KTB1366
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors TO-220F KTB1366 1. BASE TRANSISTOR PNP 2. COLLECTOR FEATURES Power dissipation PCM: 3. EMITTER 2 W (Tamb=25℃) 123 Collector current -3 A ICM: Collector-base voltage
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O-220F
O-220F
KTB1366
-50mA,
KTB1366
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KTD2058
Abstract: KTB1366
Text: SEMICONDUCTOR KTB1366 TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR GENERAL PURPOSE APPLICATION. A FEATURES C P E S B : VCE sat =-1.0V(Max.) at IC=-2A, IB=-0.2A. G ᴌCollector Power Dissipation : PC=25W (Tc=25ᴱ) ᴌComplementary to KTD2058. R T L K L M
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KTB1366
KTD2058.
O-220IS
KTD2058
KTB1366
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KTB1366 TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR GENERAL PURPOSE APPLICATION. A Low Collector Saturation Voltage C P S : VCE sat =-1.0V(Max.) at IC=-2A, IB=-0.2A. B E : PC=25W (Tc=25 G Collector Power Dissipation ) K Complementary to KTD2058.
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KTB1366
KTD2058.
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KTD2058
Abstract: KTD2058 Y KTB1366
Text: MCC omponents 21201 Itasca Street Chatsworth !"# $ % !"# KTB1366 Features • • • Low Collector Saturation Voltage: VCE sat =1.0V(Max.) at IC=2A, IB=0.2A Collector Power Dissipation: PC=25W(TC=25OC)
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KTB1366
KTD2058
O-220F
KTD2058
KTD2058 Y
KTB1366
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KTD2058
Abstract: KTD2058 DATASHEET KTB1 KTD2058 Y KTB1366
Text: SEMICONDUCTOR KTD2058 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A FEATURES C P E S B : VCE sat =1.0V(Max.) at IC=2A, IB=0.2A. G ᴌComplementary to KTB1366. R T L K L MAXIMUM RATING (Ta=25ᴱ) J RATING UNIT Collector-Base Voltage
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KTD2058
KTB1366.
O-220IS
KTD2058
KTD2058 DATASHEET
KTB1
KTD2058 Y
KTB1366
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors KTB1366 TO – 220 TRANSISTOR PNP 1. BASE FEATURES z Low Collector Saturation Voltage z Complementary to KTD2058 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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O-220
KTB1366
KTD2058
-50mA
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KTD2058
Abstract: KTB1366 KTD2058 Y
Text: SEMICONDUCTOR KTB1366 TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR GENERAL PURPOSE APPLICATION. A C S P Low Collector Saturation Voltage : VCE sat =-1.0V(Max.) at IC=-2A, IB=-0.2A. B E : PC=25W (Tc=25 G Collector Power Dissipation ) K Complementary to KTD2058.
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KTB1366
KTD2058.
KTD2058
KTB1366
KTD2058 Y
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KTD2058
Abstract: KTD2058 Y KTB1366
Text: SEMICONDUCTOR KTD2058 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A FEATURES ・Low Saturation Voltage C P : VCE sat =1.0V(Max.) at IC=2A, IB=0.2A. E K G B ・Complementary to KTB1366. L L MAXIMUM RATING (Ta=25℃) RATING UNIT
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KTD2058
KTB1366.
O-220IS
KTD2058
KTD2058 Y
KTB1366
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KTD2058 Y
Abstract: KTD2058 KTD2058 DATASHEET
Text: MCC omponents 21201 Itasca Street Chatsworth !"# $ % !"# KTD2058 Features • • Low Saturation Voltage: V CE sat =1.0V(Max.) at IC=2A, IB=0.2A Complementary to KTB1366 NPN General Purpose Application
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KTD2058
KTB1366
O-220F
KTD2058 Y
KTD2058
KTD2058 DATASHEET
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B1366
Abstract: KB1366 K b1366 Y b1366 equivalent KTB1366 B136-6 b1366 transistor
Text: SEMICONDUCTOR KTB1366 MARKING SPECIFICATION TO-220IS PACKAGE 1. Marking method Laser Marking or Ink Marking 2. Marking K B1366 Y 816 No. Item 1 KEC K KEC CORP. 2 Device Name B1366 KTB1366 3 hFE Grade Y O,Y 4 Lot No. 816 98.06.23 Revision No : Marking 00 Description
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KTB1366
O-220IS
B1366
B1366
KB1366
K b1366 Y
b1366 equivalent
KTB1366
B136-6
b1366 transistor
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors TO-220F KTB1366 TRANSISTOR PNP 1. BASE FEATURES z Low VCE(sat): VCE(sat)=-1.0V(Max.)(IC/IB=-2A/-0.2A) z Complementary to KTD2058 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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O-220F
O-220F
KTB1366
KTD2058
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KTB1366
Abstract: No abstract text available
Text: KTB1366 TO-220F KTB1366 1. BASE TRANSISTOR PNP 2. COLLECTOR FEATURES Power dissipation PCM: 3. EMITTER 2 W (Tamb=25℃) 123 Collector current ICM: -3 A Collector-base voltage -60 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃
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KTB1366
O-220F
-50mA,
KTB1366
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alternator diode 1776 B
Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)
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Hig86-755-3679515
