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    J32AQ Search Results

    J32AQ Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    J32AQ National Semiconductor 32 Lead Ceramic Dual-in-Line Package, EPROM Original PDF

    J32AQ Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    J32AQ

    Abstract: No abstract text available
    Text: 32 Lead Ceramic Dual-in-Line Package EPROM NS Package Number J32AQ All dimensions are in inches millimeters LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL


    Original     		J32AQ J32AQ PDF

    27C512 National Semiconductor

    Abstract: 27C010 27C040 27C080 27C256 27C512 C1996 NM27C020 NM27C020Q
    Text: June 1995 NM27C020 2 097 152-Bit 256K x 8 UV Erasable CMOS EPROM General Description The NM27C020 is a high performance 2 097 152-bit EPROM It is organized as 256 K-words of 8 bits each Its pin-compatibility with byte-wide JEDEC EPROMs enables upgrades through 8 Mbit EPROMs The ‘‘Don’t Care’’ feature during read operations enables memory expansions up


    Original     		NM27C020 152-Bit NM27C020 27C512 National Semiconductor 27C010 27C040 27C080 27C256 27C512 C1996 NM27C020Q PDF

    National Controls ne 545

    Abstract: 27C010 27C040 27C080 27C256 27C512 NM27C020 eprom connection NM27C020N fairchild eprom
    Text: NM27C020 2,097,152-Bit 256K x 8 UV Erasable CMOS EPROM General Description Features The NM27C020 is a high speed 2 Megabit CMOS UV-EPROM manufactured on Fairchild’s advanced sub-micron technology. Utilizing the AMG architecture, this advanced CMOS process


    Original     		NM27C020 152-Bit NM27C020 100ns National Controls ne 545 27C010 27C040 27C080 27C256 27C512 eprom connection NM27C020N fairchild eprom PDF

    C1995

    Abstract: J32AQ NM27C040 VA32A
    Text: NM27C040 4 194 304-Bit 512K x 8 High Performance CMOS EPROM General Description The NM27C040 is a high performance 4 194 304-bit Electrically Programmable UV Erasable Read Only Memory It is organized as 512K words of 8 bits each Its pin-compatibility with byte-wide JEDEC EPROMs enables upgrades through


    Original     		NM27C040 304-Bit NM27C040 304-bit C1995 J32AQ VA32A PDF

    NM27C010

    Abstract: No abstract text available
    Text: General Description The NM27C010 is a high performance, 1,048,576-bit Electrically Programmable UV Erasable Read Only Memory. It is organized as 128K-words of 8 bits each. Its pin-compatibility with byte-wide JEDEC EPROMs enables upgrades through 8 Mbit EPROMs. The “Don’t Care” feature during read operations allows memory expansions from 1M to 8M bits with


    Original     		NM27C010 576-bit 128K-words 28-pin ds010798 PDF

    transistor BC 458

    Abstract: transistor BC 945 ac 1084 transistor bc 577 Transistor BC 585 MS-015-AB TRANSISTOR A42 bd 743 transistor uA109 CA 358 AE
    Text: Hermetic Dimensional/Thermal Data The following table identifies all of the hermetic package configurations and pin counts per package type offered by National Semiconductor. In addition, the table provides dimensional and thermal data for each of the ceramic and


    Original     		MS011795 transistor BC 458 transistor BC 945 ac 1084 transistor bc 577 Transistor BC 585 MS-015-AB TRANSISTOR A42 bd 743 transistor uA109 CA 358 AE PDF

    27C040

    Abstract: 27C256 27C512 FM27C010 27C512 UV
    Text: FM27C010 1,048,576-Bit 128K x 8 High Performance CMOS EPROM General Description The FM27C010 is one member of a high density EPROM Family which range in densities up to 4 Megabit. The FM27C010 is a high performance, 1,048,576-bit Electrically Programmable UV Erasable Read Only Memory. It is organized


    Original     		FM27C010 576-Bit FM27C010 576-bit 128K-words 27C040 27C256 27C512 27C512 UV PDF

    marking codes fairchild

    Abstract: NM27C256N J28AQ FAIRCHILD SEMICONDUCTOR PRODUCT MARKING CODES J24AQ J28CQ N40A V44A VA32A J40BQ
    Text: Non-Volatile Memory - EPROM Physical Dimensions Contents Tape and Reel . 2 Part Marking . 3 Package Outlines J24AQ . 4


    Original     		J24AQ J28AQ J28CQ J32AQ J40BQ MBS28A marking codes fairchild NM27C256N J28AQ FAIRCHILD SEMICONDUCTOR PRODUCT MARKING CODES J24AQ J28CQ N40A V44A VA32A J40BQ PDF

