Untitled
Abstract: No abstract text available
Text: 27.90 0.50 PGA73-C-S11U-2.54 1 4.46 0.40 INDEX MARK 2.54 5 0.46 0.05 3.40 0.40 1.20 0.30 SEATING PLANE 0.25 M
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PGA73-C-S11U-2
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Untitled
Abstract: No abstract text available
Text: Mar. / 2007 Ver2.0 TDK Corporation MULTILAYER LOW PASS FILTER P/N: DEA102500LT-6307A1 [MECHANICAL DIMENSIONS] L T 4 (3) (1) a2 W c1 Pin function (1) IN (2) GND (3) OUT (4) GND (2) Mark L W T a1 c2 b a1 Dimension 1.0±0.05 0.5±0.05 0.4 max 0.3±0.1 Mark
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DEA102500LT-6307A1
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s118 diode
Abstract: S118 1SS118 diode s118 band switching diode 1S118 Hitachi DSA0040
Text: 1SS118 Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-297 Z Rev. 0 Features • High average forward current. (I O = 200mA) • High reliability with glass seal. Ordering Information Type No. Cathode band Mark Package Code 1SS118 Black S118
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1SS118
ADE-208-297
200mA)
DO-35
s118 diode
S118
1SS118
diode s118
band switching diode
1S118
Hitachi DSA0040
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S11MS3
Abstract: E64380 S21MS3 S21MS4
Text: S11MS3/S21MS3/S21MS4 S11MS3/ S21MS3/S21MS4 High Density Surface Mount Type Mini-flat Package Phototriac Coupler • Features ■ Outline Dimensions 1.27± 0.25 6 5 4 S Anode mark S11MS3 S21MS3 Input Output 0.5+- 0.4 0.2 5 No external connection 6 Anode/ cathode
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S11MS3/S21MS3/S21MS4
S11MS3/
S21MS3/S21MS4
S21MS4
S11MS3
S11MS3
E64380
S21MS3
S21MS4
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S11MS7
Abstract: E64380
Text: S11MS7 S11MS7 High Speed/ High Noiseresistance Type Phototriac Coupler • Features ■ Outline Dimensions S11MS 7 1 3 0.4± 0.1 Anode mark 1. For triggering medium/high power triac 6 5 4 4.4± 0.2 6 5 4 ■ Applications Internal connection diagram 0.6MAX.
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S11MS7
S11MS
E64380
S11MS7
E64380
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S11MS7
Abstract: E64380
Text: S11MS7 S11MS7 High Speed/ High Noiseresistance Type Phototriac Coupler • Features ■ Outline Dimensions S11MS 7 1 3 0.4± 0.1 Anode mark 1. For triggering medium/high power triac 6 5 4 4.4± 0.2 6 5 4 ■ Applications Internal connection diagram 0.6MAX.
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S11MS7
S11MS
E64380
S11MS7
E64380
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S11MS3
Abstract: No abstract text available
Text: S11MS3/S21MS3/S21MS4 S11MS3/ S21MS3/S21MS4 High Density Surface Mount Type Mini-flat Package Phototriac Coupler • Features ■ Outline Dimensions 1.27± 0.25 6 5 4 S Anode mark S11MS3 S21MS3 Input Output 0.5+- 0.4 0.2 5 No external connection 6 Anode/ cathode
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S11MS3/S21MS3/S21MS4
S11MS3/
S21MS3/S21MS4
S21MS4
S11MS3
S11MS3
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ltcc antenna
Abstract: ltcc antenna 2.4 GHz ltcc WPSM WPSML LTCC X band
Text: WPSMLANT002B LTCC Antenna PRELIMINARY SPECIFICATION Explanation of Part Number WPSMLANT 1 002 (2) B (3) Soldering terminal Identification mark (1) Product Series WPSMLANT – LTCC Antenna (2) Product Identifier 5.2 x 2.0mm Multilayer Ceramic Antenna (3)
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WPSMLANT002B
ltcc antenna
ltcc antenna 2.4 GHz
ltcc
WPSM
WPSML
LTCC X band
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diode gp 434
Abstract: RD07MVS2 diode zener 7.2v RD07MVS1 T112 318 MARKING DIODE
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD07MVS2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION OUTLINE DRAWING 0.22 2.0+/-0.05 1.0+/-0.05 2 3.5+/-0.05 1 3 (0.25) INDEX MARK (Gate)
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RD07MVS2
175MHz
520MHz
520MHz
175MHz)
520MHz)
diode gp 434
RD07MVS2
diode zener 7.2v
RD07MVS1
T112
318 MARKING DIODE
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transistor rf m 1104
Abstract: No abstract text available
