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    MGF1801 Search Results

    MGF1801 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MGF1801 Mitsubishi MICROWAVE POWER GaAs FET Original PDF
    MGF1801 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    MGF1801 Unknown FET Data Book Scan PDF
    MGF1801B Mitsubishi Microwave Power GaAs FET Original PDF
    MGF1801B Mitsubishi MICROWAVE POWER GaAs FET Original PDF
    MGF1801BT Mitsubishi TRANS JFET N-CH 6V 250MA 3GD-24 Original PDF
    MGF1801BT Mitsubishi TAPE CARRIER MICROWAVE POWER GaAs FET Scan PDF
    MGF1801BT Mitsubishi TAPE CARRIER MICROWAVE POWER GaAs FET Scan PDF

    MGF1801 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MGF1801

    Abstract: No abstract text available
    Text: < High-power GaAs FET small signal gain stage > MGF1801B S to X BAND / 0.2W non - matched DESCRIPTION The MGF1801B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package assures


    Original     		PDF MGF1801B MGF1801B, 23dBm 100mA MGF1801

    MGF1801BT

    Abstract: No abstract text available
    Text: < High-power GaAs FET small signal gain stage > MGF1801BT S to X BAND / 0.2W non - matched DESCRIPTION The MGF1801BT, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package assures


    Original     		PDF MGF1801BT MGF1801BT, MGF1801BT 23dBm 100mA

    MGF1801BT

    Abstract: MGF1801B
    Text: June/2004 June/2004 June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1801BT TAPE CARRIER MICROWAVE POWER GaAs FET MITSUBISHI ELECTRIC June/2004


    Original     		PDF June/2004 MGF1801BT MGF1801BT MGF1801B

    MGF1801B

    Abstract: Microwave power GaAs
    Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGF1801B MICROWAVE POWER GaAs FET DESCRIPTION The MGF1801B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic Unit:millimeters


    Original     		PDF MGF1801B MGF1801B, 23dBm MGF1801B Microwave power GaAs

    k 1413 FET

    Abstract: mitsubishi microwave MGF1801B MGF1801 MGF1
    Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGF1801B MICROWAVE POWER GaAs FET DESCRIPTION The MGF1801B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic Unit:millimeters


    Original     		PDF MGF1801B MGF1801B, 23dBm June/2004 k 1413 FET mitsubishi microwave MGF1801B MGF1801 MGF1

    MGF4919G

    Abstract: SP*02N60 SPP11N80 to-220 smd MGF1601 SPW47N60 MGF0905A SPW11N80 SPP11N60 SPP20N60
    Text: МИКРОСХЕМЫ ТРАНЗИСТОРЫ 1 2 ВЫСОКОВОЛЬТНЫЕ ПОЛЕВЫЕ ТРАНЗИСТОРЫ CoolMOS CoolMOS полевые транзисторы Infineon – это новое поколение высоковольтных силовых транзисторов со сверхнизким сопротивлением в открытом состоянии


    Original     		PDF SPP02N60 SPP03N60 SPP04N60 SPP07N60 SPP11N60 SPP20N60 SPW11N60 SPW20N60 SPW47N60 SPP02N80 MGF4919G SP*02N60 SPP11N80 to-220 smd MGF1601 SPW47N60 MGF0905A SPW11N80 SPP11N60 SPP20N60

    2SC3355 SPICE MODEL

    Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
    Text: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness


    Original     		PDF F2002: F2003: F2004: 2SC3355 SPICE MODEL transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101

    C42V5964

    Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
    Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION


    Original     		PDF M6STA-005VA/WA/SA MF-156STA-006VA/WA/SA MF-156SRA-002VA/WA/SA MF-622STA-004VA/WA/SA MF-622STA-005VA/WA/SA MF-622STA-006VA/WA/SA MF-622SRA-002VA/WA/SA MF-2500STA-002VA/WA, 003VA/WA, 004VA/WA C42V5964 MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776

    gaas fet marking B

    Abstract: gaas fet micro-X Package marking gaas fet marking a marking K gaas fet MGF1961A gaas fet micro-X Package gaas fet marking J MGF1964A MGF1963A Micro-X marking "K"
    Text: Marking manner of MITSUBISHI GaAs FET QL-1104E-A July/2008 [Leadless ceramic package] GD-26, 27 Terminal position (from Top View) Top View ① ② B 0 1AL B 0 1AL Electrodes direction: ① Gate ② Source ③ Drain ② ③ ① ② ③ Drain Gate Source


    Original     		PDF QL-1104E-A July/2008) GD-26, MGF4951A/52A MGF4953A/54A MGF1951A MGF1952A MGF1953A MGF1954A MGF4851A gaas fet marking B gaas fet micro-X Package marking gaas fet marking a marking K gaas fet MGF1961A gaas fet micro-X Package gaas fet marking J MGF1964A MGF1963A Micro-X marking "K"

    MGF1801B

    Abstract: MGF1801
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1801B f i MICROWAVE POWER GaAs FET DESCRIPTION OUTLINE DRAWING The M G F 1 8 0 1 B , m ed iu m -p o w e r GaAs FET w ith an Nchannel S ch o ttky gate, is designed fo r use in S to X band U n it 4M IN . m illi m e t e r s liu c h e s i


    OCR Scan     		PDF MGF1801B MGF1801B MGF1801

    MGF1801B

    Abstract: No abstract text available
    Text: HIGH POWER Ga As FET M G F 1601B /1801 B /09xxx/24xxx Series Typical Characteristics Type MGF1801B MQF0904A . MGF090SA . IWIQF0908B M8F0M78 MGFQ909A * * MGFOStOA * M F0911A * «IOF2407À MGF241BA MQF243QA ★ ★ : Under development a s> 21.8 23.0 28.0


