Untitled
Abstract: No abstract text available
Text: S A M S U N G E L E C T R O N I C S INC b7E » • 7 ^4 1 4 5 KM536512W/WG 0 D1 5 2 1 5 54T ■ SMGK DRAM MODULES 512KX36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: tR A C KMM536512W-6 60ns 15ns 110ns KMM536512W-7 70ns 20ns
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KM536512W/WG
512KX36
KMM536512W-6
110ns
130ns
KMM536512W-8
150ns
KMM536512W
KMM536512WG:
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lf7a
Abstract: No abstract text available
Text: SSP7N60A Advanced Power MOSFET FEATURES BVdss - 600 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on = ■ Lower Input Capacitance ■ Improved Gate Charge lD = 7 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 mA (Max.) @ V DS = 600V
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SSP7N60A
O-220
00M1N
DD3b33D
lf7a
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equivalent ka431lz
Abstract: 431 regulator
Text: KA431 Industrial ELECTRONICS P R O G R A M M A BLE SHUNT R EG ULATO R TO-92 The KA431/A are three-terminal adjustable regulator series with a guaranteed thermal stability over applicable temperature ranges. The output voltage may be set to any value between V REF approximately 2.5
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KA431
KA431/A
003bl3S
8-DP-300
U-DP-300
equivalent ka431lz
431 regulator
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60-158
Abstract: No abstract text available
Text: CS-500300 ELECTRONICS POWOF G b A S FET S am su n g M icro w ave S em ico n d u cto r A pril 1996 800-1000 MHz Prelim inary Description The CS-500300 is a 10.8 mm n-channel M ESFET with 1 nm gate length that is processed with Samsung Microwave’s power optimized P20 process. Ti/Pt/Au
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CS-500300
CS-500300
lb4142
60-158
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Untitled
Abstract: No abstract text available
Text: KMM466F104AT-L KMM466F124AT-L DRAM MODULE KMM466F104AT-L & KMM466F124AT-L EDO Mode without buffer 1Mx64 based on 1Mx16, 1K & 4K Refresh, 3.3V, Low Power/Self-Refresh GEN ER AL DESC RIPTIO N FEATURES The Samsung KMM466F10 2 4AT-L is a 1M bit x 64 Dynamic RAM high density memory module. The
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KMM466F104AT-L
KMM466F124AT-L
KMM466F124AT-L
1Mx64
1Mx16,
KMM466F10
1Mx16bit
44-pin
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KM48C512DJ
Abstract: G0353
Text: K M 4 8 C 5 12 D J CMOS DRAM 512K x 8 Bit CMOS Dynamic HAM with Fast Page Mode DESCRIPTION This is a family of 524,288 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time
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KM48C5
512Kx8
KM48C512DJ
71L41H2
KM48C512DJ
G0353
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Untitled
Abstract: No abstract text available
Text: KM718B90 64Kx18 Synchronous SRAM 64K X 18-Bit Synchronous Burst SRAM FEATURES GENERAL DESCRIPTION • Synchronous Operation. • On-Chip Address Counter. • Self-Timed Write Cycle. • On- Chip Address and Control Registers. • Single 5V±5% Power Supply.
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KM718B90
64Kx18
18-Bit
52-Pin
KM718B90
66MHz
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Untitled
Abstract: No abstract text available
Text: KM4216C/V256 CMOS VIDEO RAM 256K X 16 Bit CMOS Video RAM FEATURES The RAM array consists of 512 bit rows of 8192 bits. It operates like a conventional 256K x 16 CMOS DRAM. The RAM port has a write per bit mask capability. Data may be written with New and Old Mask. The RAM port
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KM4216C/V256
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KM29V32000TS
Abstract: No abstract text available
Text: KM29V32000TS ELECTRONICS Fl as h 4M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization The KM29V32000TS/RS is a 4M 4,194,304 x8 bit NAND Flash memory with a spare 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for the mass
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KM29V32000TS
250us
KM29V32000TS
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9914E
Abstract: No abstract text available
Text: SAMSUNG SEMICONDUCTOR INC 14E D | 00G7äfc.a T . s> KS82C50A 1 | - 7 5 - 3 7 '0 5 CMOS ASYNCHRONOUS COMMUNICATION ELEMENT ACE Preliminary FEATURES/BENEFITS DESCRIPTION Single Chip UAR17BRG DC to 10MHz Operation, (DC to 625K Baud) Crystal or External Clock Input
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KS82C50A
UAR17BRG
KS82C50A
0-10MHz
82C50A
9914E
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RB414
Abstract: B4145 KM44V4004BK
Text: KM44V4004BK CMOS DRAM ELECTRONICS 4 M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power
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KM44V4004BK
16Mx4,
512Kx8)
RB414
B4145
KM44V4004BK
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ttl 74112
Abstract: KMM594000 KMM594000-10 KMM594000-8 KM41C4000J 74112
Text: SAMSUNG ELECTRONICS INC 4 2E » 7^4142 KM M594000 001D4Û2 b • DRAM MODULES 4 M x 9 CMOS DRAM Memory Module FEATURES GENERAL DESCRIPTION • P erform ance range: T h e S am su ng K M M 59 4 0 00 is a 4 M b l t x 9 D yn am ic R A M high de n s ity m em ory m odu le. T h e S a m s u n g
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KMM594000
0G104Ã
KMM594000-8
150ns
KMM594000-10
100ns
180ns
cycles/16ms
KMM594000
ttl 74112
KM41C4000J
74112
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C1204B
Abstract: t2g memory
Text: KM416C1204BJ CMOS DRAM 1M x16B it CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power
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KM416C1204BJ
16Bit
C1204B
t2g memory
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km29n16000at
Abstract: c60h - dc
Text: PRELIMINARY KM29N16000AT/R FLASH MEMORY 2M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Organization The KM29N16000AT/R is a 2M 2,097,152 x8 bit NAND Flash memory with a spare 64K(65,536)x8 bit. Its NAND cell provides the most cost-effective solution for the mass
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KM29N16000AT/R
250us
ib4142
km29n16000at
c60h - dc
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Untitled
Abstract: No abstract text available
Text: KM44C4003A/AL/ALL/ASL CMOS DRAM 4M x 4 Bit CMOS Quad CAS DRAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tRAC tCAC tRC 13ns 90ns K M 44C 4003A /A L/A LL/A S L-5 50ns K M 44C 4003A /A L7A LL/A SL-6 60ns 15ns 110ns K M 44C 4003A /A L/A LL/A S L-7
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KM44C4003A/AL/ALL/ASL
110ns
130ns
003A/AI7ALLVASL-8
150ns
KM44C4003A/AL/ALL/ASL
28-LEAD
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Untitled
Abstract: No abstract text available
Text: KMM374F1680AK KMM374F1600AK DRAM MODULE KMM374F1680AK & KMM374F1600AK EDO Mode without buffer 16Mx72 DRAM DIMM with ECC based on 16Mx4, 8K & 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM374F168 0 0AK is a 16M bit x 72 Dynamic RAM high density memory module. The
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KMM374F1680AK
KMM374F1600AK
KMM374F1600AK
16Mx72
16Mx4,
KMM374F168
16Mx4bit
400mil
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Untitled
Abstract: No abstract text available
Text: b7E T> m TTbMlME G01S111 S04 SAMSUNG ELECTRONICS INC DRAM MODULES KMM594020B 4M x9 DRAM SIMM Memory Module, Low Power FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM594020B is a4 M b its x 9 Dynamic RAM high density memory module. The Samsung KMM594020B
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G01S111
KMM594020B
KMM594020B
20-pin
30-pin
22/iF
KMM594020B-6
110ns
KMM594020B-7
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Untitled
Abstract: No abstract text available
Text: KMM37 2 V 4 0 0 B K D R A M Mo d u l e ELECTRO NICS KMM372V400BK/BS / KMM372V41OBK/BS Fast Page Mode 4Mx72 DRAM DIMM with ECC, 4K & 2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES • Part Identification The Samsung KMM372V40 1 0B is a 4M bit x 72 Dynamic RAM high density memory module. The
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KMM37
KMM372V400BK/BS
KMM372V41OBK/BS
4Mx72
KMM372V40
KMM372V400BK
cycles/64ms
300mil
KMM372V41OBK
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f0035
Abstract: SMP-22203 017t
Text: SMP-22203 ELECTRONICS D lO l B Ï 3 S Lo w N o is e A m p life r S a m s u n g M ic ro w a v e S e m ic o n d u c to r 1.8 - 3 .0 G H z Description Features The SMP-22203 is a high performance Gallium Arsenide GaAs Monolithic Microwave Integrated Circuit (MMIC)
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SMP-22203
SMP-22203
71bmHS
f0035
017t
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511ML
Abstract: 243L3 tsop 338 IR
Text: FLASH M EM ORY KM 29V32000TS/RS 4M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization - Memory Cell Array : 4 M +128K bit x 8bit - Data Register : (512 + 16)bit x 8bit • Automatic Program and Erase - Page Program : (512 + 1S)Byte
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KM29V32000TS/RS
250us
0D243A2
511ML
243L3
tsop 338 IR
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC MC4558C 42E D • 7^ b M m 2 DOD^mi D mSMGK LINEAR INTEGRATED CIRCUIT a sop DUAL OPERATION AMPLIFIER The MC4558 is a monolithic integrated circuit designed for dual operational amplifier. FEATURES • • • • « D IP No frequency compensation
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MC4558C
MC4558
MC4558CN
MC4558CD
lb4142
50K100K
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Untitled
Abstract: No abstract text available
Text: CMOS VIDEO RAM KM4216C/V256 256K X 16 Bit CMOS Video RAM The RAM array consists of 512 bit rows of 8192 bits. FEATURES It operates like a conventional 256K x 16 CMOS DRAM. The RAM port has a write per bit mask capability. Data may be written with New and Old Mask. The RAM port
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KM4216C/V256
tR6C/V256
D0277Ã
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Untitled
Abstract: No abstract text available
Text: KM29V16000AR Flash ELECTRONICS 2M x 8 Bit NAND Flash Memory GENERAL DESCRIPTION FEATURES •Single 3.3-volt Supply • Organization - Memory Cell Array : 2M +64K bit x 8bit - Data Register : (256 + 8)bit x 8bit • Automatic Program and Erase - Page Program : (256 + 8)Byte
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KM29V16000AR
250us
003170b
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Untitled
Abstract: No abstract text available
Text: KM44C4003BK CMOS D R A M ELECTRONICS 4 M x 4 Bit CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4bit Quad CAS with Fast Page Mode DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 2K Ref. or 4K Ref. , access time
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KM44C4003BK
G03444b
GD34447
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