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    MITSUBISHI Price and Stock

    BBM Battery MITSUBISHI-Q-BATTERY

    BATT MITSUBISHI 3.6V
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    DigiKey MITSUBISHI-Q-BATTERY Ammo Pack 1
    • 1 $16.95
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    BBM Battery MITSUBISHI-ANS-BATTERY

    BATT MITSUBISHI 3.6V
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    DigiKey MITSUBISHI-ANS-BATTERY Ammo Pack 1
    • 1 $16.95
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    SMC Corporation of America IDF-S1342(MITSUBISHI)

    IDF SERIES PARTS & ACCESSORIES: Breaker for option R, iIDF55E-30 | SMC Corporation IDF-S1342(MITSUBISHI)
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    RS IDF-S1342(MITSUBISHI) Bulk 5 Weeks 1
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    Middle Atlantic Products RSH-4A-MITSUBISHI-HSU776

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    Onlinecomponents.com RSH-4A-MITSUBISHI-HSU776
    • 1 $112.81
    • 10 $99.3
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    Panasonic Electronic Components EYG-S0612ZLWF

    Thermal Interface Products Soft PGS - IGBT Mod Mitsubishi Elec.
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    TTI EYG-S0612ZLWF Bulk 90 30
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    MITSUBISHI Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    0202KSS Mitsubishi FREQUENCT INVERTER Original PDF
    1951A Mitsubishi Medium Power Microwave MESFET Original PDF
    21265-P/AP Mitsubishi AC100V~200V three-phase inverter drive for small power motor control. Original PDF
    28P2C-A Mitsubishi Plastic 28pin 8 5 13.4mm TSOP Original PDF
    28P2C-B Mitsubishi Plastic 28pin 8 5 13.4mm TSOP Original PDF
    28P2W-C Mitsubishi Plastic 28pin 450mil SOP Original PDF
    28P4 Mitsubishi Plastic 28pin 600mil DIP Original PDF
    2SA1364 Mitsubishi PNP Transistor Scan PDF
    2SA1365 Mitsubishi TRANS GP BJT PNP 20V 0.7A 3TO-236 Original PDF
    2SA1365AE Mitsubishi TRANS GP BJT PNP 20V 0.7A 3TO-236 Original PDF
    2SA1365AF Mitsubishi TRANS GP BJT PNP 20V 0.7A 3TO-236 Original PDF
    2SA1365AG Mitsubishi TRANS GP BJT PNP 20V 0.7A 3TO-236 Original PDF
    2SA1602A Mitsubishi TRANS GP BJT PNP 50V 0.2A 3SC-70 Original PDF
    2SA1602AE Mitsubishi TRANS GP BJT PNP 50V 0.2A 3SC-70 Original PDF
    2SA1602AF Mitsubishi TRANS GP BJT PNP 50V 0.2A 3SC-70 Original PDF
    2SB524 Mitsubishi PNP Transistor Scan PDF
    2SB529 Mitsubishi PNP Transistor Scan PDF
    2SC11968A Mitsubishi NPN EPITAIAL PLANAR TYPE Scan PDF
    2SC1324 Mitsubishi MITSUBISHI RF POWER TRANSISTOR Scan PDF
    2SC1324 Mitsubishi NPN EPITAXIAL PLANAR TYPE Scan PDF
    ...

    MITSUBISHI Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    CM100MX

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM100MX-12A HIGH POWER SWITCHING USE CM100MX-12A ¡IC . 100A ¡VCES . 600V ¡CIB 3-phase Converter + 3-phase Inverter + Brake


    Original     		CM100MX-12A CM100MX PDF

    Vn36

    Abstract: CM100RX-24A
    Text: MITSUBISHI IGBT MODULES CM100RX-24A HIGH POWER SWITCHING USE CM100RX-24A ¡IC . 100A ¡VCES . 1200V ¡7pack 3-phase Inverter + Brake


    Original     		CM100RX-24A 48K/W Vn36 CM100RX-24A PDF

    MGFX36V0717

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFX36V0717 10.7 ~ 11.7GHz BAND 4W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC


    Original     		MGFX36V0717 MGFX36V0717 PDF

    CM100TL-12NF

    Abstract: B8P-VH
    Text: MITSUBISHI IGBT MODULES CM100TL-12NF HIGH POWER SWITCHING USE CM100TL-12NF ¡IC . 100A ¡VCES . 600V ¡Insulated Type ¡6-elements in a pack


    Original     		CM100TL-12NF CM100TL-12NF B8P-VH PDF

    CM900DU-24NF

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM900DU-24NF HIGH POWER SWITCHING USE CM900DU-24NF ● IC . 900A ● VCES . 1200V ● Insulated Type ● 2-elements in a pack


    Original     		CM900DU-24NF CM900DU-24NF PDF

    2SK2973

    Abstract: hd 9729 75458 151821 45980 marking 668 transistor t 2190 transistor marking 551 sot-89 marking c7 sot-89 12089
    Text: MITSUBISHI RF POWER MOS FET 2SK2973 DESCRIPTION 2SK2973 is a MOS FET type transistor specifically designed for OUTLINE DRAWING Dimensions in mm 4.6MAX VHF/UHF power amplifiers applications. 1.5±0.1 1.6±0.2 FEATURES • High power gain:Gpe≥13dB @VDD=9.6V,f=450MHz,Pin=17dBm


    Original     		2SK2973 2SK2973 Gpe13dB 450MHz 17dBm OT-89 48MAX OT-89 hd 9729 75458 151821 45980 marking 668 transistor t 2190 transistor marking 551 sot-89 marking c7 sot-89 12089 PDF

    TH-34

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM400HX-24A HIGH POWER SWITCHING USE CM400HX-24A ¡IC . 400A ¡VCES . 1200V ¡Single ¡Flatbase Type / Insulated Package /


    Original     		CM400HX-24A 051K/W 093K/W TH-34 PDF

    019K

    Abstract: CM400DY-12NF
    Text: MITSUBISHI IGBT MODULES CM400DY-12NF HIGH POWER SWITCHING USE CM400DY-12NF ¡IC . 400A ¡VCES . 600V ¡Insulated Type ¡2-elements in a pack


    Original     		CM400DY-12NF 11K/W 19K/W 019K CM400DY-12NF PDF

    CM300DU-24F

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM300DU-24F HIGH POWER SWITCHING USE CM300DU-24F ● IC . 300A ● VCES . 1200V ● Insulated Type ● 2-elements in a pack


    Original     		CM300DU-24F 13K/W 18K/W CM300DU-24F PDF

    CM600HX-24A

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM600HX-24A HIGH POWER SWITCHING USE CM600HX-24A ¡IC . 600A ¡VCES . 1200V ¡Single ¡Flatbase Type / Insulated Package /


    Original     		CM600HX-24A 033K/W 048K/W CM600HX-24A PDF

    CM300DY-34A

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM300DY-34A HIGH POWER SWITCHING USE CM300DY-34A ¡IC . 300A ¡VCES . 1700V ¡Insulated Type ¡2-elements in a pack


    Original     		CM300DY-34A 200GE 043K/W CM300DY-34A PDF

    ra01l8693ma

    Abstract: RF MOSFET MODULE ra MITSUBISHI marking example
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA01L8693MA RoHS Compliance , 865-928MHz 1.4W 3.3V, 2 Stage Amp. For RFID READER / WRITER DESCRIPTION The RA01L8693MA is a 1.4-watt RF MOSFET Amplifier Module. The battery can be connected directly to the drain of the


    Original     		RA01L8693MA 865-928MHz RA01L8693MA RF MOSFET MODULE ra MITSUBISHI marking example PDF

    CM200DY-24NF

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM200DY-24NF HIGH POWER SWITCHING USE CM200DY-24NF ¡IC . 200A ¡VCES . 1200V ¡Insulated Type ¡2-elements in a pack


    Original     		CM200DY-24NF 11K/W 19K/W CM200DY-24NF PDF

    CM600DY-24A

    Abstract: snubber resistance of IGBT
    Text: MITSUBISHI IGBT MODULES CM600DY-24A HIGH POWER SWITCHING USE CM600DY-24A ¡IC . 600A ¡VCES . 1200V ¡Insulated Type ¡2-elements in a pack


