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    Panasonic Electronic Components 2SA1790JCL

    TRANS PNP 20V 0.03A SSMINI3
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    Panasonic Electronic Components 2SA1790GCL

    RF TRANS PNP 20V 300MHZ SSMINI3
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    DigiKey 2SA1790GCL Reel 3,000
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    2SA1790 Datasheets (18)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SA1790 Panasonic Silicon PNP epitaxial planer type Original PDF
    2SA1790 Panasonic PNP Transistor Original PDF
    2SA1790 Panasonic Silicon PNP epitaxial planer type Original PDF
    2SA1790 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SA1790 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    2SA1790 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SA1790 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SA1790 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA1790 Panasonic Transistor Selection Guide Scan PDF
    2SA1790B Panasonic Silicon PNP Epitaxial Planar Type Transistor Original PDF
    2SA1790B Panasonic Silicon PNP Epitaxial Planar Type Transistor Original PDF
    2SA1790C Panasonic Silicon PNP Epitaxial Planar Type Transistor Original PDF
    2SA1790C Panasonic Silicon PNP Epitaxial Planar Type Transistor Original PDF
    2SA1790GCL Panasonic RF Transistors (BJT), Discrete Semiconductor Products, TRANS PNP 20VCEO 30MA SSMINI-3 Original PDF
    2SA1790J Panasonic Silicon PNP epitaxial planar type Original PDF
    2SA1790JB Panasonic Silicon PNP Epitaxial Planar Type Transistor Original PDF
    2SA1790JC Panasonic Silicon PNP Epitaxial Planar Type Transistor Original PDF
    2SA1790JCL Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS PNP 20VCEO 30MA SSMINI-3 Original PDF

    2SA1790 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SA1790J

    Abstract: 2SC4626J SC-89
    Text: Transistors 2SA1790J For high-frequency amplification Complementary to 2SC4626J Unit: mm 1.60+0.05 –0.03 1.00±0.05 0.80±0.05 Silicon PNP epitaxial planar type 0.12+0.03 –0.01 0 to 0.02 0.50 (0.50) 5˚ Parameter Symbol Rating Unit VCBO −30 V Collector-emitter voltage (Base open)


    Original     		PDF 2SA1790J 2SC4626J 2SA1790J 2SC4626J SC-89

    2SA1790

    Abstract: 2SC4626 SC-75
    Text: Transistors 2SC4626 Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1790 Unit: mm 0.2+0.1 –0.05 0.15+0.1 –0.05 3 1˚ • Features Symbol Rating Unit VCBO 30 V Collector-emitter voltage Base open VCEO 20 V Emitter-base voltage (Collector open)


    Original     		PDF 2SC4626 2SA1790 SC-75 2SA1790 2SC4626 SC-75

    2SA1790

    Abstract: 2SC4626
    Text: Transistor 2SA1790 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC4626 Unit: mm 1.6±0.15 0.8±0.1 0.4 +0.1 0.5 1 3 0.5 1.6±0.1 ● High transition frequency fT. SS-Mini type package, allowing downsizing of the equipment


    Original     		PDF 2SA1790 2SC4626 2SA1790 2SC4626

    2SA1790

    Abstract: 2SC4626
    Text: Transistor 2SA1790 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC4626 Unit: mm 1.6±0.15 0.8±0.1 0.4 +0.1 0.5 1 3 0.5 1.6±0.1 ● High transition frequency fT. SS-Mini type package, allowing downsizing of the equipment


    Original     		PDF 2SA1790 2SC4626 2SA1790 2SC4626

    Untitled

    Abstract: No abstract text available
    Text: Transistors 2SC4626 Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1790 Unit: mm 0.2+0.1 –0.05 0.15+0.1 –0.05 3 Rating Unit VCBO 30 V Collector-emitter voltage Base open VCEO 20 V Emitter-base voltage (Collector open)


    Original     		PDF 2SC4626 2SA1790

    Untitled

    Abstract: No abstract text available
    Text: Transistors 2SA1790 Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SC4626 Unit: mm 0.15+0.1 –0.05 M Di ain sc te on na tin nc ue e/ d 0.2+0.1 –0.05 Rating Unit Collector-base voltage Emitter open VCBO −30 V Collector-emitter voltage (Base open)


    Original     		PDF 2SA1790 2SC4626

    2SA1790

    Abstract: 2SC4626 SC-75
    Text: Transistors 2SA1790 Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SC4626 Unit: mm 0.2+0.1 –0.05 0.15+0.1 –0.05 1˚ 3 • Absolute Maximum Ratings Ta = 25°C 2 0.3 1 (0.5) (0.5) 1.0±0.1 1.6±0.1 (0.4) • High transition frequency fT


    Original     		PDF 2SA1790 2SC4626 2SA1790 2SC4626 SC-75

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1790G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high-frequency amplification Complementary to 2SC4626G • Package • Optimum for RF amplification of FM/AM radios


    Original     		PDF 2002/95/EC) 2SA1790G 2SC4626G

    2SA1790G

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1790G Silicon PNP epitaxial planar type For high-frequency amplification Complementary to 2SC4626G • Package • Optimum for RF amplification of FM/AM radios • High transition frequency fT


    Original     		PDF 2002/95/EC) 2SA1790G 2SC4626G 2SA1790G

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1790J For high-frequency amplification Complementary to 2SC4626J Unit: mm 1.60+0.05 –0.03 M Di ain sc te on na tin nc ue e/ d 1.00±0.05 0.80±0.05 Silicon PNP epitaxial planar type


    Original     		PDF 2002/95/EC) 2SA1790J 2SC4626J

    2SA1790G

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1790G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high-frequency amplification Complementary to 2SC4626G • Features ue pl d in an c se ed lud pl vi


