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    Kinetic Technologies HK Ltd KTB1100EYAA-TE

    IC REG FLYBACK ADJ 1.5A 16SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey KTB1100EYAA-TE Reel 1,000 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2.4038
    • 10000 $2.28361
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    Mouser Electronics KTB1100EYAA-TE 265
    • 1 $4.55
    • 10 $3.87
    • 100 $3.35
    • 1000 $2.4
    • 10000 $2.28
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    IndustrialeMart KTB1-03010

    BARRIER STRIP 10P 30A 600VAC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey KTB1-03010 Bulk 53 1
    • 1 $15.36
    • 10 $15.36
    • 100 $15.36
    • 1000 $15.36
    • 10000 $15.36
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    IndustrialeMart KTB1-01006

    BARRIER STRIP 6P 5PCS BUNDLE
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    DigiKey KTB1-01006 Bulk 21 1
    • 1 $17.6
    • 10 $17.6
    • 100 $17.6
    • 1000 $17.6
    • 10000 $17.6
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    IndustrialeMart KTB1-06004

    BARRIER STRIP 4P 60A 600VAC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey KTB1-06004 Bulk 12 1
    • 1 $9.68
    • 10 $9.68
    • 100 $9.68
    • 1000 $9.68
    • 10000 $9.68
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    Kinetic Technologies HK Ltd KTB1100EYAA-MMEV01

    KTB1100 EVALUATION (EVAL) KIT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey KTB1100EYAA-MMEV01 Bulk 10 1
    • 1 $40.05
    • 10 $40.05
    • 100 $40.05
    • 1000 $40.05
    • 10000 $40.05
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    Mouser Electronics KTB1100EYAA-MMEV01 5
    • 1 $40.05
    • 10 $40.05
    • 100 $40.05
    • 1000 $40.05
    • 10000 $40.05
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    Find more KTB1 price and stock on Findchips.com

    KTB1 Datasheets (52)

    Part ECAD Model Manufacturer Description Curated Type PDF
    KTB1001 Korea Electronics TRANS GP BJT NPN 300V 0.15A 3-TO-220IS Scan PDF
    KTB1124 Korea Electronics Switching Transistor Original PDF
    KTB1124 Korea Electronics Switching Transistor Scan PDF
    KTB1124A Korea Electronics TRANS GP BJT PNP 50V 3A 3SOT-89 Original PDF
    KTB1124B Korea Electronics TRANS GP BJT PNP 50V 3A 3SOT-89 Original PDF
    KTB1124C Korea Electronics TRANS GP BJT PNP 50V 3A 3SOT-89 Original PDF
    KTB1151 Korea Electronics General Purpose Transistor Original PDF
    KTB1151 Korea Electronics General Purpose Transistor Original PDF
    KTB1151 Korea Electronics EPITAXIAL PLANAR PNP TRANSISTOR Scan PDF
    KTB1234T Korea Electronics Darlington Transistor Original PDF
    KTB1241 Korea Electronics General Purpose Transistor Original PDF
    KTB1241 Korea Electronics EPITAXIAL PLANAR PNP TRANSISTOR Scan PDF
    KTB1241 Korea Electronics General Purpose Transistor Scan PDF
    KTB1241GR Korea Electronics TRANS GP BJT PNP 80V 1A 3TO-92L Original PDF
    KTB1241O Korea Electronics TRANS GP BJT PNP 80V 1A 3TO-92L Original PDF
    KTB1241Y Korea Electronics TRANS GP BJT PNP 80V 1A 3TO-92L Original PDF
    KTB1260 Korea Electronics General Purpose Transistor Original PDF
    KTB1260 Korea Electronics EPITAXIAL PLANAR PNP TRANSISTOR Scan PDF
    KTB1260 Korea Electronics General Purpose Transistor Scan PDF
    KTB1366 Korea Electronics General Purpose Transistor Original PDF

    KTB1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KTB1367

    Abstract: KTD2059
    Text: SEMICONDUCTOR KTB1367 TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR GENERAL PURPOSE APPLICATION. A C S P Low Collector-Emitter Saturation Voltage : VCE sat =-2.0V(Max.). B E K G Complementary to KTD2059. L ) R M J MAXIMUM RATING (Ta=25 L SYMBOL RATING UNIT


    Original     		PDF KTB1367 KTD2059. KTB1367 KTD2059

    B1772

    Abstract: KTB1772
    Text: SEMICONDUCTOR KTB1772 MARKING SPECIFICATION TO-92 PACKAGE 1. Marking method Laser Marking 2. Marking K 016 B1772 Y No. Item 1 KEC K 2 Lot No. 016 01.03.09 Marking Description KEC CORP. Year 0 ~ 9 : 2000~2009 16 Week 16 : 16th Week 3 Device Name B1772 KTB1772