    FM27C040

    Abstract: 27C010 FM27C040QXXX
    Text: FM27C040 4,194,304-Bit 512K x 8 High Performance CMOS EPROM General Description Features The FM27C040 is a high performance, 4,194,304-bit Electrically Programmable UV Erasable Read Only Memory. It is organized as 512K words of 8 bits each. Its pin-compatibility with byte-wide


    Original     		FM27C040 304-Bit FM27C040 304-bit 150ns 32-pin 27C010 FM27C040QXXX PDF

    NMC27C010

    Abstract: eprom 27c512 27C020 27C040 27C080 27C256 27C512 C1995 NM27C010 27C256 wsi
    Text: NM27C010 1 048 576-Bit 128K x 8 High Performance CMOS EPROM General Description The NM27C010 is a high performance 1 048 576-bit Electrically Programmable UV Erasable Read Only Memory It is organized as 128K-words of 8 bits each Its pin-compatibility with byte-wide JEDEC EPROMs enables upgrades through


    Original     		NM27C010 576-Bit NM27C010 576-bit 128K-words 28-pin 20-3A NMC27C010 eprom 27c512 27C020 27C040 27C080 27C256 27C512 C1995 27C256 wsi PDF

    fg 166 a2

    Abstract: capacity of EPROM FM27C010 27C040 27C256 27C512
    Text: FM27C010 1,048,576-Bit 128K x 8 High Performance CMOS EPROM General Description The FM27C010 is manufactured using Fairchild’s advanced CMOS AMG EPROM technology. The FM27C010 is a high performance, 1,048,576-bit Electrically Programmable UV Erasable Read Only Memory. It is organized


    Original     		FM27C010 576-Bit FM27C010 576-bit 128K-words microproce44 fg 166 a2 capacity of EPROM 27C040 27C256 27C512 PDF

    93c46ln

    Abstract: 93s46 eprom marking codes fairchild 24U02 93S46 eeprom FAIRCHILD SEMICONDUCTOR PRODUCT MARKING CODES F46L 24C02 code example assembly 93S46 24C02LN
    Text: Non-Volatile Memory - EEPROM Physical Dimensions Contents Tape and Reel . 2 Part Marking . 3 Package Outlines M08A .


    Original     		MTC08 VBH48A VEH64A 93c46ln 93s46 eprom marking codes fairchild 24U02 93S46 eeprom FAIRCHILD SEMICONDUCTOR PRODUCT MARKING CODES F46L 24C02 code example assembly 93S46 24C02LN PDF

    27C010

    Abstract: 27C040 27C080 27C256 27C512 NM27C020
    Text: NM27C020 2,097,152-Bit 256K x 8 UV Erasable CMOS EPROM General Description Features The NM27C020 is a high speed 2 Megabit CMOS UV-EPROM manufactured on Fairchild’s advanced sub-micron technology. Utilizing the AMG architecture, this advanced CMOS process


    Original     		NM27C020 152-Bit NM27C020 100ns C1793-856858 27C010 27C040 27C080 27C256 27C512 PDF

    Untitled

    Abstract: No abstract text available
    Text: Package Outlines 32 Lead Ceramic Dual-in-Line Package Number J32AQ 0.76- 1.40 BY DEVICE SIZE 0.175 (4 .4 5 ) MAX 0:?g5 MAX TYP (5.72) j | ~F~~X All dimensions are in inches (millimeters) unless otherwise noted www.fairchildsemi.com 702 | | fj).0 1 5 -0.060


    OCR Scan     		J32AQ PDF

    M27C040

    Abstract: 27C040Q
    Text: NM27C040 4,194,304-Bit 512K x 8 High Performance CMOS EPROM General Description Features The NM 27C040 is a high performance, 4,194,304-bit Electrically Program mable UV Erasable Read O nly Memory. It is organized as 512K w ords of 8 bits each. Its pin-com patibility with byte-wide


    OCR Scan     		NM27C040 304-Bit 27C040 304-bit 120ns M27C040 27C040Q PDF

    Untitled

    Abstract: No abstract text available
    Text: semiconductor NM27C010 1,048,576-Bit 128K x 8 High Performance CMOS EPROM General Description The NM27C010 is manufactured using Fairchild’s advanced CMOS AMG™ EPROM technology. The NM27C010 is a high performance, 1,048,576-bit Electrically Programmable UV Erasable Read Only Memory. It is organized


