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    27LC010 Search Results

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    27lc64

    Abstract: 27lc512 NM27LC256 C1995 J28CQ NM27LC256Q250
    Text: NM27LC256 262 144-Bit 32k x 8 Low Current CMOS EPROM General Description Features The NM27LC256 is a 32k x 8 EPROM manufactured on a proven manufacturable CMOS process consuming extremely low current in both the active and standby modes The NM27LC256 consumes a mere 17 5 mW (typical) making it ideal for battery powered portable and hand held systems and for systems using ‘‘in-line’’ power


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    PDF NM27LC256 144-Bit NM27LC256 27lc64 27lc512 C1995 J28CQ NM27LC256Q250

    27lc64

    Abstract: 27lC256 27LC010 national semiconductor 27lc256 NM27LC512 J28CQ MBH32A C1995
    Text: NM27LC512 524 288-Bit 64k x 8 Low Current CMOS EPROM General Description Features The NM27LC512 is a 64k x 8 EPROM manufactured on a proven manufacturable CMOS process consuming extremely low current in both the active and standby modes The NM27LC512 consumes a mere 30 mW making it ideal


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    PDF NM27LC512 288-Bit NM27LC512 27lc64 27lC256 27LC010 national semiconductor 27lc256 J28CQ MBH32A C1995

    27LC512

    Abstract: 27lC256 C1995 national semiconductor 27lc256 TL 078
    Text: NM27LC64 65 536-Bit 8k x 8 Low Current CMOS EPROM General Description Features The NM27LC64 is a 8k x 8 EPROM manufactured on a proven manufacturable CMOS process consuming extremely low current in both the active and standby modes The NC27LC64 consumes a mere 12 5 mW (typical) in


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    PDF NM27LC64 536-Bit NM27LC64 NC27LC64 27LC512 27lC256 C1995 national semiconductor 27lc256 TL 078

    27lC256

    Abstract: NM27LC256 TVR 07 spec NM27LC512
    Text: May 1992 NM 27LC512 524,288-Bit 64k x 8 Low C urrent C M O S EP R O M General Description Features The NM27LC512 is a 64k x 8 EPROM manufactured on a proven, manufacturable CMOS process, consuming ex­ tremely low current In both the active and standby modes.


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    PDF NM27LC512 288-Bit NM27LC512 wh001 27lC256 NM27LC256 TVR 07 spec

    27LC256

    Abstract: 27LC64 NM27LC512
    Text: NM27LC512 E H N a tio n a l mm Semiconductor NM27LC512 524,288-Bit 64k x 8 Low Current CMOS EPROM General Description Features The NM27LC512 is a 64k x 8 EPROM manufactured on a proven, manufacturable CMOS process, consuming ex­ tremely low current In both the active and standby modes.


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    PDF NM27LC512 288-Bit bSD112b 27LC256 27LC64

    27lC256

    Abstract: 27LC64
    Text: NM27LC64 National Æm Semiconductor NM27LC64 65,536-Bit 8k x 8 Low Current CMOS EPROM General Description Features The NM27LC64 is a 8k x 8 EPROM manufactured on a proven, manufacturable CMOS process, consuming ex­ tremely low current in both the active and standby modes.


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    PDF NM27LC64 NM27LC64 536-Bit NC27LC64 bSD112b GD7115S 27lC256 27LC64

    27lC256

    Abstract: No abstract text available
    Text: June 1992 NM27LC64 65,536-Bit 8K x 8 Low Current CMOS EPROM General Description Features The NM27LC64 is a 8K x 8 EPROM manufactured on a proven, manufacturable CMOS process, consuming ex­ tremely low current in both the active and standby modes. The NC27LC64 consumes a mere 12.5 mW (typical) in


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    PDF NM27LC64 536-Bit NM27LC64 NC27LC64 S27-649 27lC256

    27lc64

    Abstract: NM27LC256 27LC512 NM27LC256QE200
    Text: PRELIMINARY June 1992 NM27LC256 262,144-Bit 32k x 8 Low Current CMOS EPROM General Description Features The NM27LC256 is a 32k x 8 EPROM manufactured on a proven, manufacturable CMOS process, consuming ex­ tremely low current in both the active and standby modes.


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    PDF NM27LC256 144-Bit NM27LC256 27lc64 27LC512 NM27LC256QE200