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Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: Preliminary 466S823BT3_ 144pin SDRAM SODIMM 466S823BT3 SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD FEATURE GENERAL DESCRIPTION Perform ance range The Sam sung KM M 466S823BT3 is a 8M bit x 64 Synchronous	OCR Scan	KMM466S823BT3_ 144pin KMM466S823BT3 8Mx64 466S823BT3 400mil 144-pin	PDF
Untitled Abstract: No abstract text available Text: 144pin SDRAM SODIMM 466S823BT3 466S823BT3 SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung 466S823BT3 is a 8M bit x 64 Synchronous • Performance range Dynamic RAM high density memory module. The Samsung	OCR Scan	144pin KMM466S823BT3 KMM466S823BT3 8Mx64 400mil 144-pin M466S823BT3- 100MHz	PDF
KMM466S823BT3 Abstract: D057 KM48S8030BT KMM466S823BT2 Text: 466S823BT3 144pin SDRAM SODIMM Revision History R evision .2 M arch 1998 Som e P a ra m eter value s & C h racteristics of com p, level are cha ng ed as b e lo w : - Input leakage Currents (Inputs) : ± 5uA to ± 1uA. Input leakage Currents (I/O) : ± 5uA to ± 1,5uA.	OCR Scan	KMM466S823BT3 144pin KM48S8030BT KMM466S823BT3 D057 KM48S8030BT KMM466S823BT2	PDF
Untitled Abstract: No abstract text available Text: 466S823BT3 144pin SDRAM SODIMM Revision History Revision .2 March 1998 Some Parameter values & Chracteristics of comp, level are changed as below : - Input leakage C urrents (Inputs) : ± 5uA to ± 1 uA. Input leakage C urrents (I/O) : ± 5uA to ± 1.5uA.	OCR Scan	KMM466S823BT3 144pin 48S8030BT	PDF