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    128KX Search Results

    128KX Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    128KXM010M Illinois Capacitor Capacitors - Aluminum Electrolytic Capacitors - CAP ALUM 1200UF 20% 10V T/H Original PDF
    128KXM035M Illinois Capacitor Capacitors - Aluminum Electrolytic Capacitors - CAP ALUM 1200UF 20% 35V T/H Original PDF
    128KXM050M Illinois Capacitor Capacitors - Aluminum Electrolytic Capacitors - CAP ALUM 1200UF 20% 50V T/H Original PDF
    128KXM6R3MLQ Illinois Capacitor Capacitors - Aluminum Electrolytic Capacitors - CAP ALUM 1200UF 20% 6.3V T/H Original PDF
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    128KX Price and Stock

    Cornell Dubilier Electronics Inc 128KXM050M

    CAP ALUM 1200UF 20% 50V RADIAL
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    DigiKey 128KXM050M Bulk 600
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    • 1000 $1.01
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    Mouser Electronics 128KXM050M
    • 1 -
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    • 1000 $0.883
    • 10000 $0.781
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    Cornell Dubilier Electronics Inc 128KXM035M

    CAP ALUM 1200UF 20% 35V RADIAL
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    DigiKey 128KXM035M Bulk 12,000
    • 1 -
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    Mouser Electronics 128KXM035M
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    Cornell Dubilier Electronics Inc 128KXM010M

    CAP ALUM 1200UF 20% 10V RADIAL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 128KXM010M Bulk
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    Cornell Dubilier Electronics Inc 128KXM6R3MLQ

    CAP ALUM 1200UF 20% 6.3V RADIAL
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    DigiKey 128KXM6R3MLQ Bulk
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    Displaytech Ltd 64128KX FC BW-3

    DISPLAY LCD 128X64 TRANSFL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 64128KX FC BW-3 Bulk 1
    • 1 $20.78
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    • 100 $13.1693
    • 1000 $12.09424
    • 10000 $12.09424
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    Mouser Electronics 64128KX FC BW-3 364
    • 1 $20.78
    • 10 $15.68
    • 100 $13.17
    • 1000 $12.68
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    128KX Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FM28V100-TG

    Abstract: FM28V100-TGTR tca 335 A
    Text: FM28V100 1Mbit Bytewide F-RAM Memory Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8  High Endurance 100 Trillion 1014 Read/Writes  NoDelay Writes  Page Mode Operation to 33MHz  Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM28V100 128Kx8 33MHz 128Kx8 32-pin FM28V100 FM28V100, FM28V100-TG A9482296TG FM28V100-TGTR tca 335 A

    IBM0418A41NLAB

    Abstract: IBM0418A81NLAB IBM0436A41NLAB IBM0436A81NLAB
    Text: IBM0436A41NLAB IBM0418A41NLAB IBM0418A81NLAB IBM0436A81NLAB 8Mb 256Kx36 & 512Kx18 and 4Mb (128Kx36 & 256Kx18) SRAM . Features • 8Mb: 256K x 36 or 512K x 18 organizations 4Mb: 128K x 36 or 256K x 18 organizations • Registered outputs • 30 Ω drivers


    Original     		PDF IBM0436A41NLAB IBM0418A41NLAB IBM0418A81NLAB IBM0436A81NLAB 256Kx36 512Kx18) 128Kx36 256Kx18) crrL3325 IBM0418A41NLAB IBM0436A81NLAB

    K7A401800B-QC

    Abstract: K7A401809B K7A401809B-QC K7A403200B-QC K7A403209B K7A403209B-QC K7A403609B K7B401825B-QC K7B403225B-QC
    Text: K7A403609B K7A403209B K7A401809B 128Kx36/x32 & 256Kx18 Synchronous SRAM Document Title 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM Revision History History Draft Date Remark 0.0 1. Initial draft May. 15. 2001 Preliminary 0.1 1. Changed DC parameters


    Original     		PDF K7A403609B K7A403209B K7A401809B 128Kx36/x32 256Kx18 128Kx36 128Kx32 256Kx18-Bit 570mA 490mA K7A401800B-QC K7A401809B K7A401809B-QC K7A403200B-QC K7A403209B K7A403209B-QC K7A403609B K7B401825B-QC K7B403225B-QC