alternator diode 1776 B
2az marking transistor sot-23
SMD SOT23 transistor MARK Y2
ic mb4213
NEC 12F triac
F10P048
ktc3114 equivalent
SMD TRANSISTOR MARKING 02N
DIODE PJ 57 ss14
BC517 equivalent
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khb*9D5N20P
Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC
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2N2904E
BC859
KDS135S
2N2906E
BC860
KAC3301QN
KDS160
2N3904
BCV71
KDB2151E
khb*9D5N20P
khb9d0n90n
6v Zener diode
khb*2D0N60P
transistor
KHB7D0N65F
BC557 transistor
kia*278R33PI
KHB9D0N90N circuit
ktd998 transistor
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LM8550
Abstract: KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960
Text: Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC 2N2222/A Motorola KTN2222/A 2SA1150 Toshiba KTA1272 2SA1510 Sanyo KRA1 10S 2SB546A NEC KTB 1369 2N2369/A Motorola KTN2369/A 2SA1151 NEC KTA1266 2SA1511 Sanyo KRA1 10M 2SB560 Sanyo
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2N2222/A
KTN2222/A
2SA1150
KTA1272
2SA1510
2SB546A
2N2369/A
KTN2369/A
2SA1151
KTA1266
LM8550
KTD2026
2SC2320 equivalent
NEC 12F DATASHEET
2N3904 MOTOROLA
2sc2240 equivalent
2N3906 MOTOROLA
2sc1983
2N5400 MOTOROLA
2SD1960
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KIA78*pI
Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC
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2N2904E
BC859
KDS135S
2N2906E
BC860
KAC3301QN
KDS160
2N3904
BCV71
KDB2151E
KIA78*pI
transistor
KIA78*p
TRANSISTOR 2N3904
khb*9D5N20P
khb9d0n90n
KID65004AF
TRANSISTOR mosfet
KIA7812API
khb*2D0N60P
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MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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oz960
Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors
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KIA7900PI
TC7SH04FU
KIC7SH04FU
SC604*
KAC3301QN
M51943
KIA7042AP/AF
TC7SH08FU
KIC7SH08FU
LT1937
oz960
khb*9D5N20P
MB4213
KIA78*pI
MN1280
F10P048
KIA7812A
MJE13007
mb4213 equivalent
TRANSISTOR SMD N2 3j
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MB4213
Abstract: F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD
Text: Table of Contents Index 5 SMD Transistors Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal Darlington Transistors
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SSIP-12
KIA6283K
KIA7217AP
SSIP-10
KIA6240K
KIA6801K
KIA6901P/F
MB4213
F10P048
mn1280
mb4213 equivalent
smd transistor zaa
diode zener ZD 15
ic mb4213
transistor 2AX SMD
252 B34 SMD ZENER DIODE
bc237 equivalent SMD
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KF6N60
Abstract: 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05
Text: Factory : #149, Gongdan-1-dong Gumi, Gyeongsangbuk-do, KOREA 上 http://www.kec.co.kr http://www.keccorp.com Head office : #275-5, Yangjae-dong, Seocho-gu Seoul, KOREA 海 ww 众 w. 韩 ck 授 b- 权 sh 代 .c 理 om 2014 Semiconductor Product Guide KEC CORPORATION
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USFB053
USFB13
USFB13A
USFB13L
USFB14
USFZ10V
USFZ11V
USFZ12V
USFZ13V
USFZ15V
KF6N60
2SK3850 equivalent
KF9N25
KF7N50
MDF10N65b transistor
PANASONIC ZENER
Kf10n60
KIA278R12PI equivalent
kid65003ap equivalent
kia578r05
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wv1 transistor
Abstract: KTD2058 KTB1366
Text: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTB1366 TRIPLE DIFFUSED PNP TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES • Low Collector Saturation Voltage : VcE sat =-1 .OV(Max.) at IC=-2A, IB=-0.2A. • Collector Power Dissipation : PC=25W (Tc=25°C)
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KTB1366
KTD2058.
220IS
wv1 transistor
KTD2058
KTB1366
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KTD2058 Y
Abstract: KTD2058 KTB1366
Text: _ SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. KTD2058 TRIPLE DIFFUSED NPN TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES • Low Saturation Voltage : VcE Sat =1.0V(Max.) (IC=2A, IB=0.2A). • Complementary to KTB1366. MAXIMUM RATINGS (Ta=25°C)
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KTD2058
KTB1366.
220IS
50x50xlmm
KTD2058 Y
KTD2058
KTB1366
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KTD2058 Y
Abstract: KTD2058 KTB1366
Text: SEMICONDUCTOR TECHNICAL DATA KTD2058 TRIPLE DIFFUSED NPN TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES • Low Saturation Voltage : VcE sat =1.0V(Max.) (Ic=2A, IB=0.2A). • Complementary to KTB1366. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage
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KTD2058
KTB1366.
220IS
50x50
50x50xlmm
KTD2058 Y
KTD2058
KTB1366
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KTD2058
Abstract: KTD2058 Y KTB1366
Text: SEMICONDUCTOR KTB1366 TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES • Low Collector Saturation Voltage : VcE sat =-1.0V(Max.) at lc=~2A, IB=-0.2A. • Collector Power Dissipation : PC=25W (Tc=25°C) • Complementary to KTD2058.
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KTB1366
KTD2058.
220IS
KTD2058
KTD2058 Y
KTB1366
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