CAPACITOR marking code 2A
Abstract: CAPACITOR 560uf j 6.3 capacitor 220uF 63vdc capacitor color code CAPACITOR MARKING electrolytic capacitor date code capacitor 2.2uF 63vdc 1500uF 40VDC 150uf 450vdc capacitor 25 v 1000uF electrolytic capacitor
Text: 07/10 www.niccomp.com | Tech support: TPMG@niccomp.com COMPONENT MARKING SMT VERTICAL CAN ≥ 4mm Ø LIQUID ELECTROLYTE ALUMINUM ELECTROLYTIC CAPACITOR (MARKING SYSTEM EFFECTIVE OCTOBER 1999) YEAR CODE Example shown: NACZ102M6.3V8X10.5TR13F Produced May 2009
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NACZ102M6
3V8X10
5TR13F
CAPACITOR marking code 2A
CAPACITOR 560uf j 6.3
capacitor 220uF 63vdc
capacitor color code
CAPACITOR MARKING
electrolytic capacitor date code
capacitor 2.2uF 63vdc
1500uF 40VDC
150uf 450vdc capacitor
25 v 1000uF electrolytic capacitor
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TP0610K-T1-E
Abstract: TP0610K-T1-E3
Text: TP0610K Vishay Siliconix P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () VGS(th) (V) ID (mA) - 60 6 at VGS = - 10 V - 1 to - 3 - 185 TO-236 (SOT-23) G Marking Code: 6Kwll 6K = Part Number Code for TP0610K w = Week Code ll = Lot Traceability
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TP0610K
O-236
OT-23)
TP0610K
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
TP0610K-T1-E
TP0610K-T1-E3
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VISHAY SOT LOT CODE
Abstract: marking 6k sot-23 package sot23 footprint TP0610K-T1-E3
Text: TP0610K Vishay Siliconix P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () VGS(th) (V) ID (mA) - 60 6 at VGS = - 10 V - 1 to - 3 - 185 TO-236 (SOT-23) G Marking Code: 6Kwll 6K = Part Number Code for TP0610K w = Week Code ll = Lot Traceability
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TP0610K
O-236
OT-23)
TP0610K
2002/95/EC
11-Mar-11
VISHAY SOT LOT CODE
marking 6k sot-23 package
sot23 footprint
TP0610K-T1-E3
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Untitled
Abstract: No abstract text available
Text: TP0610K Vishay Siliconix P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () VGS(th) (V) ID (mA) - 60 6 at VGS = - 10 V - 1 to - 3 - 185 TO-236 (SOT-23) G Marking Code: 6Kwll 6K = Part Number Code for TP0610K w = Week Code ll = Lot Traceability
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TP0610K
O-236
OT-23)
TP0610K-T1-E3
TP0610K-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Si1304DL
Abstract: No abstract text available
Text: Si1304DL New Product Vishay Siliconix N-Channel 25-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.350 @ VGS = 4.5 V 0.75 0.450 @ VGS = 2.5 V 0.66 25 SOT-323 SC-70 (3-LEADS) G 1 S D KB XX YY Marking Code 3 Lot Traceability and Date Code 2 Part # Code
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Si1304DL
OT-323
SC-70
S-03474--Rev.
09-Apr-01
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Untitled
Abstract: No abstract text available
Text: Si1902DL Vishay Siliconix Dual N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.385 @ VGS = 4.5 V 0.70 0.630 @ VGS = 2.5 V 0.54 SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PA XX YY S1 Lot Traceability and Date Code
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Si1902DL
OT-363
SC-70
S-03969--Rev.
28-May-01
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P-Channel 1.8-V G-S MOSFET sot-323
Abstract: Si1305DL
Text: Si1305DL Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) -8 rDS(on) (W) ID (A) 0.280 @ VGS = - 4.5 V - 0.92 0.380 @ VGS = - 2.5 V - 0.79 0.530 @ VGS = - 1.8 V - 0.67 SOT-323 SC-70 (3-LEADS) G 1 S D LB XX YY Marking Code 3 Lot Traceability
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Si1305DL
OT-323
SC-70
S-03721--Rev.