    K7A401800B

    Abstract: K7A401800B-QC K7A401809B-QC K7A403200B K7A403200B-QC K7A403209B-QC K7A403600B K7B401825B-QC K7B403225B-QC
    Text: K7A403600B K7A403200B K7A401800B 128Kx36/x32 & 256Kx18 Synchronous SRAM Document Title 128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM Revision History History Draft Date Remark 0.0 1. Initial draft May. 15. 2001 Preliminary 0.1 1. Changed DC parameters


    Original     		PDF K7A403600B K7A403200B K7A401800B 128Kx36/x32 256Kx18 128Kx36 128Kx32 256Kx18-Bit 350mA 290mA K7A401800B K7A401800B-QC K7A401809B-QC K7A403200B K7A403200B-QC K7A403209B-QC K7A403600B K7B401825B-QC K7B403225B-QC

    IBM0418A8ACLAB

    Abstract: IBM0436A4ACLAB IBM0436A8ACLAB IBM0418A4ACLAB
    Text: . IBM0418A4ACLAB IBM0436A8ACLAB Preliminary IBM0418A8ACLAB IBM0436A4ACLAB 8Mb 256Kx36 & 512Kx18 and 4Mb (128Kx36 & 256Kx18) SRAM Features • 8Mb: 256K x 36 or 512K x 18 organizations 4Mb: 128K x 36 or 256K x 18 organizations • 0.25 Micron CMOS technology


    Original     		PDF IBM0418A4ACLAB IBM0436A8ACLAB IBM0418A8ACLAB IBM0436A4ACLAB 256Kx36 512Kx18) 128Kx36 256Kx18) crlh3320 IBM0418A8ACLAB IBM0436A4ACLAB IBM0436A8ACLAB IBM0418A4ACLAB

    K7N401801B

    Abstract: K7N403601B
    Text: K7N403601B K7N401801B 128Kx36 & 256Kx18 Pipelined NtRAMTM Document Title 128Kx36 & 256Kx18-Bit Pipelined NtRAMTM Revision History History Draft Date Remark 0.0 1. Initial document. May. 15. 2001 Preliminary 0.1 1. Changed DC parameters Icc ; from 350mA to 290mA at -16,


    Original     		PDF K7N403601B K7N401801B 128Kx36 256Kx18 256Kx18-Bit 350mA 290mA 330mA 270mA K7N401801B K7N403601B

    CY7C1350

    Abstract: IDT71V546 MCM63Z736
    Text: fax id: 1103 CY7C1350 PRELIMINARY 128Kx36 Pipelined SRAM with NoBL Architecture Features Functional Description • Pin compatible and functionally equivalent to ZBT devices IDT71V546, MT55L128L36P and MCM63Z736 • Supports 143-MHz bus operations with zero wait


    Original     		PDF CY7C1350 128Kx36 IDT71V546, MT55L128L36P MCM63Z736 143-MHz CY7C1350 IDT71V546 MCM63Z736

    IBM0418A4ANLAB

    Abstract: IBM0418A8ANLAB IBM0436A4ANLAB IBM0436A8ANLAB
    Text: . Preliminary IBM0418A4ANLAB IBM0418A8ANLAB IBM0436A8ANLAB IBM0436A4ANLAB 8Mb 256Kx36 & 512Kx18 and 4Mb (128Kx36 & 256Kx18) SRAM Features • 8Mb: 256K x 36 or 512K x 18 organizations 4Mb: 128K x 36 or 256K x 18 organizations • 0.25µ CMOS technology • Synchronous Register-Latch Mode of Operation


    Original     		PDF IBM0418A4ANLAB IBM0418A8ANLAB IBM0436A8ANLAB IBM0436A4ANLAB 256Kx36 512Kx18) 128Kx36 256Kx18) crlL3325 IBM0418A8ANLAB IBM0436A4ANLAB

    IBM0418A41XLAB

    Abstract: IBM0418A81XLAB IBM0436A41XLAB IBM0436A81XLAB
    Text: . Preliminary IBM0418A81XLAB IBM0436A81XLAB IBM0418A41XLAB IBM0436A41XLAB 8Mb 256Kx36 & 512Kx18 and 4Mb (128Kx36 & 256Kx18) SRAM Features • 8Mb: 256K x 36 or 512K x 18 organizations 4Mb: 128K x 36 or 256K x 18 organizations • 0.25 Micron CMOS technology


