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    SI1902DL Price and Stock

    Vishay Siliconix SI1902DL-T1-GE3

    MOSFET 2N-CH 20V 0.66A SC70-6
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    DigiKey SI1902DL-T1-GE3 Cut Tape 27,256 1
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    SI1902DL-T1-GE3 Digi-Reel 27,155 1
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    SI1902DL-T1-GE3 Reel 24,000 3,000
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    Vishay Siliconix SI1902DL-T1-E3

    MOSFET 2N-CH 20V 0.66A SC70-6
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    DigiKey SI1902DL-T1-E3 Cut Tape 17,427 1
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    SI1902DL-T1-E3 Digi-Reel 17,427 1
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    SI1902DL-T1-E3 Reel 15,000 3,000
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    RS SI1902DL-T1-E3 Bulk 3,000
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    Bristol Electronics SI1902DL-T1-E3 806 9
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    Quest Components SI1902DL-T1-E3 644
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    New Advantage Corporation SI1902DL-T1-E3 6,000 1
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    Vishay Siliconix SI1902DL-T1-BE3

    MOSFET 2N-CH 20V 0.66A SC70-6
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    DigiKey SI1902DL-T1-BE3 Cut Tape 2,964 1
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    SI1902DL-T1-BE3 Digi-Reel 2,964 1
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    SI1902DL-T1-BE3 Reel 3,000
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    Vishay Intertechnologies SI1902DL-T1-GE3

    Transistor MOSFET Array Dual N-CH 20V 0.66A 6-Pin SC-70 T/R - Tape and Reel (Alt: SI1902DL-T1-GE3)
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    Avnet Americas SI1902DL-T1-GE3 Reel 6,000 3,000
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    Newark SI1902DL-T1-GE3 Reel 3,000
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    SI1902DL-T1-GE3 Reel 3,000
    • 1 $0.201
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    SI1902DL-T1-GE3 Cut Tape 3,000
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    TTI SI1902DL-T1-GE3 Reel 3,000 3,000
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    TME SI1902DL-T1-GE3 3
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    Chip1Stop SI1902DL-T1-GE3 3,000
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    EBV Elektronik SI1902DL-T1-GE3 7 Weeks 3,000
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    Vishay Intertechnologies SI1902DL-T1-E3

    Transistor MOSFET Array Dual N-CH 20V 0.66A 6-Pin SC-70 T/R - Product that comes on tape, but is not reeled (Alt: 06J7550)
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    Avnet Americas SI1902DL-T1-E3 Ammo Pack 8 Weeks, 1 Days 1
    • 1 $0.521
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    SI1902DL-T1-E3 Reel 3,000
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    Newark SI1902DL-T1-E3 Cut Tape 4,500 1
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    SI1902DL-T1-E3 Reel 3,000
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    Bristol Electronics SI1902DL-T1-E3 1,179
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    Quest Components SI1902DL-T1-E3 152
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    TTI SI1902DL-T1-E3 Reel 9,000 3,000
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    TME SI1902DL-T1-E3 1
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    Avnet Asia SI1902DL-T1-E3 8 Weeks 3,000
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    Chip1Stop SI1902DL-T1-E3 27,000
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    SI1902DL-T1-E3 6,000
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    SI1902DL-T1-E3 100
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    EBV Elektronik SI1902DL-T1-E3 7 Weeks 3,000
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    Find more SI1902DL price and stock on Findchips.com

    SI1902DL Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Si1902DL Vishay Intertechnology Dual N-Channel 20-V (D-S) MOSFET Original PDF
    SI1902DL Vishay Siliconix Dual N-Channel 20-V (D-S) MOSFET Original PDF
    Si1902DL SPICE Device Model Vishay Dual N-Channel 2.5-V (G-S) MOSFET Original PDF
    SI1902DL-T1-BE3 Vishay Siliconix MOSFET 2N-CH 20V 0.66A SC-70-6 Original PDF
    SI1902DL-T1-E3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 20V 660MA SC70-6 Original PDF
    SI1902DL-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 20V 660MA SC-70-6 Original PDF

    SI1902DL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si1902DL-T1-E3

    Abstract: Si1902DL Si1902DL-T1-GE3
    Text: Si1902DL Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.385 at VGS = 4.5 V 0.70 0.630 at VGS = 2.5 V 0.54 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs: 2.5 V Rated


    Original     		PDF Si1902DL 2002/95/EC OT-363 SC-70 Si1902DL-T1-E3 Si1902DL-T1-GE3 18-Jul-08

    71080

    Abstract: Si1902DL
    Text: Si1902DL Vishay Siliconix Dual N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.385 @ VGS = 4.5 V 0.70 0.630 @ VGS = 2.5 V 0.54 SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PA XX YY S1 Lot Traceability and Date Code


