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    MARKING JBR Search Results

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    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    MARKING JBR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC3936G

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3936G Silicon NPN epitaxial planar type For high-frequency amplification • Features ■ Package • Code SMini3-F2 • Marking Symbol: K • Pin Name 1. Base 2. Emitter 3. Collector


    Original     		PDF 2002/95/EC) 2SC3936G 2SC3936G

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3936G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high-frequency amplification • Features ■ Package • Code SMini3-F2 • Marking Symbol: K • Pin Name


    Original     		PDF 2002/95/EC) 2SC3936G

    TRANSISTOR AH-16

    Abstract: TRANSISTOR bH-16 equivalent of transistor bc212 bc 214 transistor marking code SOT-23 2FX 2907A PNP bipolar transistors SILICON TRANSISTOR FS 2025 marking JV SOD323 bf245 replacement GI 312 diode msd601
    Text: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further


    Original     		PDF DL126/D Nov-2001 r14525 DL126 TRANSISTOR AH-16 TRANSISTOR bH-16 equivalent of transistor bc212 bc 214 transistor marking code SOT-23 2FX 2907A PNP bipolar transistors SILICON TRANSISTOR FS 2025 marking JV SOD323 bf245 replacement GI 312 diode msd601

    CBF493S

    Abstract: BC337 hie hre hfe BC449 equivalent transistor marking code SOT-23 2FX marking 513 SOD-323 bc213 equivalent MECL 10000 bc237c equivalent diode Marking code jv3 f BAV70 SOT-23 JJ
    Text: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further


    Original     		PDF DL126/D Nov-2001 r14525 DL126/D CBF493S BC337 hie hre hfe BC449 equivalent transistor marking code SOT-23 2FX marking 513 SOD-323 bc213 equivalent MECL 10000 bc237c equivalent diode Marking code jv3 f BAV70 SOT-23 JJ

    marking 513 SOD-323

    Abstract: transistor marking code SOT-23 2FX BC449 equivalent DTD113 BC548 hie hre hfe steel package MPSW45A replacement BC449A equivalent 2n4401 free transistor equivalent book power tmos BF256
    Text: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further


    Original     		PDF DL126/D Nov-2001 r14525 DL126/D marking 513 SOD-323 transistor marking code SOT-23 2FX BC449 equivalent DTD113 BC548 hie hre hfe steel package MPSW45A replacement BC449A equivalent 2n4401 free transistor equivalent book power tmos BF256

    2SA1022

    Abstract: 2SC2295
    Text: Transistor 2SC2295 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1022 Unit: mm +0.2 2.8 –0.3 0.65±0.15 1.45 0.95 1.5 –0.05 1 0.95 3 +0.1 +0.2 ● 2.9 –0.05 ● Optimum for RF amplification of FM/AM radios. High transition frequency fT.


    Original     		PDF 2SC2295 2SA1022 2SA1022 2SC2295

    2SC4655

    Abstract: No abstract text available
    Text: Transistor 2SC4655 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 1.6±0.15 0.4 +0.1 0.5 1 3 0.5 1.6±0.1 ● Optimum for RF amplification, oscillation, mixing, and IF of FM/ AM radios. SS-Mini type package, allowing downsizing of the equipment


    Original     		PDF 2SC4655 45MHz 2SC4655

    2SC3936

    Abstract: No abstract text available
    Text: Transistor 2SC3936 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 2.1±0.1 • Features 0.3–0 0.65 1 0.65 1.3±0.1 +0.1 0.425 3 Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage


    Original     		PDF 2SC3936 45MHz 2SC3936

    2SA1790

    Abstract: 2SC4626
    Text: Transistor 2SC4626 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1790 Unit: mm 1.6±0.15 0.4 +0.1 0.5 1 3 0.5 ● Optimum for RF amplification of FM/AM radios. High transition frequency fT. SS-Mini type package, allowing downsizing of the equipment


    Original     		PDF 2SC4626 2SA1790 100MHz 2SA1790 2SC4626

    sc 107 transistor

    Abstract: 2SC2778 npn, transistor, sc 107 b
    Text: Transistor 2SC2778 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm +0.2 2.8 –0.3 1.45 0.95 3 +0.1 +0.2 0.65±0.15 1 0.95 2.9 –0.05 ● 0.65±0.15 Optimum for RF amplification, oscillation, mixing, and IF of FM/ AM radios. Mini type package, allowing downsizing of the equipment and


    Original     		PDF 2SC2778 45MHz sc 107 transistor 2SC2778 npn, transistor, sc 107 b

    marking UD

    Abstract: 2SC4627
    Text: Transistor 2SC4627 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 1.6±0.15 0.4 +0.1 0.5 1 3 0.5 ● Optimum for RF amplification of FM/AM radios. High transition frequency fT. SS-Mini type package, allowing downsizing of the equipment


    Original     		PDF 2SC4627 100MHz marking UD 2SC4627

    2SC2404

    Abstract: No abstract text available
    Text: Transistor 2SC2404 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm +0.2 2.8 –0.3 0.65±0.15 1.45 0.95 1.5 –0.05 1 0.95 3 +0.1 +0.2 ● 2.9 –0.05 ● Optimum for RF amplification of FM/AM radios. High transition frequency fT.