Text: < Silicon RF Power MOS FET Discrete > RD02MUS1 RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W DRAWING DESCRIPTION 0.2+/-0.05 specifically designed for VHF/UHF RF power 1 1.0+/-0.05 4.9+/-0.15 amplifiers applications. FEATURES 2 INDEX MARK
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RD02MUS1
175MHz
520MHz
RD02MUS1
175MHz,
520MHz
175MHz)
520MHz)
Oct2011
transistor rf m 1104
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Untitled
Abstract: No abstract text available
Text: < Silicon RF Power MOS FET Discrete > RD05MMP1 RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W (a) OUTLINE DRAWING (b) (b) 7.0+/-0.2 0.2+/-0.05 RD05MMP1 is a MOS FET type transistor 0.65+/-0.2 DESCRIPTION 8.0+/-0.2 FEATURES (4.5) INDEX MARK
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RD05MMP1
941MHz,
RD05MMP1
941MHz
941MHz)
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WPSM
Abstract: WPSML
Text: Multilayer Ceramic Band Pass Filter Bluetooth & WLAN IEEE 802.11b/g 2.45GHz ISM Band 2520 Construction Explanation of Part Number WPSMLBPF (1) (1) (2) (3) (4) 002 (2) H (3) WPSMLBPF002H Identification mark (4) Ground Product Series WPSMLBPF: Band Pass Filter
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11b/g
45GHz
WPSMLBPF002H
WPSM
WPSML
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MGF0914A
Abstract: fet 4901 0648
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0914A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION OUTLINE DRAWING Unit:mm The MGF0914A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. Gate Mark Round corner FEATURES
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MGF0914A
MGF0914A
26dBm
800mA
50ohm
fet 4901
0648
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s118 diode
Abstract: s118 jedec do 35 1SS118 Hitachi DSA001653
Text: 1SS118 Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-297 Z Rev. 0 Dec. 1994 Features • High average forward current. (IO = 200mA) • High reliability with glass seal. Ordering Information Type No. Cathode band Mark Package Code 1SS118
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1SS118
ADE-208-297
200mA)
DO-35
SC-48
s118 diode
s118
jedec do 35
1SS118
Hitachi DSA001653
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MARK "326" FET
Abstract: transistor 3669
Text: < Silicon RF Power MOS FET Discrete > RD05MMP1 RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W (a) OUTLINE DRAWING 7.0+/-0.2 0.2+/-0.05 RD05MMP1 is a MOS FET type transistor (b) (b) 0.65+/-0.2 DESCRIPTION 8.0+/-0.2 FEATURES (4.5) INDEX MARK
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RD05MMP1
941MHz,
RD05MMP1
941MHz
941MHz)
05Electric
Oct2011
MARK "326" FET
transistor 3669
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wpi terminal
Abstract: WPSMLANT015A WPSM WPSML LTCC GHz
Text: Multilayer Ceramic Antenna 900MHz ISM Band Working Frequency Explanation of Part Number WPSMLANT 1 (1) (2) (3) (4) 015 (2) A (3) WPSMLANT015A Construction Soldering terminal (4) Identification mark Product Series WPSMLANT: Multilayer Ceramic Antenna Product No. Indentifier 015
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900MHz
WPSMLANT015A
wpi terminal
WPSMLANT015A
WPSM
WPSML
LTCC GHz
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2SK2975
Abstract: MITSUBISHI RF POWER MOS FET GR40-310 139706 t12max GR40-10 0927 TRANSISTOR 40799 17053
Text: MITSUBISHI RF POWER MOS FET 2SK2975 DESCRIPTION 2SK2975 is a MOS FET type transistor specifically designed for VHF/UHF power amplifiers applications. OUTLINE DRAWING INDEX MARK Dimensions in mm TOP (BOTTOM) FEATURES • High power gain:Gpe≥8.4dB @VDD=9.6V,f=450MHz,Pin=30dBm
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2SK2975
2SK2975
450MHz
30dBm
MITSUBISHI RF POWER MOS FET
GR40-310
139706
t12max
GR40-10
0927 TRANSISTOR
40799
17053
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diode gp 434
Abstract: RD07MVS1 RD07MVS2 T112 07MVS1 PO520 zener gp 434
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MVS2 RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 2.0+/-0.05 2 INDEX MARK Gate For output stage of high power amplifiers In VHF/UHF band mobile radio sets.
