Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    LH53B16R00 Search Results

    LH53B16R00 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    LH53B16R00 Sharp CMOS 16M (1M x 16-512K x 32) MROM Original PDF
    LH53B16R00N Sharp CMOS 16M(1M x 16/512K x 32) Mask-Programmable ROM Original PDF
    LH53B16R00N-12 Sharp EPROM Parallel Async Scan PDF

    LH53B16R00 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LH53B16R00

    Abstract: No abstract text available
    Text: LH53B16R00 CMOS 16M 1M x 16/512K × 32 MROM FEATURES PIN CONNECTIONS • 1,048,576 × 16 bit organization (Word mode: W = VIL) 524,288 × 32 bit organization (Double Word mode: W = VIH) • Access time: 120 ns (MAX.) Access time in page mode: 50 ns (MAX.)


    Original     		PDF LH53B16R00 16/512K 70-PIN D31/A-1 70SSOP 70-pin, 500-mil SSOP70-P-500) LH53B16R00N LH53B16R00

    MB834000

    Abstract: M5M23160 MB834100 MB838000 MB832000 SGS M27C256 I27C256 KM23C1010 M27C256 M27C256 intel
    Text: CROSS-REFERENCE GUIDE 1. EPROM CAPACITY CONFIGRUATION MACRONIX INTEL AMD N.S. S.G.S. 256K 32K x 8 MX27C256 i27C256 Am27C256 NM27C256 M27C256 512K 64K x 8 MX27C512 i27C512 Am27C512 NM27C512 M27C512 32K x 16 MX27C516 128K x 8 MX27C1000 i27C010 Am27C010 NM27C010


    Original     		PDF MX27C256 i27C256 Am27C256 NM27C256 M27C256 MX27C512 i27C512 Am27C512 NM27C512 M27C512 MB834000 M5M23160 MB834100 MB838000 MB832000 SGS M27C256 I27C256 KM23C1010 M27C256 M27C256 intel

    LH5B

    Abstract: 3B16 LH53B16R00N Z3D15 LH5S
    Text: SHARP SPEC No. E L 0 7 6 0 S 8 ISSUE: Nov. 10 1995 To ; S P E Product Type C 1 F 1 C A 1 6M bit L 5 H B T 1 O M A SK 7 R N S R O M X X f ilodel No. LH53B16R00N &This specifications contains 14 pages including the cover and appendix. If you have any objections, please contact us before issuing purchasing order.


    OCR Scan     		PDF EL0760S8 LH53B16R00N) SSOP70-P-500 AA1116 3B16R00N CV727 LH5B 3B16 LH53B16R00N Z3D15 LH5S

    536G

    Abstract: LH534600
    Text: MEMORIES • Mask ROMs Process Capacity * Configuration words X bits Pinout Access time Model No. (ns) MIN. Supply current (mA) MAX. Supply voltage (V) (ns) MAX. User's No. Cycle tima Package 256k 32k X 8 J LH53259D/N/T L H 5359X X 150 25 5 ± 10% 28DIP/28SOP/28TSOP(I)


    OCR Scan     		PDF LH53259D/N/T LH53517D/N/T/TR LH531VOOD/N/TAJ LH53V1ROON/T LH530800AD/AN/AU LHS30800AD/AN-Y LH531OOOBD/BN LH531000BN-S LH531024D/N/U LH532100BD 536G LH534600

    lh537

    Abstract: 42DIP lh533200 LH535g
    Text: MEMORIES • Mask ROMs Process CMOS ★ U n d e r development MEMORIES ★ Under developm ent Configuration Process Capacity (wortsxbits Access time (ns) MAX. Model No. Pinout LH-538VXX 100 100 5 ± 10% 32DIP/32SOP/32TSOPÎII) Normal 120 60 5 ± 10% L H 5 3 8 3 0 0 C D /C W C S Æ S H


