Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MBH32A Search Results

    MBH32A Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MBH32A National Semiconductor 32 Lead Molded Thin Small Outline Package, EIAJ, Type I Original PDF

    MBH32A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MBH32A

    Abstract: No abstract text available
    Text: 32 Lead Molded Thin Small Outline Package EIAJ Type I NS Package Number MBH32A All dimensions are in millimeters LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL


    Original     		PDF MBH32A MBH32A

    C1995

    Abstract: J32AQ NM27C040 VA32A
    Text: NM27C040 4 194 304-Bit 512K x 8 High Performance CMOS EPROM General Description The NM27C040 is a high performance 4 194 304-bit Electrically Programmable UV Erasable Read Only Memory It is organized as 512K words of 8 bits each Its pin-compatibility with byte-wide JEDEC EPROMs enables upgrades through


    Original     		PDF NM27C040 304-Bit NM27C040 304-bit C1995 J32AQ VA32A

    NM27C010

    Abstract: No abstract text available
    Text: General Description The NM27C010 is a high performance, 1,048,576-bit Electrically Programmable UV Erasable Read Only Memory. It is organized as 128K-words of 8 bits each. Its pin-compatibility with byte-wide JEDEC EPROMs enables upgrades through 8 Mbit EPROMs. The “Don’t Care” feature during read operations allows memory expansions from 1M to 8M bits with


    Original     		PDF NM27C010 576-bit 128K-words 28-pin ds010798

    SmD TRANSISTOR a42

    Abstract: TRANSISTOR BC 136 TRANSISTOR BC 157 transistor BC 945 TRANSISTOR BC 187 SNA10A TRANSISTOR BC 413 MO-220-WGGD-2 pdf on BC 187 TRANSISTOR MO-220-WKKD-2
    Text: Plastic Package Dimensional/Thermal Data The following table identifies all of the plastic package configurations and pin counts per package type offered by National Semiconductor. In addition, the table provides dimensional and thermal data for each of the plastic packages


    Original     		PDF

    marking codes fairchild

    Abstract: NM27C256N J28AQ FAIRCHILD SEMICONDUCTOR PRODUCT MARKING CODES J24AQ J28CQ N40A V44A VA32A J40BQ
    Text: Non-Volatile Memory - EPROM Physical Dimensions Contents Tape and Reel . 2 Part Marking . 3 Package Outlines J24AQ . 4


    Original     		PDF J24AQ J28AQ J28CQ J32AQ J40BQ MBS28A marking codes fairchild NM27C256N J28AQ FAIRCHILD SEMICONDUCTOR PRODUCT MARKING CODES J24AQ J28CQ N40A V44A VA32A J40BQ

    27lc64

    Abstract: 27lC256 27LC010 national semiconductor 27lc256 NM27LC512 J28CQ MBH32A C1995
    Text: NM27LC512 524 288-Bit 64k x 8 Low Current CMOS EPROM General Description Features The NM27LC512 is a 64k x 8 EPROM manufactured on a proven manufacturable CMOS process consuming extremely low current in both the active and standby modes The NM27LC512 consumes a mere 30 mW making it ideal


    Original     		PDF NM27LC512 288-Bit NM27LC512 27lc64 27lC256 27LC010 national semiconductor 27lc256 J28CQ MBH32A C1995

    vjp44a

    Abstract: MO-16B-AB TA11B TF11B cu50 ad 153 transistor transistor bd 905 transistor BC 185 mkt 344 MS-026-bcd
    Text: Plastic Package Dimensional/Thermal Data The following table identifies all of the plastic package configurations and pin counts per package type offered by National Semiconductor. In addition, the table provides dimensional and thermal data for each of the plastic packages


    Original     		PDF MS011798 vjp44a MO-16B-AB TA11B TF11B cu50 ad 153 transistor transistor bd 905 transistor BC 185 mkt 344 MS-026-bcd

    NMC27C010

    Abstract: eprom 27c512 27C020 27C040 27C080 27C256 27C512 C1995 NM27C010 27C256 wsi
    Text: NM27C010 1 048 576-Bit 128K x 8 High Performance CMOS EPROM General Description The NM27C010 is a high performance 1 048 576-bit Electrically Programmable UV Erasable Read Only Memory It is organized as 128K-words of 8 bits each Its pin-compatibility with byte-wide JEDEC EPROMs enables upgrades through


