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    3N166 Price and Stock

    SiTime Corporation SIT9365AI-2E2-33N166.666666

    MEMS OSC XO 166.666666MHZ LVDS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIT9365AI-2E2-33N166.666666 1
    • 1 $13.29
    • 10 $12.436
    • 100 $11.5779
    • 1000 $11.40642
    • 10000 $11.40642
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    SiTime Corporation SIT9365AC-4B1-33N166.666666

    MEMS OSC XO 166.666666MHZ HCSL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIT9365AC-4B1-33N166.666666 1
    • 1 $13.71
    • 10 $12.826
    • 100 $11.9418
    • 1000 $11.76486
    • 10000 $11.76486
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    SiTime Corporation SIT9365AC-1B2-33N166.666666

    MEMS OSC XO 166.666666MHZ LVPECL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIT9365AC-1B2-33N166.666666 1
    • 1 $13
    • 10 $12.165
    • 100 $11.3256
    • 1000 $11.15786
    • 10000 $11.15786
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    SiTime Corporation SIT9365AI-4E2-33N166.666666

    MEMS OSC XO 166.666666MHZ HCSL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIT9365AI-4E2-33N166.666666 1
    • 1 $13.29
    • 10 $12.436
    • 100 $11.5779
    • 1000 $11.40642
    • 10000 $11.40642
    		Buy Now

    SiTime Corporation SIT9365AI-1B3-33N166.666666

    MEMS OSC XO 166.666666MHZ LVPECL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIT9365AI-1B3-33N166.666666 1
    • 1 $12.21
    • 10 $10.543
    • 100 $9.1161
    • 1000 $7.89277
    • 10000 $7.89277
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    Find more 3N166 price and stock on Findchips.com

    3N166 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    3N166 Calogic Monolithic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier Original PDF
    3N166 Linear Integrated Systems MONOLITHIC DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    3N166 Calogic Monolithic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier Scan PDF
    3N166 General Instrument Short Form Data 1976 Short Form PDF
    3N166 Intersil Shortform Data Book 1983/4 Short Form PDF
    3N166 Intersil Monolithic dual P-channel enchancement mode MOSFET general purpose amplifier. Scan PDF
    3N166 Intersil Data Book 1981 Scan PDF
    3N166 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    3N166 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    3N166 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    3N166 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    3N166 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    3N1664 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    3N166 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: LS/3N165, LS/3N166 MONOLITHIC DUAL P-CHANNEL ENHANCEMENT MODE MOSFET FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE LS3N165, 3N166 3N165, 3N166 LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 (TA=25°C unless otherwise noted)


    Original     		LS/3N165, LS/3N166 LS3N165, LS3N166 3N165, 3N166 3N165 25-year-old, 3N165 PDF

    P-Channel Depletion Mode FET

    Abstract: 2n3955 transistor spice TRANSISTOR 2n3955 J201 N-channel JFET to 90 dual P-Channel JFET jfet n channel ultra low noise low noise dual P-Channel JFET Ultra High Input Impedance N-Channel JFET Amplifier monolithic dual jfet transistor u402 transistor
    Text: 3N165, 3N166 MONOLITHIC DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Linear Integrated Systems FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 (TA= 25°C unless otherwise noted) Drain-Source or Drain-Gate Voltage (NOTE 2)


    Original     		3N165, 3N166 3N165 3N166 P-Channel Depletion Mode FET 2n3955 transistor spice TRANSISTOR 2n3955 J201 N-channel JFET to 90 dual P-Channel JFET jfet n channel ultra low noise low noise dual P-Channel JFET Ultra High Input Impedance N-Channel JFET Amplifier monolithic dual jfet transistor u402 transistor PDF

    3N165

    Abstract: 3N166
    Text: 3N165, 3N166 MONOLITHIC DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Linear Integrated Systems FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 (TA= 25°C unless otherwise noted) Drain-Source or Drain-Gate Voltage (NOTE 2)