    OCR Scan     		PDF LH-538VXX LH-5387XX LH-538NXX 32DIP/32SOP/32TSOP 32DIP/32SOP/ 32TSOP 42DIP/44SOP 48TSOP0) lh537 42DIP lh533200 LH535g

    flash 64m

    Abstract: No abstract text available
    Text: MEMORIES Mask ROMs C a p a c ity Access time C o nfig u ra tio n 120ns 100ns 80ns 150ns 256kj I 32k x 8 ] LH53259 12k I 64k x 8 LH53517 128k x 8 LH530800A LH531V00 1M LH531024 64k x 16 i LH532100B-1 256k x 8 ! LH532100B 2M JEDEC standard EPROM pinout 128k x 161


    OCR Scan     		PDF 100ns 120ns 150ns 256kj LH53259 LH53517 LH531V00 LH530800A LH531024 LH532048 flash 64m

    YL 69 moisture

    Abstract: YL 38 moisture A18 sot LH53B16R00N D16-D31-pin 70pin ssop LR7L
    Text: SHARP E L 0 7 6 0 3 8 Nov. 10 1995 SPEC No. ISSUE: S P Product Type E C I F 1 6M I C A T bit I O N S MASK ROM LH5B7RXX Model No. _ L H 5 9 B 1 6 R 0 Q N &This specifications contains 14 pages including the cover and appendix. If you have any objections, please contact us before issuing purchasing order.


    OCR Scan     		PDF EL076038 LH53B16R00N) AAI11S YL 69 moisture YL 38 moisture A18 sot LH53B16R00N D16-D31-pin 70pin ssop LR7L

    LQ070T5BG01

    Abstract: LM24P20 LM162KS1 BSCR86L00 IR2C07 LM5Q31 IR3Y29B BSCU86L60 lq6bw lq6bw506
    Text: INDEX 1 0 4 - 1 0 9 _ DC_ GL1PR112.69 GL3KG63. 66 GL5EG41.66 1 0 4 - n 0 5 O o c .113 DC1B1CP. 100 GL1PR135.69 GL3KG8. 66


    OCR Scan     		PDF 109-n GL1PR112. GL1PR135. GL1PR136. GL1PR211. GL1PR212. GL3KG63. GL3P201. GL3P202. GL3P305. LQ070T5BG01 LM24P20 LM162KS1 BSCR86L00 IR2C07 LM5Q31 IR3Y29B BSCU86L60 lq6bw lq6bw506

    Untitled

    Abstract: No abstract text available
    Text: MEMORIES ★ Capacity Configuration * 1 C om patible with 4 M -bit flash m em ories from A d vanced M icro D evices, Inc. * 2 C om patible with 4 M -bit flash m em ories from Intel Corp. A c c e s s tim e Under development MEMORIES ★ Under development Access time


    OCR Scan     		PDF 28kx8 128kx 256kx LH53H4000 LH532600 LH532000B-1 LH531000B LH532000B LH534600C LH534P00B

    IR3Y29B

    Abstract: ir3y26a1 IR4N IR3T24N IR3C08N ir2c53 ir2c05 li3301 IR3Y08 IR2E02
    Text: Index Model No. IR3T ARM710 ARM7DI ARM7DM ARM7TDMI ARM7TDMI-SPL ARM8 ARM810 CMOS CMOS CMOS CMOS F series G series J series K series ID22 series ID222XX ID223XX ID224XX ID226XX ID227XX ID229XX ID22DXX ID22FXX ID22HXX ID240 series ID240DXX ID240EXX ID240GXX


    OCR Scan     		PDF ARM710 ARM810 IR3T24 IR3T24N IR3Y05Y IR3Y08 IR3Y12B IR3Y18A IR3Y21 IR3Y26A IR3Y29B ir3y26a1 IR4N IR3T24N IR3C08N ir2c53 ir2c05 li3301 IR2E02

    sharp mask rom

    Abstract: mask rom compatible pinout
    Text: MEMORIES M ask ROMs ★ Mask ROM Specific Pinout • 3 V 3 .3 V operation Capacity Bit configuration A ccess time • 5 V operation Capacity Bit configuration Access time Under development MEMORES ★ Underdevelopment I Page Mode Specification (Mask ROM Specific Pinout)


