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    Aplus Integrated Circuits Inc AIVR3K42-DIP8

    IC-3K42 VOICE 2.2V-3.6V 42sn DIP8 APLUS
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    New Advantage Corporation AIVR3K42-DIP8 1,455 1
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    42DIP Datasheets Context Search

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    J241

    Abstract: J239
    Text: M3T-42DIP-DMS Converter Board for Connecting 42P4B to 42P2R User's Manual Keep safety first in your circuit designs! • Renesas Technology Corporation and Renesas Solutions Corporation put the maximum effort into making semiconductor products better and more


    Original     		PDF M3T-42DIP-DMS 42P4B 42P2R J2-10 J2-11 J2-12 J2-13 J2-14 J2-15 J2-16 J241 J239

    all ic data

    Abstract: No abstract text available
    Text: M3T-42DIP-DMS Converter for Connecting 42-pin RSS Type Emulator MCU to M3T-DCT42B-450 or M3T-SSOP42B-450 Function This converter connects a 42-pin 1.778mm-pitch SDIP (42P4B or 42S1B-A) package to the connector provided at the top of the direct dummy IC (M3T-DCT42B-450 or M3T-SSOP42B-450).


    Original     		PDF M3T-42DIP-DMS 42-pin M3T-DCT42B-450 M3T-SSOP42B-450) 778mm-pitch 42P4B 42S1B-A) M3T-DCT42B-450 all ic data

    14Q7

    Abstract: No abstract text available
    Text: K3P4C1000D-D G C CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access time Random Access : 100ns(Max.) Page Access : 30ns(Max.) • 4 Words / 8 bytes page access


    Original     		PDF K3P4C1000D-D /512Kx16) 100ns K3P4C1000D-DC 42-DIP-600 K3P4C1000D-GC 44-SOP-600 K3P4C1000DD 14Q7

    MASK ROM 32M PROGRAM

    Abstract: K3N6C4000E-DC mask rom A2034
    Text: K3N6C4000E-DC CMOS MASK ROM 32M-Bit 2Mx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 2,097,152x16 bit organization • Fast access time 100ns(Max.) : CL=50pF 120ns(Max.) : CL=100pF • Supply voltage : single +5V • Current consumption Operating : 50mA(Max.)


    Original     		PDF K3N6C4000E-DC 32M-Bit 2Mx16) 152x16 100ns 120ns 100pF 42-DIP-600 K3N6C4000E-DC MASK ROM 32M PROGRAM mask rom A2034

    Untitled

    Abstract: No abstract text available
    Text: K3N5V U 1000E-D(G)C CMOS MASK ROM 16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16(word mode) • Fast access time 3.3V Operation : 100ns(Max.)@CL=50pF, 120ns(Max.)@CL=100pF


    Original     		PDF 1000E-D 16M-Bit /1Mx16) 100ns 120ns 100pF 1000E-DC 42-DIP-600

    A94-10

    Abstract: 4000E
    Text: K3N6V U 4000E-DC CMOS MASK ROM 32M-Bit (2Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 2,097,152x16 bit organization • Fast access time 3.3V Operation : 100ns(Max.)@CL=50pF, 120ns(Max.)@CL=100pF 3.0V Operation : 120ns(Max.)@CL=100pF • Supply voltage : single +3.0V/ single +3.3V


    Original     		PDF 4000E-DC 32M-Bit 2Mx16) 152x16 100ns 120ns 100pF A94-10 4000E

    Untitled

    Abstract: No abstract text available
    Text: K3P5C1000D-D G C CMOS MASK ROM 16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16(word mode) • Fast access time Random Access : 100ns(Max.) Page Access : 30ns(Max.) 8 Words / 16 Bytes page access


    Original     		PDF K3P5C1000D-D 16M-Bit /1Mx16) 100ns 150mA K3P5C1000D-DC 42-DIP-600 K3P5C1000D-GC 44-SOP-600

    lh28f320bjd

    Abstract: HI-LO SYSTEMS all11 LH28F320BJD-TTL LRS13A8 minato Model 1890A AF-9706 lh28f128bfht-pw LH28F128BFHED AF9706 AF9723
    Text: November/1/2003 Programmer Support for SHARP Flash Memory * As regards the detailed product information of programmer vendors, please inquire at each vendor. SHARP takes no responsibility for products, services and assurances by programmer vendors. Please take notice that some of discontinued product are still shown in this document.