    Original     		CM600DY-24A CM600DY-24A snubber resistance of IGBT PDF

    CM75DY-34A

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM75DY-34A HIGH POWER SWITCHING USE CM75DY-34A ¡IC . 75A ¡VCES . 1700V ¡Insulated Type ¡2-elements in a pack


    Original     		CM75DY-34A 16K/W CM75DY-34A PDF

    ra33h1516m1

    Abstract: RA33H1516M1-101 RF MODULE CIRCUIT DIAGRAM trichloroethylene
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA33H1516M1 RoHS Compliance , 154-162MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA33H1516M1 is a 33watt RF MOSFET Amplifier Module for 12.5volt mobile radios that operate in the 154- to


    Original     		RA33H1516M1 154-162MHz RA33H1516M1 33watt 162MHz RA33H1516M1-101 RF MODULE CIRCUIT DIAGRAM trichloroethylene PDF

    GD-30

    Abstract: InGaAs HEMT mitsubishi
    Text: May/2008 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4934AM/BM SUPER LOW NOISE InGaAs HEMT 4pin flat lead package DESCRIPTION Outline Drawing The MGF4934BM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers.


    Original     		May/2008 MGF4934AM/BM MGF4934BM 12GHz GD-30 InGaAs HEMT mitsubishi PDF

    CM200DX-24A

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM200DX-24A HIGH POWER SWITCHING USE CM200DX-24A ¡IC . 200A ¡VCES . 1200V ¡Dual ¡Flatbase Type / Insulated Package /


    Original     		CM200DX-24A 10K/W 19K/W CM200DX-24A PDF

    transistor 9527

    Abstract: 9544 transistor transistor 9529 RF MOSFET MODULE ra RA Series 9522 transistor transistor 1w 9533 RA01L8693MA 9542 mitsubishi rfid reader module circuit diagrams
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA01L9595M RoHS Compliance , 952-954MHz 1.4W 3.3V, 2 Stage Amp. For RFID READER / WRITER DESCRIPTION The RA01L9595M is a 1.4-watt RF MOSFET Amplifier Module. The battery can be connected directly to the drain of the


    Original     		RA01L9595M 952-954MHz RA01L9595M transistor 9527 9544 transistor transistor 9529 RF MOSFET MODULE ra RA Series 9522 transistor transistor 1w 9533 RA01L8693MA 9542 mitsubishi rfid reader module circuit diagrams PDF

    l g washing machine circuit diagram

    Abstract: M81709FP 16P2N H- bridge mosfet circuit
    Text: MITSUBISHI SEMICONDUCTORS <HVIC> M81709FP HIGH VOLTAGE HALF BRIDGE DRIVER DESCRIPTION M81709FP is high voltage Power MOSFET and IGBT module driver for half bridge applications. PIN CONFIGURATION TOP VIEW FEATURES ¡FLOATING SUPPLY VOLTAGE . 600V


    Original     		M81709FP M81709FP OP-16 16P2N-A 16pin 300mil OP16-P-300-1 l g washing machine circuit diagram 16P2N H- bridge mosfet circuit PDF

    controler

    Abstract: CM600DU-24F
    Text: MITSUBISHI IGBT MODULES CM600DU-24F HIGH POWER SWITCHING USE CM600DU-24F ● IC . 600A ● VCES . 1200V ● Insulated Type ● 2-elements in a pack


    Original     		CM600DU-24F 081K/W 11K/W controler CM600DU-24F PDF

    GD-30

    Abstract: MGF4931AM 77153
    Text: May/2007 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4931AM SUPER LOW NOISE InGaAs HEMT 4pin flat lead package DESCRIPTION Outline Drawing The MGF4931AM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost


    Original     		May/2007 MGF4931AM MGF4931AM 12GHz GD-30 77153 PDF

    RA55H4452M

    Abstract: No abstract text available
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA55H4452M RoHS Compliance , 440-520MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA55H4452M is a 55-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to


    Original     		RA55H4452M 440-520MHz RA55H4452M 55-watt 520-MHz PDF

    MGF1402B

    Abstract: MGF1402
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1402B LOW NOISE GaAs FET MITSUBISHI ELECTRIC


    Original     		MGF1402B MGF1402B MGF1402 PDF