rlr20
Abstract: GF-55 RG-07 marking code gf IRC GS-3 TO t955
Text: PRECISION NON MILITARY METAL GLAZE RESISTORS ISO-9001 Registered Spiraled or laser helixed to resistance value, tolerance RG SERIES Digital or color code marking High temperature soldered termination-lead assembly Tough molded jacket. RG 1/8 types have glass-filled conformal jacket
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ISO-9001
O-501
T2-501
T9-501
TF-051
TF-07
TF-20
GF-55
GF-07
GF-60
rlr20
GF-55
RG-07
marking code gf
IRC GS-3 TO
t955
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IRC GS-3 TO
Abstract: marking code GS3 T2-55 750 IRC GS-3 RG201 RG07 RG20 TF-051
Text: ISO-9001 Registered PRECISION NON MILITARY METAL GLAZE RESISTORS Spiraled or laser helixed to resistance value, tolerance RG SERIES • • • • Digital or color code marking High temperature soldered termination-lead assembly Tough molded jacket. RG 1/8 types
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ISO-9001
IRC GS-3 TO
marking code GS3
T2-55 750
IRC GS-3
RG201
RG07
RG20
TF-051
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Untitled
Abstract: No abstract text available
Text: PD -97450 IRFH5004PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) Qg (typical) RG (typical) ID 40 V 2.6 mΩ 73 1.2 nC 100 (@Tc(Bottom) = 25°C) Ω h A PQFN 5X6 mm Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors
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IRFH5004PbF
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IRFH5004TR2PBF
Abstract: AN-1154 IRFH5004TRPBF
Text: PD -97450 IRFH5004PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) Qg (typical) RG (typical) ID 40 V 2.6 mΩ 73 1.2 nC 100 (@Tc(Bottom) = 25°C) Ω h A PQFN 5X6 mm Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors
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IRFH5004PbF
IRFH5004TR2PBF
AN-1154
IRFH5004TRPBF
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Untitled
Abstract: No abstract text available
Text: PD -97450A IRFH5004PbF HEXFET Power MOSFET V DS 40 V R DS on max 2.6 m Qg (typical) 73 nC R G (typical) 1.2 (@VGS = 10V) ID 100 (@Tmb = 25°C) h A PQFN 5X6 mm Applications •Secondary Side Synchronous Rectification Inverters for DC Motors
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-97450A
IRFH5004PbF
IRFH5004PBF
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Untitled
Abstract: No abstract text available
Text: IRFH5004PbF HEXFET Power MOSFET V DS 40 V R DS on max 2.6 mΩ Qg (typical) 73 nC R G (typical) 1.2 Ω (@VGS = 10V) ID 100 (@Tmb = 25°C) h A PQFN 5X6 mm Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications
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IRFH5004PbF
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Untitled
Abstract: No abstract text available
Text: DMN3110S N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON max ID max TA = +25°C 73mΩ @ VGS = 10V 3.3A 110mΩ @ VGS = 4.5V 2.7A V(BR)DSS NEW PRODUCT Features and Benefits • 30V Low On-Resistance Low Input Capacitance Fast Switching Speed
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DMN3110S
AEC-Q101
DS31561
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DS35364
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated DMP21D0UFD 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(on) Max -20V 495mΩ @ VGS = -4.5V 730mΩ @ VGS = -2.5V 960mΩ @ VGS = -1.8V 1300mΩ @ VGS = -1.5V • • • • •
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DMP21D0UFD
1300m
AEC-Q101
DS35364
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated DMP21D0UFD 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • ID max TA = 25°C RDS(on) Max (Notes 4) 495mΩ @ VGS= -4.5V -1.14A 730mΩ @ VGS= -2.5V -0.94A 960mΩ @ VGS=-1.8V
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DMP21D0UFD
1300m
AEC-Q101
X1-DFN1212-3
J-STD-020
DS35364
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated DMP21D0UFD 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(on) Max -20V 495mΩ @ VGS = -4.5V 730mΩ @ VGS = -2.5V 960mΩ @ VGS = -1.8V 1300mΩ @ VGS = -1.5V • • • • •
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DMP21D0UFD
1300mÎ
AEC-Q101
DS35364
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Untitled
Abstract: No abstract text available
Text: IRF7380PbF-1 HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) Qg (typical) ID 80 V 73 15 S1 1 8 D1 mΩ G1 2 7 D1 nC S2 3 6 D2 G2 4 5 D2 3.6 (@TA = 25°C) A SO-8 Top View Applications l High frequency DC-DC converters Features Industry-standard pinout SO-8 Package
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IRF7380PbF-1
IRF73e
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EIA-541
Abstract: IRF7101 PN channel MOSFET 10A
Text: PD - 96132B IRF7380QPbF l l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance N Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free VDSS RDS on max 73m:@VGS = 10V 80V 1 8 D1 G1 2 7
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96132B
IRF7380QPbF
EIA-541
IRF7101
PN channel MOSFET 10A
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Untitled
Abstract: No abstract text available
Text: IRF7380QPbF l l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance N Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free VDSS RDS on max 73m:@VGS = 10V 80V 1 8 D1 G1 2 7 D1 S2 3 6 D2
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IRF7380QPbF
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SL4B
Abstract: FD059
Text: PD - 95643A IRGB4B60KPbF IRGS4B60KPbF IRGSL4B60KPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.
