LH5364000 Search Results

LH5364000 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Type	PDF
LH5364000N		Sharp	EPROM Parallel Async		Original	PDF

LH5364000 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
44-PIN Abstract: LH5364000N A6527 Text: CMOS 64M 8M x 8/4M × 16 Mask-Programmable ROM LH5364000 FEATURES • 8,388,608 words × 8 bit organization (Byte mode) 4,194,304 words × 16 bit organization (Word mode) • Access time: 150 ns (MAX.) • Power consumption: Operating: 385 mW (MAX.) Standby: 550 µW (MAX.)	Original	PDF	LH5364000 44-PIN 44-pin, 600-mil LH5364000 64M-bit 44SOP LH5364000N A6527
Untitled Abstract: No abstract text available Text: LH5364000 FEATURES • 8,388,608 words Byte mode 4,194,304 words (Word mode) CMOS 64M (8M x 8/4M x 16) Mask-Programmable ROM PIN CONNECTIONS x 8 bit organization 44-PIN SOP x 16 bit organization • Access time: 150 ns (MAX.) • Power consumption: Operating: 385 mW (MAX.)	OCR Scan	PDF	LH5364000 44-PIN 44-pin, 600-mil LH5364000 64M-bit
536G Abstract: LH534600 Text: MEMORIES • Mask ROMs Process Capacity * Configuration words X bits Pinout Access time Model No. (ns) MIN. Supply current (mA) MAX. Supply voltage (V) (ns) MAX. User's No. Cycle tima Package 256k 32k X 8 J LH53259D/N/T L H 5359X X 150 25 5 ± 10% 28DIP/28SOP/28TSOP(I)	OCR Scan	PDF	LH53259D/N/T LH53517D/N/T/TR LH531VOOD/N/TAJ LH53V1ROON/T LH530800AD/AN/AU LHS30800AD/AN-Y LH531OOOBD/BN LH531000BN-S LH531024D/N/U LH532100BD 536G LH534600
lh57257 Abstract: IR2E31 IR2E01 IR2C07 IR2E27 IR2E24 IR2E19 IR2E31A IR3n06 IR2E02 Text: Index Model No. ARM7D CPU Core Bi-CMOS 1 27 40,42 _ _ CMOS CMOS CMOS CMOS CMOS 4A 5A 8 A AH D ID1 Series ID2 Series 40,42 40.42 40,42 40,42 40 B ü.’1*"! 14,15 14 m IR2339 IR2403 IR2406 IR2406G IR2410 IR2411 IR2415 IR2419 IR2420 IR2422 IR2425 IR2429	OCR Scan	PDF	IR2E201 IR2E24 IR2E27/A IR2E28 IR2E29 IR2E30 IR2E31/A IR2E32N9 IR2E34 IR2E41 lh57257 IR2E31 IR2E01 IR2C07 IR2E27 IR2E19 IR2E31A IR3n06 IR2E02
LH231G Abstract: lh5348 LH538b LH2326 lh5s4 LHMN5 lh5359 lh5348xx lh537 LH235 Text: MEMORIES ★Under development • M ask ROMs SlpÉHRfi Bonflgmllan jvorai x d m i NMOS <"^g\|g\|ï\|ïi£- User1* No. sssysr Sllpjiijp 1 currant mA MAX. ■ Paefcagfe ft- • 64k 8k x 8 LH2389D LH2369XX 200 60 5 ± 10% 28DIP 128k 16k x 8 LH23128D LH2326XX 200	OCR Scan	PDF	28DIP 28DIP LH2389D LH23128D LH23286D LH236120 LH2310006D LH231G lh5348 LH538b LH2326 lh5s4 LHMN5 lh5359 lh5348xx lh537 LH235
lh537 Abstract: 42DIP lh533200 LH535g Text: MEMORIES • Mask ROMs Process CMOS ★ U n d e r development MEMORIES ★ Under developm ent Configuration Process Capacity (wortsxbits Access time (ns) MAX. Model No. Pinout LH-538VXX 100 100 5 ± 10% 32DIP/32SOP/32TSOPÎII) Normal 120 60 5 ± 10% L H 5 3 8 3 0 0 C D /C W C S Æ S H	OCR Scan	PDF	LH-538VXX LH-5387XX LH-538NXX 32DIP/32SOP/32TSOP 32DIP/32SOP/ 32TSOP 42DIP/44SOP 48TSOP0) lh537 42DIP lh533200 LH535g