    OCR Scan     		PDF LH53B8600 LH53B4P00 LH53B8P00B LH53B8V00 83C8800Á LH53C16HQ0A LH53B16P00B 16/x32 LH53B16R00 sharp mask rom mask rom compatible pinout

    sharp mask rom

    Abstract: No abstract text available
    Text: LH53C16600 16M Mask ROM Ref No.: NP 188C Issue Date: September 1997 High-Speed 16M-bit Mask-Programmable ROM with Page Mode Operation LH53C16600 • ■ Description The LH53C16600D/N User’s No. : LH-5C76XX is a CMOS 16M-bit mask-programmable ROM organized as 2 097 152 X 8


    OCR Scan     		PDF LH53C16600 LH53C16600D/N LH-5C76XX) 16M-bit 42-pin sharp mask rom

    IR2E27A

    Abstract: IR2C53 IR2E02 IR2E27 IR2E10 IR3N34 IR2E31A IR2E01 IR2C07 ir2e31
    Text: lndeX Model No. ARM7D CPU Core28,32,33 ARM7DM 28,33 CMOS CMOS CMOS CMOS 76 5A A F G 44 44 44 44 ID1 series ID2 series ID3 seríes ID21K064 ID21K128 ID21K256 ID21K512 ID21M010 ID21M015 ID21M020 ID21M040 ID22K256 ID22K512 ID22M010 ID22M020 ID22M040 ID22M080


    OCR Scan     		PDF Core28 IR2C24A/AN IR2C26 IR2C30/N IR2C32 IR2C33 IR2C34 IR2C36 IR2C38/N IR2C43 IR2E27A IR2C53 IR2E02 IR2E27 IR2E10 IR3N34 IR2E31A IR2E01 IR2C07 ir2e31

    nd3060

    Abstract: No abstract text available
    Text: CMOS 16M 1M x 16/512K x 32 MROM • Access time: 120 ns (MAX.) Access time in page mode: 50 ns (MAX.) • Supply current: -O p e ra tin g : 180 mA (MAX.) - Standby: 300 [iA (MAX.) 70-PIN SSOP TOP VIEW f N Aq IH 1 • 70 n N c A iC 2 69 n N c a2 68 n N c


    OCR Scan     		PDF 16/512K 70-PIN D31/A. 70-pin, 500-mil tLH53B16R00 SSOP70-P-500) LH53B16R00 nd3060

    LHMD09

    Abstract: No abstract text available
    Text: MEMORIES ★ U nderdevelopm ent • Page Mode Specification Mask ROM Specific Pinout • 3 .3 V operation B it C apacity configuration 8M 16M x 8/x 16 x 8/x 16 x 16/x 32 x 8/x 16 32M x 16/x 32 64M x 16/x 32 128M x 16/x 32 Model No. LH53BV8600D/N LH53BV8600T


    OCR Scan     		PDF LH-5D86XX LH-5D80XX LH-ME78XX LH-MD79XX LH-ME58XX LH-ME53XX LH-MD50XX LH-MD57XX LH-MD09XX LH-MD19XX LHMD09

    Untitled

    Abstract: No abstract text available
    Text: CMOS 16M 1M x 16/512K x 32 MROM FEATURES • 1,048,576 x 16 bit organization (Word mode: W = V|L) 524,288 x 32 bit organization (Double Word mode: W = Vm) • Access time: 120 ns (MAX.) Access time in page mode: 50 ns (MAX.) • Supply current: - Operating: 180 mA (MAX.)


    OCR Scan     		PDF 16/512K 70-pin, 500-mil 70-PIN LH53B16R00 SSOP70-P-500) LH53B16R00