    OCR Scan     		PDF 1601B /09xxx/24xxx MGF1801B MQF0904A MGF090SA IWIQF0908B M8F0M78 MGFQ909A F0911A IOF2407À

    E 212 fet

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1801B MICROWAVE POWER GaAs FET DESCRIPTION The M G F 1 8 0 1 B , medium-power GaAs FET with an Nchannel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package assures minimum parasitic losses, and


    OCR Scan     		PDF MGF1801B E 212 fet

    E 212 fet

    Abstract: MGF1801BT
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1801BT TAPE CARRIER MICROWAVE POWER GaAs FET DESCRIPTION The MGF1801BT , medium-power GaAs FET with an N-channel Schottky gate , is designed for use S-X band amplifiers and oscillators. The hermetically sealed metal-ceramic package


    OCR Scan     		PDF MGF1801BT MGF1801BT 23dBm 100mA E 212 fet

    MGF1502

    Abstract: MGF1412 MGF1601 mgf2116 MGF1802 MGF2124 MGF1404 MGF1405 MGF1902 MGF1501
    Text: - 152 - m. MGF14Q3 MGF1404 MGF1405 MGF1412 MGF1413 MGF1414 MGF1423 MGF1425 MGF1501 MGF1502 MGF1601 MGF1801 MGF1802 MGF1902 MGFÎ903 MGF1904 MGF2116 MGF2117 MGF2124 MGF2124F MGF2124G MGF2148 MGF2148F MGF2148G MGF2172 MGF2205 MGF2407 MGF2407A MGF2415 MGF2415A


    OCR Scan     		PDF MGF1403 MGF1404 MGF1405 MGF1412 MGF1413 12GHz MGF2117 35MHz MGF2124 MGF1502 MGF1601 mgf2116 MGF1802 MGF2124 MGF1902 MGF1501

    MGF1801BT

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1801BT TAPE CARRIER MICROWAVE POWER GaAs FET DESCRIPTION The MGF1801BT , medium-power GaAs FET with an N-channel Schottky gate , is designed for use S-X band amplifiers and oscillators. The hermetically sealed metal-ceramic package


    OCR Scan     		PDF MGF1801BT MGF1801BT 23dBm 100mA

    ha 1406 ha

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGF1801B MICROWAVE POWER GaAs FET DESCRIPTION The MGF1801B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package


    OCR Scan     		PDF MGF1801B MGF1801B, ha 1406 ha

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGF1801B MICROWAVE POWER GaAs FET DESCRIPTION The MGF1801B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package


    OCR Scan     		PDF MGF1801B MGF1801B, 23dBm 100mA

    MGF1801

    Abstract: IG200 mitsubishi microwave MGF1801BT
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1801BT TAPE CARRIER MICROWAVE POWER GaAs FET DESCRIPTION The MGF1801BT , medium-power GaAs FET with an N-channel Schottky g a te , is designed for use S-X band amplifiers and oscillators. The.hermetically sealed metal-ceramic package


    OCR Scan     		PDF MGF1801 MGF1801BT MGF1801BT 23dBm 100mA IG200 mitsubishi microwave

    MGF1801

    Abstract: 2SK279 7200F b191d
    Text: TI D F J b S M T û E 11! □DlDDflD o T T M IT SU BISH I SEMICONDUCTOR <GaAs FET> , . . _ M G F 1 8 0 1 6249829 MITSUBISHI D I S C R E T E SC (2 S K 2 7 9 ) 91D 10080 DT-31-25 FO R M IC R O W A V E P O W E R A M P L IF IE R S DESCRIPTION


    OCR Scan     		PDF DT-31-25 MGF1801 2SK279 7200F b191d

    MGF1200

    Abstract: MGF4310 MGF1100 MGF1412 MGF4301 MGF1304 MGF7003 MGF1102 MGF1302 MGF4305A
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> SYMBOL ON PACKAGE EXAMPLE OF SYMBOL ON MICRO DISK PACKAGE W ithou t bottom bar w ith b o tto m bar Blue A p r. O o t. Orange M ay N ov. B lack June D ec. Red July Jan . Green A ug. Feb. Brown S ep. M a r. « L e f t side c h a ra c te r in d ic a te s th e type num ber.


    OCR Scan     		PDF MGF1102 MGF1302 MGF1303B MGFI323 MGF1402B MGFI412B MGF1403B MGF1423B MGFI425B MGFI902B MGF1200 MGF4310 MGF1100 MGF1412 MGF4301 MGF1304 MGF7003 MGF4305A

    MGF4919G

    Abstract: MGF4919 mgf1903b MGF0907B 14512H mgf4316g MGFC45V2527 MGF1923 MGFC38V3642 MGF0904A
    Text: lid GaAs FETs •GaAs FET SERIES FOR MICROWAVE-BAND LOW-NOISE AMPLIFIERS <Ta = 25-c> PT If f -6 mA ¡¡m i 100 360 < (GHe) ' (mA) f t 3 10 NFmin max (dB) Qs min (dB! 11 4 1.4 4 1.0 12 2.0 i I MGF1302 Vf l P -6 -6 -6 80 240 3 10 MGF1323 -6 -6 80 240 3 10


    OCR Scan     		PDF MGF1302 MGF1303B MGF1323 MGF14 MGF1412B MGF1403B MGF1423B MGF1425B MGF1902B MGF1903B MGF4919G MGF4919 MGF0907B 14512H mgf4316g MGFC45V2527 MGF1923 MGFC38V3642 MGF0904A