flash 64m Abstract: No abstract text available Text: MEMORIES Mask ROMs C a p a c ity Access time C o nfig u ra tio n 120ns 100ns 80ns 150ns 256kj I 32k x 8 ] LH53259 12k I 64k x 8 LH53517 128k x 8 LH530800A LH531V00 1M LH531024 64k x 16 i LH532100B-1 256k x 8 ! LH532100B 2M JEDEC standard EPROM pinout 128k x 161	OCR Scan	PDF	100ns 120ns 150ns 256kj LH53259 LH53517 LH531V00 LH530800A LH531024 LH532048 flash 64m
Untitled Abstract: No abstract text available Text: MEMORIES ★ Capacity Configuration * 1 C om patible with 4 M -bit flash m em ories from A d vanced M icro D evices, Inc. * 2 C om patible with 4 M -bit flash m em ories from Intel Corp. A c c e s s tim e Under development MEMORIES ★ Under development Access time	OCR Scan	PDF	28kx8 128kx 256kx LH53H4000 LH532600 LH532000B-1 LH531000B LH532000B LH534600C LH534P00B
48 tsop flash pinout Abstract: LH23512 Text: MEMORIES Mask ROMs ^Under development Capacity Pinout Model No. Configuration Access time ns 55 1 64k !- 1 8k x 8 128k 16k x ! 256k 32k x 8 \|- -) [ 512k 64k x 8 b — I 80 100 120 150 200 Package 250 500 □ LH2369 28 LH23255 28 □ LH53259 28 28 38(1)	OCR Scan	PDF	LH2369 LH23126 LH23255 LH53259 LH23512 LH53517 LH53H0900 LH531VOO LH530800A LH530800A-Y 48 tsop flash pinout
IR2E27A Abstract: IR2C53 IR2E02 IR2E27 IR2E10 IR3N34 IR2E31A IR2E01 IR2C07 ir2e31 Text: lndeX Model No. ARM7D CPU Core28,32,33 ARM7DM 28,33 CMOS CMOS CMOS CMOS 76 5A A F G 44 44 44 44 ID1 series ID2 series ID3 seríes ID21K064 ID21K128 ID21K256 ID21K512 ID21M010 ID21M015 ID21M020 ID21M040 ID22K256 ID22K512 ID22M010 ID22M020 ID22M040 ID22M080	OCR Scan	PDF	Core28 IR2C24A/AN IR2C26 IR2C30/N IR2C32 IR2C33 IR2C34 IR2C36 IR2C38/N IR2C43 IR2E27A IR2C53 IR2E02 IR2E27 IR2E10 IR3N34 IR2E31A IR2E01 IR2C07 ir2e31
Untitled Abstract: No abstract text available Text: CMOS 64M 8M x 8/4M x 16 MROM FEATURES • 8,388,608 words x 8 bit organization (Byte mode) 4,194,304 words x 16 bit organization (Word mode) • Access time: 150 ns (MAX.) • Power consumption: Operating: 385 mW (MAX.) Standby: 550 \i\N (MAX.) • Static operation	OCR Scan	PDF	44-pin, 600-mil 44-PIN D15/A. 600-rnil LH5364000 OP044-P-0600)
Untitled Abstract: No abstract text available Text: CMOS 64M 8 M x 8/4 M x 16 MROM FEATURES 44-P IN SO P T O P V IE W s "N < EL • 8,388,608 words x 8 bit organization (Byte mode) 4,194,304 words x 16 bit organization (Word mode) PIN CONNECTIONS A -\|8 IZ 43 — I a 19 A 17IZ 3 42 ^ Ag • Access time: 150 ns (MAX.)	OCR Scan	PDF	44-pin, 600-mil LH5364000 64M-bit LH5364000 44SOP OP044-P-0600)