AGR19045XF
Abstract: No abstract text available
Text: Preliminary Data Sheet June 2004 AGR19045EF 45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19045EF is a 45 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for
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AGR19045EF
Hz--1990
AGR19045XF
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TH 2190 HOT Transistor
Abstract: No abstract text available
Text: Preliminary Data Sheet March 2004 AGR21180EF 180 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband
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AGR21180EF
TH 2190 HOT Transistor
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12065G105AT2A
Abstract: j292 MRF7S18125 F 365 R A114 A115 AN1955 C101 JESD22 RF35
Text: Freescale Semiconductor Technical Data Document Number: MRF7S18125BH Rev. 0, 11/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S18125BHR3 MRF7S18125BHSR3 Designed for GSM and GSM EDGE base station applications with
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MRF7S18125BH
MRF7S18125BHR3
MRF7S18125BHSR3
MRF7S18125BHR3
12065G105AT2A
j292
MRF7S18125
F 365 R
A114
A115
AN1955
C101
JESD22
RF35
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BTS 132 SMD
Abstract: No abstract text available
Text: PD57002-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Datasheet — production data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 2 W with 15dB gain @ 960 MHz / 28 V ■ New RF plastic package
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PD57002-E
PowerSO-10
BTS 132 SMD
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bare die zener
Abstract: zener wafer
Text: SD5000 / SD5400 SERIES Linear Systems replaces discontinued Siliconix SD* product line SD5000 / SD5400 series Quad N-Channel Enhancement Mode DMOS Lateral Switches SD5000 / SD5400 ultra-fast switches offer improved accuracy, speed and throughput, with less glitching or distortion than JFETs
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SD5000
SD5400
SD5400
70ohms
bare die zener
zener wafer
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MRF6S21140HR3
Abstract: MRF6S21140HSR3 AN1955 MRF6S21140H D2080 Nippon capacitors
Text: Freescale Semiconductor Technical Data Document Number: MRF6S21140H Rev. 5, 2/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
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MRF6S21140H
MRF6S21140HR3
MRF6S21140HSR3
MRF6S21140HSR3
AN1955
MRF6S21140H
D2080
Nippon capacitors
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Untitled
Abstract: No abstract text available
Text: Extract from the online catalog HC-B 24-TFQ-76/M1PG21S Order No.: 1771765 Sleeve housing, for double locking latch, height 76 mm, with screw connection, 1x Pg21, lateral cable entry
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24-TFQ-76/M1PG21S
PC-2009)
24-TFQ-76/M1PG21S
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D201
Abstract: No abstract text available
Text: Extract from the online catalog HC-B 24-TMB-100/O1STM40S-STA Order No.: 1604625 HEAVYCON ADVANCE standard powder-coated sleeve housing B24, with bayonet locking, height 100 mm, with 1xM40 thread, lateral cable
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24-TMB-100/O1STM40S-STA
1xM40
PC-2009)
24-TMB-100/O1STM40S-STA
Torx20,
D201
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AGR18125EF
Abstract: AGR18125E AGR18125EU AGR18125XF AGR18125XU JESD22-C101A
Text: Product Brief April 2004 AGR18125E 125 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18125E is a 125 W, 26 V, N-channel goldmetallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor
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AGR18125E
AGR18125E
PB04-078RFPP
PB04-012RFPP)
AGR18125EF
AGR18125EU
AGR18125XF
AGR18125XU
JESD22-C101A
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MRF9045
Abstract: MRF9045S MRF9045SR1
Text: MOTOROLA Order this document by MRF9045/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices
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MRF9045/D
MRF9045
MRF9045S
MRF9045SR1
MRF9045
MRF9045S
MRF9045SR1
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ericsson alarm list
Abstract: No abstract text available
Text: Configuring A Line Card This line card requires IPaction version 3.0 or later. To configure the line card see Configure Interfaces in the IPaction Software Configuration Guide on the documentation CD or the internet. Removing A Line Card 1. Loosen the screws located on both ends of the faceplate.
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OC-12c/STM-4
ericsson alarm list
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960-1215 MHz transistor 20W
Abstract: CAPACITOR 33PF electrolytic capacitor, .1uF 470uf, 35v electrolytic capacitor capacitor 470uf/63v 0912LD20 ADG419 capacitor 226 20V 47pf 55QT
Text: 0912LD20 20 Watts, 28 Volts Pulsed Avionics 960 to 1215 MHz LDMOS FET CASE OUTLINE 55QT Common Source GENERAL DESCRIPTION The 0912LD20 is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 20Wpk of RF power from 960 to 1215 MHz.
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0912LD20
0912LD20
20Wpk
960-1215 MHz transistor 20W
CAPACITOR 33PF
electrolytic capacitor, .1uF
470uf, 35v electrolytic capacitor
capacitor 470uf/63v
ADG419
capacitor 226 20V
47pf
55QT
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capacitor siemens 4700 35
Abstract: No abstract text available
Text: PTF 10122 50 Watts WCDMA, 2.1–2.2 GHz GOLDMOS Field Effect Transistor Description • The PTF 10122 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for WCDMA applications from 2.1 to 2.2 GHz. It is rated at 50 watts power output, with 11 dB of
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1-877-GOLDMOS
1301-PTF10122
capacitor siemens 4700 35
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J64-1
Abstract: UPF20120 ultrarf J296 J6-41 J641
Text: URFDB Sec 12_20120 11/3/99 11:19 AM Page 12-1 UPF20120 120W Push-Pull, 2GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Description This device is designed for base station applications up to frequencies of 2GHz. Rated with a minimum
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UPF20120
30dBc
J64-1
UPF20120
ultrarf
J296
J6-41
J641
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J216
Abstract: UPF1030 J2-13
Text: URFDB Sec 05_1030 11/3/99 10:39 AM Page 5-1 UPF1030 30W, 1GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Description This device is designed for base station applications up to frequencies of 1GHz. Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA, GSM, FM,
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UPF1030
30dBc
J216
UPF1030
J2-13
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J593
Abstract: AGR21030E AGR21030EF AGR21030EU JESD22-C101A J157
Text: Preliminary Data Sheet April 2004 AGR21030E 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband
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AGR21030E
AGR21030E
AGR21030EU
AGR21030EF
DS04-163RFPP
DS04-065RFPP)
J593
AGR21030EF
AGR21030EU
JESD22-C101A
J157
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AGERE
Abstract: AGR21045F AGR21045U AGR26045E AGR26045EF AGR26045EU AGR26045XF AGR26045XU JESD22-C101A
Text: Preliminary Product Brief April 2004 AGR26045E 45 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR26045E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications
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AGR26045E
AGR26045E
AGR26045EU
AGR26045EF
PB04-080RFPP
PB04-022RFPP)
AGERE
AGR21045F
AGR21045U
AGR26045EF
AGR26045EU
AGR26045XF
AGR26045XU
JESD22-C101A
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729h
Abstract: Z8*6421 Z8F642 PS019913-0305
Text: High Performance 8-Bit Microcontrollers Z8 Encore! 64K Series Product Specification PS019913-0305 Preliminary ZiLOG Worldwide Headquarters • 532 Race Street • San Jose, CA 95126-3432 Telephone: 408.558.8500 • Fax: 408.558.8300 • www.ZiLOG.com This publication is subject to replacement by a later edition. To determine whether
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PS019913-0305
729h
Z8*6421
Z8F642
PS019913-0305
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PAXI
Abstract: No abstract text available
Text: High-Performance 8-Bit Microcontrollers Z8 Encore! XP F0830 Series Product Specification PS025107-1206 This publication is subject to replacement by a later edition. To determine whether a later edition exists, or to request copies of publications, visit www.zilog.com.
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F0830
PS025107-1206
PAXI
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DE MATRIX DE LEDS 7X5
Abstract: matrix 7x5 leds A19N JTAG header 7x2 footprint MT5656SMI MT5600SMI SF56D SC56H 25X2 schematic using 74LVC244A 1.vcc so8 flash rom i2c
Text: eZ80F92 Development Kit User Manual PRELIMINARY UM013904-0203 ZiLOG Worldwide Headquarters • 532 Race Street • San Jose, CA 95126 Telephone: 408.558.8500 • Fax: 408.558.8300 • www.ZiLOG.com eZ80F92 Development Kit User Manual ii This publication is subject to replacement by a later edition. To determine whether a later
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eZ80F92
UM013904-0203
DE MATRIX DE LEDS 7X5
matrix 7x5 leds
A19N
JTAG header 7x2 footprint
MT5656SMI MT5600SMI SF56D SC56H
25X2
schematic using 74LVC244A
1.vcc so8 flash rom i2c
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zilog sl 1925
Abstract: ZiLOg sl1925 Z86CCP01ZEM SL 1925 SL1925 Z86E0208 R242 R243 R246 Z86E02
Text: Z86E02 SL 1925 General-Purpose OTP MCU with 14 I/O Lines Product Specification PS014802-0903 Title Page ZiLOG Worldwide Headquarters • 532 Race Street • San Jose, CA 95126 Telephone: 408.558.8500 • Fax: 408.558.8300 • www.ZiLOG.com This publication is subject to replacement by a later edition. To determine whether
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Z86E02
PS014802-0903
zilog sl 1925
ZiLOg sl1925
Z86CCP01ZEM
SL 1925
SL1925
Z86E0208
R242
R243
R246
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C3182N
Abstract: C3888A 2sd 3420 2SC2268 2sc2073-2 EP 1408 3884A 3182N 2SD 388A 2SA855
Text: •DISCONTINUED ty p e lis t T h e fo llo w in g D evices are d isco n tin u ed as o f J u n e 1994, a n d a re n o lo n g e r a v a ila b le . Please refer o f th e list fo r later device a lte rn a tiv e s . T y p e No. R ecom m end R eplacem ent T ypp Nn
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2SA51
2SA57
2SC3281
2SD1571
C3182N
C3888A
2sd 3420
2SC2268
2sc2073-2
EP 1408
3884A
3182N
2SD 388A
2SA855
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Motorola MRF183
Abstract: GS -L Capacitor
Text: MOTOROLA O rder this docum ent by M RF183/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF183 MRF183S, R1 N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequen
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RF183/D
MRF183/D
Motorola MRF183
GS -L Capacitor
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SD5000N
Abstract: SD5001 sd5001 siliconix SD5001N sd5400 aros SD5400CY SD5000 SILICONIX SD5000
Text: T e m ic SD5000/5400 Series Siliconix N-Channel Lateral DMOS FETs SD5000I SD5400CY SD5000N SD5401CY SD5001N Product Summary Part Number v BR Ds Min (V) VGS(th) Max (V) SD5000I 20 1.5 SD5000N 20 1.5 SD5001N 10 1.5 SD5400CY 20 1.5 SD5401CY 10 1.5 For applications information see AN301, page 12-33.
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SD5000/5400
SD5000I
SD5000N
SD5001N
SD5400CY
SD5401CY
AN301,
SD5001
sd5001 siliconix
sd5400
aros
SD5000 SILICONIX
SD5000
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