AMD Athlon 64 X2 5000
Abstract: AMD Athlon 64 X2 amd athlon 64 MOTHERBOARD SERVICE MANUAL AMD Athlon 64 X2 4800 amd athlon II x2 sil3531 Asus MOTHERBOARD SERVICE MANUAL VT6308 connection diagram AMD Athlon 64 X2 30579
Text: AMD Processor Performance Evaluation Guide Mark W. Welker Johann Pais Advanced Micro Devices, Inc. One AMD Place Sunnyvale, CA 94088 Publication #: 30579 Issue Date: March 2007 Revision: 3.74 2003 - 2007 Advanced Micro Devices, Inc. All rights reserved.
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LM309K
Abstract: nsc marking QML MARKING DETAILS 40 lead ceramic flatpack ALPHA YEAR DATE CODE 5962-9553601QPA LM7171AMJ-QML top marking codes CERAMIC FLATPACK ALPHA YEAR CODE
Text: N Top Marking Information for Mil/Aero Products TOP MARK INFORMATION Not all marks shown may appear on parts 883 883&&38510 38510Date DateCode Code 2nd Last 2nddigit: digit: Lastdigit digitof ofthe theyear yearwafer wafersort sortwas wasperformed. performed.
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MIL-STD-883
MIL-STD-883*
MIL-STD-883.
LM309K
nsc marking
QML MARKING DETAILS
40 lead ceramic flatpack
ALPHA YEAR DATE CODE
5962-9553601QPA
LM7171AMJ-QML
top marking codes
CERAMIC FLATPACK
ALPHA YEAR CODE
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GP145
Abstract: MGF0915A PO36 MGF0915 fet GP145
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0915A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION OUTLINE DRAWING Unit:mm The MGF0915A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. Gate Mark Round corner FEATURES
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MGF0915A
MGF0915A
26dBm
800mA
GP145
PO36
MGF0915
fet GP145
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MGF0914A
Abstract: fet 4901 0648
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0914A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION OUTLINE DRAWING Unit:mm The MGF0914A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. Gate Mark Round corner FEATURES
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MGF0914A
MGF0914A
26dBm
800mA
50ohm
fet 4901
0648
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uhf 1kw amplifier
Abstract: MGF0916A
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0916A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION OUTLINE DRAWING Unit:mm The MGF0916A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. Gate Mark Round corner FEATURES
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MGF0916A
MGF0916A
23dBm
100mA
uhf 1kw amplifier
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MGF0913A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0913A L & S BAND GaAs FET [ SMD non - matched ] OUTLINE DRAWING DESCRIPTION Unit:mm Gate Mark Round corner The MGF0913A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. FEATURES
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MGF0913A
MGF0913A
31dBm
18dBm
200mA
Unit39
50ohm
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EM16SG
Abstract: No abstract text available
Text: Surface Mount LED 1,6x0,8 mm EMIG-SERIES 7197 Notes: 1. All dimensions are in millimeters inches . 2. Tolerance is +0.25 (0.01) unless otherwise noted. 3 Specifications are subjected to change without notice SG t SR Orientation Mark 08(031) 1.6 (.063) w 4
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250mm.
ELI05
EM16SG
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D4D-1187N omron
Abstract: D4D-2132 5522n 5532N D4D-1A22N D4D-5532N D4D-5522N D4D-2A22N D4D-3180N D4D-6A32N
Text: D4D-jN Limit Switch Small, Economical Switch Featuring a Positive Opening Mechanism and Conforming to the CE Mark Features positive opening mechanism NC contacts only that opens contacts, thus preventing faulty operation due to factors such as metal deposition. (Slow-action type has received positive
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EN50Chuo-ku,
NL-2132
2356-81-300/Fax:
847-843-7900/Fax:
835-3011/Fax:
C101-E1-3
D4D-1187N omron
D4D-2132
5522n
5532N
D4D-1A22N
D4D-5532N
D4D-5522N
D4D-2A22N
D4D-3180N
D4D-6A32N
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5532N
Abstract: D4D-5562N D4D-1520N D4D-2120N 6132N D4D-1A22N ul listed conduit D4D-6A20N D4D-5532N D4D-1A87N
Text: D4D-jN Limit Switch Small, Economical Switch Featuring a Positive Opening Mechanism and Conforming to the CE Mark Features positive opening mechanism NC contacts only that opens contacts, thus preventing faulty operation due to factors such as metal deposition. (Slow-action type has received positive
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EN50ssories.