    Original     		PDF November/1/2003 LH28F008BJ LH28F008BJT-TTLxx LH28F008BJT-BTLxx 40TSOP LHF00L02 LHF00L03 lh28f320bjd HI-LO SYSTEMS all11 LH28F320BJD-TTL LRS13A8 minato Model 1890A AF-9706 lh28f128bfht-pw LH28F128BFHED AF9706 AF9723

    16202

    Abstract: HY23V16202 HY23V16202D HY23V16202S HY23V16202T 48TSOP
    Text: 1MX16/2MX8 BIT CMOS MASK ROM HY23V16202 Description The HY23V16202 high performance read only memory is organized either as 2,097,152 x 8 bit byte mode or as 1,048,576 x 16 bit(word mode) followed by BHE mode select. The low power feature allows the battery


    Original     		PDF 1MX16/2MX8 HY23V16202 HY23V16202 42pin 100/120ns 44TSOP-II 16202 HY23V16202D HY23V16202S HY23V16202T 48TSOP

    Untitled

    Abstract: No abstract text available
    Text: KM23C16005D G CMOS MASK ROM 16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16(word mode) • Fast access time Random Access : 100ns(Max.) Page Access : 30ns(Max.) 8 Words / 16 Bytes page access


    Original     		PDF KM23C16005D 16M-Bit /1Mx16) 100ns 150mA KM23C16000D 42-DIP-600 KM23C16005DG 44-SOP-600

    MCHC705B16N

    Abstract: MC705P6ACPE MC705P6ACDWE XC705B32CFNE MC68HC705C8ACFNE MC68HC705B16NCFN MC68HC705SR3CP MC705P6ac MC705P6AMDWE MCHC705B16NVFNE
    Text: ç Prev Page Next Page è Microcontrollers – 8 and 16 Bit HC705 Family — 8-Bit Features: • 68HC705 CPU with the addition of EPROM memory • Fully static design allowing operation down to DC • 8- bit accumulator • 8-bit index register • 16-bit stack pointer • On-chip oscillator • 16-bit timer with built in prescaler, or 15-bit


    Original     		PDF HC705 68HC705 16-bit 15-bit 68-PLCC MC68HC11F1CFN2-ND MC68HC11F1CFN3TR-ND MCHC705B16N MC705P6ACPE MC705P6ACDWE XC705B32CFNE MC68HC705C8ACFNE MC68HC705B16NCFN MC68HC705SR3CP MC705P6ac MC705P6AMDWE MCHC705B16NVFNE

    Untitled

    Abstract: No abstract text available
    Text: K3N4V U 1000D-D(G)C CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access time : 3.3V operation : 100ns(Max.) 3.0V operation : 120ns(Max.)


    Original     		PDF 1000D-D /512Kx16) 100ns 120ns 1000D-DC 42-DIP-600 1000D-GC 44-SOP-600 42-DIP-600

    Untitled

    Abstract: No abstract text available
    Text: KM23V8105D G CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Random access time/Page Access Time 3.3V Operation : 100/30ns(Max.) 3.0V Operation : 120/40ns(Max.)


    Original     		PDF KM23V8105D /512Kx16) 100/30ns 120/40ns KM23V8105D 42-DIP-600 KM23V8105DG 44-SOP-600 42-DIP-600)

    Z04B

    Abstract: MR27V6441L MARK Z04D MR27V6441L-xxxMP Z04D 48TSOP2 ST03
    Text: OKI Semiconductor MR27V6441L PEDR27V6441L-02-03 Issue Date: April 4, 2005 Preliminary 64M x 1–Bit Serial Production Programmed ROM P2ROM GENERAL DESCRIPTION The MR27V6441L is a 64 Mbit Production Programmed Read-Only Memory, which is configured as 67,108,864 word × 1-bit. The MR27V6441L supports a simple read operation using a single 3.3V power supply


    Original     		PDF MR27V6441L PEDR27V6441L-02-03 MR27V6441L 33MHz 20MHz 42SOJ 48BGA 28SOP Z04B MARK Z04D MR27V6441L-xxxMP Z04D 48TSOP2 ST03

    U 324 SAMSUNG

    Abstract: KM23C8100BG 524288X16
    Text: SA MS UN G E L E C T R O N I C S INC b?E D • 7=11,4142 0G17DL.0 ÔT7 SM6K CMOS MASK ROM KM23C81 OOB G 8 M-BH ( 1M X 8 / 5 1 2 K X 16) C M O S M A S K R O M FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8 (byte mode) 524,288 x 16 (word mode)


    OCR Scan     		PDF KM23C81 0G17DL 8/512K 100ns 42-pin, 44-pin, KM23C8100B KM23C8100B) KM23C8100BG) U 324 SAMSUNG KM23C8100BG 524288X16

    LHMN5

    Abstract: 48TSOP LH5332600 LH5332600N LH5332600T LH5332C00D TSOP048-P-1218 LH5332500 2sj au LHMV
    Text: NBA/ INFORMATION LH5332600 • High-speed 32M-bit Mask-Programmable ROM Pin Connections Description The LH5332600N/T User's No. : LHMN56XX/LHMN5FXX is a CM OS 32M-bit mask-programmable ROM organized as 4 194 304X8 bits (Byte mode) or 2 097 152X 16 bits (Word


    OCR Scan     		PDF LH5332600 32M-bit LH5332600N/T LHMN56XX/LHMN5FXX) 32\l-bit 304X8 LH5332600N 44-pin OP044-P-0600) LH5332600T LHMN5 48TSOP LH5332600 LH5332C00D TSOP048-P-1218 LH5332500 2sj au LHMV

    Untitled

    Abstract: No abstract text available
    Text: KM23C32000A CMOS Ma sk ROM ELECTRONICS 32M-Bit 2M X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C32000A is a fully static mask programmable ROM organized 2,097,152x16bit.lt is fabricated using silicon-gate CMOS process technology.


