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    MG15N6 Price and Stock

    Walsin Technology Corporation MG15N6R8C500CT

    Capacitor: ceramic; 6.8pF; 50V; C0G (NP0); ±0.25pF; 0402
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME MG15N6R8C500CT 10,000
    • 1 -
    • 10 -
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    • 1000 -
    • 10000 $0.00298
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    Walsin Technology Corporation MG15N680J500CT

    Capacitor: ceramic; MLCC; 68pF; 50V; C0G (NP0); ±5%; SMD; 0402
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME MG15N680J500CT 9,900 100
    • 1 -
    • 10 -
    • 100 $0.00788
    • 1000 $0.00295
    • 10000 $0.00202
    		Buy Now

    MG15N6 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MG15N6EK1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG15N6EK1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG15N6EK1 Unknown Power and Industrial Semiconductors Data Book Scan PDF
    MG15N6EK1 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    MG15N6EK1 Toshiba TECHENICAL DATA Scan PDF
    MG15N6EK1 Toshiba (MG15N6EK1 / MG15N2CK1) TRANSISTOR MODULES Scan PDF
    MG15N6ES1 Unknown Catalog Scans - Shortform Datasheet Scan PDF

    MG15N6 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TOSHIBA MG150N2YS40

    Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
    Text: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入


    Original     		PDF 050106DAA1 /SC-70 YTF612 2SK2381 YTF841 2SK2387 YTF442 2SK2149 YTF613 TOSHIBA MG150N2YS40 mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40

    mg75n2ys40

    Abstract: MG15N6ES42 2SK150A 2sk270a MG150n2ys40 MG8N6ES42 MG15G1AL2 mg75j2ys40 MG30G1BL2 S2530A
    Text: 廃止品種一覧表 [ 10 ] [ 10 ] 廃止品種一覧表 次の品種が廃止品種となっております。新規採用は代替品種にてご検討くださいますようお願い申し上 げます。 廃止品種 1 形 名 02BZ2.2~4.7 代替品種


    Original     		PDF 02BZ2 1S2092 1SZ5759 02CZ2 1S2094 2N3055 02CZ5 1S2095A 2N3713 02Z24A1M mg75n2ys40 MG15N6ES42 2SK150A 2sk270a MG150n2ys40 MG8N6ES42 MG15G1AL2 mg75j2ys40 MG30G1BL2 S2530A

    mg75n2ys40

    Abstract: 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A
    Text: 小信号ダイオード SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入


    Original     		PDF 050106DAA1 YTF842 2SK2387 YTF441 2SK2149 YTF613 2SK2381 YTF843 YTF442 mg75n2ys40 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A

    MG15N6EK1

    Abstract: No abstract text available
    Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG15N6EK1 HIGH POWER SWITCHING APPLICATIONS. M OTOR CONTROL APPLICATIONS. . The Collector is Isolation from Case. . 6 Power Transistors and 6 B’ree Wheeling Diodes are Built Into 1 Package. . High DC Current: Gain


    OCR Scan     		PDF MG15N6EK1 MG16N6EK1 MG15N6EK1

    mg15n6ek1

    Abstract: No abstract text available
    Text: GTR MODULE MG15N6EK1 SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. . The Collector is Isolation from Case. . 6 Power Transistors and 6 Free Wheeling Diodes are Built Into 1 Package. . High DC Current Gain : hFE=100 Min. (IC=15A)


    OCR Scan     		PDF MG15N6EK1 mg15n6ek1

    transistor 16305

    Abstract: No abstract text available
    Text: TOSHIBA OISCRETE/OPTO} 90D 16302 9097250 TOSHIBA DISCRETE/OPTO ¿Tostulic SEMICONDUCTOR D T-3J-3S MG15N2CK1 TECHNICAL DATA MG15N6EK1 W o cs ös m H o 2: 00 o f vf £\ > W vO 2 m cs a TOSHIBA CORPORATION OT I A 2 A - 309 - 2 - > L » î "TO TOSHIBA {DISCRETE/OPTO}


    OCR Scan     		PDF MG15N2CK1 MG15N6EK1 MG15N2CK1 Ta-25cC) T0T7550 0Dlti30b DT-33-35 transistor 16305

    MG15N6ES1

    Abstract: MG15N6ES mg15n6
    Text: GTR MODULE SILICON N CHANNEL IGBT MG15N6ES1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. . The Electrodes are Isolated from Case . 6 I G B T s a r e B u i l t - i n to 1 P a c k a g e . . Enhancement-Mode. . Low Saturation Voltage : V C E s a t = 5 V ( M a x . ) ( I c =15A)


    OCR Scan     		PDF MG15N6ES1 bjo50 MG15N6ES1 MG15N6ES mg15n6

    diode t25 4 A8

    Abstract: ABBA MG15N2CK1 MG15N6EK1 MG15N6 DFWA
    Text: SEMICONDUCTOR MG15N2CK1 TECHNICAL DATA MG15N6E1C1 M O CM U> Z M W O z o X TOSHIBA CORPORATION Û T IAÎ A - 309 - fu s itiha SEMICONDUCTOR MC15N2CX1 M G 1 5 N 6 E K 1 TECHNICAL DATA MAXIMUM RATINGS <T.-25*C CHARACTERISTIC SYMBOL RATING VCBO 1100 V Collsctor-Eeitter Sustaining Voltage


    OCR Scan     		PDF MG15N2CK1 MG15N6EK1 MG15N2CK1 81N0LT. 0FRHAT10N NG15N2CK1 15N6EK diode t25 4 A8 ABBA MG15N6EK1 MG15N6 DFWA

