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    Panasonic Electronic Components 2SA15320CL

    TRANS PNP 20V 0.03A SMINI3
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    DigiKey 2SA15320CL Reel 3,000
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    2SA1532 Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SA1532 Kexin Silicon PNP Epitaxial Planar Type Original PDF
    2SA1532 Panasonic PNP Transistor Original PDF
    2SA1532 Panasonic Silicon PNP epitaxial planer type Original PDF
    2SA1532 TY Semiconductor Silicon PNP Epitaxial Planar Type - SOT-323 Original PDF
    2SA1532 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    2SA1532 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SA1532 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SA1532 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA1532 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SA1532 Panasonic Transistor Selection Guide Scan PDF
    2SA15320CL Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS PNP 20VCEO 30MA SMINI-3P Original PDF
    2SA1532A Panasonic Silicon PNP Epitaxial Planar Type Transistor Original PDF
    2SA1532B Panasonic Silicon PNP Epitaxial Planar Type Transistor Original PDF
    2SA1532B Panasonic Silicon PNP Epitaxial Planar Type Transistor Original PDF
    2SA1532C Panasonic Silicon PNP Epitaxial Planar Type Transistor Original PDF
    2SA1532C Panasonic Silicon PNP Epitaxial Planar Type Transistor Original PDF

    2SA1532 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Product specification 2SA1532 Features High transition frequency fT. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -30 V Collector-emitter voltage VCEO -20 V Emitter-base voltage VEBO


    Original     		PDF 2SA1532

    2SA1532

    Abstract: 2SC3930
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3930 Silicon NPN epitaxial planar type Unit: mm (0.425) For high-frequency amplification Complementary to 2SA1532 M Di ain sc te on na tin nc ue e/ d 0.3+0.1 –0.0 0.15+0.10 –0.05


    Original     		PDF 2002/95/EC) 2SC3930 2SA1532 2SA1532 2SC3930

    2SA1532G

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3930G Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1532G • Package • Optimum for RF amplification of FM/AM radios • High transition frequency fT


    Original     		PDF 2002/95/EC) 2SC3930G 2SA1532G 2SA1532G

    2SA1532

    Abstract: 2SC3930
    Text: Transistor 2SA1532 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC3930 0.425 Unit: mm +0.1 0.3Ð0.0 • Features 5û High transition frequency fT. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine


    Original     		PDF 2SA1532 2SC3930 2SA1532 2SC3930

    2SA1532

    Abstract: 2SC3930
    Text: Transistors 2SC3930 Silicon NPN epitaxial planar type Unit: mm 0.425 For high-frequency amplification Complementary to 2SA1532 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5˚ 1.25±0.10 • Optimum for RF amplification of FM/AM radios • High transition frequency fT


    Original     		PDF 2SC3930 2SA1532 2SA1532 2SC3930

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1532 Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SC3930 (0.425) Unit: mm M Di ain sc te on na tin nc ue e/ d 0.3+0.1 –0.0 0.15+0.10 –0.05


    Original     		PDF 2002/95/EC) 2SA1532 2SC3930

    2SA1532G

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1532G Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SC3930G • Package • High transition frequency fT • S-Mini type package, allowing downsizing of the equipment and


    Original     		PDF 2002/95/EC) 2SA1532G 2SC3930G 2SA1532G

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1532 Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SC3930 (0.425) Unit: mm 0.3+0.1 –0.0 0.15+0.10 –0.05 1.25±0.10 2.1±0.1 0.9+0.2 –0.1


    Original     		PDF 2002/95/EC) 2SA1532 2SC3930

    hFE-50

    Abstract: 2SA1532
    Text: Transistors SMD Type Silicon PNP Epitaxial Planar Type 2SA1532 Features High transition frequency fT. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -30 V Collector-emitter voltage VCEO


    Original     		PDF 2SA1532 hFE-50 2SA1532

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3930G Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1532G • Features ■ Package • Optimum for RF amplification of FM/AM radios • High transition frequency fT


    Original     		PDF 2002/95/EC) 2SC3930G 2SA1532G

    2SA1532

    Abstract: 2SC3930
    Text: Transistor 2SC3930 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1532 Unit: mm 2.1±0.1 • Features +0.1 0.3–0 0.65 1.3±0.1 0.65 1 3 2 Symbol Ratings Unit VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage


    Original     		PDF 2SC3930 2SA1532 100MHz 2SA1532 2SC3930

    2SA1532

    Abstract: 2SC3930
    Text: Transistor 2SC3930 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1532 Unit: mm 2.1±0.1 • Features +0.1 0.3–0 0.65 1.3±0.1 0.65 1 3 2 Symbol Ratings Unit VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage


    Original     		PDF 2SC3930 2SA1532 2SA1532 2SC3930

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1532G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For low-frequency amplification Complementary to 2SC3930G • Package • High transition frequency fT


    Original     		PDF 2002/95/EC) 2SA1532G 2SC3930G

    2SA1532

    Abstract: 2SC3930
    Text: Transistor 2SC3930 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1532 0.425 Unit: mm +0.1 0.3Ð0.0 • Features 5û 1 2 0.2±0.1 ● Optimum for RF amplification of FM/AM radios. High transition frequency fT. S-Mini type package, allowing downsizing of the equipment and


    Original     		PDF 2SC3930 2SA1532 2SA1532 2SC3930

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3930G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high-frequency amplification Complementary to 2SA1532G • Package • Optimum for RF amplification of FM/AM radios


    Original     		PDF 2002/95/EC) 2SC3930G 2SA1532G

    S-Mini3-G1

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3930 Silicon NPN epitaxial planar type Unit: mm (0.425) For high-frequency amplification Complementary to 2SA1532 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5˚ 1.25±0.10 • Optimum for RF amplification of FM/AM radios


    Original     		PDF 2002/95/EC) 2SC3930 2SA1532 S-Mini3-G1

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1532 Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SC3930 (0.425) Unit: mm 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5° 1.25±0.10 0.9+0.2


    Original     		PDF 2002/95/EC) 2SA1532 2SC3930

    marking EB 202 transistor

    Abstract: 2SA1532 2SC3930
    Text: Transistor 2SA1532 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC3930 Unit: mm 2.1±0.1 • Features 0.425 0.3–0 0.65 1.3±0.1 +0.1 High transition frequency fT. S-Mini type package, allowing downsizing of the equipment and


    Original     		PDF 2SA1532 2SC3930 marking EB 202 transistor 2SA1532 2SC3930

    2SA1532

    Abstract: 2SC3930
    Text: Transistor 2SA1532 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC3930 Unit: mm 2.1±0.1 • Features 0.425 0.3–0 0.65 1.3±0.1 +0.1 High transition frequency fT. S-Mini type package, allowing downsizing of the equipment and


    Original     		PDF 2SA1532 2SC3930 2SA1532 2SC3930

    marking VB

    Abstract: NPN Silicon Epitaxial Planar Transistor 2SC3930W 2SA1532 marking code vc sot sot-323 transistor marking code 15 AM SOT-323
    Text: BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor FEATURES z High transition frequency fT. z Optimum for RF amplification of 2SC3930W Pb Lead-free FM/AM radios. z For high-frequency amplification complementary to 2SA1532.


    Original     		PDF 2SC3930W 2SA1532. OT-323 BL/SSSTF036 marking VB NPN Silicon Epitaxial Planar Transistor 2SC3930W 2SA1532 marking code vc sot sot-323 transistor marking code 15 AM SOT-323

    2SC3930G

    Abstract: 2SA1532G
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3930G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high-frequency amplification Complementary to 2SA1532G • Features ue pl d in an c se ed lud pl vi


    Original     		PDF 2002/95/EC) 2SC3930G 2SA1532G 2SC3930G 2SA1532G

    2SA1532G

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1532G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For low-frequency amplification Complementary to 2SC3930G • Features ue pl d in an c se ed lud pl vi


    Original     		PDF 2002/95/EC) 2SA1532G 2SC3930G 2SA1532G

    200MHZ

    Abstract: 2SA1532 2SC3930 100A 2MHZ
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors 2SC3930 SOT-323 TRANSISTOR NPN FEATURES z For high-frequency Amplification Complementary to 2SA1532 z Optimum for RF amplification of FM/AM radios z High transition frequency fT


    Original     		PDF OT-323 2SC3930 OT-323 2SA1532 200MHZ 200MHZ 2SA1532 2SC3930 100A 2MHZ

    2sc401

    Abstract: 2SA1532 2SC39 2SC3936 2SC40 2SC4011
    Text: - an H¡ 1 * * * 5È fê il •2SC3936 fâ T Ê : i*/Í¡ÉtÍfSffl V9 ' 2SA1532 # Ä : AM/FM 5 i 5* ® S& , RF tf* § , g j g , IF i# (g e * ® o • 2SC 3 9 3 7 : UHF Ä : feJT wim^ms, lA w W ttl, i a S f& fl a Vc e o (V ) 20 Ve b o (V) 5 tlFE ît


    OCR Scan     		PDF 2SC3936 2SA1532 200MHz 800MHz 2SC40 2sc401 2SA1532 2SC39 2SC4011