    OCR Scan     		NM27C010 576-Bit NM27C010 576-bit 128K-words PDF

    Untitled

    Abstract: No abstract text available
    Text: NM27C010 1,048,576-Bit 128K x 8 High Performance CMOS EPROM General Description The NM27C010 is manufactured using Fairchild’s advanced CMOS AMG EPROM technology. The NM27C010 is a high performance, 1,048,576-bit Electrically Programmable UV Erasable Read Only Memory. It is organized


    OCR Scan     		NM27C010 576-Bit NM27C010 576-bit 128K-words PDF

    eprom 27c256 28 PIN DIP 120 NS

    Abstract: 27C020 27C040 27C080 27C256 27C512 NM27C010
    Text: NM27C010 1,048,576-Bit 128K x 8 High Performance CMOS EPROM The NM 27C010 is m anufactured using Fairchild’s advanced CM OS AM G EPROM technology. General Description The NM 27C010 is a high performance, 1,048,576-bit Electrically Program mable UV Erasable Read O nly Memory. It is organized


    OCR Scan     		NM27C010 576-Bit 576-bit 128K-words 28-pin eprom 27c256 28 PIN DIP 120 NS 27C020 27C040 27C080 27C256 27C512 PDF

    27C010

    Abstract: 27C020 NM27C040 512K x 8 High Performance CMOS EPROM 0300-040
    Text: December 1995 NM27C040 4,194,304-Bit 512K x 8 High Performance CMOS EPROM General Description The NM27C040 is a high performance, 4,194,304-bit Electri­ cally Programmable UV Erasable Read Only Memory. It is organized as 512K words of 8 bits each. Its pin-compatibllity


    OCR Scan     		NM27C040 304-Bit NM27C040 304-bit 27C010 27C020 512K x 8 High Performance CMOS EPROM 0300-040 PDF

    national eprom

    Abstract: NM27C010Q 27C020 27C040 27C080 27C256 27C512 NM27C010 ee 3007 NT120
    Text: January 1994 Semi co n d u C t 0 r NM27C010 1,048,576-Bit 128K x 8 High Performance CMOS EPROM General Description The NM27C010 is a high performance, 1,048,576-bit Electri­ cally Programmable UV Erasable Read Only Memory. It is organized as 128K-words of 8 bits each. Its pin-compatibility


    OCR Scan     		NM27C010 576-Bit NM27C010 576-bit 128K-words 28-pin national eprom NM27C010Q 27C020 27C040 27C080 27C256 27C512 ee 3007 NT120 PDF

    J32AQ

    Abstract: NM27C040 VA32A
    Text: tm NM27C040 4,194,304-Bit 512K x 8 High Performance CMOS EPROM General Description Features The NM27C040 is a high performance, 4,194,304-bit Electrically Program mable UV Erasable Read Only Memory. It is organized as 512K words of 8 bits each. Its pin-com patibility with byte-wide


    OCR Scan     		NM27C040 304-Bit NM27C040 304-bit 100ns J32AQ VA32A PDF

    8A13

    Abstract: 27C01
    Text: MEMORY 5TE » • b S Q l l E b G D_b732T_7GT_ National mm Semiconductor PRELIMINARY November 1992 NM27C020 2,097,152-Bit (256K x 8) UV Erasable CMOS EPROM / General Description The NM27C020 is a high performance 2,097,152-bit EPROM. It is organized as 256 K-words of 8 bits each. Its


    OCR Scan     		NM27C020 152-Bit 152-bit 8A13 27C01 PDF

    27C010

    Abstract: 27C040 27C080 27C256 27C512 NM27C020
    Text: NM27C020 2,097,152-Bit 256K x 8 UV Erasable CMOS EPROM General Description Features The NM 27C020 is a high speed 2 M egabit CM OS UV-EPROM m anufactured on Fairchild’s advanced sub-m icron technology. Utilizing the AM G architecture, this advanced CM OS process


    OCR Scan     		NM27C020 152-Bit 100ns 27C010 27C040 27C080 27C256 27C512 PDF

    27C020

    Abstract: 27C040 27C080 27C256 27C512 NM27C010
    Text: January 1994 Semi co n d u C t 0 r NM27C010 1,048,576-Bit 128K x 8 High Performance CMOS EPROM General Description The NM27C010 is a high performance, 1,048,576-bit Electri­ cally Programmable UV Erasable Read Only Memory. It is organized as 128K-words of 8 bits each. Its pin-compatibility


    OCR Scan     		NM27C010 576-Bit 576-bit 128K-words 28-pin 20-3A 27C020 27C040 27C080 27C256 27C512 PDF