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    KRC28 Datasheets (30)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KRC281M Korea Electronics Built in Bias Resistor Original PDF
    KRC281M Korea Electronics Built in Bias Resistor Scan PDF
    KRC281S Korea Electronics Built in Bias Resistor Original PDF
    KRC281S Korea Electronics (KRC281S - KRC286S) EPITAXIAL PLANAR NPN TRANSISTOR Original PDF
    KRC281U Korea Electronics Audio Muting BRTs Switching Application. Audio Muting Application. Original PDF
    KRC282M Korea Electronics Built in Bias Resistor Original PDF
    KRC282M Korea Electronics Built in Bias Resistor Scan PDF
    KRC282S Korea Electronics (KRC281S - KRC286S) EPITAXIAL PLANAR NPN TRANSISTOR Original PDF
    KRC282S Korea Electronics Built in Bias Resistor Original PDF
    KRC282U Korea Electronics Audio Muting BRTs Switching Application. Audio Muting Application. Original PDF
    KRC283M Korea Electronics Built in Bias Resistor Original PDF
    KRC283M Korea Electronics Built in Bias Resistor Scan PDF
    KRC283S Korea Electronics Built in Bias Resistor Original PDF
    KRC283S Korea Electronics Built in Bias Resistor Original PDF
    KRC283U Korea Electronics Audio Muting BRTs Switching Application. Audio Muting Application. Original PDF
    KRC284M Korea Electronics Built in Bias Resistor Original PDF
    KRC284M Korea Electronics Built in Bias Resistor Scan PDF
    KRC284S Korea Electronics Built in Bias Resistor Original PDF
    KRC284S Korea Electronics Built in Bias Resistor Original PDF
    KRC284U Korea Electronics Audio Muting BRTs Switching Application. Audio Muting Application. Original PDF

    KRC28 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KRC282U

    Abstract: KRC28
    Text: SEMICONDUCTOR KRC282U MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking MR 1 No. 0 1 2. Marking 2 Item Marking Description Device Mark MR KRC282U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method


    Original     		PDF KRC282U KRC282U KRC28

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KRC281S~KRC286S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. FEATURES 2008. 10. 29 Revision No : 2 1/2


    Original     		PDF KRC281S KRC286S

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KRC281S~KRC286S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. E B L L 3 H G A 2 1 J DIM A B C D E G H J K L M N P MILLIMETERS _ 0.20 2.93 + 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20


    Original     		PDF KRC281S KRC286S OT-23 KRC282S KRC283S KRC284S KRC285S KRC286S

    marking MU

    Abstract: KRC285U
    Text: SEMICONDUCTOR KRC285U MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking MU 1 No. 0 1 2. Marking 2 Item Marking Description Device Mark MU KRC285U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method


    Original     		PDF KRC285U marking MU KRC285U

    KRC284U

    Abstract: marking Mt
    Text: SEMICONDUCTOR KRC284U MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 MT 1 2 Item Marking Description Device Mark MT KRC284U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method


    Original     		PDF KRC284U KRC284U marking Mt

    KRC286U

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KRC286U MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 MV 1 2 Item Marking Description Device Mark MV KRC286U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method


    Original     		PDF KRC286U KRC286U

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KRC281M~KRC286M TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. B FEATURES A High emitter-base voltage : VEBO=25V Min O F High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) Low on resistance : Ron=1 (Typ.) (IB=5mA)


    Original     		PDF KRC281M KRC286M KRC281M KRC282M KRC285M KRC283M KRC284M

    KRC281S

    Abstract: KRC282S KRC283S KRC284S KRC285S KRC286S MTB marking
    Text: SEMICONDUCTOR KRC281S~KRC286S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. E B L L 3 H G A 2 1 C J DIM A B C D E G H J K L M N P MILLIMETERS _ 0.20 2.93 + 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20


    Original     		PDF KRC281S KRC286S KRC281S KRC282S KRC285S KRC283S KRC284S KRC282S KRC283S KRC284S KRC285S KRC286S MTB marking

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KRC281U~KRC286U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. FEATURES ・High emitter-base voltage : VEBO=25V Min ・High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) ・Low on resistance : Ron=1Ω(Typ.) (IB=5mA)


    Original     		PDF KRC281U KRC286U KRC281U KRC282U KRC284U KRC285U KRC283U

    KRC281M

    Abstract: KRC282M KRC283M KRC284M KRC285M KRC286M
    Text: SEMICONDUCTOR KRC281M~KRC286M TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. B FEATURES A High emitter-base voltage : VEBO=25V Min O F High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) Low on resistance : Ron=1 (Typ.) (IB=5mA)


    Original     		PDF KRC281M KRC286M KRC281M KRC282M KRC285M KRC283M KRC284M KRC282M KRC283M KRC284M KRC285M KRC286M

    KRC281S

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KRC281S~KRC286S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. FEATURES ・High emitter-base voltage : VEBO=25V Min ・High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) ・Low on resistance : Ron=1Ω(Typ.) (IB=5mA)


    Original     		PDF KRC281S KRC286S KRC281S KRC282S KRC284S KRC285S KRC283S

    KRC286U

    Abstract: KRC281U KRC282U KRC283U KRC284U KRC285U
    Text: SEMICONDUCTOR KRC281U~KRC286U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. FEATURES E High emitter-base voltage : VEBO=25V Min B M High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) Low on resistance : Ron=1 (Typ.) (IB=5mA)


