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    MG15N2 Search Results

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    MG15N2 Price and Stock

    Toshiba America Electronic Components MG15N2CK1-T

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics MG15N2CK1-T 3
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    Walsin Technology Corporation MG15N2R7C500CT

    Capacitor: ceramic; MLCC; 2.7pF; 50V; C0G (NP0); ±0.25pF; SMD; 0402
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME MG15N2R7C500CT 100
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    Walsin Technology Corporation MG15N270J500CT

    Capacitor: ceramic; MLCC; 27pF; 50V; C0G (NP0); ±5%; SMD; 0402
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME MG15N270J500CT 10,000
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    MG15N2 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MG15N2CK1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG15N2CK1 Unknown Power and Industrial Semiconductors Data Book Scan PDF
    MG15N2CK1 Toshiba TECHENICAL DATA Scan PDF
    MG15N2Y Unknown TRANSISTOR MODULES Scan PDF
    MG15N2YK1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG15N2YK1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG15N2YK1 Unknown Power and Industrial Semiconductors Data Book Scan PDF
    MG15N2YK1 Westcode Semiconductors NPN transistor for high power switching and notor control applications, 1100V, 15A Scan PDF
    MG15N2YL1 Unknown Scan PDF
    MG15N2YS1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG15N2YS1 Unknown Power and Industrial Semiconductors Data Book Scan PDF

    MG15N2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TOSHIBA MG150N2YS40

    Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
    Text: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入


    Original     		PDF 050106DAA1 /SC-70 YTF612 2SK2381 YTF841 2SK2387 YTF442 2SK2149 YTF613 TOSHIBA MG150N2YS40 mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40

    mg75n2ys40

    Abstract: MG15N6ES42 2SK150A 2sk270a MG150n2ys40 MG8N6ES42 MG15G1AL2 mg75j2ys40 MG30G1BL2 S2530A
    Text: 廃止品種一覧表 [ 10 ] [ 10 ] 廃止品種一覧表 次の品種が廃止品種となっております。新規採用は代替品種にてご検討くださいますようお願い申し上 げます。 廃止品種 1 形 名 02BZ2.2~4.7 代替品種


    Original     		PDF 02BZ2 1S2092 1SZ5759 02CZ2 1S2094 2N3055 02CZ5 1S2095A 2N3713 02Z24A1M mg75n2ys40 MG15N6ES42 2SK150A 2sk270a MG150n2ys40 MG8N6ES42 MG15G1AL2 mg75j2ys40 MG30G1BL2 S2530A

    mg75n2ys40

    Abstract: 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A
    Text: 小信号ダイオード SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入


    Original     		PDF 050106DAA1 YTF842 2SK2387 YTF441 2SK2149 YTF613 2SK2381 YTF843 YTF442 mg75n2ys40 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A

    Untitled

    Abstract: No abstract text available
    Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG15N2YK1 HIGH POWER S WITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built-in to 1 Package. . High DC Current Gain: hj-E= l°0 Min. (Ic=15A)


    OCR Scan     		PDF MG15N2YK1

    transistor 16305

    Abstract: No abstract text available
    Text: TOSHIBA OISCRETE/OPTO} 90D 16302 9097250 TOSHIBA DISCRETE/OPTO ¿Tostulic SEMICONDUCTOR D T-3J-3S MG15N2CK1 TECHNICAL DATA MG15N6EK1 W o cs ös m H o 2: 00 o f vf £\ > W vO 2 m cs a TOSHIBA CORPORATION OT I A 2 A - 309 - 2 - > L » î "TO TOSHIBA {DISCRETE/OPTO}


    OCR Scan     		PDF MG15N2CK1 MG15N6EK1 MG15N2CK1 Ta-25cC) T0T7550 0Dlti30b DT-33-35 transistor 16305

    mg15n2

    Abstract: No abstract text available
    Text: GTR MODULE SILICON N CHANNEL IGBT MG15N2YS1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. . High Input Impedance . High Speed : tf=1.0ns Max. trr=0. 5(is (Max.) . Low Saturation Voltage: V q t (sat)~5.OV(Max.) . Enhancement-Mode . Includes a Complete Half Bridge in one