    Original     		3N165, 3N166 3N165 300ms. 3N165 3N166 PDF

    intersil dual p-channel mosfet to-78

    Abstract: No abstract text available
    Text: 3N166 P-CHANNEL MOSFET The 3N166 is a monolithic dual enhancement mode P-Channel Mosfet FEATURES DIRECT REPLACEMENT FOR INTERSIL 3N166 ABSOLUTE MAXIMUM RATINGS1@ 25°C unless otherwise noted Maximum Temperatures The hermetically sealed TO-78 package is well suited


    Original     		3N166 3N166 300mW intersil dual p-channel mosfet to-78 PDF

    3N165

    Abstract: 3N166 3N170 X3N165-66
    Text: Monolithic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier LLC 3N165 / 3N166 FEATURES ABSOLUTE MAXIMUM RATINGS Note 1 (TA = 25oC unless otherwise specified) • Very High Impedance • High Gate Breakdown • Low Capacitance Drain-Source or Drain-Gate Voltage (Note 2)


    Original     		3N165 3N166 3N165. 3N166. 100MHz 3N165 -55oC 3N170 300ms. DS018 3N166 X3N165-66 PDF

    Untitled

    Abstract: No abstract text available
    Text: LS/3N165, LS/3N166 MONOLITHIC DUAL P-CHANNEL ENHANCEMENT MODE MOSFET FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE LS3N165, 3N166 3N165, 3N166 LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 (TA=25°C unless otherwise noted)


    Original     		LS/3N165, LS/3N166 LS3N165, LS3N166 3N165, 3N166 3N165 25-year-old, 3N165 PDF

    3N166

    Abstract: 3N165 3N170 73Package
    Text: Monolithic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier CORPORATION 3N165 / 3N166 FEATURES ABSOLUTE MAXIMUM RATINGS Note 1 (TA = 25oC unless otherwise specified) • Very High Impedance • High Gate Breakdown • Low Capacitance Drain-Source or Drain-Gate Voltage (Note 2)


    Original     		3N165 3N166 3N165. 3N166. -10mA, 100MHz 3N165 -55oC 3N170 3N166 73Package PDF

    J201 Replacement

    Abstract: 2N5019 "direct replacement"
    Text: IT124 SUPER-BETA MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES Direct Replacement for Intersil IT124 Pin for Pin Compatible C1 C2 E1 ABSOLUTE MAXIMUM RATINGS NOTE 1 TA= 25°C unless otherwise noted IC Collector-Current Maximum Power Dissipation


    Original     		IT124 IT124 250mW 500mW J201 Replacement 2N5019 "direct replacement" PDF

    J201 spice

    Abstract: dual P-Channel JFET sot23 2n4416 transistor spice LS3250A a7 surface mount diode J202 TRANSISTOR fet j310
    Text: LS3250 SERIES MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES 6 LEAD SOT-23 SURFACE MOUNT PACKAGE* TIGHT MATCHING1 EXCELLENT THERMAL TRACKING 2mV 1 SOT-23 TOP VIEW 3µV/°C ABSOLUTE MAXIMUM RATINGS2 B1 E2 B2 @ 25 °C unless otherwise stated


    Original     		LS3250 OT-23 J201 spice dual P-Channel JFET sot23 2n4416 transistor spice LS3250A a7 surface mount diode J202 TRANSISTOR fet j310 PDF

    Ultra High Input Impedance N-Channel JFET Amplifier

    Abstract: "DUAL N-Channel JFET" 2n3955 transistor spice TRANSISTOR a4 2n4416 transistor Vgs 40V mosfet dual Channel JFET sot23
    Text: LS421, LS422, LS423, LS424, LS425, LS426 LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES HIGH INPUT IMPEDANCE IG=0.25pA MAX HIGH GAIN gfs=120µmho MIN LOW POWER OPERATION VGS off =2V MAX ABSOLUTE MAXIMUM RATINGS NOTE 1


    Original     		LS421, LS422, LS423, LS424, LS425, LS426 400mW Ultra High Input Impedance N-Channel JFET Amplifier "DUAL N-Channel JFET" 2n3955 transistor spice TRANSISTOR a4 2n4416 transistor Vgs 40V mosfet dual Channel JFET sot23 PDF

