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Abstract: No abstract text available
Text: MGF2148 Transistors N-Channel UHF/Microwave MESFET V BR DSS (V)11 V(BR)GSS (V)-9 I(D) Max. (A)1.6 P(D) Max. (W)8.3 Maximum Operating Temp (øC)150õ I(DSS) Min. (A)900m I(DSS) Max. (A)1.6 @V(DS) (V) (Test Condition)3 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.360m
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MGF2148
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Untitled
Abstract: No abstract text available
Text: MGF2148G Transistors N-Channel UHF/Microwave MESFET V BR DSS (V) V(BR)GSS (V)-9 I(D) Max. (A)1.6 P(D) Max. (W)8.0 Maximum Operating Temp (øC)150õ I(DSS) Min. (A)900m I(DSS) Max. (A)1.6 @V(DS) (V) (Test Condition)3 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.360m
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MGF2148G
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2SC3355 SPICE MODEL
Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
Text: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness
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F2002:
F2003:
F2004:
2SC3355 SPICE MODEL
transistor C2003
C319B
MGF1412
RF TRANSISTOR 10GHZ
MRF134 rf model .lib file
2SK571
MGF1402
MRF9331
pb_hp_at41411_19921101
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MGF1502
Abstract: MGF1412 MGF1601 mgf2116 MGF1802 MGF2124 MGF1404 MGF1405 MGF1902 MGF1501
Text: - 152 - m. MGF14Q3 MGF1404 MGF1405 MGF1412 MGF1413 MGF1414 MGF1423 MGF1425 MGF1501 MGF1502 MGF1601 MGF1801 MGF1802 MGF1902 MGFÎ903 MGF1904 MGF2116 MGF2117 MGF2124 MGF2124F MGF2124G MGF2148 MGF2148F MGF2148G MGF2172 MGF2205 MGF2407 MGF2407A MGF2415 MGF2415A
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MGF1403
MGF1404
MGF1405
MGF1412
MGF1413
12GHz
MGF2117
35MHz
MGF2124
MGF1502
MGF1601
mgf2116
MGF1802
MGF2124
MGF1902
MGF1501
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MGF2148
Abstract: MGF2148G F2148G
Text: MIT SUB ISHI {DIS CR ETE SC> TÏ » F l t H M T Ö S 11] OOIOIDS 1 MITSUBISHI SEMICONDUCTOR <GaAs FET> - _ 6249829 MITSUBISHI MGF2148G D I S C R E T E SC 91 D 10105 D ^'67 FOR MICROWAVE POW ER AMPLIFIERS CHIP-CARRIER T Y P E D E S C R IP T IO N The M G F2148G combines the advantages of the least
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MGF2148G
F2148G
MGF2148
MGF2148G
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Untitled
Abstract: No abstract text available
Text: " TÍ d ÍTB b24tiñEti 0010103 MITSUBISHI SEMICONDUCTOR <GaAs FET> MITSUBISHI {DISCRETE SC> ñ MGF2148F FOR MICROWAVE POWER AM PLIFIERS CHIP-CARRIER T Y P E 624 98 29 MITSUBISHI DISCRETE SC 91D 10103 DT'W-ôl DESCRIPTION The M G F2 14 8F combines the advantages of the least
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MGF2148F
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TM 1628 IC
Abstract: MGF2148 1D10101 IC TM 1628
Text: MITSUBISHI {DISCRETE S O TI D eTI DG1G1Q0 S 1 ~ M IT S U B IS H I SE M IC O N D U C T O R <GaAs FET> _ 6249829 MITSUBISHI D I S C R E T E SC 91 D M G F214 8 DT'5?-ö7 10100 FOR MICROWAVE POWER AMPLIFIERS DESCRIPTION The M G F 2 1 4 8 is designed for power amplifiers and oscil
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