    Original     		PDF 2SC2404 150MHz 2SC2404

    2SC3931

    Abstract: No abstract text available
    Text: Transistor 2SC3931 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 2.1±0.1 • Features +0.1 0.3–0 0.65 1.3±0.1 0.65 1 3 2 Symbol Ratings Unit VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 3 V


    Original     		PDF 2SC3931 100MHz 2SC3931

    2SA1532

    Abstract: 2SC3930
    Text: Transistor 2SC3930 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1532 Unit: mm 2.1±0.1 • Features +0.1 0.3–0 0.65 1.3±0.1 0.65 1 3 2 Symbol Ratings Unit VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage


    Original     		PDF 2SC3930 2SA1532 100MHz 2SA1532 2SC3930

    Untitled

    Abstract: No abstract text available
    Text: Transistor 2SC3932 Silicon NPN epitaxial planer type For high-frequency amplification/oscillation/mixing Unit: mm 2.1±0.1 • Features 0.425 0.3–0 0.65 1.3±0.1 +0.1 1.25±0.1 1 0.65 ● High transition frequency fT. S-Mini type package, allowing downsizing of the equipment and


    Original     		PDF 2SC3932 200MHz 900MHz 200MHz

    2SC2480

    Abstract: No abstract text available
    Text: Transistors 2SC2480 Silicon NPN epitaxial planer type Unit: mm For high-frequency amplification / oscillation / mixing 0.40+0.10 –0.05 0.16+0.10 –0.06 0.95 (0.95) 1.9±0.1 Rating Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO


    Original     		PDF 2SC2480 2SC2480

    GFB marking

    Abstract: 2SC3932
    Text: Transistors 2SC3932 Silicon NPN epitaxial planer type 0.425 Unit: mm For high-frequency amplification / oscillation / mixing 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5° 1.25±0.10 0.9+0.2 –0.1 • Features 0.9±0.1 3 1 2 0.2±0.1 • High transition frequency fT


    Original     		PDF 2SC3932 GFB marking 2SC3932

    dc ammeter circuit diagrams

    Abstract: JIS-C-5101-1 gold capacitor panasonic marking code capacitors capacitor panasonic GC series capacitor 2,2 nF thru hole capacitor package dc voltmeter circuit diagrams EECRG0V105H panasonic rg
    Text: To: DIGI-KEY Issue No. : 2007E077-2 Date of Issue : Nov. 28. 2007 Classification : New , Changed PRODUCT SPECIFICATION FOR APPROVAL Product Description Customer Part Number : Electric Double Layer Capacitor : Product Part Number EECRG0V105* （RG Series）


    Original     		PDF 2007E077-2 EECRG0V105* JB-RG-H-105 EECRG0V105H dc ammeter circuit diagrams JIS-C-5101-1 gold capacitor panasonic marking code capacitors capacitor panasonic GC series capacitor 2,2 nF thru hole capacitor package dc voltmeter circuit diagrams EECRG0V105H panasonic rg

    2SC3931

    Abstract: No abstract text available
    Text: Transistor 2SC3931 Silicon NPN epitaxial planer type For high-frequency amplification 0.425 Unit: mm +0.1 0.3Ð0.0 • Features 5û 1 2 0.2±0.1 ● Optimum for RF amplification of FM/AM radios. High transition frequency fT. S-Mini type package, allowing downsizing of the equipment and


    Original     		PDF 2SC3931 2SC3931

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3932G Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing • Features ■ Package • High transition frequency fT • S-Mini type package, allowing downsizing of the equipment


    Original     		PDF 2002/95/EC) 2SC3932G

    2SC2480

    Abstract: No abstract text available
    Text: Transistors 2SC2480 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 • High transition frequency fT • Mini type package, allowing downsizing of the equipment and


    Original     		PDF 2SC2480 2SC2480

    2SC2778

    Abstract: No abstract text available
    Text: Transistor 2SC2778 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 0.40+0.10 ñ0.05 0.4±0.2 5° 1.50+0.25 -0.05 2 1 0.95 (0.95) 1.9±0.1 (0.65) ● Optimum for RF amplification, oscillation, mixing, and IF of FM/ AM radios. Mini type package, allowing downsizing of the equipment and


    Original     		PDF 2SC2778 2SC2778

    HL6 marking

    Abstract: SMCJ HFR BA RT
    Text: World Products Inc. 19654 8th St. East, Sonoma, CA, USA, 95476 . . Phone: 707 996-5201 . . Fax: (707) 996-3380 TVS Diodes - Surface Mount - 3000 Watt Specifications - 3.0 SMCJ Series Electrical Characteristics 1 10/1000JJS ! jBreakdown Voltage jMaximumlMaximum j IO/IOOOjjs 1


    OCR Scan     		PDF 10/1000JJS 100lamping D0214AB UL94V-0 MIL-STD-750 HL6 marking SMCJ HFR BA RT

    KB 7780

    Abstract: SMAJ83 GE 43 TVS
    Text: World Products Inc. 19654 8th St. East, Sonoma, CA, USA, 95476 . . Phone: 707 996-5201 . . Fax: (707) 996-3380 TVS Diodes - Surface Mount - 400 Watt Specifications - SMAJ Series Electrical Characteristics j Part i| ! Part | I jl0 /1 0 0 0 jjs| | | jMaximumjMaximumj IO/IOOOjjs


    OCR Scan     		PDF