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    KMM466S823BT3 Search Results

    KMM466S823BT3 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KMM466S823BT3-F0 Samsung Electronics 144pin SDRAM SODIMM Scan PDF

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    Untitled

    Abstract: No abstract text available
    Text: 144pin SDRAM SODIMM KMM466S823BT3 KMM466S823BT3 SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM466S823BT3 is a 8M bit x 64 Synchronous • Performance range Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF 144pin KMM466S823BT3 KMM466S823BT3 8Mx64 400mil 144-pin M466S823BT3- 100MHz

    KMM466S823BT3-F0

    Abstract: No abstract text available
    Text: KMM466S823BT3 144pin SDRAM SODIMM i Revision History Revision .2 March 1998 • Some Parameter values & Chracteristics of comp, level are changed as below : - Input leakage Currents (Inputs) :± 5uA to ± 1uA. Input leakage Currents (I/O) :± 5uA to ± 1.5uA.


    OCR Scan     		PDF KMM466S823BT3 144pin KM48S8030BT KMM466S823BT3-F0

    Untitled

    Abstract: No abstract text available
    Text: Preliminary KMM466S823BT3_ 144pin SDRAM SODIMM KMM466S823BT3 SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD FEATURE GENERAL DESCRIPTION Perform ance range The Sam sung KM M 466S823BT3 is a 8M bit x 64 Synchronous


    OCR Scan     		PDF KMM466S823BT3_ 144pin KMM466S823BT3 8Mx64 466S823BT3 400mil 144-pin

    KMM466S823BT3

    Abstract: D057 KM48S8030BT KMM466S823BT2
    Text: KMM466S823BT3 144pin SDRAM SODIMM Revision History R evision .2 M arch 1998 Som e P a ra m eter value s & C h racteristics of com p, level are cha ng ed as b e lo w : - Input leakage Currents (Inputs) : ± 5uA to ± 1uA. Input leakage Currents (I/O) : ± 5uA to ± 1,5uA.


    OCR Scan     		PDF KMM466S823BT3 144pin KM48S8030BT KMM466S823BT3 D057 KM48S8030BT KMM466S823BT2

    Untitled

    Abstract: No abstract text available
    Text: KMM466S823BT3 144pin SDRAM SODIMM Revision History R evision .2 M arch 1998 Som e Param eter values & C hracteristics of comp, level are changed as below : - Input leakage Currents (Inputs) :± 5uA to ± 1 uA. Input leakage Currents (I/O) :± 5 u A t o t 1.5uA.


    OCR Scan     		PDF KMM466S823BT3 144pin

    Untitled

    Abstract: No abstract text available
    Text: KMM466S823BT3 144pin SDRAM SODIMM Revision History Revision .2 March 1998 Some Parameter values & Chracteristics of comp, level are changed as below : - Input leakage C urrents (Inputs) : ± 5uA to ± 1 uA. Input leakage C urrents (I/O) : ± 5uA to ± 1.5uA.


    OCR Scan     		PDF KMM466S823BT3 144pin 48S8030BT