Untitled
Abstract: No abstract text available
Text: Decem ber 1994 Semiconductor 27LV010B 1,048,576-Bit 128k x 8 Low Voltage EPROM General Description Features The N M 27LV010B is a high performance Low Voltage Elec trically Programmable Read Only Memory. It is manufac tured using National’s latest 0 .8 ju, C M O S split gate A M G
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NM27LV010B
576-Bit
27LV010B
20-3A
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Untitled
Abstract: No abstract text available
Text: December 1994 N M 27LV010B 1,048,576-Bit 128k x 8 Low V o ltag e EPROM General Description Features The 27LV010B is a high performance Low Voltage Elec trically Programmable Read Only Memory. It is manufac tured using National’s latest 0.8p, CMOS split gate AMGtm
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27LV010B
576-Bit
NM27LV010B
20-3A
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NM27LV010B
Abstract: NM27LV010BTE 12.75V PGM fairchild 5555
Text: 27LV010B 1,048,576-Bit 128k x 8 Low Voltage EPROM S E M IC O N D U C T O R tm 27LV010B 1,048,576-Bit (12ôk x 8) Low Voltage EPROM General Description Features The NM 27LV010B is a high performance Low Voltage Electrically Program mable Read Only Memory. It is m anufactured using
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NM27LV010B
576-Bit
NM27LV01
NM27LV010B
operati1793-856856
NM27LV010BTE
12.75V PGM
fairchild 5555
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Untitled
Abstract: No abstract text available
Text: 27LV010B S E M I C O N D U C T O R TM General Description Features The NM 27LV010B is a high performance Low Voltage Electrically Program mable Read O nly Memory. It is m anufactured using Fairchild’s split gate AM G EPROM technology. This technology
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NM27LV010B
NM27LV010B
576-Bit
27LV010B
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Untitled
Abstract: No abstract text available
Text: PRE LIM INARY Advanced Micro Devices Am27LV010/Am27LV01 OB 1 Megabit 131,072 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Single +3.3 V power supply — Regulated power supply 3.0 V-3.6 V — Unregulated power supply 2.7 V-3.6 V (for battery operated systems)
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Am27LV010/Am27LV01
28-pin
32-pin
7341A-11
Am27LV010/Am27LV010B
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Untitled
Abstract: No abstract text available
Text: a PRELIM INARY Advanced Micro Devices Am27LV010/Am27LV01 OB 1 Megabit 131,072 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Single +3.3 V power supply — Regulated power supply 3.0 V -3.6 V — Unregulated power supply 2.7 V-3.6 V (for battery operated systems)
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Am27LV010/Am27LV01
28-pin
32-pin
7341A-11
Am27LV010/Am27LV010B
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PDF
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NM27LV010B
Abstract: No abstract text available
Text: D ecem ber 1994 27LV010B 1,048,576-Bit 128k x 8 Low Voltage EPROM General Description Features The N M 27LV 010B is a high perform ance Low Voltage E lec trica lly Program m able Read O nly Memory. It is m anufac tured using N ational’s latest 0.8/j, C M OS split gate AMGtm
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NM27LV010B
576-Bit
NM27LV010B
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PDF
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Untitled
Abstract: No abstract text available
Text: a Advanced Micro Devices Am27LV010/Am27LV01 OB 1 Megabit 131,072 x 8-Bit Low Voltage CMOS EPROM DISTINCTIVE CHARACTERISTICS • ■ ■ Fast Flashrite program m ing — Typical programm ing tim e of 16 seconds Single +3.3 V pow er supply — Regulated power supply 3.0 V -3 .6 V
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Am27LV010/Am27LV01
32-pin
Am33C93A
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