73005
Abstract: Si5465EDC
Text: SPICE Device Model Si5465EDC Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si5465EDC
18-Jul-08
73005
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Si5465EDC
Abstract: siliconix
Text: Si5465EDC New Product Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY VDS (V) –12 rDS(on) (W) ID (A) 0.037 @ VGS = –4.5 V –7.0 0.048 @ VGS = –2.5 V –6.1 0.065 @ VGS = –1.8 V –5.2 S 1206-8 ChipFET 1 D D G 5.4 kW D D D D G S Marking Code
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Si5465EDC
S-03912--Rev.
21-May-01
siliconix
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Untitled
Abstract: No abstract text available
Text: Si5465EDC New Product Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.037 @ VGS = –4.5 V –7.0 –12 0.048 @ VGS = –2.5 V –6.1 0.065 @ VGS = –1.8 V –5.2 1206-8 ChipFET S 1 D D D D D D G S Marking Code 5.4 kW
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Si5465EDC
S-03191--Rev.
12-Mar-01
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Si5465EDC
Abstract: No abstract text available
Text: Si5465EDC Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY VDS (V) -12 rDS(on) (Ω) ID (A) 0.037 @ VGS = -4.5 V -7.0 0.048 @ VGS = -2.5 V -6.1 0.065 @ VGS = -1.8 V -5.2 S 1206-8 ChipFETt 1 D D G 5.4 kΩ D D D D G S Marking Code LC XX Lot Traceability
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Si5465EDC
Si5465EDC-T1
S-21251--Rev.
05-Aug-02
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Si5465EDC
Abstract: 54kd
Text: Si5465EDC Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY VDS (V) -12 rDS(on) (Ω) ID (A) 0.037 @ VGS = -4.5 V -7.0 0.048 @ VGS = -2.5 V -6.1 0.065 @ VGS = -1.8 V -5.2 S 1206-8 ChipFETt 1 D D G 5.4 kΩ D D D D G S Marking Code LC XX Lot Traceability
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Si5465EDC
Si5465EDC-T1
18-Jul-08
54kd
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1.6562
Abstract: 16562 4717 AN609 Si5465EDC
Text: Si5465EDC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si5465EDC
AN609
20-Jun-07
1.6562
16562
4717
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Untitled
Abstract: No abstract text available
Text: Si5465EDC Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY VDS (V) -12 rDS(on) (Ω) ID (A) 0.037 @ VGS = -4.5 V -7.0 0.048 @ VGS = -2.5 V -6.1 0.065 @ VGS = -1.8 V -5.2 S 1206-8 ChipFETt 1 D D G 5.4 kΩ D D D D G S Marking Code LC XX Lot Traceability
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Si5465EDC
Si5465EDC-T1
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: Si5465EDC New Product Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.037 @ VGS = –4.5 V –7.0 –12 0.048 @ VGS = –2.5 V –6.1 0.065 @ VGS = –1.8 V –5.2 1206-8 ChipFET S 1 D D D D D D G S Marking Code 5.4 kW
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Si5465EDC
S-02662--Rev.
04-Dec-00
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GS 069
Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
Text: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no
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Si9165
Si9169
600-mA
TSSOP-20
MSOP-10
SiP1759
GS 069
Si5902DC SPICE Device Model
tsop6 marking 312
sC89-6
Si7705DN
SI7100DN
Si3865BDV
Si5947DU
Si3861BDV
1212-8
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