    OCR Scan     		PDF KM23C32000A 32M-Bit KM23C32000A 152x16bit 42-DIP 16bit

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC fc.7E D • □ G17 1 1 b b?G KM23C32005 CMOS MASK ROM 32M-Bit 2 M x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 2,097,152 x 16 bit organization • Fast access time Random access: 150ns (max.) Page access: 70ns (max.) • Supply voltage: single +5V


    OCR Scan     		PDF KM23C32005 32M-Bit 150ns 100mA 42-pin, KM23C32005 A3-A20 KM23C32005)

    Untitled

    Abstract: No abstract text available
    Text: LH53V8000 FEATURES C M O S 8 M 1 M x 8 / 5 1 2 K x 16 3 V - D r iv e M a s k - P r o g r a m m a b le R O M PIN CONNECTIONS • 1,048,576 words x 8 bit organization (Byte mode) 42-PIN DIP TOP VIEW r A-ie C 1« Ai? C 2 524,288 words x 16 bit organization


    OCR Scan     		PDF LH53V8000 42-PIN 48TSOP 48-pin, 42-pin, 600-mil DIP042-P-0600) 44-pin,

    SO 42 P

    Abstract: 28SDIP SHARP 19
    Text: P ackage Outline Package Outline Unit : mm 9SIP (Heatsink) SHARP» 12 Package Outline •SHARP 13 Package Outline 22DIP 'SHARP 14 Package Outline DIP 24DIP 24SDIP 13.2±0 25 ® © ® ® 13.2±0 25 3 6 .0 *" 15.24TYP 4.25±OJ25 31.0“ -3 15.24TYP ®


    OCR Scan     		PDF 22DIP 24DIP 24SDIP 24TYP 54TYP 62TYP 778TYP 28DIP 28SDIP 24TYP SO 42 P 28SDIP SHARP 19

    42-DIP-6Q0

    Abstract: No abstract text available
    Text: KM23V8100D G CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CM O S M ASK ROM FEATURES GENERAL DESCRIPTION • Swltchable organization 1,048,576 x 8(byta mode) 524,288 x 16(word mode) • Fast access time : 3.3V operation: 1Q0ns(Max.) 3.0V operation: 120ns(Max.) • Supply voltage : single +3.0V/ single +3.3V


    OCR Scan     		PDF KM23V8100D /512Kx16) 120ns KM23V8100D 42-DIP-6Q0 KM23V8100DG 44-SOP-BOO KM23V81OODG D8-D15C2)

    M8512

    Abstract: samsung dram AM8512 TSOP 56 Package nand memory
    Text: FUNCTION GUIDE MEMORY ICs 4. ORDERING INFORMATION 4.1 DRAM KM 4 X X XXXXX X X X - XX DRAM SPEED •6 : •7 : •8 : • 10: ORGANIZATION • 1: X1 • 4: X4 • 8: X8 60ns 70ns 80ns 100ns PACKAGE • 9: X9 •1 6 : X16 •P : DIP • 18: X18 • 32: x32 PROCESS & POWER


    OCR Scan     		PDF 100ns 150ns 16Bit 18Bit M8512 samsung dram AM8512 TSOP 56 Package nand memory

    x-ray inverter

    Abstract: KA2130A KA2103L ka2107 10dip 14-DIP sawtooth generator KA2133 apc inverter circuit 10-SIPH
    Text: FUNCTION GUIDE LINEAR ICs 2. VIDEO APPLICATION 1.1 TV Application Applecation Type SIF System KA2101 Sound System Sound Muting Circuit Function Package 14DIP IF amp, IF limiter, IF detector KA2102A 14DIP H/S KA2101 +2.4W audio power amp KA2103L 9SIP Hori sync detector, Integrator, Comparater,


    OCR Scan     		PDF KA2912 KA2915 14DIP 28DIP KA2101 KA2102A KA2103L KA2101 x-ray inverter KA2130A ka2107 10dip 14-DIP sawtooth generator KA2133 apc inverter circuit 10-SIPH

    23c64000

    Abstract: 64M-BIT ROM 2710
    Text: CMOS MASK ROM KM23C64000 64M-Bit 4Mx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM 23C64000 is a fully static mask program m able ROM • • • • 4,194,304 x 16 bit organization Fast access tim e : 120ns(Max.) Supply voltage : single +5V


    OCR Scan     		PDF KM23C64000 64M-Bit 4Mx16) 120ns 23C64000 42-DIP-600 23C64000 42-DIP-600) 64M-BIT ROM 2710