    Original     		PDF KTB1772 B1772 B1772 KTB1772

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors KTB1367 TO – 220F TRANSISTOR PNP 1. BASE FEATURES z Low Collector-Emitter Saturation Voltage z General Purpose Applications 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF O-220F KTB1367 -100V

    KTB1366

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors TO-220F KTB1366 1. BASE TRANSISTOR PNP 2. COLLECTOR FEATURES Power dissipation PCM: 3. EMITTER 2 W (Tamb=25℃) 123 Collector current -3 A ICM: Collector-base voltage


    Original     		PDF O-220F O-220F KTB1366 -50mA, KTB1366

    KTD1624

    Abstract: KTB1124 KTB1124C
    Text: SEMICONDUCTOR KTB1124 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR VOLTAGE REGULATORS, RELAY DRIVERS LAMP DRIVERS, ELECTRICAL EQUIPMENT A FEATURES C H ᴌAdoption of MBIT processes. G J B E ᴌLow collector-to-emitter saturation voltage. ᴌFast switching speed.


    Original     		PDF KTB1124 KTD1624. 250mm KTD1624 KTB1124 KTB1124C

    ktd2060

    Abstract: KTB1368
    Text: SEMICONDUCTOR KTD2060 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A FEATURES C DIM A B C D E F P F U ᴌGood Linearity of hFE. E S G B ᴌComplementary to KTB1368. R T L UNIT Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage


    Original     		PDF KTD2060 KTB1368. ktd2060 KTB1368

    k*d2061

    Abstract: KTD2061 ktD2061 transistor KTB1369
    Text: SEMICONDUCTOR KTB1369 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH VOLTAGE APPLICATION TV, MONITOR VERTICAL OUTPUT APPLICATION DRIVER STAGE APPLICATION COROR TV CLASS B SOUND OUTPUT APPLICATION A C DIM A B C D E F P F U B E S G FEATURES ᴌHigh Breakdown Voltage : VCEO=-180V Min.


    Original     		PDF KTB1369 -180V 100MHz KTD2061. k*d2061 KTD2061 ktD2061 transistor KTB1369

    KTD2058

    Abstract: KTB1366
    Text: SEMICONDUCTOR KTB1366 TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR GENERAL PURPOSE APPLICATION. A FEATURES C P E S B : VCE sat =-1.0V(Max.) at IC=-2A, IB=-0.2A. G ᴌCollector Power Dissipation : PC=25W (Tc=25ᴱ) ᴌComplementary to KTD2058. R T L K L M


    Original     		PDF KTB1366 KTD2058. O-220IS KTD2058 KTB1366

    KTB1368

    Abstract: KTD2060
    Text: SEMICONDUCTOR KTB1368 TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR GENERAL PURPOSE APPLICATION. A FEATURES C DIM A B C D E F P F U ᴌGood Linearity of hFE. E S G B ᴌComplementary to KTD2060. R T L UNIT Collector-Base Voltage VCBO -80 V Collector-Emitter Voltage


    Original     		PDF KTB1368 KTD2060. 100ms KTB1368 KTD2060

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTB1366 TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR GENERAL PURPOSE APPLICATION. A Low Collector Saturation Voltage C P S : VCE sat =-1.0V(Max.) at IC=-2A, IB=-0.2A. B E : PC=25W (Tc=25 G Collector Power Dissipation ) K Complementary to KTD2058.


    Original     		PDF KTB1366 KTD2058.

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTB1241 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. B D FEATURE ᴌHigh Breakdown Voltage and High Current A : VCEO=-80V, IC=-1A. ᴌLow VCE sat ᴌComplementary to KTD1863. P DEPTH:0.2 G C S Q R J K F MAXIMUM RATING (Ta=25ᴱ)


    Original     		PDF KTB1241 KTD1863. -500m -200m -100m

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTB1368 TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR GENERAL PURPOSE APPLICATION. A Good Linearity of hFE. C P S Complementary to KTD2060. G B E SYMBOL RATING L L UNIT R M J CHARACTERISTIC K MAXIMUM RATING Ta=25 VCBO -80 V Collector-Emitter Voltage


    Original     		PDF KTB1368 KTD2060. 100ms

    KTD2058

    Abstract: KTD2058 Y KTB1366
    Text: MCC   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# KTB1366 Features • • • Low Collector Saturation Voltage: VCE sat =1.0V(Max.) at IC=2A, IB=0.2A Collector Power Dissipation: PC=25W(TC=25OC)