OA-W1609
1/2-14NPT
C101-E1-3
5532N
D4D-5562N
D4D-1520N
D4D-2120N
6132N
D4D-1A22N
ul listed conduit
D4D-6A20N
D4D-5532N
D4D-1A87N
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cmos Quartz 32768hz
Abstract: UM3217 PIEZO BUZZER DRIVER STOPWATCH 8 DIGIT 7 segment display p 521 ic 4 digit lcd display for watch Unicorn Microelectronics lcd UM3161 piezoelectric buzzer 12V digit watch ic
Text: UNICORN M I CR OE LECT RO NICS TSTÛTaa GQOlbBQ M I EME D 5 i U 1 = % / = ? 3 » ^3 5 = 5 i Y S I ^ UM3217 6-Digit Multifunction Watch P R E L IM IN A R Y Features • Single 1.5 volt battery operation ■ 32768Hz quartz crystal time base * 6-digit LC D with 7-day mark, AM/PM mark, date mark,
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32768Hz
UM3161
UM3217
UM3217
UM3161
cmos Quartz 32768hz
PIEZO BUZZER DRIVER
STOPWATCH 8 DIGIT
7 segment display p 521 ic
4 digit lcd display for watch
Unicorn Microelectronics lcd
piezoelectric buzzer 12V
digit watch ic
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NEh jJ8
Abstract: k30270 LB 11911 095275-VK20BA ue09 KM 7-C 1 UF -20 100V 74S83 S0807 74LS32N z3ans
Text: R E V IS IO N S DESCRIPT'ON » * * LTR MARK AM*« P iK PXÛC1S1 Z v cmpcz procgsz z. 2 PL J L MARK PEU PE0C£5S J p 6 H A A # i WAS 9?Z7£9-toZW E 6 m * T £ D * £ / i £ r £ t d i0 £ # i/ tty * * ¡è k w - ¿ A J 4 0 1 6 9 / & J / O / i. — to * D D £ D
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57-flrUS
t4133)
944i3i-qq5l1
f94C93/-i-Cd)
2N2222
470PF
NEh jJ8
k30270
LB 11911
095275-VK20BA
ue09
KM 7-C 1 UF -20 100V
74S83
S0807
74LS32N
z3ans
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H1F mark
Abstract: No abstract text available
Text: Header Straight Type / - Clearance Hole for cleaning • Without Clearance Hole: No Board Cleaning Type • With Clearance Hole: Board Cleaning Type Polarization Mark \ fin 50 <= I '. CL 670-1201-8 H IF 7C-40PA-1.27DSA
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250VDC
44T3537
GG03n3
44T3237
DG03nb
H1F mark
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diode BA170
Abstract: BA170 BA170 diode ITT diode lsi BA170
Text: ITT SEMICOND/ INTERNETALL SÜE ]> • MbflS?!! GGOBTM? L3b M I S I BA170 'T-Ol-0‘1 Silicon Epitaxial Planar Diode for universal use in consumer electronic and for switching applications max. 1.9 0 T \ Cathode Mark m a x . 0 .5 2 <3 This diode is delivered taped.
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BA170
DO-35
000274ft
diode BA170
BA170
BA170 diode
ITT diode
lsi BA170
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MTD6180
Abstract: MTE1070A
Text: I flE D 5 7 ^ 5 5 GGD04Q4 4 PHOTO TRANSISTOR MARK TECH INTERNATIONAL MTD6180 SILICON NPN EPITAXIAL PLANAR - I— t 1 I SILICON PHOTO TRANSISTOR FOR PHOTO SENSOR u S fc d J K' L M APPLICATIONS • OPTICAL SWITCH F —H • INTER R U PTER 1. EMITTER 2. COLLECTOR
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MTD6180
MTE1070A.