    "DUAL N-Channel JFET"

    Abstract: Dual N-Channel JFET 2n4117a equivalent 2SK389 equivalent U405 JFET u404 spice LSK389B 2N4119A equivalent 3N165 equivalent LSK389A
    Text: LSK389 ULTRA LOW NOISE MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES ULTRA LOW NOISE TIGHT MATCHING HIGH BREAKDOWN VOLTAGE HIGH GAIN LOW CAPACITANCE en = 0.9nV/√Hz typ |VGS1-2| = 20mV max BVGSS = 40V max Yfs = 20mS (typ) 25pF typ TO-71


    Original     		LSK389 400mW 2SK389 "DUAL N-Channel JFET" Dual N-Channel JFET 2n4117a equivalent 2SK389 equivalent U405 JFET u404 spice LSK389B 2N4119A equivalent 3N165 equivalent LSK389A PDF

    "DUAL N-Channel JFET"

    Abstract: ultra low igss pA J176 equivalent
    Text: U/SST440,441 MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES Direct Replacement for SILICONIX U/SST440 & U/SST441 HIGH CMRR CMRR ≥ 85dB LOW GATE LEAKAGE IGSS ≤ 1pA 1 ABSOLUTE MAXIMUM RATINGS @ 25 °C unless otherwise stated Maximum Temperatures


    Original     		U/SST440 U/SST440 U/SST441 500mW "DUAL N-Channel JFET" ultra low igss pA J176 equivalent PDF

    FET U310

    Abstract: U310 fet mosfet 2n4351 low noise low frequency JFET j174 LS312 equivalent N-CHANNEL LOW NOISE AMPLIFIER j177 equivalent transistor 10mA JFET
    Text: U/J/SST308 SERIES SINGLE N-CHANNEL HIGH FREQUENCY JFET Linear Integrated Systems FEATURES Direct Replacement For SILICONIX U/J/SST308 SERIES OUTSTANDING HIGH FREQUENCY GAIN Gpg = 11.5dB LOW HIGH FREQUENCY NOISE J SERIES NF = 2.7dB TO-92 BOTTOM VIEW TO-18 BOTTOM VIEW


    Original     		U/J/SST308 350mW 500mW OT-23 FET U310 U310 fet mosfet 2n4351 low noise low frequency JFET j174 LS312 equivalent N-CHANNEL LOW NOISE AMPLIFIER j177 equivalent transistor 10mA JFET PDF

    jfet transistor 2n4391

    Abstract: ls n channel jfet J506 equivalent transistor j109 equivalent Siliconix "low noise jfet" A1 sot23 n-channel J201 N-channel JFET jfet to 92 depletion n-channel mosfet to-92 J201 Replacement
    Text: J/SST108 SERIES LOW NOISE SINGLE Linear Integrated Systems N-CHANNEL JFET SWITCH FEATURES Direct Replacement for Siliconix J/SST: 108, 109, 110, & 110A LOW ON RESISTANCE rDS on ≤ 8Ω FAST SWITCHING tON ≤ 4ns ABSOLUTE MAXIMUM RATINGS1 @ 25 °C (unless otherwise stated)


    Original     		J/SST108 350mW OT-23 jfet transistor 2n4391 ls n channel jfet J506 equivalent transistor j109 equivalent Siliconix "low noise jfet" A1 sot23 n-channel J201 N-channel JFET jfet to 92 depletion n-channel mosfet to-92 J201 Replacement PDF

    Untitled

    Abstract: No abstract text available
    Text: 3N165. 3N166 LINEAR SYSTEMS MONOLITHIC DUAL P-CHANNEL ENHANCEMENT MODE Linear integrated Systems MOSFET FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 (TA- 25°C unless otherwise noted)


