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    LZE18100R Search Results

    LZE18100R Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    LZE18100R Philips Semiconductors NPN Silicon Microwave Power Transistor Scan PDF

    LZE18100R Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: ^ 3 3 -0 5 Philips Components Data sheet status Preliminary specification date of Issue June 1992 LZE18100R NPN silicon microwave power transistor MAINTENANCE TYPE PHILIPS INTERNATIONAL 711ÜÖEb OÜ4b322 27T « P H I N St.E D FEATU RES DESCRIPTION • Interdigitated structure giving a


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    PDF LZE18100R FO-57C 711DflEb DD4b323 FO-57C.

    187 transistor npn

    Abstract: TRANSISTOR 187 LZE18100R
    Text: -T-3-3-OS Philips Components Data sheet status Preliminary specification date of Issue June 1992 MAINTENANCE TYPE LZE18100R NPN silicon microwave power transistor SbE D PHILIPS i n t e r n a t i o n a l • FEATURES D E S C R IP T IO N • In te rd ig ita te d s tru c tu re g iving a


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    PDF LZE18100R 711002b FO-57C T-33-05 711DflEb 0D4b323 FO-57C. 187 transistor npn TRANSISTOR 187 LZE18100R

    transistor f6 13003

    Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
    Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.


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    PDF SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350

    LTE-3201

    Abstract: FO-163 lte4002s LBE2003S LBE2009S LCE2003S LCE2009S LTE21009R LUE2009S
    Text: N AMER P HILIPS/DISCRETE SSE D • t.bS3T31 D01fc,E32 S ■ T - 5 3-0/ 54 Power Devices MICROWAVE TRANSISTORS LINEAR POWER TRANSISTORS TYPE NO. f PACKAGE OUTLINE GHzv Vce m : ic (mAX - Gpo - ' ' P L l'” . (W (dB) CLASS A, MEDIUM POWER LAË6000Q LBE2003S


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    PDF bS3T31 D01fc 6000Q OT-100 LBE2003S FO-45 LCE2003S FO-46 LBE2009S LTE-3201 FO-163 lte4002s LCE2009S LTE21009R LUE2009S

    BGY41

    Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
    Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.


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    PDF LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE E5E D btiS3131 DOltEBS S • T -Z S-O l Power Devices MICROWAVE TRANSISTORS LINEAR POWER TRANSISTORS TYPE NO. PACKAGE OUTLINE f Vce GHZ y f” Tc ' (mAX ' - - PL1<i. (W Gpo* (dB) CLASS A, MEDIUM POWER LAE6000Q LBE2003S LCE2003S


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    PDF btiS3131 LAE6000Q LBE2003S LCE2003S LBE2009S LCE2009S LUE2003S LUE2009S OT-100 FO-45