    Original     		PDF IBM0418A81XLAB IBM0436A81XLAB IBM0418A41XLAB IBM0436A41XLAB 256Kx36 512Kx18) 128Kx36 256Kx18) crrh2516 IBM0418A41XLAB IBM0418A81XLAB IBM0436A41XLAB IBM0436A81XLAB

    7C1351-40

    Abstract: 7C1351-50 7C1351-66 CY7C1351 IDT71V547 MCM63Z737
    Text: fax id: 1102 CY7C1351 PRELIMINARY 128Kx36 Flow-Through SRAM with NoBL Architecture Features Functional Description • Pin compatible and functionally equivalent to ZBT devices IDT71V547, MT55L128L36F and MCM63Z737 • Supports 66-MHz bus operations with zero wait states


    Original     		PDF CY7C1351 128Kx36 IDT71V547, MT55L128L36F MCM63Z737 66-MHz CY7C1351 7C1351-40 7C1351-50 7C1351-66 IDT71V547 MCM63Z737

    bq4013MA-120

    Abstract: bq4013Y bq4013YMA-120 bq4013
    Text: bq4013/Y 128Kx8 Nonvolatile SRAM Features General Description ➤ Data retention for at least 10 years without power The CMOS bq4013/Y is a nonvolatile 1,048,576-bit static RAM organized as 131,072 words by 8 bits. The integral control circuitry and lithium energy


    Original     		PDF bq4013/Y 128Kx8 576-bit 32-pin bq4013MA-120 bq4013Y bq4013YMA-120 bq4013

    FM18L08

    Abstract: FM20L08 FM20L08-60-TG
    Text: Preliminary FM20L08 1Mbit Bytewide FRAM Memory – Extended Temp. Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8 • Unlimited Read/Write Cycles • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM20L08 128Kx8 33MHz 128Kx8 FM18L08 FM20L08 FM20L08-60-TG

    alarm clock IC

    Abstract: bq4842y
    Text: bq4842Y RTC Module with 128Kx8 NVSRAM Features General Description >• I n te g r a t e d SRAM, re a l-tim e clock, CPU supervisor, crystal, pow er-fail control circuit, and battery The bq4842Y RTC Module is a non­ volatile 1,048,576-bit SRAM organ­ ized as 131,072 words by 8 bits with


    OCR Scan     		PDF bq4842Y 128Kx8 10-year 576-bit-up alarm clock IC

    TAA 310A

    Abstract: KM681000BLP-7L 128k x8 SRAM TSOP km681000blp-7 KM681000B KM681000BL KM681000BLE KM681000BL-L
    Text: KM681000B Family CMOS SRAM 128Kx8 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology: 0.6 um CMOS • Organization : 128K x 8 • Power Supply Voltage : Single 5V +/-10% • Low Data Retention Voltage : 2V Min • Three state output and TTL Compatible


    OCR Scan     		PDF KM681000B 128Kx8 0023b3? KM681OOOÃ 0D23b3Ã TAA 310A KM681000BLP-7L 128k x8 SRAM TSOP km681000blp-7 KM681000BL KM681000BLE KM681000BL-L

    Untitled

    Abstract: No abstract text available
    Text: CMOS STATIC RAM 1 MEG 128KX 8-BIT ADVANCE INFORMATION IDT71024 Integrated Device Technology, Inc. FEATURES: The IDT71024 uses eight bidirectional input/output lines to provide simultaneous access to all bits in a word and has an output enable (OE) pin which operates as fast as 15ns.


    OCR Scan     		PDF 128KX IDT71024 IDT71024

    Untitled

    Abstract: No abstract text available
    Text: \dt LOW POWER 2V CMOS SRAM 1 MEG 128KX 8-BIT) ADVANCE INFORMATION IDT71T024 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • • • • • • • The IDT71T024 is a 1,048,576-bit very low-power Static RAM organized as 128K x 8. It is fabricated using ID Ts highreliability CMOS technology. This state-of-the-art technology,