    Original     		PDF NM27C010 576-Bit NM27C010 576-bit 128K-words 28-pin 20-3A NMC27C010 eprom 27c512 27C020 27C040 27C080 27C256 27C512 C1995 27C256 wsi

    NM27LV010B

    Abstract: No abstract text available
    Text: General Description The NM27LV010B is a high performance Low Voltage Electrically Programmable Read Only Memory. It is manufactured using Fairchild’s latest 0.8µ CMOS split gate AMG EPROM technology. This technology allows the part to operate at speeds as fast as 250 ns over industrial temperatures


    Original     		PDF NM27LV010B ds012333

    93c46ln

    Abstract: 93s46 eprom marking codes fairchild 24U02 93S46 eeprom FAIRCHILD SEMICONDUCTOR PRODUCT MARKING CODES F46L 24C02 code example assembly 93S46 24C02LN
    Text: Non-Volatile Memory - EEPROM Physical Dimensions Contents Tape and Reel . 2 Part Marking . 3 Package Outlines M08A .


    Original     		PDF MTC08 VBH48A VEH64A 93c46ln 93s46 eprom marking codes fairchild 24U02 93S46 eeprom FAIRCHILD SEMICONDUCTOR PRODUCT MARKING CODES F46L 24C02 code example assembly 93S46 24C02LN

    TSOP 86 Package

    Abstract: MBH32A MBS28A MDA44 MDB44
    Text: Thin Small Outline Package TSOP 28 Lead Molded Thin Small Outline Package NS Package Number MBS28A 1999 National Semiconductor Corporation MS101177 www.national.com Thin Small Outline Package (TSOP) May 1999 32 Lead Molded Thin Small Outline Package, EIAJ, Type I


    Original     		PDF MBS28A MS101177 MBH32A MDA44 MDB44 TSOP 86 Package MBH32A MBS28A MDA44 MDB44

    iso 1043-1

    Abstract: DIN 6120 iso 1043-1 polypropylene j1344 sae j1344 W28B D1972 DIN6120 d24j TA11A
    Text: Packing Considerations Methods, Materials and Recycling Transport Media All NSC commercial devices are prepared, inspected and packed to insure proper physical support and protection during handling, transportation and shipment. Assembled devices are packed in one or more of the following container


    Original     		PDF MS011809-4 MS011809-1 MS011809-5 MS011809-2 MS011809-6 MS011809-3 MS011809-7 MS011809 iso 1043-1 DIN 6120 iso 1043-1 polypropylene j1344 sae j1344 W28B D1972 DIN6120 d24j TA11A

    Untitled

    Abstract: No abstract text available
    Text: Package Number MBH32A 0.79 20.01 0,037 • 0.042 (0.95 ■ 1.06) O ~ r 0.02 T y p (12.7) 117 16 ' 0 .0 0 6 -0 .0 0 1 0 (0.15-0.25) TYP 0.72 (18.4) 0.006 (0.150)±0.08 (Leadtram e Thickness) 0.010 / ' See Detail A (0-0.25) (0.4-0.6) D ETA IL A Typical All dimensions are in inches (millimeters) unless otherwise noted


    OCR Scan     		PDF MBH32A

    Untitled

    Abstract: No abstract text available
    Text: Decem ber 1994 Semiconductor NM27LV010B 1,048,576-Bit 128k x 8 Low Voltage EPROM General Description Features The N M 27LV010B is a high performance Low Voltage Elec­ trically Programmable Read Only Memory. It is manufac­ tured using National’s latest 0 .8 ju, C M O S split gate A M G


    OCR Scan     		PDF NM27LV010B 576-Bit 27LV010B 20-3A

    NM27C010

    Abstract: NM27LV010 PTFC
    Text: NM27LV010 1,048,576-Bit 128k x 8 Low Voltage EPROM General Description The NM27LV010 is a high performance Low Voltage Electri­ cally Programmable Read Only Memory. It is manufactured using National's latest 1.2/x CMOS split gate SVG EPROM technology. This technology allows the part to operate at