    Original     		PDF Si1902DL OT-363 SC-70 S-20880--Rev. 10-Jun-02 71080

    Untitled

    Abstract: No abstract text available
    Text: Si1902DL Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.385 @ VGS = 4.5 V 0.70 0.630 @ VGS = 2.5 V 0.54 • TrenchFET Power MOSFETS: 2.5-V Rated Pb-free Available RoHS* COMPLIANT SOT-363 SC-70 (6-LEADS)


    Original     		PDF Si1902DL OT-363 SC-70 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: Si1902DL Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.385 at VGS = 4.5 V 0.70 0.630 at VGS = 2.5 V 0.54 • TrenchFET Power MOSFETS: 2.5 V Rated Pb-free Available RoHS* COMPLIANT SOT-363 SC-70 (6-LEADS)


    Original     		PDF Si1902DL OT-363 SC-70 Si1902DL-T1 Si1902DL-T1-E3 08-Apr-05

    si1902dl

    Abstract: No abstract text available
    Text: Si1902DL Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.385 @ VGS = 4.5 V 0.70 0.630 @ VGS = 2.5 V 0.54 • TrenchFET Power MOSFETS: 2.5-V Rated Pb-free Available RoHS* COMPLIANT SOT-363 SC-70 (6-LEADS)


    Original     		PDF Si1902DL OT-363 SC-70 S-51415 01-Aug-05

    SI1902DL-T1-E3

    Abstract: Si1902DL Si1902DL-T1
    Text: Si1902DL Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.385 at VGS = 4.5 V 0.70 0.630 at VGS = 2.5 V 0.54 • TrenchFET Power MOSFETS: 2.5 V Rated Pb-free Available RoHS* COMPLIANT SOT-363 SC-70 (6-LEADS)


    Original     		PDF Si1902DL OT-363 SC-70 Si1902DL-T1 Si1902DL-T1-E3 08-Apr-05

    MARKING 518c

    Abstract: No abstract text available
    Text: Si1902DL Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (A) 0.385 at VGS = 4.5 V 0.70 0.630 at VGS = 2.5 V 0.54 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs: 2.5 V Rated


    Original     		PDF Si1902DL 2002/95/EC OT-363 SC-70 Si1902DL-T1-E3 Si1902DL-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. MARKING 518c

    Si1902DL SOT-363

    Abstract: marking code pa Si1902DL "marking code PA"
    Text: Si1902DL Vishay Siliconix Dual N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.385 @ VGS = 4.5 V 0.70 0.630 @ VGS = 2.5 V 0.54 SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PA XX YY S1 Lot Traceability and Date Code


    Original     		PDF Si1902DL OT-363 SC-70 S-21374--Rev. 12-Aug-02 Si1902DL SOT-363 marking code pa "marking code PA"

    Untitled

    Abstract: No abstract text available
    Text: Si1902DL New Product Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.385 @ VGS = 4.5 V "0.70 0.630 @ VGS = 2.5 V "0.54 SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PA XX YY S1 Lot Traceability


    Original     		PDF Si1902DL OT-363 SC-70 S-99185--Rev. 01-Nov-99

    Si1902DL-T1-E3

    Abstract: Si1902DL-T1-GE3 Si1902DL
    Text: Si1902DL Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.385 at VGS = 4.5 V 0.70 0.630 at VGS = 2.5 V 0.54 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs: 2.5 V Rated


    Original     		PDF Si1902DL 2002/95/EC OT-363 SC-70 Si1902DL-T1-E3 Si1902DL-T1-GE3 11-Mar-11

    Si1902DL

    Abstract: 71590
    Text: SPICE Device Model Si1902DL Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si1902DL 19-Nov-99 71590

    Untitled

    Abstract: No abstract text available
    Text: Si1902DL Vishay Siliconix Dual N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.385 @ VGS = 4.5 V 0.70 0.630 @ VGS = 2.5 V 0.54 SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PA XX YY S1 Lot Traceability and Date Code


    Original     		PDF Si1902DL OT-363 SC-70 S-03969--Rev. 28-May-01

    SI1902CDL

    Abstract: Specification Comparison SI1902DL-T1-E3
    Text: Specification Comparison www.vishay.com Vishay Siliconix Si1902CDL vs. Si1902DL Description: Package: Pin Out: Dual N-Channel, 20 V D-S MOSFET SC70-6 Identical Part Number Replacements: Si1902CDL-T1-GE3 Replaces Si1902DL-T1-E3 Si1902CDL-T1-GE3 Replaces Si1902DL-T1-GE3


    Original     		PDF Si1902CDL Si1902DL SC70-6 Si1902CDL-T1-GE3 Si1902DL-T1-E3 Si1902DL-T1-GE3 Specification Comparison

    Si1902DL

    Abstract: Si1902DL-T1 Si1902DL-T1-E3
    Text: Si1902DL Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.385 at VGS = 4.5 V 0.70 0.630 at VGS = 2.5 V 0.54 • TrenchFET Power MOSFETS: 2.5 V Rated Pb-free Available RoHS* COMPLIANT SOT-363 SC-70 (6-LEADS)