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RD07MVS2
175MHz
520MHz
RD07MVS2-101
diode gp 434
RD07MVS1
RD07MVS2
T112
07MVS1
PO520
zener gp 434
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2SK2974
Abstract: 093.216 transistor 2sk2974 GR400 093.941 9357 MITSUBISHI RF POWER MOS FET 015789 FET MARKING CR10-510
Text: MITSUBISHI RF POWER MOS FET 2SK2974 DESCRIPTION 2SK2974 is a MOS FET type transistor specifically designed for VHF/UHF power amplifiers applications. OUTLINE DRAWING INDEX MARK Dimensions in mm TOP (BOTTOM) FEATURES • High power gain:Gpe≥8.4dB @VDD=7.2V,f=450MHz,Pin=30dBm
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2SK2974
2SK2974
450MHz
30dBm
t8135
093.216
transistor 2sk2974
GR400
093.941
9357
MITSUBISHI RF POWER MOS FET
015789
FET MARKING
CR10-510
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WPSM
Abstract: WPSML LTCC GHz
Text: Miniature Band Pass Filter 2520 Bluetooth & WLAN IEEE 802.11b 2.45GHz ISM Band Working Frequency Explanation of Part Number WPSMLBPF (1) (1) (2) (3) (4) 002 (2) G (3) WPSMLBPF002G Construction Identification mark (4) Input/ Output Ground Product Series WPSMLBPF: Miniature Band Pass Filter
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45GHz
WPSMLBPF002G
WPSM
WPSML
LTCC GHz
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TRANSISTOR D 1765
Abstract: transistor mosfet 4425 1776 48T08 TRANSISTOR D 1765 720 T72 MARKING 1788
Text: < Silicon RF Power MOS FET Discrete > RD09MUP2 RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W DESCRIPTION (a) (b) 7.0+/-0.2 0.2+/-0.05 FEATURES (4.5) INDEX MARK [Gate] 2.6+/-0.2 0.95+/-0.2 •High power gain: Pout>8W, Gp>10dB@Vdd=7.2V,f=520MHz
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RD09MUP2
520MHz,
RD09MUP2
520MHz
520MHz)
Oct2011
TRANSISTOR D 1765
transistor mosfet 4425
1776
48T08
TRANSISTOR D 1765 720
T72 MARKING
1788
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Untitled
Abstract: No abstract text available
Text: RMO3E-3 A Highly Integrated Dual-band SiGe Power Amplifier that Enables 256 QAM 802.11ac WLAN Radio Front-End Designs Chun-Wen Paul Huang, Philip Antognetti, Lui Lam, Tony Quaglietta, Mark Doherty, and William Vaillancourt Skyworks Solutions, Inc., Andover, MA 01810, USA
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s118 diode
Abstract: diode s118
Text: 1SS118 Silicon Epitaxial Planar Diode for High Speed Switching HITACHI ADE-208-297 Z Rev. 0 Dec. 1994 Features • High average forward current. (I0 = 200mA) • High reliability with glass seal. Ordering Information Type No. Cathode band Mark Package Code
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1SS118
200mA)
ADE-208-297
DO-35
DO-35
s118 diode
diode s118
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MGF0913A
Abstract: 1709-1
Text: MITSUBISHI SEM ICON DUCTOR<GaAs FET> Preliminary MGF0913A L & S BAND GaAs FET [ SMD OUTLINE DRAWING DESCRIPTION non - matched ] urnt: Gate Mark Round corner The MGF0913A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. FEATURES
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OCR Scan
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MGF0913A
MGF0913A
31dBm
18dBm
200mA
1709-1
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