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    MGFC36V3742 Price and Stock

    Mitsubishi Electric MGFC36V3742A-56

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    Bristol Electronics MGFC36V3742A-56 10
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    Mitsubishi Electric MGFC36V3742A

    MESFET Transistor, N-CHAN, RFMOD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components MGFC36V3742A 21
    • 1 $300
    • 10 $260
    • 100 $240
    • 1000 $240
    • 10000 $240
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    MGFC36V3742 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MGFC36V3742 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    MGFC36V3742 Unknown FET Data Book Scan PDF
    MGFC36V3742A Mitsubishi 3.7 ~ 4.2GHz BAND 4W INTERNALLY MATCHED GaAs FET Original PDF
    MGFC36V3742A Mitsubishi 3.7-4.2 GHz BAND 4W INTERNALLY MATCHED GaAs FET Scan PDF

    MGFC36V3742 Datasheets Context Search

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    MGFC36V3742A

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC36V3742A 3.7 – 4.2 GHz BAND / 4W DESCRIPTION OUTLINE DRAWING The MGFC36V3742A is an internally impedance-matched GaAs power FET especially designed for use in 3.7 – 4.2 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFC36V3742A MGFC36V3742A -45dBc 25dBm

    MGFC36V3742A

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC36V3742A 3.7 ~ 4.2GHz BAND 4W INTERNALLY MATCHED GaAs FET . DESCRIPTION The MGFC36V3742A is an internally impedance-matched GaAs power FET especially designed for use in 3.7 ~ 4.2 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original     		PDF MGFC36V3742A MGFC36V3742A 25dBm 10MHz June/2004

    MGFC36V3742A

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC36V3742A 3.7 ~ 4.2GHz BAND 4W INTERNALLY MATCHED GaAs FET . DESCRIPTION The MGFC36V3742A is an internally impedance-matched GaAs power FET especially designed for use in 3.7 ~ 4.2 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original     		PDF MGFC36V3742A MGFC36V3742A 25dBm 10MHz

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC36V3742A 3.7 – 4.2 GHz BAND / 4W DESCRIPTION OUTLINE DRAWING The MGFC36V3742A is an internally impedance-matched GaAs power FET especially designed for use in 3.7 – 4.2 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFC36V3742A MGFC36V3742A -45dBc 25dBm

    C42V5964

    Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
    Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION


    Original     		PDF M6STA-005VA/WA/SA MF-156STA-006VA/WA/SA MF-156SRA-002VA/WA/SA MF-622STA-004VA/WA/SA MF-622STA-005VA/WA/SA MF-622STA-006VA/WA/SA MF-622SRA-002VA/WA/SA MF-2500STA-002VA/WA, 003VA/WA, 004VA/WA C42V5964 MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776

    FET TH 469

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR GaAs FET M G FC36V3742A ai ThrS i>ä art S~b' 3.7~4.2GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC36V3742A is an internally impedance-matched Unit : millimeters (inches) GaAs power FET especially designed for use in 3.7~4.2GHz


    OCR Scan     		PDF FC36V3742A MGFC36V3742A 45d8c FET TH 469

    mgfc30

    Abstract: MGFC39V5964A
    Text: C BAND INTERNALLY MATCHED GaAs FET M GFCxxVxxxxx Series Typical Characteristics Type Freq. GHz PldB (dBm) GIp mi MGFC36V3742 3 .7 -4 .2 IMG FC36V3742A M GFC36V4460 MGFC36V4460A MGFC38VS258 MGFC36V6964 M G FC36V6964A MGFC36V6471 3 .7 -4 .2 ii 4 .4 -5 .0 10


    OCR Scan     		PDF MGFC36V3742 FC36V3742A GFC36V4460 MGFC36V4460A MGFC38VS258 MGFC36V6964 mgfc30 MGFC39V5964A

    ST3028

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAsFET> p f c t U MGFC36V3742A a f,oa', îP?C , aK: sU'ti\*C’ T N0ttae' nnHs«to Soi^e ? 3.7~4.2GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC36V3742A is an internally Unit : millimeters inches OUTLINE DRAWING impedance-matched


    OCR Scan     		PDF MGFC36V3742A MGFC36V3742A 101VIHz ST3028

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET MG FC36V3742A P R 0 -* 3.7-4.2G HZ BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC36V3742A is an internally impedance-matched GaAs power FET especially designed for use in 3.7—4.2GHz band amplifiers. The hermetically


    OCR Scan     		PDF FC36V3742A MGFC36V3742A

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 36V 3742 o r p>o<*u c t' ° " Pd '» n lS c o n t v nn u e 3 .7 ' 4.2G H z BAND 4 W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC36V3742 is an internally impedance-matched GaAs power FET especially designed for use In 3.7 ~ 4.2


    OCR Scan     		PDF MGFC36V3742 ltem-01: Item-51 27C102P, RV-15

    MGFC36V3742A

    Abstract: 42GH 12api
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET MGFC36V3742A pRÔrîî oot^St«SS^,;Cha"9e' 'C-3^' .u îir t C 3.7~4.2GHz BAND 4W INTERNALLY MATCHED GaAs FET D ESC RIPTIO N O U TLIN E DRAW IN G The MGFC36V3742A is an internally impedance-matched U n it : m illim eters inch e s)


    OCR Scan     		PDF FC36V3742A MGFC36V3742A 45dBc ltem-01 ltem-54 42GH 12api

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <,GaAs FET MGFC36V3742A 3.7~4.2GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G FC 36V3742A is an internally impedance-matched GaAs power FET especially designed fo r use in 3.7~ 4.2G H z band am plifiers. The hermetically


    OCR Scan     		PDF MGFC36V3742A 36V3742A Item-01

    MGF4919G

    Abstract: MGF4919 mgf1903b MGF0907B 14512H mgf4316g MGFC45V2527 MGF1923 MGFC38V3642 MGF0904A
    Text: lid GaAs FETs •GaAs FET SERIES FOR MICROWAVE-BAND LOW-NOISE AMPLIFIERS <Ta = 25-c> PT If f -6 mA ¡¡m i 100 360 < (GHe) ' (mA) f t 3 10 NFmin max (dB) Qs min (dB! 11 4 1.4 4 1.0 12 2.0 i I MGF1302 Vf l P -6 -6 -6 80 240 3 10 MGF1323 -6 -6 80 240 3 10


    OCR Scan     		PDF MGF1302 MGF1303B MGF1323 MGF14 MGF1412B MGF1403B MGF1423B MGF1425B MGF1902B MGF1903B MGF4919G MGF4919 MGF0907B 14512H mgf4316g MGFC45V2527 MGF1923 MGFC38V3642 MGF0904A

    MGF4404A

    Abstract: MGF4302A MGF2430 MGF4304A MGF4403A 12GHz MGF4301A MGF4402A MGF4401A MGFK25M4045
    Text: - 154 - m f m « € m & m it V K V tè 5e X % I* V* E ft * (V) * * P d /P c h r} # (A) (W) GaAs N D -15 GDO -15 0 900m D MW PA GaAs N D -15 GDO -15 0 900m D 5 MGF2445 MW PA GaAs N D -15 GDO -15 0 1.4 D 10 MGF4301A MW LN A GaAs N D -4 GDO -4 0 60m D


    OCR Scan     		PDF MGF2430 MGF2430A MGF2445 MGF4301A MGF4302A MGF4303A MGF4304A MGFC36V6471 MGFC36V7177 MGFC36V7785 MGF4404A MGF4403A 12GHz MGF4402A MGF4401A MGFK25M4045