    Original     		PDF 2002/95/EC) 2SA1790G 2SC4626G 2SA1790G

    2SA179

    Abstract: 2SA1790J 2SC4626J SC-89
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1790J For high-frequency amplification Complementary to 2SC4626J Unit: mm 1.60+0.05 –0.03 M Di ain sc te on na tin nc ue e/ d 1.00±0.05 0.80±0.05 Silicon PNP epitaxial planar type


    Original     		PDF 2002/95/EC) 2SA1790J 2SC4626J 2SA179 2SA1790J 2SC4626J SC-89

    2SA1790

    Abstract: 2SC4626
    Text: Transistor 2SC4626 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1790 Unit: mm 0.2+0.1 –0.05 0.75±0.15 5˚ Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage


    Original     		PDF 2SC4626 2SA1790 2SA1790 2SC4626

    2SA1790J

    Abstract: 2SC4626J SC-89
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1790J For high-frequency amplification Complementary to 2SC4626J Unit: mm 1.60+0.05 –0.03 M Di ain sc te on na tin nc ue e/ d 1.00±0.05 0.80±0.05 Silicon PNP epitaxial planar type


    Original     		PDF 2002/95/EC) 2SA1790J 2SC4626J 2SA1790J 2SC4626J SC-89

    Untitled

    Abstract: No abstract text available
    Text: Transistors 2SA1790 Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SC4626 Unit: mm 0.2+0.1 –0.05 0.15+0.1 –0.05 • High transition frequency fT • SS-Mini type package allowing downsizing of the equipment and automatic insertion through the tape packing


    Original     		PDF 2SA1790 2SC4626

    2SA1790

    Abstract: 2SC4626
    Text: Transistor 2SC4626 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1790 Unit: mm 1.6±0.15 0.4 +0.1 0.5 1 3 0.5 ● Optimum for RF amplification of FM/AM radios. High transition frequency fT. SS-Mini type package, allowing downsizing of the equipment


    Original     		PDF 2SC4626 2SA1790 100MHz 2SA1790 2SC4626

    2SA1790

    Abstract: 2SC4626 SC-75
    Text: Transistors 2SA1790 Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SC4626 Unit: mm 0.15+0.1 –0.05 M Di ain sc te on na tin nc ue e/ d 0.2+0.1 –0.05 0.8±0.1 1.6±0.15 Collector-base voltage Emitter open Collector-emitter voltage (Base open)


    Original     		PDF 2SA1790 2SC4626 2SA1790 2SC4626 SC-75

    2SA1790

    Abstract: 2SC4626
    Text: Transistor 2SC4626 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1790 Unit: mm 1.6±0.15 0.4 +0.1 0.5 1 3 0.5 ● Optimum for RF amplification of FM/AM radios. High transition frequency fT. SS-Mini type package, allowing downsizing of the equipment


    Original     		PDF 2SC4626 2SA1790 2SA1790 2SC4626

    2SA1790

    Abstract: 2SC4626
    Text: Transistor 2SA1790 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC4626 Unit: mm 0.2+0.1 –0.05 • Features Symbol Ratings Unit VCBO –30 V Collector to emitter voltage VCEO –20 V Emitter to base voltage VEBO –5


    Original     		PDF 2SA1790 2SC4626 2SA1790 2SC4626

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1790J For high-frequency amplification Complementary to 2SC4626J Unit: mm 1.60+0.05 –0.03 1.00±0.05 0.80±0.05 Silicon PNP epitaxial planar type 0.12+0.03 –0.01 0 to 0.02 (0.50)(0.50)


    Original     		PDF 2002/95/EC) 2SA1790J 2SC4626J

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1790G Silicon PNP epitaxial planar type For high-frequency amplification Complementary to 2SC4626G • Features ■ Package • Optimum for RF amplification of FM/AM radios • High transition frequency fT


    Original     		PDF 2002/95/EC) 2SA1790G 2SC4626G

    2SA1790

    Abstract: 2SC4626 SC-75
    Text: Transistors 2SC4626 Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1790 M Di ain sc te on na tin nc ue e/ d Unit: mm 0.2+0.1 –0.05 0.15+0.1 –0.05 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l


    Original     		PDF 2SC4626 2SA1790 2SA1790 2SC4626 SC-75

    D1276A

    Abstract: B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A
    Text: Transistors Selèction Guide by Packages I SS Mini Type Packages (D1 ) \ Vceo(V) lc(mA) pc= i25mw 10 15 2SC4609 2SA1806 20 2SC4627 A 2SC5021 í 2SA1790 ' 2SC4626 2SC4655 15 30 50 80 100 , Preliminary 2SC4808 40 50 150 2SD2345 12SA1791 I 2SC4656 í 2SB1463


    OCR Scan     		PDF 2SC4609 2SC4808 2SA1806 2SC4627 2SA1790 2SC4626 2SC4655 2SD2345 2SC46 12SA1 D1276A B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A

    D1274A

    Abstract: B1317 C4714 D1707 b1108 c2258 transistor D2052 transistor transistor b1154 2sD2504 transistor B1398
    Text: Transistors Selection Guide by Packages • SS Mini Type Packages (D1) \ V C E 0 (V) 10 lc (mA) \ pc= i 25 mw 15 20 40 50 150 185 2SC4627 A 2SC5021 -2SA1790 >2SC4626 2SC4655 15 30 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 50 80 2SD2345 (2SA1791 i 2SC4656 2SC4691


    OCR Scan     		PDF 2SC4627 2SC5021 -2SA1790 2SC4626 2SC4655 2SC4809 2SC5295 2SC4808 2SA1806 2SD2345 D1274A B1317 C4714 D1707 b1108 c2258 transistor D2052 transistor transistor b1154 2sD2504 transistor B1398