    OCR Scan     		PDF MG15N2YS1 mg15n2

    MG15N2YS1

    Abstract: ALY TRANSISTOR transistor ALY
    Text: GTR MODULL SILICON N CHANNEL IGBT MG15N2YS1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. . High Input Impedance . High Speed : tf=1.Oys Max. trr=0.5us(Max.) . Low Saturation Voltage: Vqe ( s a t )= 5.OV(Max.) . Enhancement-Mode . Includes a Complete Half Bridge in one


    OCR Scan     		PDF MG15N2YS1 --10V MG15N2YS1 ALY TRANSISTOR transistor ALY

    mg15n2

    Abstract: No abstract text available
    Text: ^ shíbT T d i s c r e t e /o p t o > TO 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA 90D 16156 SEMICONDUCTOR D T -3 3 -2 7 TOSHIBA GTR MODULE MG15N2YS1 TECHNICAL DATA SILICON N CHANNEL IGBT TENTATIVE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.


    OCR Scan     		PDF MG15N2YS1 El/02 DT-33' mg15n2

    diode t25 4 A8

    Abstract: ABBA MG15N2CK1 MG15N6EK1 MG15N6 DFWA
    Text: SEMICONDUCTOR MG15N2CK1 TECHNICAL DATA MG15N6E1C1 M O CM U> Z M W O z o X TOSHIBA CORPORATION Û T IAÎ A - 309 - fu s itiha SEMICONDUCTOR MC15N2CX1 M G 1 5 N 6 E K 1 TECHNICAL DATA MAXIMUM RATINGS <T.-25*C CHARACTERISTIC SYMBOL RATING VCBO 1100 V Collsctor-Eeitter Sustaining Voltage


    OCR Scan     		PDF MG15N2CK1 MG15N6EK1 MG15N2CK1 81N0LT. 0FRHAT10N NG15N2CK1 15N6EK diode t25 4 A8 ABBA MG15N6EK1 MG15N6 DFWA

    mg15n2

    Abstract: No abstract text available
    Text: TO TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA D E | TDTTESO 001bDS4 1 DT"33-3 5 90D 16054 SEMICONDUCTOR TOSHIBA GTR MODULE M G 1 5 N 2 Y K 1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.


    OCR Scan     		PDF 001bDS4 MG15N2YK1 mg15n2

    MG30G2CL3

    Abstract: MG25N2CK1 MG75H2YL1A MG50G2CL3 MG75G2YL1A MG75H2CL1 MG15N2CK1 MG25M2YK1 MG25N2YK1 KG29
    Text: -219% £ CK-3 Cl O B1 Bl El/C 2 E1/C2 62 & 3 . ;U -K Ta=25t m s Ts'i (V) (us) IB VcE V BE t St 9 t rr V f I B1 t on I B2 tf I f C//s) IF (A) fi * (A) V BE di/dt ccm ^ fifi mm Wi-F SP m g b m ^ £ fi Á (H) IS * 3.5 15 0.3 2 h 6 0.3 -0.9 600 40 1.5 15 1.0


    OCR Scan     		PDF 2-68B2A MG15N2CK1 2-94C3A NG15N2YK1 HG25M2CK2 MG25M2YK1 H-101 MG30G2CL3 MG25N2CK1 MG75H2YL1A MG50G2CL3 MG75G2YL1A MG75H2CL1 MG15N2CK1 MG25M2YK1 MG25N2YK1 KG29

    mg15g1al3

    Abstract: MG400H1 2SK1124 2SK791 2sk525 MP6101 2SK531 2SK674 2SK673 2sk405 2sj115
    Text: • A L P H A N U M E R I C A L INDEX# Type No. 2SJ115 2SJ123 2SJ147 2SK357 2SK358 2SK385 2SK386 2SK387 2SK388 2SK405 2SK442 2SK447 2SK525 2SK526 2SK528 2SK529 2SK530 2SK531 2SK532 2SK537 2SK538 2SK539 2SK568 2SK572 2SK573 2SK578 2SK643 2SK644 2SK672 2SK673