    OCR Scan     		PDF 128KX IDT71T024 IDT71T024 576-bit 71T024

    Untitled

    Abstract: No abstract text available
    Text: LOW POWER 2V CMOS SRAM 1 MEG 128KX 8-BIT ADVANCE INFORMATION IDT71T024 I n te g r a te d D e v iz e T e c h n o lo g y , l i e . FEATURES: DESCRIPTION: • 128K x 8 Organization • Wide Operating Voltage Range: 1.8V to 2.7V • Commercial (0° to 70°C) and Industrial (0° to 70°C)


    OCR Scan     		PDF 128KX IDT71T024 150ns, 200ns 10jxA 32-pin, 46-BALL IDT71T024 576-bit 10-338-207Q

    Untitled

    Abstract: No abstract text available
    Text: LOW POWER 3V CMOS SRAM 1 MEG 128Kx 8-BIT ADVANCE INFORMATION IDT71V024L Integrated D e v ic e T e ch n o lo g y, Inc. FEATURES: DESCRIPTION: • • • • • • • The ID T71V024L is a 1,048,576-bit very low-pow er Static RAM organized as 1 2 8 K x 8 . It is fabricated using ID T’s highreliability CMOS technology. This state-of-the-art technology,


    OCR Scan     		PDF 128Kx IDT71V024L T71V024L 576-bit 10-338-207Q

    Untitled

    Abstract: No abstract text available
    Text: H Y 6 2 8 1 0 0 A -I •HYUNDAI S e r ie s 128KX 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY628100A-I is a high-speed, low power and 131,072 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit


    OCR Scan     		PDF 128KX HY628100A-I 1DD03-11-MAY94 0Q037hD HY628100ALP-I HY628100ALLP-I HY628100ALG-I

    Untitled

    Abstract: No abstract text available
    Text: I = = = = •= Preliminary IBM0418A81QLAA IBM0418A41 QLAA IBM0436A81QLAA IBM0436A41QLAA 8Mb 256Kx36 & 512x18 and 4Mb (128Kx36 & 256Kx18) SRAM Features • 256K x 36 or 512K x 18 organizations • Registered Outputs • 128K x 36 or 256K x 18 organizations


    OCR Scan     		PDF IBM0418A81QLAA IBM0418A41 IBM0436A81QLAA IBM0436A41QLAA 256Kx36 512x18) 128Kx36 256Kx18)

    Untitled

    Abstract: No abstract text available
    Text: I = =• = Preliminary IBM0418A80QLAB IBM0418A40QLAB IBM0436A80QLAB IBM0436A40QLAB 8Mb 256Kx36 & 512x18 and 4Mb (128Kx36 & 256Kx18) SRAM Features • 256K x 36 or 512K x 18 Organizations • Registered Addresses, W rite Enables, Synchro­ nous Select, and Data Ins.


    OCR Scan     		PDF IBM0418A80QLAB IBM0418A40QLAB IBM0436A80QLAB IBM0436A40QLAB 256Kx36 512x18) 128Kx36 256Kx18)

    AB26S

    Abstract: 7C109A CY7C109 CY7C109A
    Text: CY7C109A PRELIMINARY l ^wSSQBBSf S S ySSt Ì p YJe JkP XRI- XjiïJF ^ 128KX 8 Static RAM Features Functional Description • H ighspeed The CY7C109A is a high-performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW chip enable


    OCR Scan     		PDF CY7C109A 128Kx CY7C109A AB26S 7C109A CY7C109

    68 1103

    Abstract: KM681000BL A14F
    Text: CMOS SRAM KM681000BL / L-L 128Kx8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION The KM 681000BUBL-L is a 1,048,576-bit high-speed Static Random Access Memory organized as131,072 words by 8 bits. The device is fabricated using Samsung's advanced


    OCR Scan     		PDF KM681000BL 128Kx8 385mW KM681OOOBLP/BLP-L 600mil) KM681000BLG/BLG-L: 525mil) KM681OOOBLT/BLT-L 0820F) KM681000BLR/BLR-L: 68 1103 A14F

    CY7C1009

    Abstract: 7C1009 A14C
    Text: PRELIMINARY r y f|pPA RJL- lrP Anni I CY7C1009 128Kx 8 Static RAM Features Functional Description • Highspeed — tAA = 12 ns • CMOS for optimum speed/power • Low active power — 1020 mW • Low standby power — 250 mW The CY7C1009 is a high-performance


    OCR Scan     		PDF CY7C1009 550-mil CY7C1009 7C1009 A14C