Untitled
Abstract: No abstract text available
Text: Preliminary 466S823BT3_ 144pin SDRAM SODIMM 466S823BT3 SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD FEATURE GENERAL DESCRIPTION Perform ance range The Sam sung KM M 466S823BT3 is a 8M bit x 64 Synchronous
|
OCR Scan
|
KMM466S823BT3_
144pin
KMM466S823BT3
8Mx64
466S823BT3
400mil
144-pin
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 144pin SDRAM SODIMM 466S823BT3 466S823BT3 SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung 466S823BT3 is a 8M bit x 64 Synchronous • Performance range Dynamic RAM high density memory module. The Samsung
|
OCR Scan
|
144pin
KMM466S823BT3
KMM466S823BT3
8Mx64
400mil
144-pin
M466S823BT3-
100MHz
|
PDF
|
KMM466S823BT3
Abstract: D057 KM48S8030BT KMM466S823BT2
Text: 466S823BT3 144pin SDRAM SODIMM Revision History R evision .2 M arch 1998 Som e P a ra m eter value s & C h racteristics of com p, level are cha ng ed as b e lo w : - Input leakage Currents (Inputs) : ± 5uA to ± 1uA. Input leakage Currents (I/O) : ± 5uA to ± 1,5uA.
|
OCR Scan
|
KMM466S823BT3
144pin
KM48S8030BT
KMM466S823BT3
D057
KM48S8030BT
KMM466S823BT2
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 466S823BT3 144pin SDRAM SODIMM Revision History Revision .2 March 1998 Some Parameter values & Chracteristics of comp, level are changed as below : - Input leakage C urrents (Inputs) : ± 5uA to ± 1 uA. Input leakage C urrents (I/O) : ± 5uA to ± 1.5uA.
|
OCR Scan
|
KMM466S823BT3
144pin
48S8030BT
|
PDF
|