    OCR Scan     		PDF 2SJ115 2SJ123 2SJ147 2SK357 2SK358 2SK385 2SK386 2SK387 2SK388 2SK405 mg15g1al3 MG400H1 2SK1124 2SK791 2sk525 MP6101 2SK531 2SK674 2SK673 2sk405 2sj115

    MG30H1BL1

    Abstract: s3885 MG100H2ZS1 MG100g2ys1 MG100N2YS1 MP6502 MG150J2YS1 MP6101 MG25Q6ES1 MG15J6ES1
    Text: BIPOLAR DARLINGTON I 400-600V # : NON IS OI .A TF R T Y P E T O - 3 P I . * : UNDKR D E V E L O P M E N T BIPOLAR DARLINGTON II (10 00 -1400V) * : UNDER D EVELOPM ENT MOS FET MODULE MATRIX S : NON ISOLATED TY PE * : UNDER DEVELOPM ENT IGBT MODULE MATRIX


    OCR Scan     		PDF 00-600V) -1400V) GT8N101 GT8Q101* GT25H101P MG25H1BS1 GT25JI01 GT50G102* MG50H1BS1 GT50J101 MG30H1BL1 s3885 MG100H2ZS1 MG100g2ys1 MG100N2YS1 MP6502 MG150J2YS1 MP6101 MG25Q6ES1 MG15J6ES1

    MG30G2CL3

    Abstract: MG50M2CK2 MG75H2CL1 MG25M2CK2 MG50M2YK9 MG75H2YL1A MG50G2YL1A MG25M2YK9 MG50Q2Y MG15N2YK1
    Text: - 218 — n p n , > o 9 - ' y \ v • o y : i- * 'í) l- f ''í± - F i4 Vauxnv - i n « 2 flü ü fflü g tl) asn o s CK-1 / 'W W ^ U K U . lu i. t CK-2 tu o ¡>j± o Y - V T o BI y h / H 1’ c r ) i¡'±/\ Z B1 aZ E l/ B2 32 í± 1 . T c=25 c * m % V CBO


    OCR Scan     		PDF MG15N2 MG15N2YK1 MG25M2CK2 MG25M2YK1 H-101 MG30G2CL3 MG50M2CK2 MG75H2CL1 MG50M2YK9 MG75H2YL1A MG50G2YL1A MG25M2YK9 MG50Q2Y

    MG30G2CL3

    Abstract: MG25M1BK1 MG50M2CK2 MG50M1BK1 MG100G1AL3 MG10G6EL2 MG30G1BL3 MG30G6EL1 MG20G6EL1 MG25H2YS1
    Text: 9097250 TOSHIBA DISCRETE/O PTO TOSHIBA {DISCRETE/OPTO} TO 9 0D 16488 D T- T Ë j | TOT VE h U UUJihMöö Jb p GTR Modules Bipolar Darlington n o te : W A STA G E DARLINGTON, CK):3-STAGE DARLINGTON $:UNDER DEVELOPMENT * :V c e x <s u s i #:UL RECOGNIZED


    OCR Scan     		PDF MG100G1AL3 MG200H1ALZ MG30G1BL3 MG50G1BLÃ MG75G1BL1 MG25M1BK1 MG50M1BK1 MG100G1FL1 M6150H1FLI MG30CH1FU MG30G2CL3 MG25M1BK1 MG50M2CK2 MG50M1BK1 MG100G1AL3 MG10G6EL2 MG30G1BL3 MG30G6EL1 MG20G6EL1 MG25H2YS1

    MG100M2YK1

    Abstract: TRANSISTOR D 880 MG200M1UK1 MG75G2YL1 MG75M2YK1 MG15N2YK1 MG25M2YK1 MG25N2YK1 Westcode MG50G2YL1
    Text: WESTCODE TRANSISTOR MODULES are designed for use in various types of motor control and other high power switching applications and consist of insulated type DARLINGTON TRANSISTORS. The electrodes are fully isolated from heat sink. Single ended electrode construction is used to greatly simplify mounting. A wide variety of devices


    OCR Scan     		PDF