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5643A
IRGB4B60KPbF
IRGS4B60KPbF
IRGSL4B60KPbF
O-220
IRGB4B60KPbF
O-262
AN-994.
SL4B
FD059
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IRFU1N60A
Abstract: EIA-541 IRFR120 IRFR1N60A IRFU120 4.5v to 100v input regulator
Text: PD - 91846B SMPS MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptable Power Supply l Power Factor Correction Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and
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91846B
IRFR1N60A
IRFU1N60A
AN-994.
IRFU1N60A
EIA-541
IRFR120
IRFR1N60A
IRFU120
4.5v to 100v input regulator
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Untitled
Abstract: No abstract text available
Text: PD - 95643A IRGB4B60KPbF IRGS4B60KPbF IRGSL4B60KPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.
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5643A
IRGB4B60KPbF
IRGS4B60KPbF
IRGSL4B60KPbF
O-220
O-262
IRGS4B60KPbF
AN-994.
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C-150
Abstract: IRF1010 IRF530S IRGB4B60K IRGS4B60K IRGSL4B60K diode 68A VGE15V
Text: PD - 94633A IRGB4B60K IRGS4B60K IRGSL4B60K INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C.
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4633A
IRGB4B60K
IRGS4B60K
IRGSL4B60K
O-220
O-262
AN-994.
C-150
IRF1010
IRF530S
IRGB4B60K
IRGS4B60K
IRGSL4B60K
diode 68A
VGE15V
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Untitled
Abstract: No abstract text available
Text: PPJA3405 30V P-Channel Enhancement Mode MOSFET Voltage -30 V -3.6A Current SOT-23 Unit: inch mm Features RDS(ON) , VGS@-10V, ID@-3.6A<73mΩ RDS(ON) , VGS@-4.5V, ID@-2.4A<97mΩ Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application, etc
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PPJA3405
OT-23
2011/65/EU
IEC61249
OT-23
MIL-STD-750,
2014-REV
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c639
Abstract: c33840 transistor C639 c33725 c877 C63716 marking code 67a sot23 6 c878 c33740 F423
Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04 BAR 64-05
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3-03W
4-03W
5-03W
OD-123
OD-323
OT-23
c639
c33840
transistor C639
c33725
c877
C63716
marking code 67a sot23 6
c878
c33740
F423
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C-150
Abstract: IRGS4B60K IRGSL4B60K
Text: PD - 95643 IRGB4B60KPbF IRGS4B60K IRGSL4B60K INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C.
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IRGB4B60KPbF
IRGS4B60K
IRGSL4B60K
O-220
O-220
IRGB4B60KPbF
O-262
AN-994.
C-150
IRGS4B60K
IRGSL4B60K
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C-150
Abstract: IRF1010 IRF530S IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1
Text: PD - 94607 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 C VCES = 600V Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.
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IRGB4B60KD1
IRGS4B60KD1
IRGSL4B60KD1
O-220
IRGB4B60KD1
O-262
AN-994.
FD059H06A5.
C-150
IRF1010
IRF530S
IRGS4B60KD1
IRGSL4B60KD1
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C-150
Abstract: IRF1010 IRF530S IRGB4B60K IRGS4B60K IRGSL4B60K
Text: PD - 94633A IRGB4B60K IRGS4B60K IRGSL4B60K INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C.
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4633A
IRGB4B60K
IRGS4B60K
IRGSL4B60K
O-220
O-262
AN-994.
C-150
IRF1010
IRF530S
IRGB4B60K
IRGS4B60K
IRGSL4B60K
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TF-07
Abstract: No abstract text available
Text: PRECISION NON MILITARY METAL GLAZE RESISTORS RG -Spiralled or laser helixed to resistance value, tolerance — Digital or color code marking High temperature soldered termination-lead assembly SERIES Tough molded jacket. RG 1/8 types have glass-filled conformai jacket
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OCR Scan
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PDF
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T2-501
T9-501
TF-05'
TF-07
TF-20
GF-55
GF-07
GF-60
GF-20
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c639
Abstract: C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN
Text: SIEMENS Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04
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OCR Scan
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3-03W
4-03W
5-03W
OD-123
OD-323
OT-23
c639
C63716
C337 40
sot-23 MARKING 636
MARKING 68W SOT-23
C-639
F959
sot143 Marking code 5B
B304A
sot-89 MARKING CODE BN
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