    Original     		PDF Si1902DL OT-363 SC-70 Si1902DL-T1 Si1902DL-T1-E3 18-Jul-08

    Si1902DL

    Abstract: S-50232
    Text: SPICE Device Model Si1902DL Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si1902DL 18-Jul-08 S-50232

    AN609

    Abstract: Si1902DL
    Text: Si1902DL_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si1902DL AN609 14-Nov-05

    71080

    Abstract: Si1902DL SOT-363 Si1902DL
    Text: Si1902DL New Product Vishay Siliconix Dual N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.385 @ VGS = 4.5 V 0.70 0.630 @ VGS = 2.5 V 0.54 SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PA XX YY S1 Lot Traceability


    Original     		PDF Si1902DL OT-363 SC-70 S-02367--Rev. 23-Oct-00 71080 Si1902DL SOT-363

    Untitled

    Abstract: No abstract text available
    Text: Si1902DL Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (A) 0.385 at VGS = 4.5 V 0.70 0.630 at VGS = 2.5 V 0.54 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs: 2.5 V Rated


    Original     		PDF Si1902DL 2002/95/EC OT-363 SC-70 Si1902DL-T1-E3 Si1902DL-T1-GE3 11-Mar-11

    marking 6pin

    Abstract: No abstract text available
    Text: Si1902DL Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.385 at VGS = 4.5 V 0.70 0.630 at VGS = 2.5 V 0.54 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs: 2.5 V Rated


    Original     		PDF Si1902DL 2002/95/EC OT-363 SC-70 Si1902DL-T1-E3 Si1902DL-T1-GE3 11-Mar-11 marking 6pin

    SI1902DL-T1

    Abstract: No abstract text available
    Text: Si1902DL Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.385 @ VGS = 4.5 V 0.70 0.630 @ VGS = 2.5 V 0.54 D TrenchFETr Power MOSFET: 2.5-V Rated Available COMPLIANT SOT-363 SC-70 (6-LEADS) 1 6 D1 G1


    Original     		PDF Si1902DL OT-363 SC-70 Si1902DL-T1 Si1902DL-T1--E3 S-51047--Rev. 30-May-05

    NH82801GB

    Abstract: NH82801GBM Intel NH82801GBM SL2501 sl8yb QG82945GM SL8Z2 LCD Inverter board s6f JP5000 M38857HP asus
    Text: 5 4 3 2 1 PROJECT S6F D D Revision History R1.0 SR 2005/07/01 R1.1 ER 2005/11/25 R2.0 PR 2005/01/18 SMB Signals C Host Chipset Name Devices SMBCK,SMBDA Address ICH7-M ADT7460 Thermal ICS954213(Clock Genertor) DDR2 SO-DIMM C 0001 000X b 0101 110X b D2h A0h


    Original     		PDF ADT7460 ICS954213 PM667 01G011010110 01G011010010 02G010009210 02G010007741 QG82945GM NH82801GBM NH82801GB Intel NH82801GBM SL2501 sl8yb QG82945GM SL8Z2 LCD Inverter board s6f JP5000 M38857HP asus

    ITE 8511

    Abstract: ITE8511 C6290 U606-3 C-6533 C6384 asus u6042 B C6113 U6048
    Text: 5 4 3 2 1 T76S: MEROM/965-PM/ICH8-M/NB8M-SE BLOCK DIAGRAM CLOCK GEN. ICS9LPR363CGLF-T GDDR2 VRAM*4 16X16 D Merom PAGE 21 D 478B uFCPGA FAN + Thermal sensor 84 FBGA PAGE 51 PAGE 3,4,5 PAGE 36 FSB 800 MHz LVDS nVIDIA NB8M-SE PAGE 34 CRT PAGE 35 533 BGA POWER


    Original     		PDF MEROM/965-PM/ICH8-M/NB8M-SE 16X16) ICS9LPR363CGLF-T 965PM 667MHz RTL8111B ALC660D PMN45EN FDW2501 MAX8632 ITE 8511 ITE8511 C6290 U606-3 C-6533 C6384 asus u6042 B C6113 U6048

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    MARKING PARI SC70-6

    Abstract: sot363 marking qs sm905
    Text: SÌ1902DL Vishay Siliconix Dual N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS(V) Id r D S (o n) (£2) A V P (A) 0.385 e VGS = 4.5 V 0.70 0.630 9 VGS = 2.5 V 0.54 20 SOT-363 SC-70 (6-LEADS) Marking Code L otTraceability and Date Code L— Pari # Code Top View


    OCR Scan     		PDF 1902DL OT-363 SC-70 S-99188-- 01-Nov-99 MARKING PARI SC70-6 sot363 marking qs sm905