    OCR Scan     		PDF NM27LV010 576-Bit NM27LV010 NM27C010 PTFC

    Untitled

    Abstract: No abstract text available
    Text: December 1994 N M 27LV010B 1,048,576-Bit 128k x 8 Low V o ltag e EPROM General Description Features The NM27LV010B is a high performance Low Voltage Elec­ trically Programmable Read Only Memory. It is manufac­ tured using National’s latest 0.8p, CMOS split gate AMGtm


    OCR Scan     		PDF 27LV010B 576-Bit NM27LV010B 20-3A

    70.4 L marking

    Abstract: No abstract text available
    Text: Package Outlines Section 3 Contents Tape and R ee Part


    OCR Scan     		PDF J28CQ 32-Lead VA32A. 70.4 L marking

    27C010

    Abstract: 27C020 NM27C040 512K x 8 High Performance CMOS EPROM 0300-040
    Text: December 1995 NM27C040 4,194,304-Bit 512K x 8 High Performance CMOS EPROM General Description The NM27C040 is a high performance, 4,194,304-bit Electri­ cally Programmable UV Erasable Read Only Memory. It is organized as 512K words of 8 bits each. Its pin-compatibllity


    OCR Scan     		PDF NM27C040 304-Bit NM27C040 304-bit 27C010 27C020 512K x 8 High Performance CMOS EPROM 0300-040

    NM27LV010B

    Abstract: NM27LV010BTE 12.75V PGM fairchild 5555
    Text: NM27LV010B 1,048,576-Bit 128k x 8 Low Voltage EPROM S E M IC O N D U C T O R tm NM27LV010B 1,048,576-Bit (12ôk x 8) Low Voltage EPROM General Description Features The NM 27LV010B is a high performance Low Voltage Electrically Program mable Read Only Memory. It is m anufactured using


    OCR Scan     		PDF NM27LV010B 576-Bit NM27LV01 NM27LV010B operati1793-856856 NM27LV010BTE 12.75V PGM fairchild 5555

    NM27LV010B

    Abstract: No abstract text available
    Text: D ecem ber 1994 NM27LV010B 1,048,576-Bit 128k x 8 Low Voltage EPROM General Description Features The N M 27LV 010B is a high perform ance Low Voltage E lec­ trica lly Program m able Read O nly Memory. It is m anufac­ tured using N ational’s latest 0.8/j, C M OS split gate AMGtm


    OCR Scan     		PDF NM27LV010B 576-Bit NM27LV010B

    8A13

    Abstract: 27C01
    Text: MEMORY 5TE » • b S Q l l E b G D_b732T_7GT_ National mm Semiconductor PRELIMINARY November 1992 NM27C020 2,097,152-Bit (256K x 8) UV Erasable CMOS EPROM / General Description The NM27C020 is a high performance 2,097,152-bit EPROM. It is organized as 256 K-words of 8 bits each. Its


    OCR Scan     		PDF NM27C020 152-Bit 152-bit 8A13 27C01

    Untitled

    Abstract: No abstract text available
    Text: m ic o n d u c t d r t m NM27LV010 1,048,576-Bit 128k x 8 Low Voltage EPROM General Description Features The NM27LV010 is a high perform ance Low Voltage Electrically Program mable Read O nly Memory. It is m anufactured using Fairchild’s AM G EPROM technology. This technology allows


    OCR Scan     		PDF NM27LV010 576-Bit

    Untitled

    Abstract: No abstract text available
    Text: November 1994 Semiconductor N M 27LV010 1,048,576-Bit 128k x 8 Low V o ltag e EPROM General Description The NM27LV010 is a high performance Low Voltage Electri­ cally Programmable Read Only Memory. It is manufactured using National’s latest O.B/j, CMOS split gate AMGtm


    OCR Scan     		PDF 27LV010 576-Bit NM27LV010 20-3A

    A15C

    Abstract: MBH32A NM27LV010
    Text: NM27LV010 1,048,576-Bit 128k x 8 Low Voltage EPROM S E M I C O N D U C T O R tm NM27LV010 1,048,576-Bit (12ôk x 8) Low Voltage EPROM General Description Features The NM 27LV010 is a high performance Low Voltage Electrically Program mable Read Only Memory. It is m anufactured using


    OCR Scan     		PDF NM27LV010 576-Bit NM27LV010 Family1793-856856 A15C MBH32A