KM48S8030BT-F10
Abstract: KMM466S823BT2-F0 KMM466S823BT2
Text: KMM466S823BT2 144pin SDRAM SODIMM Revision History Revision .2 March 1998 Some Parameter values & Chracteristics of comp. level are changed as below : - Input leakage Currents (Inputs) : ± 5uA to ± 1uA. Input leakage Currents (I/O) : ± 5uA to ± 1.5uA.
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KMM466S823BT2
144pin
66MHz
KM48S8030BT-F10
KMM466S823BT2-F0
KMM466S823BT2
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Untitled
Abstract: No abstract text available
Text: KMM466S823BT2 144pin SDRAM SODIMM Revision History R evision .2 M arch 1998 Som e Param eter values & C hracteristics of comp, level are changed as below : - Input leakage Currents (Inputs) : ± 5uA to ± 1 uA. Input leakage Currents (I/O) : ± 5uA to ± 1,5uA.
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KMM466S823BT2
144pin
KM48S8030BT
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Untitled
Abstract: No abstract text available
Text: Preliminary KMM466S823BT2_144pin SDRAM SODIMM KMM466S823BT2 SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD FEATURE GENERAL DESCRIPTION Perform ance range The Sam sung KM M 466S823BT2 is a 8M bit x 64 Synchronous
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KMM466S823BT2_
144pin
KMM466S823BT2
8Mx64
466S823BT2
100MHz
400mil
144-pin
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Untitled
Abstract: No abstract text available
Text: KMM466S823BT2 144pin SDRAM SODIMM R evision H istory Revision .2 March 1998 Som e Param eter values & C hracteristics of comp, level are changed as below : - I nput leakage Currents (I nputs) : ± 5uA to ± 1uA. Input leakage Currents (I/O) : ± 5uA to ± 1,5uA.
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KMM466S823BT2
144pin
KM48S8030BT
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Untitled
Abstract: No abstract text available
Text: 144pin SDRAM SODIMM KMM466S823BT2 KMM466S823BT2 SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM466S823BT2 is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung
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KMM466S823BT2
KMM466S823BT2
144pin
8Mx64
400mil
144-pin
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Untitled
Abstract: No abstract text available
Text: KM M 4 6 6 S 8 2 3 B T 2 144pm S D R A M S O D IM M Revision History R evision .2 M arch 1998 • Some Parameter values & Chracteristics of comp, level are changed as below : -In p u t leakage Currents (Inputs) : ± 5uA to ± 1uA. Input leakage Currents (I/O) : ± 5uA to ± 1.5uA.
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144pm
44pin
KM48S8030BT
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KMM366S424BTL-G0
Abstract: KMM466S824BT2F0 KMM466S424BT-F0 KMM466S824BT2-F0 4MX16 16MX8 KM44S4020CT KM48S2020CT
Text: TABLE OF CONTENTS | I. General Information A. Product Guide Component B. Product Guide (Module) C. Ordering information II. Component Specifications A. 16M SDRAM (C-die) - Datasheets • KM44S4020CT • 4Mx4 with 2Banks 25 • KM48S2020CT .
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KM44S4020CT
KM48S2020CT
KM416S1020CT
KM416S1021CT
1Mx16
KM44S16020BT
KM48S8020BT
KM416S4020BT
------------------------------------16Mx4
4Mx64
KMM366S424BTL-G0
KMM466S824BT2F0
KMM466S424BT-F0
KMM466S824BT2-F0
4MX16
16MX8
KM44S4020CT
KM48S2020CT
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Untitled
Abstract: No abstract text available
Text: KMM466S823BT3 144pin SDRAM SODIMM Revision History Revision .2 March 1998 Some Parameter values & Chracteristics of comp, level are changed as below : - Input leakage C urrents (Inputs) : ± 5uA to ± 1 uA. Input leakage C urrents (I/O) : ± 5uA to ± 1.5uA.
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KMM466S823BT3
144pin
48S8030BT
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