    MG15N6ES1

    Abstract: MG15N6ES
    Text: GTR MODULL SILICON N CHANNEL IGBT HIGH POWER S W I T C H I N G APP LI C AT IO NS . M OT OR C O NT RO L APPL IC AT I ON S. . The Electrodes are Isolated from Case . 6 IGBTs are Built-in to 1 Package. . Enhancement-Mode. . Low Saturation Voltage : v C E s a t = 5V ( M a x . ) (IC=15A)


    OCR Scan     		PDF MG15N6ES1 MG15N6ES1 MG15N6ES

    30U6P42

    Abstract: MG15G6EL1 30L6P44 12v dc to 440v ac inverter EI40 transformer 76524P 12v dc choke inverter circuit MG60M1AL1 TA76524 TDK transformer z
    Text: 1. Power MOS-FETs and C4 . Resistors R2 and R 3 are used to balance the C3 and C4 voltages and 20ki2 is used here as the resistance value. C3 and C4 each have a capacitance o f 470juf. 2 Auxiliary power supply for the control cir­ cuit The switching regulator IC TA76524P which


    OCR Scan     		PDF 24VDC 110VAC 100kHz TA76524P 2SK358 100VAC MG15N6EK1 MG25M2YK1X3 30U6P42 MG15G6EL1 30L6P44 12v dc to 440v ac inverter EI40 transformer 76524P 12v dc choke inverter circuit MG60M1AL1 TA76524 TDK transformer z

    j2y transistor

    Abstract: T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497
    Text: As you well know, semiconductors are today essential for use in a very wide range of applications— from consumer to industrial use. In any application, your choice of Toshiba semiconductors will always be correct. To help you choose which semi­ conductor is correct for your application, this brochure outlines maximum ratings,


    OCR Scan     		PDF O220AB O-126 j2y transistor T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497

    Snubber circuit Design

    Abstract: MG15G6EL1 MG20G6EL1 MG25N6EK1 160U2G43 equivalent MG300G1UL1 IGBT snubber for inductive load calculation of IGBT snubber MG400G1UL1 what is fast IGBT transistor
    Text: 1. Ratings of GTR module collector currents, voltage between terminals, power dissipation, junction temperature, storage temperature etc. o f transistors. These charac­ teristics are closely related each other and cannot be considered independently are further, very


    OCR Scan     		PDF 30U6P42 50U6P43 75U6P43 100U6P43 Snubber circuit Design MG15G6EL1 MG20G6EL1 MG25N6EK1 160U2G43 equivalent MG300G1UL1 IGBT snubber for inductive load calculation of IGBT snubber MG400G1UL1 what is fast IGBT transistor

    MG25M1BK1

    Abstract: MG30M1BN1 MG200M1FK1 MG200Q1UK1 MG100Q MG50M1BK1 MG20Q6EK1 MG50Q2YK9 EK1100
    Text: Bipolar Darlington 2 Connection Vceo(SUS) (V) 10 15 20 BK 25 Maximum Rating M A) 50 MG25M1BK1 MG50M1BK1 75 100 150 200 300 MG75M1BK1 1000 MG30M1BN1 (SINGLE) FK MG200M1FK1 MG300M1FK1 1000 MG200M1UK1 MG300M1UK1 1200 MG200Q1UK1 MG300Q1UK1 MG300M1UK2 UK 1400


    OCR Scan     		PDF MG30M1BN1 MG50M1BK1 MG75M1BK1 MG25M1BK1 MG200M1FK1 MG200M1UK1 MG300M1FK1 MG300M1UK1 MG300M1UK2 MG25M2CK2 MG25M1BK1 MG30M1BN1 MG200Q1UK1 MG100Q MG50M1BK1 MG20Q6EK1 MG50Q2YK9 EK1100

    mg15g1al3

    Abstract: MG400H1 2SK1124 2SK791 2sk525 MP6101 2SK531 2SK674 2SK673 2sk405 2sj115
    Text: • A L P H A N U M E R I C A L INDEX# Type No. 2SJ115 2SJ123 2SJ147 2SK357 2SK358 2SK385 2SK386 2SK387 2SK388 2SK405 2SK442 2SK447 2SK525 2SK526 2SK528 2SK529 2SK530 2SK531 2SK532 2SK537 2SK538 2SK539 2SK568 2SK572 2SK573 2SK578 2SK643 2SK644 2SK672 2SK673


    OCR Scan     		PDF 2SJ115 2SJ123 2SJ147 2SK357 2SK358 2SK385 2SK386 2SK387 2SK388 2SK405 mg15g1al3 MG400H1 2SK1124 2SK791 2sk525 MP6101 2SK531 2SK674 2SK673 2sk405 2sj115

    MG100g2ys1

    Abstract: mg25q6es1 MG100J2YS1 YTF830 gt25q103 GT15H101 toshiba MG50N2YS9 MG200J2YS1 mg75n2ys1 MG75J2YS1
    Text: SUMMARY OF POWER MOS FET BY APPLICATIONS Applications of the Toshiba power MOS FETs are gouped to their rated voltages and currents as shown below. POWER MOS FET FAMILIES Q tt-MOS Series Standard ^-M OS family gained outstanding polurarity in the market Q tt-MOS II Series


    OCR Scan     		PDF EG50N2YS9* G15N2YSI MG25N2YS1 MG50N2YS1 G35Q2YSI MG25Q2YS1 MG50Q2YS1 MG25S2YS1 G25N1JS1 G50N1JS1 MG100g2ys1 mg25q6es1 MG100J2YS1 YTF830 gt25q103 GT15H101 toshiba MG50N2YS9 MG200J2YS1 mg75n2ys1 MG75J2YS1