    Original     		PDF KRC281U KRC286U KRC281U KRC282U KRC285U KRC283U KRC284U KRC286U KRC282U KRC283U KRC284U KRC285U

    amoled

    Abstract: 12 mosfet sot23 SMFB14 KUSB50QN pg05fsesc PG24EBUSC KDZ33EV KIB3461QN KIB3462QN KMA2D3P20S
    Text: Block Function For Recommended Item Switching Diode / SBD KDS160F/V/E, KDS12□V/E, KDR7□0F/V/E MOSFET POWER KMA2D4P20S, KMA2D3P20S ZENER KDZ33EV BRT KRA3□□V/E MOSFET AUDIO MUTING MIC DISPLAY KMA2D4P20S, KMA2D3P20S BRT KRC28□U (KRC2□□S, KRC68□T)


    Original     		PDF KDS160F/V/E, KDS12V/E, KDR70F/V/E KMA2D4P20S, KMA2D3P20S KDZ33EV KRC28U KRC68T) amoled 12 mosfet sot23 SMFB14 KUSB50QN pg05fsesc PG24EBUSC KDZ33EV KIB3461QN KIB3462QN KMA2D3P20S

    KRC285U

    Abstract: KRC286U audio transistor KRC281U KRC282U KRC283U KRC284U
    Text: SEMICONDUCTOR KRC281U~KRC286U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. FEATURES ・High emitter-base voltage : VEBO=25V Min ・High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) ・Low on resistance : Ron=1Ω(Typ.) (IB=5mA)


    Original     		PDF KRC281U KRC286U KRC281U KRC282U KRC285U KRC283U KRC284U KRC285U KRC286U audio transistor KRC282U KRC283U KRC284U

    KRC283U

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KRC283U MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 MS 1 2 Item Marking Description Device Mark MS KRC283U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method


    Original     		PDF KRC283U KRC283U

    KRC281S

    Abstract: KRC282S KRC283S KRC284S KRC285S KRC286S
    Text: SEMICONDUCTOR KRC281S~KRC286S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. FEATURES E B L L High emitter-base voltage : VEBO=25V Min 2 A H With Built-in Bias Resistors. 3 G Low on resistance : Ron=1 (Typ.) (IB=5mA)


    Original     		PDF KRC281S KRC286S KRC281S KRC282S KRC285S KRC283S KRC284S KRC282S KRC283S KRC284S KRC285S KRC286S

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KRC281M~KRC286M TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. B A FEATURES ・High emitter-base voltage : VEBO=25V Min ・High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) ・Low on resistance : Ron=1Ω(Typ.) (IB=5mA)


    Original     		PDF KRC281M KRC286M KRC281M KRC282M KRC284M KRC285M KRC283M

    Untitled

    Abstract: No abstract text available
    Text: KRC28S Linear ICs dc-to-dc/Charge Pump Voltage Converter status Military/High-RelN Output Voltage Nominal V 28 Load Current Max. (A)714m Drop-Out Volt Max. P(D) Max. (W) Nom. Supp (V)18 Minimum Operating Temp (øC)-25 Maximum Operating Temp (øC)70 Package StyleModule


    Original     		PDF KRC28S Code6-67 NumberLN00600067 Description20W

    alternator diode 1776 B

    Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
    Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)


    Original     		PDF Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent

    khb*9D5N20P

    Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
    Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC


    Original     		PDF 2N2904E BC859 KDS135S 2N2906E BC860 KAC3301QN KDS160 2N3904 BCV71 KDB2151E khb*9D5N20P khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor

    KRC281M

    Abstract: KRC282M KRC283M KRC284M KRC285M KRC286M krc281m-krc286m
    Text: KRC281MKRC286M SEMICONDUCTOR EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. AUDIO MUTING APPLICATION. FEATURES • • • • • • High emitter-base voltage : VEB0=25V Min High reverse hFE : reverse hFE=150(Typ.) (Vce=_2V, Ic=-4mA)


    OCR Scan     		PDF KRC281M-KRC286M T0-92M 25Collector-Emitter 50j/A 50juA KRC281M KRC282M KRC283M KRC284M KRC285M KRC281M KRC282M KRC284M KRC285M KRC286M krc281m-krc286m

    jhdd

    Abstract: No abstract text available
    Text: SEM ICONDUCTOR KRC281S-KRC286S TECHNI CAL DATA EPI TAXI AL PLANAR NPN TRA NS IST OR SW ITC H IN G A PPLICATION. A U D IO M U TIN G A PPLICATION. FEA T U RE S L lì L DIM • High emitter-base voltage : V EBO=25V Min • High reverse hFE : reverse h FE=150(Typ.) (VCE=-2V, Ic=-4mA)


    OCR Scan     		PDF KRC281S-KRC286S KRC281S KRC282S KRC283S KRC284S KRC285S KRC286S 50//A jhdd

    Untitled

    Abstract: No abstract text available
    Text: DC-DC Converters & AC-DC Power Supplies OPTIONAL ENVIRONMENTAL SCREENING All Pico DC-DC Converters and AC-DC Power Supplies are available with high reliability Screening options to insure the maximum quality unit for your system. Select from the list below or call factory for review of your specific applications.


    OCR Scan     		PDF MIL-STD-883,

    Untitled

    Abstract: No abstract text available
    Text: T Y P IC A L C H A R A C T E R IS T IC S : T e st c o n d itio n s: 25°C am bient O p e ra tin g tem p erature: - 25°C to 70°C am bient O utput voltage tole ran ce : ± 3 % at typical input voltage O u tp u t vo ltage tem p e ratu re co e fficie n t: 0.02% °C


    OCR Scan     		PDF 040DIA