MTD6180
MTE1070A
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D043
Abstract: SML-LX1206UPGC-TR
Text: UNCONTROLLED DOCUMENT -—I - 2.00 [0 .0 7 9 ] REV. A CATHODE MARK 1,60 [0,063] SML-LX1206UPGC-TR A E.C.N. NUMBER AND REVISION COMMENTS DATE E.C.N. #10814. 12.3.01 1El R0.40 [R0.016] 2 P L S J ELECTRO-OPTICAL CHARACTERISTICS Ta =25X CATHODE
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SML-LX1206UPGC-TR
D043
SML-LX1206UPGC-TR
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Untitled
Abstract: No abstract text available
Text: GaAs IC SPST Switch With Integral Driver Non-Reflective DC-4 GHz ESAlpha AK004M1-11 -11 Features • Integral Driver ±5 V Supply Voltages ■ High Isolation, Non-Reflective ORIENTATION MARK 0.180 4.57 mm SQ. MAX. ■ 8 Lead Hermetic Surface Mount Package
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AK004M1-11
AK004M
3/99A
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Untitled
Abstract: No abstract text available
Text: UNCONTROLLED DOCUMENT PART NUMBER REV. SML-LXFT0805SPGC-TR CATHDDE MARK TOP VIEW POLARITY 1,25 [0,049] ANODE CATHODE 0.13 [0.005: ELECTRO-OPTICAL CHARACTERISTICS Ta = 2 5 X 1.E0 E0.047] — I L.30 [0.051] - PARAMETER MIN TYP PEAK WAVELENGTH 0.25 [0.010] REFLOW PROFILE
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SML-LXFT0805SPGC-TR
DI35EM
SML--LXFT0805SPGC--TR
562nm
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Untitled
Abstract: No abstract text available
Text: IL 5-ñ B J& & REV. EZi6£ors 3t' M . F*3 & DESCRIPTION DON NO. DATE à m il ÜÉ CHK. $1 H DR. APPD. gg APPD. ‘ON Q N I M V Ü Q # # M ü CONTACTS No. :30, 50, 70 CONTACTS No. :40, 60, 80, 100, 120 CAVITY MARK n COMPANY LOGO it# POLARIZING KEY ±0-
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TX14T
4TX14T
SJ039123
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MGF0913A
Abstract: 1709-1
Text: MITSUBISHI SEM ICON DUCTOR<GaAs FET> Preliminary MGF0913A L & S BAND GaAs FET [ SMD OUTLINE DRAWING DESCRIPTION non - matched ] urnt: Gate Mark Round corner The MGF0913A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. FEATURES
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MGF0913A
MGF0913A
31dBm
18dBm
200mA
1709-1
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MAAM23000A1
Abstract: MMIC hk MAAM23000-A1
Text: Afa Advanced Information Low Noise GaAs MMIC Amplifier 2 -3 GHz Features CR-3 • 1.3 dB Typical Noise Figure • 26 dB Typical Gain • DC Decoupled RF Input and Output • No External Components Required • Small, 8 Lead Ceramic Package1 ORIENTATION MARK
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MAAM23000-A1
MAAM23000A1
MMIC hk
MAAM23000-A1
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Untitled
Abstract: No abstract text available
Text: GaAs 1C SPST Switch With Integral Driver Reflective DC-4 GHz ESAlpha AK004R1-11 Features • Integral Driver ±5 V Supply Voltages -11 ORIENTATION MARK 0.180 4.57 mm SQ . MAX. ■ Reflective ■ 8 Lead Hermetic Surface Mount Package ■ Capable of Meeting MIL-STD
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AK004R1-11
AK004R1-11
3/99A
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marking 82T
Abstract: ifw 04 Collmer Semiconductor marking code 214 Seaf ERA84-009 Diode era84 era-84
Text: ERA84-009 1A • Outline Drawing SCHOTTKY BARRIER DIODE ■ Marking ■ Features • Lo w V f Color code : Blue • Super high speed switching • High reliability by planer design , Voltage class ■ Applications -8 8 ro * 8 * * if Cathode mark Lot No.
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ERA84-009
500ns,
3ci01
marking 82T
ifw 04
Collmer Semiconductor
marking code 214
Seaf
ERA84-009
Diode era84
era-84
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D043
Abstract: SML-LX1206USBC-TR
Text: PART NUMBER REV. SM L-LX1206USBC-TR A UNCONTROLLED DOCUMENT -—I- 2.00 [0.079] REV. A CATHODE MARK 1,60 [0,063] E.C.N. NUMBER AND REVISION COMMENTS E.C.N. #10814. DATE 12.3.01 + H 1El R0.40 [R0.016] 2 P L S J ANODE ELECTRO-OPTICAL CHARACTERISTICS Ta = 2 5 X
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SML-LX1206USBC-TR
D043
SML-LX1206USBC-TR
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Untitled
Abstract: No abstract text available
Text: GaAs 1C SPST FET Switch Low Loss With Integral Driver Reflective DC-4 GHz ESAlpha AK004L1-11 -11 Features • Integral Driver ±5 V Supply Voltages ■ Low Loss, Reflective ORIENTATION MARK 0.180 4.57 mm SQ. MAX. ■ 8 Lead Hermetic Surface Mount Package
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AK004L1-11
AK004L1
3/99A
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