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    KMA2D3P20S Search Results

    KMA2D3P20S Datasheets (1)

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    KMA2D3P20S Korea Electronics P-Ch Trench MOSFET Original PDF

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    KMA2D3P20S

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KMA2D3P20S TECHNICAL DATA P-Ch Trench MOSFET General Description It s mainly suitable for use as a load switch in battery powered applications. E B FEATURES VDSS=-20V, ID=-2.3A. A H G 3 : RDS ON =130m (Max.) @ VGS=-4.5V. D 2 Drain-Source ON Resistance.


    Original     		PDF KMA2D3P20S Fig10. Fig11. KMA2D3P20S

    amoled

    Abstract: 12 mosfet sot23 SMFB14 KUSB50QN pg05fsesc PG24EBUSC KDZ33EV KIB3461QN KIB3462QN KMA2D3P20S
    Text: Block Function For Recommended Item Switching Diode / SBD KDS160F/V/E, KDS12□V/E, KDR7□0F/V/E MOSFET POWER KMA2D4P20S, KMA2D3P20S ZENER KDZ33EV BRT KRA3□□V/E MOSFET AUDIO MUTING MIC DISPLAY KMA2D4P20S, KMA2D3P20S BRT KRC28□U (KRC2□□S, KRC68□T)


    Original     		PDF KDS160F/V/E, KDS12V/E, KDR70F/V/E KMA2D4P20S, KMA2D3P20S KDZ33EV KRC28U KRC68T) amoled 12 mosfet sot23 SMFB14 KUSB50QN pg05fsesc PG24EBUSC KDZ33EV KIB3461QN KIB3462QN KMA2D3P20S

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KMA2D3P20S TECHNICAL DATA P-Ch Trench MOSFET General Description It’s mainly suitable for use as a load switch in battery powered applications. E B FEATURES Drain-Source ON Resistance. D VDSS=-20V, ID=-2.3A. 3 H G A 2 : RDS ON =130m (Max.) @ VGS=-4.5V.


    Original     		PDF KMA2D3P20S

    9n90c

    Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
    Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W


    Original     		PDF 2N7000 2N7000A 2N7000K 70Max 45Max 55Max 80Max 9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS