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    1L43

    Abstract: wf vqc 10 d a6 MH 7420 MSM8128-8S
    Text: MOSAIC SEMICONDUCTOR INC S3E ]> Inoe L3S337T 0GG123D 234 128K x 8 SHAM molate MSM8128-85/10/12 Issue 3.0 : October 1992 Semiconductor f Pin Definition NC A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 AO DO D1 02 GNO 131,072 x 8 CMOS High Speed Static RAM Features Fast Access Times of 85/100/120 ns


    OCR Scan     		PDF L3S337T 0GG123D MSM8128-85/10/12 10tiW MIL-STD-883 1L43 wf vqc 10 d a6 MH 7420 MSM8128-8S

    Untitled

    Abstract: No abstract text available
    Text: MOSAIC SEMICONDUCTOR INC 40E » m ^33337^ □ □ G 0 3 2 ci ? ^ M O C 7 ^ -2 3 -/y 512K x 8 SRAM Module Issue 1.0 : April 1991 Mosaic MS8512RKX/A-55/70/85 Semiconductor ADVANCE PRODUCT INFORMATION Inc. 524,288 x 8 CMOS High Speed Static RAM Pin Definition


    OCR Scan     		PDF G032c MS8512RKX/A-55/70/85 L3S337* SM8512RKX/A-55f7Q/85 MS8512RKXLI-55 ASIC-90Â

    LM 7420

    Abstract: No abstract text available
    Text: 512K x 8 FLASH mosaic MFM8516-80/90/12/15 Issue 4.1: March 1997 semiconductor, inc. 524,288 bit FLASH EEPROM Features Description • 4 Megabit FLASH memory. The MFM8516 is a 4 Megabit CMOS 5.0V only FLASH Monolithic memory organised as 512K X 8. Access times of 80, 90,120 and 150 ns are


    OCR Scan     		PDF MFM8516 b3S337T 002Lic MFM8516GMB-80E MIL-STD-883 512Kx b35337T LM 7420

    67S4000A

    Abstract: 3D-30 A45 so
    Text: mosaic 128KX 3 2 SRAM Module PUMA67S4000/A-45/55/70 semiconductor, inc. Issue 4.0: March 1996 4,194,304 bit CMOS High Speed Static RAM Description The PUMA67S4000/A is a 4Mbit CMOS High Speed Static RAM organised as 128kx 32 in a JEDECJ-leaded Ceramic Surface Mount


    OCR Scan     		PDF PUMA67S4000/A 128kx availableare45ns, 55nsand70ns. 44mWAnd MIL-STD-883 BS9400 PUMA67S4000/A-45/55/70 FastAccessTimesof45/55/70ns. 67S4000A 3D-30 A45 so

    Untitled

    Abstract: No abstract text available
    Text: M O S E L V IT E L IC V53C8257H U LTR A -HIG H SPEED, 256KX 8B IT P A G E M O D E WITH E X TE N D E D DATA O U T P U T ED O A N D C A S B U R S T M O D E CM O S D YN A M IC R A M PR E LIM IN A R Y 45/45L 50/50L 55/55L 60/60L Max. RAS Access Time, Orac)


    OCR Scan     		PDF V53C8257H 256KX 45/45L 50/50L 55/55L 60/60L V53C8257H VS3C8257H

    Untitled

    Abstract: No abstract text available
    Text: M O S EL V IT E L IC V53C8129H ULTRA-HIGH PERFORMANCE, 128K X 8 BIT EDO PAGE MODE CMOS DYNAMIC RAM PRELIMINARY 35 40 45 50 Max. RAS Access Time, tRAC 35 ns 40 ns 45 ns 50 ns Max. Column Address Access Time, (Icu ò 18 ns 20 ns 22 ns 24 ns Min. Fast Page Mode With EDO Cycle Time, (tpC)


    OCR Scan     		PDF V53C8129H V53C8129H-50 24-pin 26/24-pin QD03fl3b

    Untitled

    Abstract: No abstract text available
    Text: MOSEL VITELIC P R E LIM IN A R Y V53C16256H 2 5 6 K X 16 F A S T P A G E M O D E CM O S D YN A M IC R A M HIGH PERFORMANCE 40 45 50 60 40 ns 45 ns 50 ns 60 ns 20 ns 22 ns 24 ns 30 ns Min. Fast Page Mode Cycle Time, tPC 23 ns 25 ns 28 ns 35 ns Min. Read/Write Cycle Time, (tRC)


    OCR Scan     		PDF V53C16256H 110ns V53C16256H L3S3311 40-Pin b353311 0003b0fl

    v110h

    Abstract: V53C104F
    Text: M O S E L VTTELÊ C V53C 104F H IG H PE R FO RM A N CE, L O W P O W E R 2 5 6 K X 4 B IT F A S T P A G E M O D E CM O S D Y N A M IC R A M 60/60L 70/70L 80/80L Max. RAS Access Time, tRAC 60 ns 70 ns 80 ns Max. Column Address Access Time, (tCAA) 30 ns 35 ns


    OCR Scan     		PDF V53C104F V53C104F 60/60L 70/70L 80/80L V53C104FL 200mA 200nA V53C104F-80 V53C104F-1 v110h

    P 600 I 1903

    Abstract: moc 4-pin
    Text: MOSAIC SEMICONDUCTOR INC hHE D • b a S B a ? 1! 000E057 SOS ■ M O C 128KX 32 EEPROM MODULE molate PUMA 67E4000X-15/20/25 Issue 1.2: Septembed 993 ADVANCE PRODUCT INFORMATION S e m ic o n d u c to r Inc " 4,194,304 bit MNOS High Speed EEPROM Features •


    OCR Scan     		PDF 000E057 128KX 67E4000X-15/20/25 MIL-STD-883 P 600 I 1903 moc 4-pin

    mrah

    Abstract: No abstract text available
    Text: M O SE L VÊTEUC V53C104N H IG H PERFO RM ANCE, 3.3 VO LT 2 5 6 K X 4 B IT F A S T P A G E M O D E C MOS D YN A M IC R A M HIGH PERFORMANCE V53C104N 60/60L 70/70L 80/80L Max. RAS Access Time, tRAC 60 ns 70 ns 80 ns Max. Column Address Access Time, (tCAA)


    OCR Scan     		PDF V53C104N V53C104N 60/60L 70/70L 80/80L V53C104NL V53C104N-80 mrah

    Untitled

    Abstract: No abstract text available
    Text: MOSEL — VITELIC 4flE D MOSEL b3S33Tl Q O Q O i m MOVI 5 MS72215/16 & MS72225/26 ADVANCE INFORMATION 512 x 18 & 1024 x 18 Parallel Synchronous FIFOs FEATURES DESCRIPTION • Full C M O S clocked synchronous FIFO s The MS72215/16 and MS72225/26 are clocked registered FIFOs


    OCR Scan     		PDF b3S33Tl MS72215/16 MS72225/26 18-bit

    V53C104D

    Abstract: No abstract text available
    Text: M O S E L V IT E U C V53C104D HIGH PERFORMANCE, LO W POWER 256K X 4 B IT FAS T PAG E MODE CMOS DYNAMIC RAM PRELIMINARY 60 HIGH PERFORMANCE V53C104D 70 80 Max. RAS Access Time, tRAC 60 ns 70 ns 80 ns Max. Column Address Access Time, 0CAA) 30 ns 35 ns 40 ns


    OCR Scan     		PDF V53C104D V53C104D V53C104D-80 V53C104D-1 V53C104t b3S33Tl D2731

    Untitled

    Abstract: No abstract text available
    Text: M O S E L V IT E L IC PRELIMINARY V53C16256H 2 5 6 K x 16 FAST PAGE MODE CMOS DYNAMIC RAM 40 45 50 60 Max. RAS Access Time, Orac 40 ns 45 ns 50 ns 60 ns Max. Column Address Access Time, ^ M ) 20 ns 22 ns 24 ns 30 ns Min. Fast Page Mode Cycle Time, (V>c)


    OCR Scan     		PDF V53C16256H 16-bit L3S33 40-Pin 40/44L-Pln

    Untitled

    Abstract: No abstract text available
    Text: M O S E L V tT E L IC MS6264H 8K x 8 HIGH SPEED CMOS STATIC RAM Preliminary Features Description • High-speed - 15/20 ns ■ Low Power dissipation: — 825mW Max. Operating — 550(xW (Max.) Power Down ■ 5 V + 10% supply ■ Fully static operation ■ TTL compatible I/O


    OCR Scan     		PDF MS6264H 825mW MS6264H 536-bit 28-pin MS6264H-15NC MS6264H-15RC MS6264H-20NC MS6264H-20RC

    Untitled

    Abstract: No abstract text available
    Text: M O SEL VETEUC V52C4256 MULTIPORT VIDEO RAM WITH 256K X 4 DRAM AND 512 X 4 SAM HIGH PERFORMANCE V52C4256 60 70 80 10 Max. RAS Access Time, tRAC 60 ns 70 ns 80 ns 100 ns Max. CAS Access Time, (tCAC) 15 ns 20 ns 25 ns 25 ns Max. Column Address Access Time, (1M )


    OCR Scan     		PDF V52C4256 V52C4256 GG030bS

    Untitled

    Abstract: No abstract text available
    Text: 128Kx 32 FLASH Module molaic PUMA 2F4001 -12/15/20 Issue 1.1 rNovember 1993 ADVANCE PRODUCT INFORMATION S e m ic o n d u c to r 4,194,304 bit CMOS FLASH Memory Pin Definition Features 1 o 08 o 09 o 010 o A14 o A16 o A11 o Access Times of 120 /150 /200 User Configurable as 8 / 1 6 / 3 2 bit wide output.


    OCR Scan     		PDF 128Kx 2F4001 103Cycles MIL-STD-883 b3S337T 2F4001-12/15/20 2F4001MB-20 MIL-STD-883C

    Untitled

    Abstract: No abstract text available
    Text: MFM8T516-90/12/15 mosaic 512K x 8 FLASH Issue 4.2 June 1996 semiconductor, inc. 524,288 bit FLASH EEPROM Description Features The MFM8T516 is a 4 Megabit CMOS 5.0V only • FLASH Monolithic memory organised as 512K X 8. • Access times of 90 ,1 20 and 150 ns are available.


    OCR Scan     		PDF MFM8T516-90/12/15 MFM8T516 0002b42 MFM8T516SMB-90 MIL-STD-883. 8T516 512Kx b3S3371 00D2b43

    Untitled

    Abstract: No abstract text available
    Text: PUMA 3FI6006-90/12/15 mosaic semiconductor, inc. 512K X 32 FLASH MODULE Issue 4.0 August 1995 Description The PUMA. 3F16006 is a 16 Megabit CMOS 5.0V only FLASH Module in a 6 6 pin PGA package, lAfoich is configurable as 8 , 16, 32 bit wide using CE1-4. Access times of 90, 120 and 150 ns are


    OCR Scan     		PDF 3FI6006-90/12/15 3F16006 3F16006I-90 512Kx32,

    Q001

    Abstract: DHR48 V53C464
    Text: bSE M O SEL-VITELIC T> m b 3 S 3 3 T l Ü G Q lflM b b T l V53C464A FAMILY HIGH PERFORMANCE; LOW POWER 64K X 4 BIT FAST PAGE MODE CMOS DYNAMIC RAM 60/60L 70/70L 80/80L 10/10L Max. RAS Access Time, tRAC 60 ns 70 ns 80 ns 100 ns Max. Column Address Access Time, (tCAA)


    OCR Scan     		PDF b3S33Tl V53C464A 60/60L 70/70L 80/80L 10/10L 115ns V53C464AL V53C464A-10 Q001 DHR48 V53C464

    Untitled

    Abstract: No abstract text available
    Text: MOSEL-VITELIC fc.2E D MOSEL-VITELIC • V404J8 and V404J9 1MX9, 1 M X 8 B IT FA ST PAGE MODE CMOS DYNAMIC RAM M EM ORY MODULE HIGH PERFORMANCE V404J8/9 tp^ç 60/60L 70/70L 7 0 ns 8 0 ns 100 35 ns 4 0 ns 50 ns Min. Fast Page M ode Cycle Tim e, (tp c ) 4 5 ns


    OCR Scan     		PDF 0D0S377 V404J8 V404J9 60/60L V404J8/9 70/70L 80/80L 10/10L V404J8/9L

    2F400

    Abstract: by126 2F4001MB-20
    Text: molaic 128Kx 32 FLASH Module PUMA 2F4001-12/15/20 /X0255 Issue 1.1: March 1994 M o s a ic S e m ic o n d u c to r ADVANCE PRODUCT INFORMATION Inc. 4,194,304 bit CMOS FLASH Memory Pin Definition Features Access Times of 120 /150 /200 User Configurable as 8 / 1 6 / 3 2 bit wide output.


    OCR Scan     		PDF 128Kx 2F4001-12/15/20 /X0255 MIL-STD-883 A0-A16 D8-15 128KX8 DATA10 2F400 by126 2F4001MB-20

    Untitled

    Abstract: No abstract text available
    Text: M O S E L V IT E L IC V53C100H ULTRA-HIGH PERFORMANCE LOW POWER 1M X 1 BIT FAST PAGE MODE CMOS DYNAMIC RAM HIGH PERFORMANCE V53C100H 45/45L 50/50L 55/55L 60/60L Max. RAS Access Time, tRAC 45 ns 50 ns 55 ns 60 ns Max. Column Address Access Time, (tCAA) 22 ns


    OCR Scan     		PDF V53C100H 45/45L 50/50L 55/55L 60/60L V53C100HL V53C100H L3S3311

    Untitled

    Abstract: No abstract text available
    Text: MOSEL VtTEU C PRELIMINARY V400J32/36 4M x 32 & 4M X 36 CMOS MEMORY MODULES Features Description • The V 400J32 M em ory M odule is organized as 4,194,304 x 32 bits and the V400J36 is orgranized as 4,194,304 x 36 bits in a 72-lead single-in-line m odule. T he 4M x 32 m em ory m odule uses 32 4M x


    OCR Scan     		PDF V400J32/36 400J32 V400J36 72-lead x32/36 V400J32) b3S33Tl

    Untitled

    Abstract: No abstract text available
    Text: M OSEL VITELIC V43644R04V C TG-10PC 3.3 VOLT 4M x 64 HIGH PERFORMANCE PC100 UNBUFFERED SDRAM MODULE PRELIMINARY Features Description • 168 Pin Unbuffered 4,194,304 x 64 bit Oganization SDRAM Modules ■ Utilizes High Performance 4M x 16 SDRAM in TSOPII-54 Packages


    OCR Scan     		PDF V43644R04V TG-10PC PC100 TSOPII-54