r14525 MJ11012/D MJ11015 MJ11012 MJ11016 mj11016 mexico

    100 amp npn darlington power transistors

    Abstract: mj11015 MJ11016 transistor tl 187 MJ11013 16 amp npn darlington power transistors NPN 200 VOLTS POWER TRANSISTOR npn darlington transistor 150 watts 10 amp npn darlington power transistors MJ11016 data sheet
    Text: MOTOROLA Order this document by MJ11012/D SEMICONDUCTOR TECHNICAL DATA PNP High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ


    Original     		PDF MJ11012 MJ11014 MJ11016 MJ11013 MJ11015 MJ11012/D* MJ11012/D 100 amp npn darlington power transistors mj11015 MJ11016 transistor tl 187 MJ11013 16 amp npn darlington power transistors NPN 200 VOLTS POWER TRANSISTOR npn darlington transistor 150 watts 10 amp npn darlington power transistors MJ11016 data sheet

    MC68B21CP

    Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
    Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References


    Original     		PDF SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    tip122 tip127 audio amp schematic

    Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier
    Text: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001  SCILLC, 2001 Previous Edition  1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.


    Original     		PDF DL111/D July-2001 r14525 tip122 tip127 audio amp schematic mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier

    transistor mosfet buv18a

    Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
    Text: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9


    Original     		PDF

    BUV48I

    Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
    Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable


    Original     		PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046

    mj11011

    Abstract: MJ11012 DARLINGTON 20A
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= 60V(Min.) ·High DC Current Gain: hFE= 1000(Min.)@IC= 20A ·Low Collector Saturation Voltage: VCE (sat)= 3.0V(Max.)@ IC= 20A


    Original     		PDF MJ11011 mj11011 MJ11012 DARLINGTON 20A

    pmd10K80

    Abstract: PMD17K100 MJ-6503 MJ802 EQUIVALENT 2n6545 BDW52 BU208A BUW35 PMD10K40 BDX88
    Text: Power Transistors TO-3 Case TYPE NO. IC PD BVCBO BVCEO hFE V MIN (V) MIN MIN @ IC VCE(SAT) @ IC PNP (A) MAX (W) NPN 2N3055 MJ2955 15 115 100 60 5.0 - 10 10 117 160 140 20 70 3.0 2N3442 (A) MAX (V) MAX fT (A) (MHz) MIN 3.0 10 2.5 5.0 10 - 2N3713 2N3789


    Original     		PDF 2N3055 MJ2955 2N3442 2N3713 2N3789 2N3714 2N3790 2N3715 2N3791 2N3716 pmd10K80 PMD17K100 MJ-6503 MJ802 EQUIVALENT 2n6545 BDW52 BU208A BUW35 PMD10K40 BDX88

    mj11015

    Abstract: MJ11014 MJ11011
    Text: r Z T S G S -T H O M MJ11011/1 3/15 MJ11012/14/16 S O N mlM MiniaMgnigCTfsiMiKe^ COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . MJ11013, MJ11014, MJ11015 AND MJ11016 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJ11012, MJ11014 and MJ11016are silicon


    OCR Scan     		PDF MJ11011/1 MJ11012/14/16 MJ11013, MJ11014, MJ11015 MJ11016 MJ11012, MJ11014 MJ11016are MJ11011, MJ11011

    mj11011

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MJ11012/D SEMICONDUCTOR TECHNICAL DATA PNP M J11013 High-C urrent Com plem entary Silicon Transistors M J11015 NPN M J11012 . . . for use as output devices in complementary general purpose amplifier applica­ tions. • •


    OCR Scan     		PDF MJ11012/D J11013 J11015 J11012 J11014 mj11011

    MJ11011

    Abstract: MJ11014
    Text: MJ11011/13/15 MJ11012/14/16 SGS-THOMSON MGMlLIOTIlMCt COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . MJ11013, MJ11014, MJ11015 AND MJ11016 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJ11012, MJ11014 and MJ11016 are silicon epitaxial-base NPN transistors in monolithic


    OCR Scan     		PDF MJ11011/13/15 MJ11012/14/16 MJ11013, MJ11014, MJ11015 MJ11016 MJ11012, MJ11014 MJ11011, MJ11011

    MJ11015

    Abstract: MJ11016 MJ11014 MJ11012 k 1 transistor npn darlington transistor 200 watts motorola darlington power transistor mj11015 transistor transistor MJ11016 MJll016
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJ11013 High-Current Complementary Silicon Transistors MJ11015 NPN MJ11012 . . . for use as output devices in complementary general purpose amplifier applica­ tions. • High DC Current Gain — hpg = 1000 Min @ Iq - 20 Adc


    OCR Scan     		PDF MJ11013 MJ11015 MJ11012 MJ11014 MJ11016* MJ11015 MJ11016 k 1 transistor npn darlington transistor 200 watts motorola darlington power transistor mj11015 transistor transistor MJ11016 MJll016

    mj11011

    Abstract: MJ11016 MJ11013 MJ11014 MJ11015 MJ11012 Variable resistor 10K ohm transistor MJ11016
    Text: Æà MOS PEC COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS .designed for use as output devices in complementary general purpose amplifier applications. Collector-Emitter Voltage ^C EO COIIector-Base Voltage V C BO Emitter-Base Voltage 30 AMPERE COMPLEMENTARY


    OCR Scan     		PDF MJ11011 MJ11012 MJ11013 MJ11014 MJ11015 MJ11016 MJ11014 MJ11016 MJ11012 Variable resistor 10K ohm transistor MJ11016

    transistor buv18a

    Abstract: motorola transistor cross reference BUV18A BUX98A motorola N6030 BUT13 transistor buv10 MPSU06 transistor MJ12005 MOTOROLA MJ15021 "cross reference"
    Text: STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR COLLECTOR CONNECTED TO TAB Resistive Switching IcCont Amps Max VcEO sus) Volts Min 0.5 300 MPSU10 0.8 40 MPSU02 1 120 2 Device Type *s US Max tf US Max fT MHz Min P q (Case) Watts hFE Min/Max @ lc Amp MPSU60 30 min


    OCR Scan     		PDF MPSU10 MPSU02 MPSU03 MPSU04 MPSU01 MPSU01A MPSU45# MPSU60 MPSU52 MPSU51 transistor buv18a motorola transistor cross reference BUV18A BUX98A motorola N6030 BUT13 transistor buv10 MPSU06 transistor MJ12005 MOTOROLA MJ15021 "cross reference"

    triac zd 607

    Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
    Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.


    OCR Scan     		PDF SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845