    OCR Scan     		3N165 3N166 3N165. 3N166 300ms. PDF

    Untitled

    Abstract: No abstract text available
    Text: _| _ CQIOQIv Monolithic Dual P-Channel Enhancement Mode MOSFET M . General Purpose Amplifier ^ CORPORATION \ j 3N165/3N166 FEATURES A B S O L U T E M A X IM U M R A T IN G S Note 1 (Ta = 25°C unless otherwise specified) • V ery H igh Im pedan ce • H igh G ate B re ak d o w n


    OCR Scan     		3N165/3N166 3N165 3N166 -10mA, 100MHz -500fiA 3N170 300ms. PDF

    3N166

    Abstract: 3N165 3N170
    Text: 3N165, 3N166 Dual P-Channel Enhancem ent Mode _ MOS FET FEATURES • V ery High In put Impedance • High Gate Breakdown • Low Capacitance MAXIMUM RATINGS @ V gss Vqss (1 V qss V Gos Vqq Vq lD PD Tj T jtg Tl PIN CONFIGURATION 2 5 “C am bient unless noted)


    OCR Scan     		3N170 -10mA, 100MHz 3N165 -1500mA, -500/jA -500mA 3N166 3N165 PDF

    3N165

    Abstract: 3N166
    Text: G E SOLI» STATE □1 D E|3 fl7 S D fll T - GDI I d 17 3N165, 3N166 3N165, 3N166 Monolithic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier FEATURES ABSOLUTE MAXIMUM RATINGS • Very High Impedance • High Gate Breakdown Drain-Source or Drain-Gate Voltage Note 2


    OCR Scan     		3N165, 3N166 307SDÃ 3N165 -500HA 3N170 300ms. 3N165 3N166 PDF

    Untitled

    Abstract: No abstract text available
    Text: 3N165. 3N166. LINEAR SYSTEMS MONOLITHIC DUAL P-CHANNEL ENHANCEMENT MODE Linear Integrated Systems MOSFET FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 (Ta= 25°C unless otherwise noted)


    OCR Scan     		3N165 3N166 3N165. 3N166. 300ms. PDF

    3N165

    Abstract: 3N166 3N170
    Text: Monolithic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier caloric C O RPO RATIO N v 3N1B5/3N166 A B S O L U T E M A X IM U M R A T IN G S N o te 1 ( T a = 2 5 °C unless otherwise specified) FE A TU R E S • Very H igh Im pe d a n c e


    OCR Scan     		3N165/3N166 3N165 3N166 -10mA, 100MHz -500hA -500hA 3N170 300ms. 3N165 3N166 PDF

    Untitled

    Abstract: No abstract text available
    Text: 3N165. 3N166 LINEAR SYSTEMS MONOLITHIC DUAL P-CHANNEL ENHANCEMENT MODE Linear Integrated Systems MOSFET FEATURES VERY HIGH INPUT IM PEDANCE HIGH GATE BREAKDOW N ULTRA LOW LEAKAGE LOW CAPACITANCE ABSOLUTE MAXIMUM R ATING S NQTÇ 1 (Ta= 25°C unless otherwise noted)


    OCR Scan     		3N165 3N166 3N165. 3N166 300ms. PDF

    Untitled

    Abstract: No abstract text available
    Text: Monolithic Dual P-Channel Enhancement Mode MOSFET _ , _ _ . General Purpose Amplifier — C Q I O Q I C CORPORATION 3N165/3N166 A B S O L U T E M A X IM U M R A T IN G S N o t e l (T a = 2 5 °C unless otherwise specified) F E A TU R E S • V ery H ig h Im p e d a n c e


    OCR Scan     		3N165/3N166 -10mA, 100MHz 3N165 -500nA, 3N170 300ms. 0000T4G PDF

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    3N165

    Abstract: 3N166
    Text: ^Ælitron [F>ßä E m J T r ©MMMi P -C H A N N E L E N H A N C E M E N T DUAL M O S FET Devices. Inc. CHIP IMUMBER CONTACT METALLIZATION Top Contact: > 12,000 A Aluminum Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS .035" 0.889mm) It is advisable that:


    OCR Scan     		889mm) 0254mm) -10mA, --10V 10niA 3N165 3N166 PDF