Mitsubishi
Abstract: MGFC38V6472
Text: MITSUBISHI ELECTRIC MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC38V6472 6.4 ~ 7.2GHz BAND 6W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC
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MGFC38V6472
Mitsubishi
MGFC38V6472
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MGFC38V5867
Abstract: No abstract text available
Text: June/2004 June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC38V5867 5.8 ~ 6.75GHz BAND 6W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC June/2004
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June/2004
MGFC38V5867
75GHz
MGFC38V5867
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Untitled
Abstract: No abstract text available
Text: < C band internally matched power GaAs FET > MGFC38V5964 5.9 – 6.4 GHz BAND / 6W DESCRIPTION OUTLINE DRAWING The MGFC38V5964 is an internally impedance-matched GaAs power FET especially designed for use in 5.9 – 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFC38V5964
MGFC38V5964
-45dBc
27dBm
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Untitled
Abstract: No abstract text available
Text: < C band internally matched power GaAs FET > MGFC38V6472 6.4 – 7.2 GHz BAND / 6W DESCRIPTION OUTLINE DRAWING The MGFC38V6472 is an internally impedance-matched GaAs power FET especially designed for use in 6.4 – 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFC38V6472
MGFC38V6472
-45dBc
27dBm
10ctric
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Untitled
Abstract: No abstract text available
Text: < C band internally matched power GaAs FET > MGFC38V5867 5.8 – 6.75 GHz BAND / 6W DESCRIPTION OUTLINE DRAWING The MGFC38V5867 is an internally impedance-matched GaAs power FET especially designed for use in 5.8 – 6.75 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFC38V5867
MGFC38V5867
75GHz
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mitsubishi
Abstract: MGFC38V MGFC38V5964
Text: MITSUBISHI ELECTRIC MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC38V5964 5.9 ~ 6.4GHz BAND 6W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC
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MGFC38V5964
mitsubishi
MGFC38V
MGFC38V5964
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Untitled
Abstract: No abstract text available
Text: < C band internally matched power GaAs FET > MGFC38V5867 5.8 – 6.75 GHz BAND / 6W DESCRIPTION OUTLINE DRAWING The MGFC38V5867 is an internally impedance-matched GaAs power FET especially designed for use in 5.8 – 6.75 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFC38V5867
MGFC38V5867
75GHz
100ohm
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Untitled
Abstract: No abstract text available
Text: < C band internally matched power GaAs FET > MGFC38V5964 5.9 – 6.4 GHz BAND / 6W DESCRIPTION OUTLINE DRAWING The MGFC38V5964 is an internally impedance-matched GaAs power FET especially designed for use in 5.9 – 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFC38V5964
MGFC38V5964
-45dBc
27dBm
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Untitled
Abstract: No abstract text available
Text: < C band internally matched power GaAs FET > MGFC38V6472 6.4 – 7.2 GHz BAND / 6W DESCRIPTION OUTLINE DRAWING The MGFC38V6472 is an internally impedance-matched GaAs power FET especially designed for use in 6.4 – 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFC38V6472
MGFC38V6472
-45dBc
27dBm
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C42V5964
Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION
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M6STA-005VA/WA/SA
MF-156STA-006VA/WA/SA
MF-156SRA-002VA/WA/SA
MF-622STA-004VA/WA/SA
MF-622STA-005VA/WA/SA
MF-622STA-006VA/WA/SA
MF-622SRA-002VA/WA/SA
MF-2500STA-002VA/WA,
003VA/WA,
004VA/WA
C42V5964
MGF1302 TRANSISTOR
MGF1601
MGFC1402
M57721
M67760LC
H2 MARKING SOT-89 mmIC
2SC5125
MITSUBISHI M57710-A
M68776
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s18a
Abstract: MGFC38V5867 675g
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC38V5867 5.8~6.75GHz BAND 6W INTERNALLY MATCHED GaAs FET D E S C R IP TIO N The MGFC38V5867 device is an internally impedance-matched GaAs power FET especially designed for use in 5.8 ~ 6.75GHz band amplifiers. The hermetically sealed metal-ceramic package