07-Apr-03
P-Channel 1.8-V G-S MOSFET sot-323
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SI1303DL
Abstract: No abstract text available
Text: Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 20 rDS(on) (W) ID (A) 0.430 @ VGS = - 4.5 V - 0.72 0.480 @ VGS = - 3.6 V - 0.68 0.700 @ VGS = - 2.5 V - 0.56 SOT-323 SC-70 (3-LEADS) G 1 3 LA D XX YY Marking Code Lot Traceability
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Si1303DL
OT-323
SC-70
08-Apr-05
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Si1303DL
Abstract: 31 MOSFET sot-323
Text: Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 20 rDS(on) (W) ID (A) 0.430 @ VGS = - 4.5 V - 0.72 0.480 @ VGS = - 3.6 V - 0.68 0.700 @ VGS = - 2.5 V - 0.56 SOT-323 SC-70 (3-LEADS) G 1 3 LA D XX YY Marking Code Lot Traceability
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Si1303DL
OT-323
SC-70
S-03721--Rev.
07-Apr-03
31 MOSFET sot-323
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SI5461EDC
Abstract: No abstract text available
Text: Si5461EDC New Product Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.045 @ VGS = –4.5 V –6.2 –20 0.060 @ VGS = –2.5 V –5.4 0.082 @ VGS = –1.8 V –4.6 1206-8 ChipFET S 1 D D D D D D G S Marking Code LA
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Si5461EDC
S-03083--Rev.
12-Feb-01
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Si5465EDC
Abstract: siliconix
Text: Si5465EDC New Product Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY VDS (V) –12 rDS(on) (W) ID (A) 0.037 @ VGS = –4.5 V –7.0 0.048 @ VGS = –2.5 V –6.1 0.065 @ VGS = –1.8 V –5.2 S 1206-8 ChipFET 1 D D G 5.4 kW D D D D G S Marking Code
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Si5465EDC
S-03912--Rev.
21-May-01
siliconix
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Untitled
Abstract: No abstract text available
Text: Si5465EDC New Product Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.037 @ VGS = –4.5 V –7.0 –12 0.048 @ VGS = –2.5 V –6.1 0.065 @ VGS = –1.8 V –5.2 1206-8 ChipFET S 1 D D D D D D G S Marking Code 5.4 kW
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Si5465EDC
S-03191--Rev.
12-Mar-01
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Si5461EDC
Abstract: marking code LA
Text: Si5461EDC New Product Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (A) 0.045 @ VGS = –4.5 V –6.2 0.060 @ VGS = –2.5 V –5.4 0.082 @ VGS = –1.8 V –4.6 S 1206-8 ChipFET 1 D D G 5.4 kW D D D D G S Marking Code
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Si5461EDC
S-03968--Rev.
28-May-01
marking code LA
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Untitled
Abstract: No abstract text available
Text: Si2312DS New Product Vishay Siliconix N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.033 @ VGS = 4.5 V 4.9 0.040 @ VGS = 2.5 V 4.4 0.051 @ VGS = 1.8 V 3.9 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2312DS (C2)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Si2312DS
O-236
OT-23)
S-03082--Rev.
12-Feb-01
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Heat Shrink Termination Sleeves
Abstract: M81824 M83519 M83519 solder sleeve AS83519/1
Text: AS8351 9 / 1 a n d / 2 T yp e Heat Shrink termination hst sleeves for e m i s h ie l d to g ro und te r m inatio n JANUARY 2013 AS83519/1 and /2 Type heat shrink termination (hst) sleeves 5 sizes with and without wire leads R eliable termination of EMI/RFI shielding (to ground) in wire harness applications is universally accomplished with
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AS8351
AS83519/1
Heat Shrink Termination Sleeves
M81824
M83519
M83519 solder sleeve
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Sauro CTM
Abstract: Sauro CIF Sauro msb Sauro CIM CSM 6850 SMC072S045 SMC072 Sauro t011 Sauro Cvf
Text: Product Identification and related Part-Number Produktidentifizierung und entsprechende Artikelnummer To order a SAURO’s product, the Complete Part-Number must be identified. It is composed by a Standard Code and a potential Custom Code. Code structures are indicated in the below diagrams.
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MSBH02001
0000P_
ESA00000000
Sauro CTM
Sauro CIF
Sauro msb
Sauro CIM
CSM 6850
SMC072S045
SMC072
Sauro
t011
Sauro Cvf
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FET marking code g5d
Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .
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R09CL0001EJ0100
PX10727EJ02V0PF)
FET marking code g5d
PG2179TB
marking code C3E SOT-89
marking code C1E mmic
marking code C1G mmic
2SC3357/NE85634
PG2163T5N
sot-23 g6g
PC8230TU
marking code C1H mmic
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077-030
Abstract: No abstract text available
Text: AS83519/1 and/2 Type HST Sleeves 077-030 AS83519/2 Type Heat Shrink Termination HST Sleeves Pre-Installed Braid Pre-Tinned on Both Ends Thermal Indicator (Omit for None) Basic Part Number 077-030 03 T Size Table II P D B Dia A Dia Pre-Installed Braid Pre-Tinned Both Ends
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AS83519/1
AS83519/2
24-inches
077-030
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ST2303
Abstract: 30V 20A power p MOSFET
Text: ST2303 P Channel Enhancement Mode MOSFET -2.6A DESCRIPTION ST2303 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are
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ST2303
ST2303
OT-23-3L
-30V/-2
95m-ohm
125m-ohm
30V 20A power p MOSFET
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RK73-RT
Abstract: RK73G-RT WK73-RT hr r 681k- 1kv A/SG73P1E WK73S2 SG73S2E sec 472m sf MOS2CT52 RK73H-RT
Text: KOA SPEER ELECTRONICS, INC. passive components 199 Bolivar Drive Bradford, PA 16701 Phone: 814-362-5536 Fax: 814-362-8883 www.koaspeer.com KOA SPEER ELECTRONICS, INC. AHA 12/14 2.5M KOA Speer Electronics, Inc. Printed in U.S.A. passive components KOA Speer’s
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MARKING PARI SC70-6
Abstract: sot363 marking qs sm905
Text: SÌ1902DL Vishay Siliconix Dual N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS(V) Id r D S (o n) (£2) A V P (A) 0.385 e VGS = 4.5 V 0.70 0.630 9 VGS = 2.5 V 0.54 20 SOT-363 SC-70 (6-LEADS) Marking Code L otTraceability and Date Code L— Pari # Code Top View
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1902DL
OT-363
SC-70
S-99188--
01-Nov-99
MARKING PARI SC70-6
sot363 marking qs
sm905
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Untitled
Abstract: No abstract text available
Text: SÌ1304DL Vishay Siliconix New Product N-Channel 25-V D-S MOSFET PRODUCT SUM M ARY V u s (V ) rDS<on)(n ) I d (A ) 0.350 V GS = 4.5 V 0.75 0.450 @ VGg = 2.5 V 0.66 25 SOT-323 SC-70 (3-LEADS) g □: Marking Code KB XX £ I_ s [IT Lot Traceability and Date Code
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OCR Scan
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1304DL
OT-323
SC-70
S-03474--
09-Apr-01
SM304DL
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Pnp transistor smd ba rn
Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
Text: ont«* fj= !IS iìC O Ii ú U C i o y G o ï p . TH t N t x ï G é n é r a t i o n o í s m d M D 9 D A T 9 9 and ap iablished jality system f A . the Resign and Manufactu ~ d iscrete ^SeTOiCbiSuct audit as been fu rnlis ishh^ALth th a t tj tJ j A » q u ire le n ts according tj
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Q9001-1994i
CMSH1-20ML
Pnp transistor smd ba rn
transistor marking code 12W SOT-23
smd transistor marking p69
TRANSISTOR SMD MARKING CODE s2a
transistor smd bc rn
TRANSISTOR SMD MARKING CODE bc ru
1ff TRANSISTOR SMD MARKING CODE
smd transistor P2D
Motorola transistor smd marking codes
SMD TRANSISTOR MARKING P28
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7130-1 transistor
Abstract: TRANSISTOR mosfet SD 1074 marking code LG Si1301 RU4 diode SM035X
Text: SM035X_ Vishay Siliconix New Product Complementary N- and P-Channel 20-V D-S MOSFET TrenchFET PRODUCT SUMMARY M O SFETs V d s (V ) N-Channel P-Channel 20 -20 FEATURES rDS(on) ( ß ) lD (m A ) 5 @ VGs = 4.5 V 200
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SM035X_
S-02367--Rev.
23-Oct-OO
7130-1 transistor
TRANSISTOR mosfet SD 1074
marking code LG
Si1301
RU4 diode
SM035X
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