    Original     		PDF KTB1366 KTD2058 O-220F KTD2058 KTD2058 Y KTB1366

    KTB1151

    Abstract: KTD1691 KTB1
    Text: SEMICONDUCTOR KTB1151 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT A B D C E FEATURES High Power Dissipation : PC=1.5W Ta=25 F Complementary to KTD1691. G H DIM A B C D E F G H J K L M N O P J MAXIMUM RATING (Ta=25


    Original     		PDF KTB1151 KTD1691. KTB1151 KTD1691 KTB1

    KTB1234T

    Abstract: KTD1854T
    Text: SEMICONDUCTOR KTB1234T TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR DRIVER APPLICATIONS. FEATURES AF amplifier, solenoid drivers, LED drivers. Darlington connection. High DC current gain. Very small-sized package permitting sets to be made smaller and slimer.


    Original     		PDF KTB1234T 600mm KTB1234T KTD1854T

    KTD1624

    Abstract: KTB1124 C200-400
    Text: SEMICONDUCTOR KTB1124 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR VOLTAGE REGULATORS, RELAY DRIVERS LAMP DRIVERS, ELECTRICAL EQUIPMENT FEATURES Adoption of MBIT processes. Low collector-to-emitter saturation voltage. Fast switching speed. Large current capacity and wide ASO.


    Original     		PDF KTB1124 KTD1624. KTD1624 KTB1124 C200-400

    KTB1423

    Abstract: KTD1413
    Text: SEMICONDUCTOR KTB1423 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS. A C P FEATURES B E G High DC Current Gain : hFE=1000 Min. at VCE=-3V, IC=-3A. High Collector Breakdown Voltage : VCEO=-120V (Min.)


    Original     		PDF KTB1423 -120V KTD1413. KTB1423 KTD1413

    KTB1260

    Abstract: KTD1898
    Text: SEMICONDUCTOR KTB1260 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES A 1W Mounted on Ceramic Substrate . C H Small Flat Package. G J B E Complementary to KTD1898. D MAXIMUM RATING (Ta=25 K ) CHARACTERISTIC DIM A B C D


    Original     		PDF KTB1260 KTD1898. -300m -100m 250mm KTB1260 KTD1898

    B1424

    Abstract: KTB1424
    Text: SEMICONDUCTOR KTB1424 MARKING SPECIFICATION TO-220IS PACKAGE 1. Marking method Laser Marking or Ink Marking 2. Marking K B1424 Y 816 No. Item 1 KEC K KEC CORP. 2 Device Name B1424 KTB1424 3 hFE Grade Y - 4 Lot No. 816 98.06.23 Revision No : Marking 00 Description


    Original     		PDF KTB1424 O-220IS B1424 B1424 KTB1424

    KTB1241

    Abstract: KTD1863
    Text: KEC SEMICONDUCTOR TECHNICAL D A TA KOREA ELECTRONICS CO.,LTD. KTB1241 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURE • High Breakdown Voltage and High Current : V ceo=-80V, Ic=-1A. • LOW V CE sat • Complementary to KTD1863. MAXIMUM RATINGS (Ta=25°C)


    OCR Scan     		PDF KTB1241 KTD1863. T0-92L KTB1241 KTD1863

    KTB1368

    Abstract: KTD2060 C251S IC105 25N20
    Text: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTD2060 TRIPLE DIFFUSED NPN TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES L • Good Linearity of Ii f e . • Complementary to KTB1368. MILLIMETERS uj MAXIMUM RATINGS Ta=25°C CHARACTERISTIC Collector-Base Voltage


    OCR Scan     		PDF KTD2060 KTB1368. 220IS KTB1368 KTD2060 C251S IC105 25N20

    KTB1772

    Abstract: KTD1882
    Text: KTB1772 SEMICONDUCTOR TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING FEATURES • Complementary to KTD1882. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC UNIT SYMBOL RATING Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage


    OCR Scan     		PDF KTB1772 KTD1882. KTB1772 KTD1882

    KTD1691

    Abstract: KTB1151
    Text: SEMICONDUCTOR TECHNICAL DATA KTD1691 EPITAXIAL PLANAR NPN TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT FEATURES • High Power Dissipation : Pc=1.5W Ta=25°C • Complementary to KTB1151. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage


    OCR Scan     		PDF KTD1691 KTB1151. KTD1691 KTB1151

    wv1 transistor

    Abstract: KTD2058 KTB1366
    Text: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTB1366 TRIPLE DIFFUSED PNP TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES • Low Collector Saturation Voltage : VcE sat =-1 .OV(Max.) at IC=-2A, IB=-0.2A. • Collector Power Dissipation : PC=25W (Tc=25°C)


    OCR Scan     		PDF KTB1366 KTD2058. 220IS wv1 transistor KTD2058 KTB1366