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MGFC38V5867
75GHz
MGFC38V5867
38dBm
25deg
s18a
675g
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MGFC38V3642
Abstract: MGFC38V
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC38V3642 PBEUN"nARY 3.6~4.2GHz BAND 6W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 3 8 V 3 6 4 2 is an internally im pedance-m atched GaAs power FET especially designed fo r use in 3 .6 — 4 .2 GHz band amplifiers. The herm etically sealed metal-ceramic
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MGFC38V3642
MGFC38V3642
MGFC38V
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mgfc30
Abstract: MGFC39V5964A
Text: C BAND INTERNALLY MATCHED GaAs FET M GFCxxVxxxxx Series Typical Characteristics Type Freq. GHz PldB (dBm) GIp mi MGFC36V3742 3 .7 -4 .2 IMG FC36V3742A M GFC36V4460 MGFC36V4460A MGFC38VS258 MGFC36V6964 M G FC36V6964A MGFC36V6471 3 .7 -4 .2 ii 4 .4 -5 .0 10
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MGFC36V3742
FC36V3742A
GFC36V4460
MGFC36V4460A
MGFC38VS258
MGFC36V6964
mgfc30
MGFC39V5964A
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Untitled
Abstract: No abstract text available
Text: b 2 4 clû 2 cî 0 0 1 7 ^ 0 MITSUBISHI SEMICONDUCTOR <GaAs FET> 477 MGFC38V3642 ool 8 • >h,s . . . limi« » 3 .6 ~ 4 .2 G H z BAND 6W INTERNALLY MATCHED GaAs FET DESCRIPTION Th e M G F C 3 8 V 3 6 4 2 is an internally im p edance-m atched G aA s power F E T especially designed for use in 3 . 6 —4 .2
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MGFC38V3642
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pj 59
Abstract: MGFC38V5964
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC38V5964 5 .9 — 6 .4 G H z BAN D 6 W IN TE R N A L L Y M A TC H E D GaAs F E T DESCRIPTION The M G F C 3 8 V 5 9 6 4 is an in te rna lly im p e d a n ce -m a tch e d GaAs power FET especially designed fo r use in 5 . 9 — 6 .4
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MGFC38V5964
MGFC38V5964
ltem-01:
ltem-51INPUT
pj 59
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MGF2430A
Abstract: MGF4714AP MGF4914D MGF4919 MGF1402B MGF2430 MGF1923 7.1 power amplifier circuit diagram block diagram of power factor meter mgf2445
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> APPLICATION NOTE RECOMMENDED LINE-UP FOR LOW NOISE DEVICES APPLICATION NOTE 1. Recommended Line-Up 1.1 Line-up for 12G Hz Band Converter W G - M IC CO NVERTER RF AM P 1ST STAGE M IX E R 2N D S T A G E IF A M P 3R D S T A G E
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12GHz
MGF4919E
MGF4914E
MGF49T4D
MGF4714AP
MGF4914D
MGF1923
MGF1902B
MGF2430A
MGF4919
MGF1402B
MGF2430
7.1 power amplifier circuit diagram
block diagram of power factor meter
mgf2445
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MGF4919G
Abstract: MGF4919 mgf1903b MGF0907B 14512H mgf4316g MGFC45V2527 MGF1923 MGFC38V3642 MGF0904A
Text: lid GaAs FETs •GaAs FET SERIES FOR MICROWAVE-BAND LOW-NOISE AMPLIFIERS <Ta = 25-c> PT If f -6 mA ¡¡m i 100 360 < (GHe) ' (mA) f t 3 10 NFmin max (dB) Qs min (dB! 11 4 1.4 4 1.0 12 2.0 i I MGF1302 Vf l P -6 -6 -6 80 240 3 10 MGF1323 -6 -6 80 240 3 10
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MGF1302
MGF1303B
MGF1323
MGF14
MGF1412B
MGF1403B
MGF1423B
MGF1425B
MGF1902B
MGF1903B
MGF4919G
MGF4919
MGF0907B
14512H
mgf4316g
MGFC45V2527
MGF1923
MGFC38V3642
MGF0904A
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7785A
Abstract: FC36V
Text: S/C BAND INTERNALLY MATCHED GaAs FET MGFSxxVxxxx MGFCxxVxxxxx Series T y p ic a l C ha ra cte ris tics -Kreq. Type M Q F S 4 4 V 2 5 2 7 * M G F S 45V 2527 «+ M G FC36V 3742A * * M GFC36V52S8 M G FC36V59M A* * M G FC 36V 6472A * * M G FC 36V 7177A * M G FC36V 7785A * *
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FC36V
GFC38V3M
FC38V
GFC39V
MGFC38V44SQA
GFC39V80B3
GFC39V92B8
FC39V
i742A
7785A
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3642G
Abstract: No abstract text available
Text: •GaAs FET SERIES FOR MICROWAVE-BAND MEDIUM AND HIGH POWER AMPLIFIERS CONTINUED , \Ta =25 C ) , Max. ratings Bias conditions frequancy Type No. HIGH F R E Q J E N C ' DEVICES vs r M GFC44V4450* « MGFC36V5258 MGFC39V5258 & MGFC40V5258 X. MGFC42V5258 MGFC36V5964A m
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